CN100557916C - 功率开关结构和方法 - Google Patents

功率开关结构和方法 Download PDF

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Publication number
CN100557916C
CN100557916C CNB2004800290460A CN200480029046A CN100557916C CN 100557916 C CN100557916 C CN 100557916C CN B2004800290460 A CNB2004800290460 A CN B2004800290460A CN 200480029046 A CN200480029046 A CN 200480029046A CN 100557916 C CN100557916 C CN 100557916C
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CN
China
Prior art keywords
gate
switching device
insulated gate
current
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004800290460A
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English (en)
Chinese (zh)
Other versions
CN1864311A (zh
Inventor
斯蒂芬·P·罗博
大卫·K·博里格斯
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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Publication date
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Publication of CN1864311A publication Critical patent/CN1864311A/zh
Application granted granted Critical
Publication of CN100557916C publication Critical patent/CN100557916C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/001—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection limiting speed of change of electric quantities, e.g. soft switching on or off
    • H02H9/004—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection limiting speed of change of electric quantities, e.g. soft switching on or off in connection with live-insertion of plug-in units
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H03K17/167—Soft switching using parallel switching arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
CNB2004800290460A 2003-10-06 2004-09-15 功率开关结构和方法 Expired - Fee Related CN100557916C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/678,769 2003-10-06
US10/678,769 US6949961B2 (en) 2003-10-06 2003-10-06 Power switch structure with low RDSon and low current limit

Publications (2)

Publication Number Publication Date
CN1864311A CN1864311A (zh) 2006-11-15
CN100557916C true CN100557916C (zh) 2009-11-04

Family

ID=34394009

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800290460A Expired - Fee Related CN100557916C (zh) 2003-10-06 2004-09-15 功率开关结构和方法

Country Status (7)

Country Link
US (2) US6949961B2 (https=)
EP (1) EP1671408B1 (https=)
JP (2) JP5179755B2 (https=)
KR (1) KR101099384B1 (https=)
CN (1) CN100557916C (https=)
TW (1) TWI368989B (https=)
WO (1) WO2005041380A1 (https=)

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US8212317B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253195B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212315B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212316B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
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US7229886B2 (en) * 2004-08-23 2007-06-12 Enpirion, Inc. Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
US7195981B2 (en) 2004-08-23 2007-03-27 Enpirion, Inc. Method of forming an integrated circuit employable with a power converter
US7015544B2 (en) * 2004-08-23 2006-03-21 Enpirion, Inc. Intergrated circuit employable with a power converter
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US7214985B2 (en) * 2004-08-23 2007-05-08 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7335948B2 (en) * 2004-08-23 2008-02-26 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7232733B2 (en) * 2004-08-23 2007-06-19 Enpirion, Inc. Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
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US7332358B2 (en) * 2005-06-30 2008-02-19 Potentia Semiconductor Inc. MOSFET temperature sensing
US20070126872A1 (en) * 2005-12-06 2007-06-07 Michael Bolotine Modular surveillance camera system
US20070126871A1 (en) * 2005-12-06 2007-06-07 Henninger Paul E Iii Modular surveillance camera system with self-identification capability
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US7760479B2 (en) * 2008-04-09 2010-07-20 Fairchild Semiconductor Corporation Technique for combining in-rush current limiting and short circuit current limiting
US7683693B2 (en) * 2008-04-10 2010-03-23 Fairchild Semiconductor Corporation Hot swap controller with zero loaded charge pump
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CN102570809B (zh) * 2010-12-31 2016-02-24 意法半导体研发(深圳)有限公司 短路保护电路及方法
TWI492277B (zh) * 2011-04-11 2015-07-11 Great Power Semiconductor Corp 具有快速切換能力之溝渠式功率金氧半導體結構之製造方法
CN103166168B (zh) * 2011-12-19 2016-11-02 上海航空电器有限公司 一种高压直流固态功率控制器
US8766365B2 (en) * 2012-02-21 2014-07-01 Micron Technology, Inc. Circuit-protection devices
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US9673192B1 (en) 2013-11-27 2017-06-06 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US9536938B1 (en) 2013-11-27 2017-01-03 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US10020739B2 (en) 2014-03-27 2018-07-10 Altera Corporation Integrated current replicator and method of operating the same
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JP6504429B2 (ja) * 2014-12-08 2019-04-24 富士電機株式会社 スイッチング電源装置
US10103627B2 (en) 2015-02-26 2018-10-16 Altera Corporation Packaged integrated circuit including a switch-mode regulator and method of forming the same
US10103724B2 (en) * 2016-04-25 2018-10-16 Infineon Technologies Ag Dimension regulation of power device to eliminate hot spot generation
US10355132B2 (en) 2017-03-20 2019-07-16 North Carolina State University Power MOSFETs with superior high frequency figure-of-merit
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DE19922924A1 (de) * 1999-05-19 2000-11-30 Siemens Ag Überspannungsschutzvorrichtung für einen Halbleiterschalter
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DE19922924A1 (de) * 1999-05-19 2000-11-30 Siemens Ag Überspannungsschutzvorrichtung für einen Halbleiterschalter

Also Published As

Publication number Publication date
JP5296119B2 (ja) 2013-09-25
EP1671408A1 (en) 2006-06-21
EP1671408B1 (en) 2018-02-28
WO2005041380A1 (en) 2005-05-06
JP5179755B2 (ja) 2013-04-10
US20050179084A1 (en) 2005-08-18
US20050072987A1 (en) 2005-04-07
TWI368989B (en) 2012-07-21
TW200520215A (en) 2005-06-16
KR101099384B1 (ko) 2011-12-29
KR20060120654A (ko) 2006-11-27
JP2011135093A (ja) 2011-07-07
HK1095434A1 (zh) 2007-05-04
US6949961B2 (en) 2005-09-27
CN1864311A (zh) 2006-11-15
US7230299B2 (en) 2007-06-12
JP2007507893A (ja) 2007-03-29

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