TWI368989B - Power switch structure with low rdson and low current limit and method - Google Patents

Power switch structure with low rdson and low current limit and method

Info

Publication number
TWI368989B
TWI368989B TW093130164A TW93130164A TWI368989B TW I368989 B TWI368989 B TW I368989B TW 093130164 A TW093130164 A TW 093130164A TW 93130164 A TW93130164 A TW 93130164A TW I368989 B TWI368989 B TW I368989B
Authority
TW
Taiwan
Prior art keywords
low
power switch
current limit
switch structure
rdson
Prior art date
Application number
TW093130164A
Other languages
English (en)
Other versions
TW200520215A (en
Inventor
Stephen P Robb
David K Briggs
Original Assignee
Semiconductor Components Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Components Ind filed Critical Semiconductor Components Ind
Publication of TW200520215A publication Critical patent/TW200520215A/zh
Application granted granted Critical
Publication of TWI368989B publication Critical patent/TWI368989B/zh

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/001—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection limiting speed of change of electric quantities, e.g. soft switching on or off
    • H02H9/004—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection limiting speed of change of electric quantities, e.g. soft switching on or off in connection with live-insertion of plug-in units
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H03K17/167—Soft switching using parallel switching arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
TW093130164A 2003-10-06 2004-10-05 Power switch structure with low rdson and low current limit and method TWI368989B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/678,769 US6949961B2 (en) 2003-10-06 2003-10-06 Power switch structure with low RDSon and low current limit

Publications (2)

Publication Number Publication Date
TW200520215A TW200520215A (en) 2005-06-16
TWI368989B true TWI368989B (en) 2012-07-21

Family

ID=34394009

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093130164A TWI368989B (en) 2003-10-06 2004-10-05 Power switch structure with low rdson and low current limit and method

Country Status (8)

