WO2005036266A1 - Masken, lithographievorrichtung und halbleiterbauelement - Google Patents
Masken, lithographievorrichtung und halbleiterbauelement Download PDFInfo
- Publication number
- WO2005036266A1 WO2005036266A1 PCT/EP2003/010338 EP0310338W WO2005036266A1 WO 2005036266 A1 WO2005036266 A1 WO 2005036266A1 EP 0310338 W EP0310338 W EP 0310338W WO 2005036266 A1 WO2005036266 A1 WO 2005036266A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- mask
- period thickness
- pupil
- lithography device
- reflectivity
- Prior art date
Links
- 238000001459 lithography Methods 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 210000001747 pupil Anatomy 0.000 claims abstract description 35
- 238000002310 reflectometry Methods 0.000 claims abstract description 33
- 238000000576 coating method Methods 0.000 claims abstract description 31
- 239000011248 coating agent Substances 0.000 claims abstract description 26
- 238000009826 distribution Methods 0.000 claims abstract description 10
- 238000005286 illumination Methods 0.000 claims description 34
- 230000003287 optical effect Effects 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 6
- 238000003384 imaging method Methods 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 description 10
- 241000264877 Hippospongia communis Species 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000001427 coherent effect Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
Definitions
- the invention relates to masks with a multilayer coating with a period thickness distribution d (x, y, z).
- the invention further relates to a lithography device and a semiconductor component.
- Semiconductor components are usually manufactured using lithography processes. For this purpose, structures that are specified by a mask are imaged on a substrate with the aid of lighting and projection systems. As a rule, light with wavelengths in the UV range is used. As the miniaturization of the semiconductor components progresses, wavelengths in the extreme ultraviolet wavelength range (EUV) and in the soft X-ray wavelength range are used. This spectrum corresponds to wavelengths in the range from 1 to 20 nm.
- EUV extreme ultraviolet wavelength range
- soft X-ray wavelength range This spectrum corresponds to wavelengths in the range from 1 to 20 nm.
- the masks are used that work in reflection.
- the masks have a multilayer coating.
- Such multilayers are made up of periodic repetitions, with a period in the simplest case consisting of two layers.
- one layer material should have the highest possible refractive index and low absorption, while the other layer material should have the lowest possible refractive index.
- the layer with the high refractive index and low absorption is also called spacer, the layer with a low refractive index is also called an absorber.
- silicon with a refractive index of 1.0 is used as a spacer and molybdenum with a refractive index of 0.92 as an absorber.
- the period thickness and the thickness of the individual layers are selected depending on the operating wavelength, the mean angle of incidence and the angular bandwidth of the incident radiation in such a way that the reflectivity integrated over the irradiated surface is maximized at the operating wavelength.
- Multilayer coatings act like a Bragg reflector, so that a reflectivity that is dependent on the angle of incidence is observed. This is e.g. noticeable in the form of a non-homogeneous intensity distribution in the pupil of projection optics, the so-called pupil apodization. Because it is technically not possible to provide lighting sources and lighting systems that only provide exactly one angle of incidence. Such so-called coherent illuminations also only allow the mapping of coarse structures, during which one can resolve and map finer structures with partially coherent or incoherent illuminating systems. Such lighting systems have a finally opened cone of illumination beams. Pupil apodization can lead to imaging errors such as e.g. B. inhomogeneous intensity when projecting the mask structure onto a substrate, telecentricity errors and structure-dependent or field-dependent resolution limits (so-called HV differences or CD variations).
- imaging errors such as e.g. B. inhomogeneous intensity when projecting the mask structure onto a substrate, telecentricity errors and structure-dependent or field-dependent
- EP 1 282 011 A2 shows ways of minimizing apodization by means of measures on the projection system.
- the projection lens proposed there for imaging a pattern arranged in an object plane into an image plane with the aid of electromagnetic radiation from the EUV range has a plurality of multilayer coatings provided between the object plane and the image plane.
- At least one of the mirrors has a graded multilayer coating with a layer thickness curve that is rotationally symmetrical to a coating axis, the coating axis being arranged eccentrically to the optical axis of the projection objective.
- the problem of pupil apodization ie the strong fluctuation in intensity across the pupil, is alleviated by working with rotationally symmetrical apodization. This means that the apodization is almost independent of the field.
- the projection objective has two mirrors with a centered and graded multilayer coating, the two multilayer coatings being matched to one another accordingly.
- US 6,333,961 B1 is concerned with reducing the influence of the bandwidth of the source spectrum on the lithographic image.
