HK1095434A1 - Power switch structure and method - Google Patents

Power switch structure and method

Info

Publication number
HK1095434A1
HK1095434A1 HK07102499.5A HK07102499A HK1095434A1 HK 1095434 A1 HK1095434 A1 HK 1095434A1 HK 07102499 A HK07102499 A HK 07102499A HK 1095434 A1 HK1095434 A1 HK 1095434A1
Authority
HK
Hong Kong
Prior art keywords
power switch
switch structure
power
switch
Prior art date
Application number
HK07102499.5A
Other languages
English (en)
Inventor
Stephen P Robb
David K Briggs
Original Assignee
Semiconductor Components Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Components Ind filed Critical Semiconductor Components Ind
Publication of HK1095434A1 publication Critical patent/HK1095434A1/xx

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/001Emergency protective circuit arrangements for limiting excess current or voltage without disconnection limiting speed of change of electric quantities, e.g. soft switching on or off
    • H02H9/004Emergency protective circuit arrangements for limiting excess current or voltage without disconnection limiting speed of change of electric quantities, e.g. soft switching on or off in connection with live-insertion of plug-in units
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166Soft switching
    • H03K17/167Soft switching using parallel switching arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
HK07102499.5A 2003-10-06 2007-03-07 Power switch structure and method HK1095434A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/678,769 US6949961B2 (en) 2003-10-06 2003-10-06 Power switch structure with low RDSon and low current limit
PCT/US2004/030143 WO2005041380A1 (en) 2003-10-06 2004-09-15 Power switch structure and method

Publications (1)

Publication Number Publication Date
HK1095434A1 true HK1095434A1 (en) 2007-05-04

Family

ID=34394009

Family Applications (1)

Application Number Title Priority Date Filing Date
HK07102499.5A HK1095434A1 (en) 2003-10-06 2007-03-07 Power switch structure and method

Country Status (8)