Country Link
US (2) US6949961B2 (zh)
EP (1) EP1671408B1 (zh)
JP (2) JP5179755B2 (zh)
KR (1) KR101099384B1 (zh)
CN (1) CN100557916C (zh)
HK (1) HK1095434A1 (zh)
TW (1) TWI368989B (zh)
WO (1) WO2005041380A1 (zh)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8212316B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253197B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253196B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US7230302B2 (en) 2004-01-29 2007-06-12 Enpirion, Inc. Laterally diffused metal oxide semiconductor device and method of forming the same
US8212317B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212315B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253195B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US7414335B2 (en) * 2004-04-15 2008-08-19 Seagate Technology Inrush current controller
US7195981B2 (en) 2004-08-23 2007-03-27 Enpirion, Inc. Method of forming an integrated circuit employable with a power converter
US7190026B2 (en) * 2004-08-23 2007-03-13 Enpirion, Inc. Integrated circuit employable with a power converter
US7232733B2 (en) * 2004-08-23 2007-06-19 Enpirion, Inc. Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
US7015544B2 (en) * 2004-08-23 2006-03-21 Enpirion, Inc. Intergrated circuit employable with a power converter
US7186606B2 (en) 2004-08-23 2007-03-06 Enpirion, Inc. Method of forming an integrated circuit employable with a power converter
US7335948B2 (en) * 2004-08-23 2008-02-26 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7229886B2 (en) * 2004-08-23 2007-06-12 Enpirion, Inc. Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
US7214985B2 (en) * 2004-08-23 2007-05-08 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
JP4203464B2 (ja) * 2004-11-18 2009-01-07 パナソニック株式会社 Ｄｃ−ｄｃコンバータ
US7609499B2 (en) * 2005-05-05 2009-10-27 Seagate Technology Llc Active current limiting circuit
US7332358B2 (en) * 2005-06-30 2008-02-19 Potentia Semiconductor Inc. MOSFET temperature sensing
US20070126872A1 (en) * 2005-12-06 2007-06-07 Michael Bolotine Modular surveillance camera system
US20070126871A1 (en) * 2005-12-06 2007-06-07 Henninger Paul E Iii Modular surveillance camera system with self-identification capability
GB2467450B (en) * 2007-12-11 2011-07-20 Wolfson Microelectronics Plc Drive circuit
GB2455524B (en) 2007-12-11 2010-04-07 Wolfson Microelectronics Plc Charge pump circuit and methods of operation thereof and portable audio apparatus including charge pump circuits
US7760479B2 (en) * 2008-04-09 2010-07-20 Fairchild Semiconductor Corporation Technique for combining in-rush current limiting and short circuit current limiting
US7683693B2 (en) * 2008-04-10 2010-03-23 Fairchild Semiconductor Corporation Hot swap controller with zero loaded charge pump
US8174148B2 (en) * 2008-08-07 2012-05-08 Crucs Holdings, Llc Controllable electrical outlet and a method of operation thereof
US8050001B2 (en) * 2008-08-07 2011-11-01 Crucs Holdings, Llc Timed electrical outlet and a method of operation thereof
US8138933B2 (en) * 2008-11-05 2012-03-20 Crucs Holdings, Llc Systems, methods, and apparatus for automatically disabling appliances in response to a smoke detector
GB2488077A (en) 2009-10-30 2012-08-15 Novozymes Biopharma Dk As Albumin variants
CN102570809B (zh) * 2010-12-31 2016-02-24 意法半导体研发(深圳)有限公司 短路保护电路及方法
TWI492277B (zh) * 2011-04-11 2015-07-11 Great Power Semiconductor Corp 具有快速切換能力之溝渠式功率金氧半導體結構之製造方法
CN103166168B (zh) * 2011-12-19 2016-11-02 上海航空电器有限公司 一种高压直流固态功率控制器
US8766365B2 (en) * 2012-02-21 2014-07-01 Micron Technology, Inc. Circuit-protection devices
JP5845108B2 (ja) 2012-02-23 2016-01-20 ルネサスエレクトロニクス株式会社 パワーデバイス
MX2014010278A (es) 2012-03-16 2015-03-05 Novozymes Biopharma Dk As Variantes de albumina.
US9443839B2 (en) 2012-11-30 2016-09-13 Enpirion, Inc. Semiconductor device including gate drivers around a periphery thereof
US9536938B1 (en) 2013-11-27 2017-01-03 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US9673192B1 (en) 2013-11-27 2017-06-06 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US10020739B2 (en) 2014-03-27 2018-07-10 Altera Corporation Integrated current replicator and method of operating the same
US10468917B2 (en) * 2014-03-05 2019-11-05 Ricoh Co., Ltd. Battery charger
WO2015154817A1 (en) * 2014-04-11 2015-10-15 Telefonaktiebolaget L M Ericsson (Publ) A current control circuit and a method therefor
JP6504429B2 (ja) * 2014-12-08 2019-04-24 富士電機株式会社 スイッチング電源装置
US10103627B2 (en) 2015-02-26 2018-10-16 Altera Corporation Packaged integrated circuit including a switch-mode regulator and method of forming the same
US10103724B2 (en) * 2016-04-25 2018-10-16 Infineon Technologies Ag Dimension regulation of power device to eliminate hot spot generation
US10355132B2 (en) 2017-03-20 2019-07-16 North Carolina State University Power MOSFETs with superior high frequency figure-of-merit
US10361578B2 (en) 2017-05-10 2019-07-23 Analog Devices, Inc. Techniques for controlling current during power up in hot swap controllers
CN109217831B (zh) * 2017-06-29 2022-05-10 爱思开海力士有限公司 具有分裂长度补偿方案的放大电路
EP3432455B1 (en) * 2017-07-17 2022-11-09 The Swatch Group Research and Development Ltd Thermoelectric generator with starting circuit
US10163893B1 (en) 2017-08-28 2018-12-25 Micron Technologies, Inc. Apparatus containing circuit-protection devices
US10431577B2 (en) 2017-12-29 2019-10-01 Micron Technology, Inc. Methods of forming circuit-protection devices
US10903355B1 (en) 2019-11-27 2021-01-26 Analog Devices International Unlimited Company Power switch arrangement