- the reflective mask is used in the soft X-ray wavelength range, with the reflection taking place on a multilayer coating. It is proposed to vary the period thickness of the multilayer coating over the depth of the coating. This variation in thickness makes the reflectivity profile wider depending on the angle of incidence or the wavelength. As a result, the lithographic image becomes less sensitive to fluctuations in the angle of incidence and the wavelength.
- the thickness variation can run continuously or in steps across the coating depth.
- the object of the present invention is to propose measures which make it possible to reduce the imaging errors due to apodization effects.
- the period thickness d (x, y, z) is over the entire reticle area, d. H. in the x-y plane, larger than di eai- This has proven particularly useful for large-area masks.
- the period thickness d (x, y, z) is very particularly preferably constant over the entire mask area and in particular for the entire coating. This leads to a great simplification not only of the multilayer layer design, but also of the manufacture of the mask. It has been found that even with a slight increase in the period thickness by a constant amount over the entire mask area, symmetrical apodization with little intensity fluctuation can be achieved with only a slight loss in overall reflectivity.
- the period thickness is chosen so that the reflectivities for the aperture edge rays of a given illumination aperture are the same.
- the improvements obtained through the use of the masks according to the invention in lithography devices can be further increased if the illumination system is designed in such a way that the exit pupil of the illumination system is illuminated specifically inhomogeneously. This combination of measures on the illumination system and on the mask effectively minimizes pupil apodization.
- the inhomogeneous illumination is advantageously adapted to the angle of incidence per field as a function of the field point.
- the corrective measures can be carried out by means of optical elements which are arranged in the beam path in front of the mask.
- the real masks can have reflectivities that deviate from the ideal reflectivity or, due to diffractive structures, can have additional effects that influence the pupil illumination. That can e.g. B. Illumination-dependent diffraction efficiencies of object structures of the structure-bearing mask. These can be compensated for with adapted filters. For example, a sub-pupil can be influenced depending on the field position using a honeycomb channel filter. Depending on the mask used, the filter can be changed. For this, z. B. use a filter wheel. Suitable filters are e.g. described in DE 103 34 722.4.
- a further symmetrization of the pupil apodization can be achieved if, as described in EP 1 282 011 A2, at least one optical element with a centered, graded multilayer coating is provided in the projection system.
- the graded multilayer coating is preferably optimized to compensate, in particular, for the residual apodization of the pupil caused by reflection on the mask.
- two or more optical elements with an essentially centered, graded multilayer coating can be used, the multilayer coating of the individual optical elements being matched to one another accordingly.
- semiconductor components can be produced by structuring a substrate.
- 1a shows a schematic diagram of an EUV lithography device
- FIG. 1b shows a more detailed sketch of an EUV lithography device
- FIG. 1 shows an EUV lithography device 1 for producing semiconductor components by structuring a substrate 7.
- a beam 3 coming from the radiation source 2 is fed to an illumination system 4, which directs the beam 3 onto a mask 5 in such a way that it is illuminated.
- the EUV beam 3 is diffracted in reflection and fed to the projection system 6, which directs the EUV beam 3 onto the substrate 7, the structure located on the mask surface being projected onto the substrate 7.
- the generally known method of backward beam tracing determines the intensity distribution over the illumination angle at which there is a reflection a homogeneously illuminated pupil on the mask 5 and passage through the projection optics on the wafer substrate 7, ie there is no deviation from the desired telecentricity.
- the angle-dependent reflectivity it is also conceivable to also take into account the angle-dependent diffraction efficiencies of structures to be imaged on the reflection mask 5.
- the compensation can be adapted to a given or predominant structure width and orientation by means of an exchangeable filter element.
- the EUV projection exposure system according to FIG. 1b comprises an illumination system 2O6 with a diffractive spectral filter 200, which is implemented, for example, by a grating. Together with the aperture 302 in the vicinity of the intermediate image Z of the light source 301, undesired radiation with, for example, wavelengths substantially greater than the desired wavelength, in the present case 13.5 nm, can thus be prevented from entering the part of the lighting system located behind the aperture 302 ,
- the aperture 302 also serves to separate the room 304 with the light source 1, collector 303 and grating 200 from the subsequent elements of the to separate the lighting system 206 spatially.
- a pressure separation is also possible.
- the spatial or pressure-related separation can prevent contaminations originating from the light source 301 from reaching the part of the lighting system which is located behind the diaphragm 302.
- the collector 303 used here is nested with eight shells.