Country Link
US (2) US6949961B2 (xx)
EP (1) EP1671408B1 (xx)
JP (2) JP5179755B2 (xx)
KR (1) KR101099384B1 (xx)
CN (1) CN100557916C (xx)
HK (1) HK1095434A1 (xx)
TW (1) TWI368989B (xx)
WO (1) WO2005041380A1 (xx)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8253197B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253195B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253196B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US7230302B2 (en) * 2004-01-29 2007-06-12 Enpirion, Inc. Laterally diffused metal oxide semiconductor device and method of forming the same
US8212316B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212315B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212317B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US7414335B2 (en) * 2004-04-15 2008-08-19 Seagate Technology Inrush current controller
US7232733B2 (en) * 2004-08-23 2007-06-19 Enpirion, Inc. Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
US7190026B2 (en) * 2004-08-23 2007-03-13 Enpirion, Inc. Integrated circuit employable with a power converter
US7195981B2 (en) 2004-08-23 2007-03-27 Enpirion, Inc. Method of forming an integrated circuit employable with a power converter
US7186606B2 (en) 2004-08-23 2007-03-06 Enpirion, Inc. Method of forming an integrated circuit employable with a power converter
US7229886B2 (en) * 2004-08-23 2007-06-12 Enpirion, Inc. Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
US7335948B2 (en) * 2004-08-23 2008-02-26 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7015544B2 (en) * 2004-08-23 2006-03-21 Enpirion, Inc. Intergrated circuit employable with a power converter
US7214985B2 (en) * 2004-08-23 2007-05-08 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
JP4203464B2 (ja) * 2004-11-18 2009-01-07 パナソニック株式会社 Dc−dcコンバータ
US7609499B2 (en) * 2005-05-05 2009-10-27 Seagate Technology Llc Active current limiting circuit
US7332358B2 (en) * 2005-06-30 2008-02-19 Potentia Semiconductor Inc. MOSFET temperature sensing
US20070126871A1 (en) * 2005-12-06 2007-06-07 Henninger Paul E Iii Modular surveillance camera system with self-identification capability
US20070126872A1 (en) * 2005-12-06 2007-06-07 Michael Bolotine Modular surveillance camera system
GB2455524B (en) * 2007-12-11 2010-04-07 Wolfson Microelectronics Plc Charge pump circuit and methods of operation thereof and portable audio apparatus including charge pump circuits
GB2467450B (en) * 2007-12-11 2011-07-20 Wolfson Microelectronics Plc Drive circuit
US7760479B2 (en) * 2008-04-09 2010-07-20 Fairchild Semiconductor Corporation Technique for combining in-rush current limiting and short circuit current limiting
US7683693B2 (en) * 2008-04-10 2010-03-23 Fairchild Semiconductor Corporation Hot swap controller with zero loaded charge pump
US8050001B2 (en) * 2008-08-07 2011-11-01 Crucs Holdings, Llc Timed electrical outlet and a method of operation thereof
US8174148B2 (en) * 2008-08-07 2012-05-08 Crucs Holdings, Llc Controllable electrical outlet and a method of operation thereof
US8138933B2 (en) * 2008-11-05 2012-03-20 Crucs Holdings, Llc Systems, methods, and apparatus for automatically disabling appliances in response to a smoke detector
AU2010311332B2 (en) 2009-10-30 2015-04-23 Albumedix Ltd. Albumin variants
CN102570809B (zh) * 2010-12-31 2016-02-24 意法半导体研发(深圳)有限公司 短路保护电路及方法
TWI492277B (zh) * 2011-04-11 2015-07-11 Great Power Semiconductor Corp 具有快速切換能力之溝渠式功率金氧半導體結構之製造方法
CN103166168B (zh) * 2011-12-19 2016-11-02 上海航空电器有限公司 一种高压直流固态功率控制器
US8766365B2 (en) * 2012-02-21 2014-07-01 Micron Technology, Inc. Circuit-protection devices
JP5845108B2 (ja) 2012-02-23 2016-01-20 ルネサスエレクトロニクス株式会社 パワーデバイス
MX2014010278A (es) 2012-03-16 2015-03-05 Novozymes Biopharma Dk As Variantes de albumina.
EP2738809A3 (en) 2012-11-30 2017-05-10 Enpirion, Inc. Semiconductor device including gate drivers around a periphery thereof
US9536938B1 (en) 2013-11-27 2017-01-03 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US9673192B1 (en) 2013-11-27 2017-06-06 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US10020739B2 (en) 2014-03-27 2018-07-10 Altera Corporation Integrated current replicator and method of operating the same
US10468917B2 (en) * 2014-03-05 2019-11-05 Ricoh Co., Ltd. Battery charger
EP3130049B1 (en) * 2014-04-11 2021-07-28 Telefonaktiebolaget LM Ericsson (publ) A current control circuit and a method therefor
JP6504429B2 (ja) * 2014-12-08 2019-04-24 富士電機株式会社 スイッチング電源装置
US10103627B2 (en) 2015-02-26 2018-10-16 Altera Corporation Packaged integrated circuit including a switch-mode regulator and method of forming the same
US10103724B2 (en) * 2016-04-25 2018-10-16 Infineon Technologies Ag Dimension regulation of power device to eliminate hot spot generation
US10355132B2 (en) * 2017-03-20 2019-07-16 North Carolina State University Power MOSFETs with superior high frequency figure-of-merit
US10361578B2 (en) 2017-05-10 2019-07-23 Analog Devices, Inc. Techniques for controlling current during power up in hot swap controllers
CN109217831B (zh) * 2017-06-29 2022-05-10 爱思开海力士有限公司 具有分裂长度补偿方案的放大电路
EP3432455B1 (en) * 2017-07-17 2022-11-09 The Swatch Group Research and Development Ltd Thermoelectric generator with starting circuit
US10163893B1 (en) 2017-08-28 2018-12-25 Micron Technologies, Inc. Apparatus containing circuit-protection devices
US10431577B2 (en) 2017-12-29 2019-10-01 Micron Technology, Inc. Methods of forming circuit-protection devices
US10903355B1 (en) 2019-11-27 2021-01-26 Analog Devices International Unlimited Company Power switch arrangement

