KR101099384B1 - 파워 스위치 구조 및 방법 - Google Patents

파워 스위치 구조 및 방법 Download PDF

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Publication number
KR101099384B1
KR101099384B1 KR1020067006616A KR20067006616A KR101099384B1 KR 101099384 B1 KR101099384 B1 KR 101099384B1 KR 1020067006616 A KR1020067006616 A KR 1020067006616A KR 20067006616 A KR20067006616 A KR 20067006616A KR 101099384 B1 KR101099384 B1 KR 101099384B1
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KR
South Korea
Prior art keywords
gate
current
electrodes
control electrode
pair
Prior art date
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Expired - Lifetime
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KR1020067006616A
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English (en)
Korean (ko)
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KR20060120654A (ko
Inventor
스테픈 피. 롭
데이비드 케이. 브릭스
Original Assignee
세미컨덕터 콤포넨츠 인더스트리즈 엘엘씨
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Publication of KR20060120654A publication Critical patent/KR20060120654A/ko
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/001—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection limiting speed of change of electric quantities, e.g. soft switching on or off
    • H02H9/004—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection limiting speed of change of electric quantities, e.g. soft switching on or off in connection with live-insertion of plug-in units
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H03K17/167—Soft switching using parallel switching arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
KR1020067006616A 2003-10-06 2004-09-15 파워 스위치 구조 및 방법 Expired - Lifetime KR101099384B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/678,769 2003-10-06
US10/678,769 US6949961B2 (en) 2003-10-06 2003-10-06 Power switch structure with low RDSon and low current limit
PCT/US2004/030143 WO2005041380A1 (en) 2003-10-06 2004-09-15 Power switch structure and method

Publications (2)

Publication Number Publication Date
KR20060120654A KR20060120654A (ko) 2006-11-27
KR101099384B1 true KR101099384B1 (ko) 2011-12-29

Family

ID=34394009

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067006616A Expired - Lifetime KR101099384B1 (ko) 2003-10-06 2004-09-15 파워 스위치 구조 및 방법

Country Status (7)

Country Link
US (2) US6949961B2 (https=)
EP (1) EP1671408B1 (https=)
JP (2) JP5179755B2 (https=)
KR (1) KR101099384B1 (https=)
CN (1) CN100557916C (https=)
TW (1) TWI368989B (https=)
WO (1) WO2005041380A1 (https=)

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US8253196B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212317B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253195B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212315B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212316B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
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US7186606B2 (en) 2004-08-23 2007-03-06 Enpirion, Inc. Method of forming an integrated circuit employable with a power converter
US7214985B2 (en) * 2004-08-23 2007-05-08 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7335948B2 (en) * 2004-08-23 2008-02-26 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7232733B2 (en) * 2004-08-23 2007-06-19 Enpirion, Inc. Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
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CN103166168B (zh) * 2011-12-19 2016-11-02 上海航空电器有限公司 一种高压直流固态功率控制器
US8766365B2 (en) * 2012-02-21 2014-07-01 Micron Technology, Inc. Circuit-protection devices
JP5845108B2 (ja) 2012-02-23 2016-01-20 ルネサスエレクトロニクス株式会社 パワーデバイス
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US20140159130A1 (en) 2012-11-30 2014-06-12 Enpirion, Inc. Apparatus including a semiconductor device coupled to a decoupling device
US9673192B1 (en) 2013-11-27 2017-06-06 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
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US10020739B2 (en) 2014-03-27 2018-07-10 Altera Corporation Integrated current replicator and method of operating the same
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JP6504429B2 (ja) * 2014-12-08 2019-04-24 富士電機株式会社 スイッチング電源装置
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Also Published As

Publication number Publication date
JP5296119B2 (ja) 2013-09-25
EP1671408A1 (en) 2006-06-21
EP1671408B1 (en) 2018-02-28
WO2005041380A1 (en) 2005-05-06
JP5179755B2 (ja) 2013-04-10
US20050179084A1 (en) 2005-08-18
US20050072987A1 (en) 2005-04-07
TWI368989B (en) 2012-07-21
TW200520215A (en) 2005-06-16
KR20060120654A (ko) 2006-11-27
JP2011135093A (ja) 2011-07-07
HK1095434A1 (zh) 2007-05-04
US6949961B2 (en) 2005-09-27
CN1864311A (zh) 2006-11-15
US7230299B2 (en) 2007-06-12
CN100557916C (zh) 2009-11-04
JP2007507893A (ja) 2007-03-29

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