- a first, second, third, fourth and fifth optical element 102, 104, 106, 108, 110 are arranged behind the diaphragm 302.
- the first optical element 1 O2 comprises 122 first raster elements each with an extension of 54 mm x 2.75 mm.
- the second optical element 104 has at least 122 second raster elements assigned to the first raster elements, each with a diameter of 10 mm.
- Each of the first raster elements that are imaged in the object plane 114 and whose images are overlaid there are assigned second raster elements.
- the intensity striking a first raster element thus corresponds to the intensity of the assigned second raster element, which in turn corresponds to an illumination angle in the object plane 114.
- the correction filter 1000 is arranged directly in front of the first raster elements 102. It is located, for example, in a filter wheel that can be rotated about an axis of rotation 1010 for exchange with another correction filter 1002, adapted to other structure widths to be imaged or orientations on the mask. Training as a uniform filter element with an active component is also conceivable.
- the filter 1000 can also be arranged after the second optical element 104 or between the first and the second optical element 102, 104.
- the filter 1000 is designed for field position-dependent correction of the apodizing effect in such a way that the radiation flux is weakened in front of certain first raster elements, which correspond to certain illumination angles at respective field locations through the assignment to certain second raster elements, so that after reflection, all radiation angles are reflected sets a homogeneous scan-integrated field and pupil illumination in the image space of the projection exposure system on the mask.
- the second raster elements of the second optical element 104 are imaged via the mirrors 106, 108 and 110 into the entrance pupil of the subsequent projection objective 126 with six mirrors 128.1, 128.2, 128.3, 128.4, 128.5, 128.6.
- the projection objective 126 images the ring field in the object plane 114 into an image field in an image plane 124 in which the object to be exposed, such as, for example, B. is a wafer.
- the structure-bearing mask is arranged in the object plane 114.
- mirror 128.2 has a graded, decentered multilayer coating which is symmetrical about the coating axis.
- the mirrors 128.4 and 128.5 have an essentially centered, graded multilayer coating, the two coatings being matched to one another.
- the mirror 110 of the lighting system 206 serves to shape the ring field in the object plane 114 and consists of an off-axis segment of a rotational hyperboloid.
- the angles of incidence on the mask usually depend on the respective field position, in particular if, as in the case of reflective EUV projection exposure systems, there is no telecentric beam path on the mask. If there is apodization of the pupil and / or an inhomogeneous illumination of the image plane 124 due to the angle-dependent reflectivity of the mask, it is possible to compensate for this apodization or non-uniform illumination of the image plane by, for example, partial shading of the honeycomb channels of a honeycomb condenser. For this purpose, the intensity of the directions of illumination, which are reflected with a higher reflectivity on the mask, is weakened at the corresponding field and pupil locations.
- honeycomb condenser not shown, is attached to the second raster elements of the second optical element 104. This enables a constant change in the intensity distribution across all field positions. If field position-dependent apodization effects are also to be compensated for, this is done by means of the filter 1000 already described, which is arranged in front of the first optical element 102.
- 3 shows the reflectivities for different angles of incidence from 2 ° to 10 ° as a function of the wavelength.
- the conventional mask used here is optimized for an operating wavelength of 13.5 nm and a main beam angle of 6 °.
- the resulting pupil apodization for five different field points is shown in relative pupil coordinates in FIGS. 4a-e.
- the exact values are summarized in Table 1.
- the apodization course in the exit pupil can be seen, which is clearly asymmetrical.
- the reflectivity is subject to a wide variation and takes values between 66.42% to 68.20% and 72.78%.
- FIGS. 5 and 6 ae the corresponding representations for a mask according to the invention are shown in FIGS. 5 and 6 ae.
- the mask according to the invention also has a molybdenum-silicon multilayer coating.
- the period thickness was chosen as constant 6.976 nm. For the reflectivity depending on the angle of incidence, this means that at the operating wavelength of 13.5 nm the reflectivity is now maximal at an angle of incidence of approximately 8 ° instead of at 6 °.