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE448333B (sv) * 1982-02-18 1987-02-09 Ericsson Telefon Ab L M Elektronisk sekring ingaende i ett distributionssystem for likstrom
US5101313A (en) * 1989-11-22 1992-03-31 Tandem Computers Incorporated System for protecting a dc power distribution bus during hot servicing
JPH05267580A (ja) * 1992-03-24 1993-10-15 Fuji Electric Co Ltd 半導体装置
JP2750986B2 (ja) * 1992-10-27 1998-05-18 尚茂 玉蟲 分割ゲート型カソード短絡構造を有する絶縁ゲート静電誘導サイリスタ
JP2678159B2 (ja) * 1992-11-06 1997-11-17 尚茂 玉蟲 分割ゲート型カソード短絡構造を有する絶縁ゲート静電誘導サイリスタ
JP3243902B2 (ja) * 1993-09-17 2002-01-07 株式会社日立製作所 半導体装置
KR0136531B1 (ko) * 1994-07-08 1998-09-15 문정환 반도체장치의 제조방법
JPH0832064A (ja) * 1994-07-15 1996-02-02 Fuji Electric Co Ltd Ｍｏｓ半導体装置とその駆動方法および駆動回路
JP3149773B2 (ja) * 1996-03-18 2001-03-26 富士電機株式会社 電流制限回路を備えた絶縁ゲートバイポーラトランジスタ
JP3464340B2 (ja) * 1996-04-19 2003-11-10 沖電気工業株式会社 半導体集積回路装置
US5889303A (en) * 1997-04-07 1999-03-30 Motorola, Inc. Split-Control gate electrically erasable programmable read only memory (EEPROM) cell
JP3077631B2 (ja) * 1997-06-06 2000-08-14 日本電気株式会社 過熱保護機能付き電力駆動用ｍｏｓ型半導体素子
US5986941A (en) * 1997-10-09 1999-11-16 Bright Microelectronics, Inc. Programming current limiter for source-side injection EEPROM cells
US6043530A (en) * 1998-04-15 2000-03-28 Chang; Ming-Bing Flash EEPROM device employing polysilicon sidewall spacer as an erase gate
JP3413569B2 (ja) * 1998-09-16 2003-06-03 株式会社日立製作所 絶縁ゲート型半導体装置およびその製造方法
JP2000101076A (ja) * 1998-09-25 2000-04-07 Toshiba Corp 絶縁ゲート型半導体素子とその駆動方法
DE19922924A1 (de) * 1999-05-19 2000-11-30 Siemens Ag Überspannungsschutzvorrichtung für einen Halbleiterschalter
US6228718B1 (en) * 1999-12-21 2001-05-08 United Microelectronics Corp. Method of fabricating a self-aligned split gate of a flash memory
US6400203B1 (en) * 2000-08-07 2002-06-04 Maxim Integrated Products, Inc. Hot swap current limit circuits and methods
WO2002067279A2 (en) * 2000-12-22 2002-08-29 Ixys Corporation Hot-swap protection circuit
US6515463B2 (en) 2001-04-05 2003-02-04 Semiconductor Components Industries Llc Method and circuit for optimizing efficiency in a high frequency switching DC-DC converter
US6744094B2 (en) * 2001-08-24 2004-06-01 Micron Technology Inc. Floating gate transistor with horizontal gate layers stacked next to vertical body
GB2384632B (en) * 2002-01-25 2005-11-16 Zetex Plc Current limiting protection circuit

Also Published As

Publication number Publication date
JP5296119B2 (ja) 2013-09-25
US7230299B2 (en) 2007-06-12
EP1671408B1 (en) 2018-02-28
JP2011135093A (ja) 2011-07-07
CN1864311A (zh) 2006-11-15
TW200520215A (en) 2005-06-16
KR101099384B1 (ko) 2011-12-29
JP2007507893A (ja) 2007-03-29
US20050179084A1 (en) 2005-08-18
US6949961B2 (en) 2005-09-27
WO2005041380A1 (en) 2005-05-06
KR20060120654A (ko) 2006-11-27
US20050072987A1 (en) 2005-04-07
JP5179755B2 (ja) 2013-04-10
EP1671408A1 (en) 2006-06-21
HK1095434A1 (en) 2007-05-04
CN100557916C (zh) 2009-11-04

Similar Documents

Publication Publication Date Title
TWI368989B (en) Power switch structure with low rdson and low current limit and method
HK1106621A1 (en) Electrical power switching system and electrical power system
GB2422732B (en) Electric Power Converter
EP1628352A4 (en) ELECTRIC SWITCH AND MEMORY BLOCK WITH THIS
HK1068723A1 (en) Operation circuit and power switching device employing the operation circuit
EP1471625A4 (en) PERFORMANCE FACTOR IMPROVEMENT CONVERTER AND CONTROL PROCESS THEREFOR
NO20042090L (no) Vindenergianlegg med stromledere anordnet formontert i tarnet
AU2003284004A8 (en) Power mosfet
HK1114250A1 (en) Energy saving electrical power control device and method
AU2003273315A8 (en) Low and high voltage electrical heating devices
EP1646135A4 (en) THREE-PHASE ELECTRICITY TRANSFORMER AND CURRENT TRANSFORMER
ZA200710544B (en) High current electrical switch and method
AU2003219831A8 (en) High voltage power mosfet having low on-resistance
GB2401961B (en) Low overhead integrated circuit power down and restart
TWI320600B (en) Low cost power mosfet with current monitoring
GB2420018B (en) Switch for high voltage and/or current
HK1118338A1 (en) Low power voltage detection circuit and method therefor
EP1717816A4 (en) CURRENT CONVERSION CIRCUIT / VOLTAGE AND ITS CONTROL METHOD
EP1950875A4 (en) ON-BOARD TRANSMISSION SWITCHING AND ELECTRICAL EQUIPMENT
HK1086944A1 (en) Electromagnetic power switch
AU2003217336A8 (en) Current collectors
EP1475814A4 (en) ELECTRICAL CONTACT AND CIRCUIT BREAKER USING THE CONTACT
AU2001244436A1 (en) Power circuit with double current limiting
HK1076927A1 (en) Electric power switch with an electronic memory unit for parameters and conversion factors
EP1800313A4 (en) CAM WITH REDUCED POWER AND POWER CONSUMPTION