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE448333B (sv) * 1982-02-18 1987-02-09 Ericsson Telefon Ab L M Elektronisk sekring ingaende i ett distributionssystem for likstrom
US5101313A (en) * 1989-11-22 1992-03-31 Tandem Computers Incorporated System for protecting a dc power distribution bus during hot servicing
JPH05267580A (ja) * 1992-03-24 1993-10-15 Fuji Electric Co Ltd 半導体装置
JP2750986B2 (ja) * 1992-10-27 1998-05-18 尚茂 玉蟲 分割ゲート型カソード短絡構造を有する絶縁ゲート静電誘導サイリスタ
JP2678159B2 (ja) * 1992-11-06 1997-11-17 尚茂 玉蟲 分割ゲート型カソード短絡構造を有する絶縁ゲート静電誘導サイリスタ
JP3243902B2 (ja) * 1993-09-17 2002-01-07 株式会社日立製作所 半導体装置
KR0136531B1 (ko) * 1994-07-08 1998-09-15 문정환 반도체장치의 제조방법
JPH0832064A (ja) * 1994-07-15 1996-02-02 Fuji Electric Co Ltd Mos半導体装置とその駆動方法および駆動回路
JP3149773B2 (ja) * 1996-03-18 2001-03-26 富士電機株式会社 電流制限回路を備えた絶縁ゲートバイポーラトランジスタ
JP3464340B2 (ja) * 1996-04-19 2003-11-10 沖電気工業株式会社 半導体集積回路装置
US5889303A (en) * 1997-04-07 1999-03-30 Motorola, Inc. Split-Control gate electrically erasable programmable read only memory (EEPROM) cell
JP3077631B2 (ja) * 1997-06-06 2000-08-14 日本電気株式会社 過熱保護機能付き電力駆動用mos型半導体素子
US5986941A (en) * 1997-10-09 1999-11-16 Bright Microelectronics, Inc. Programming current limiter for source-side injection EEPROM cells
US6043530A (en) * 1998-04-15 2000-03-28 Chang; Ming-Bing Flash EEPROM device employing polysilicon sidewall spacer as an erase gate
JP3413569B2 (ja) * 1998-09-16 2003-06-03 株式会社日立製作所 絶縁ゲート型半導体装置およびその製造方法
JP2000101076A (ja) * 1998-09-25 2000-04-07 Toshiba Corp 絶縁ゲート型半導体素子とその駆動方法
DE19922924A1 (de) * 1999-05-19 2000-11-30 Siemens Ag Überspannungsschutzvorrichtung für einen Halbleiterschalter
US6228718B1 (en) * 1999-12-21 2001-05-08 United Microelectronics Corp. Method of fabricating a self-aligned split gate of a flash memory
US6400203B1 (en) * 2000-08-07 2002-06-04 Maxim Integrated Products, Inc. Hot swap current limit circuits and methods
WO2002067279A2 (en) * 2000-12-22 2002-08-29 Ixys Corporation Hot-swap protection circuit
US6515463B2 (en) 2001-04-05 2003-02-04 Semiconductor Components Industries Llc Method and circuit for optimizing efficiency in a high frequency switching DC-DC converter
US6744094B2 (en) * 2001-08-24 2004-06-01 Micron Technology Inc. Floating gate transistor with horizontal gate layers stacked next to vertical body
GB2384632B (en) * 2002-01-25 2005-11-16 Zetex Plc Current limiting protection circuit

Also Published As

Publication number Publication date
KR20060120654A (ko) 2006-11-27
EP1671408A1 (en) 2006-06-21
JP2011135093A (ja) 2011-07-07
EP1671408B1 (en) 2018-02-28
US6949961B2 (en) 2005-09-27
TWI368989B (en) 2012-07-21
US20050179084A1 (en) 2005-08-18
JP5296119B2 (ja) 2013-09-25
CN1864311A (zh) 2006-11-15
CN100557916C (zh) 2009-11-04
US20050072987A1 (en) 2005-04-07
TW200520215A (en) 2005-06-16
JP2007507893A (ja) 2007-03-29
US7230299B2 (en) 2007-06-12
JP5179755B2 (ja) 2013-04-10
KR101099384B1 (ko) 2011-12-29
WO2005041380A1 (en) 2005-05-06

Similar Documents

Publication Publication Date Title
HK1095434A1 (en) Power switch structure and method
HK1070755A1 (en) Power management method and power management unit
HK1106621A1 (en) Electrical power switching system and electrical power system
AU2003290986A8 (en) Power converter circuitry and method
EP1643907A4 (en) DEVICES AND METHOD FOR MEASURING LIGHT
EP1517456A4 (en) PERFORMANCE RULES AND DEVICE
EP1599904A4 (en) LATERAL LUBISTOR STRUCTURE AND METHOD
GB2400749B (en) Method and structure for a switch
GB2400747B (en) Method and structure for a switch
GB0208577D0 (en) Self-sterilising handles and switches
HK1086944A1 (en) Electromagnetic power switch
AU2003256956A8 (en) Optical switch arrangement and method
HK1068458A1 (en) Switch pushing method, and switch
TW572342U (en) Power key structure
GB2409771B8 (en) Electrical switching method and apparatus
AU2003291556A8 (en) Electrical switch and method
IL159228A0 (en) Insulating method and structure
TW577260U (en) Electric noodlemaker
TW532556U (en) Improved separated and segmented switch structure for power
GR1004681B (en) Gravity-generated power
GB0223524D0 (en) Power unit
GB0322926D0 (en) Drawing power
GB0202774D0 (en) Methods and means
GB0223365D0 (en) Methods and means
GB0216530D0 (en) Methods and means

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20200915