Abstract
Description
Claims
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020067004914A KR100983190B1 (ko) | 2003-09-17 | 2003-09-17 | 마스크, 리소그래피 장치와 반도체 구성요소 |
JP2005509416A JP4402656B2 (ja) | 2003-09-17 | 2003-09-17 | マスク及びリソグラフィ装置 |
AU2003293308A AU2003293308A1 (en) | 2003-09-17 | 2003-09-17 | Masks, lithography device and semiconductor component |
KR1020097024038A KR101050320B1 (ko) | 2003-09-17 | 2003-09-17 | 마스크, 리소그래피 장치와 반도체 구성요소 |
PCT/EP2003/010338 WO2005036266A1 (de) | 2003-09-17 | 2003-09-17 | Masken, lithographievorrichtung und halbleiterbauelement |
US10/572,149 US7572556B2 (en) | 2003-09-17 | 2003-09-17 | Masks, lithography device and semiconductor component |
US12/498,226 US7914955B2 (en) | 2003-09-17 | 2009-07-06 | Masks, lithography device and semiconductor component |
US13/073,629 US8268518B2 (en) | 2003-09-17 | 2011-03-28 | Method and lithography device with a mask reflecting light |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2003/010338 WO2005036266A1 (de) | 2003-09-17 | 2003-09-17 | Masken, lithographievorrichtung und halbleiterbauelement |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/572,149 A-371-Of-International US7572556B2 (en) | 2003-09-17 | 2003-09-17 | Masks, lithography device and semiconductor component |
US12/498,226 Continuation US7914955B2 (en) | 2003-09-17 | 2009-07-06 | Masks, lithography device and semiconductor component |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005036266A1 true WO2005036266A1 (de) | 2005-04-21 |
Family
ID=34429221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2003/010338 WO2005036266A1 (de) | 2003-09-17 | 2003-09-17 | Masken, lithographievorrichtung und halbleiterbauelement |
Country Status (5)
Country | Link |
---|---|
US (3) | US7572556B2 (de) |
JP (1) | JP4402656B2 (de) |
KR (2) | KR101050320B1 (de) |
AU (1) | AU2003293308A1 (de) |
WO (1) | WO2005036266A1 (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005042496A1 (de) * | 2005-09-05 | 2007-03-08 | Carl Zeiss Sms Gmbh | Verfahren zur Korrektur der Apodisierung in mikroskopischen Abbildungssystemen |
WO2008133254A1 (en) * | 2007-04-23 | 2008-11-06 | Nikon Corporation | Multilayer-film reflective mirror, exposure apparatus, device manufacturing method, and manufacturing method of multilayer-film reflective mirror |
JP2013532381A (ja) * | 2010-06-15 | 2013-08-15 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Euvリソグラフィ用のマスク、euvリソグラフィシステム、及びマスクの結像を最適化する方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4532991B2 (ja) * | 2004-05-26 | 2010-08-25 | キヤノン株式会社 | 投影光学系、露光装置及びデバイス製造方法 |
US7681172B2 (en) * | 2007-01-29 | 2010-03-16 | Synopsys, Inc. | Method and apparatus for modeling an apodization effect in an optical lithography system |
CN101836163B (zh) * | 2007-08-20 | 2012-06-27 | 卡尔蔡司Smt有限责任公司 | 包括具有反射涂层的镜元件的投射物镜 |
DE102009054986B4 (de) * | 2009-12-18 | 2015-11-12 | Carl Zeiss Smt Gmbh | Reflektive Maske für die EUV-Lithographie |
DE102010041746A1 (de) * | 2010-09-30 | 2012-04-05 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung |
JP6044213B2 (ja) * | 2012-09-13 | 2016-12-14 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付基板およびその製造方法 |
US10365152B1 (en) * | 2013-03-14 | 2019-07-30 | Wavefront Research, Inc. | Compact annular field imager and method for imaging electromagnetic radiation |
US9575412B2 (en) | 2014-03-31 | 2017-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for reducing pole imbalance by adjusting exposure intensity |
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US7961297B2 (en) | 2005-09-05 | 2011-06-14 | Carl Zeiss Sms Gmbh | Method for determining intensity distribution in the image plane of a projection exposure arrangement |
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Also Published As
Publication number | Publication date |
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KR100983190B1 (ko) | 2010-09-20 |
US7572556B2 (en) | 2009-08-11 |
US20090268189A1 (en) | 2009-10-29 |
KR101050320B1 (ko) | 2011-07-19 |
AU2003293308A1 (en) | 2005-04-27 |
KR20060123721A (ko) | 2006-12-04 |
KR20090133137A (ko) | 2009-12-31 |
JP2007515770A (ja) | 2007-06-14 |
US20110229827A1 (en) | 2011-09-22 |
US7914955B2 (en) | 2011-03-29 |
US8268518B2 (en) | 2012-09-18 |
JP4402656B2 (ja) | 2010-01-20 |
US20070082272A1 (en) | 2007-04-12 |
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