KR101061937B1 - 기판 세정 방법 및 기판 세정 장치 - Google Patents

기판 세정 방법 및 기판 세정 장치 Download PDF

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Publication number
KR101061937B1
KR101061937B1 KR1020060124421A KR20060124421A KR101061937B1 KR 101061937 B1 KR101061937 B1 KR 101061937B1 KR 1020060124421 A KR1020060124421 A KR 1020060124421A KR 20060124421 A KR20060124421 A KR 20060124421A KR 101061937 B1 KR101061937 B1 KR 101061937B1
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South Korea
Prior art keywords
substrate
liquid
rotational speed
cleaning
wafer
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KR1020060124421A
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English (en)
Korean (ko)
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KR20070065214A (ko
Inventor
히로미츠 난바
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도쿄엘렉트론가부시키가이샤
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Publication of KR20070065214A publication Critical patent/KR20070065214A/ko
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Drying Of Solid Materials (AREA)
KR1020060124421A 2005-12-19 2006-12-08 기판 세정 방법 및 기판 세정 장치 Active KR101061937B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00364966 2005-12-19
JP2005364966A JP4607755B2 (ja) 2005-12-19 2005-12-19 基板洗浄方法、基板洗浄装置、制御プログラム、およびコンピュータ読取可能な記憶媒体

Publications (2)

Publication Number Publication Date
KR20070065214A KR20070065214A (ko) 2007-06-22
KR101061937B1 true KR101061937B1 (ko) 2011-09-05

Family

ID=38172014

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060124421A Active KR101061937B1 (ko) 2005-12-19 2006-12-08 기판 세정 방법 및 기판 세정 장치

Country Status (4)

Country Link
US (1) US7699939B2 (enExample)
JP (1) JP4607755B2 (enExample)
KR (1) KR101061937B1 (enExample)
TW (1) TW200738358A (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4708243B2 (ja) * 2006-03-28 2011-06-22 東京エレクトロン株式会社 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体
KR20090010809A (ko) * 2007-07-24 2009-01-30 삼성전자주식회사 기판 처리 방법
JP5192206B2 (ja) 2007-09-13 2013-05-08 株式会社Sokudo 基板処理装置および基板処理方法
US20090241995A1 (en) * 2008-03-31 2009-10-01 Tokyo Electron Limited Substrate cleaning method and apparatus
JP5242508B2 (ja) 2009-06-26 2013-07-24 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
KR101806191B1 (ko) * 2010-06-17 2017-12-07 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 이 기판 처리 방법을 실행하기 위한 컴퓨터 프로그램이 기록된 기록 매체 및 기판 처리 장치
KR101596750B1 (ko) 2010-06-23 2016-02-23 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 이 기판 처리 방법을 실행하기 위한 컴퓨터 프로그램이 기록된 기록 매체 및 기판 처리 장치
JP5669461B2 (ja) * 2010-07-01 2015-02-12 株式会社ディスコ スピンナ洗浄装置
JP5985943B2 (ja) * 2012-09-21 2016-09-06 東京エレクトロン株式会社 液処理方法、液処理装置及び液処理用記録媒体
JP5973901B2 (ja) * 2012-12-13 2016-08-23 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
JP5680705B2 (ja) * 2013-05-17 2015-03-04 株式会社Screenホールディングス 基板処理方法
JP6379400B2 (ja) 2013-09-26 2018-08-29 株式会社Screenホールディングス 基板処理方法および基板処理装置
JP5977727B2 (ja) 2013-11-13 2016-08-24 東京エレクトロン株式会社 基板洗浄方法、基板洗浄システムおよび記憶媒体
KR101673061B1 (ko) * 2013-12-03 2016-11-04 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
JP5994804B2 (ja) * 2014-03-17 2016-09-21 東京エレクトロン株式会社 基板洗浄方法
KR101885107B1 (ko) * 2015-06-30 2018-08-06 세메스 주식회사 기판 처리 방법 및 장치
KR101817211B1 (ko) * 2016-05-27 2018-01-11 세메스 주식회사 기판 처리 장치 및 방법
KR102073339B1 (ko) * 2017-03-02 2020-02-05 무진전자 주식회사 웨이퍼 세정방법
KR102891364B1 (ko) * 2017-10-23 2025-11-25 램 리서치 아게 고 종횡비 구조체들의 정지 마찰을 방지하고 그리고/또는 고 종횡비 구조체들을 복구하기 위한 시스템들 및 방법들
CN115475794A (zh) * 2022-10-10 2022-12-16 安徽光智科技有限公司 镜头的清洗方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10172951A (ja) 1996-10-07 1998-06-26 Tokyo Electron Ltd 液処理方法及びその装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
JP3322853B2 (ja) 1999-08-10 2002-09-09 株式会社プレテック 基板の乾燥装置および洗浄装置並びに乾燥方法および洗浄方法
JP2003197590A (ja) * 2001-12-21 2003-07-11 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP3993048B2 (ja) * 2002-08-30 2007-10-17 大日本スクリーン製造株式会社 基板処理装置
JP2004111857A (ja) * 2002-09-20 2004-04-08 Dainippon Screen Mfg Co Ltd 基板処理装置
JP4057396B2 (ja) * 2002-11-01 2008-03-05 大日本スクリーン製造株式会社 基板処理装置
US20050026455A1 (en) * 2003-05-30 2005-02-03 Satomi Hamada Substrate processing apparatus and substrate processing method
CN100423205C (zh) * 2003-11-18 2008-10-01 东京毅力科创株式会社 基板清洗方法、基板清洗装置
JP2005327936A (ja) * 2004-05-14 2005-11-24 Canon Inc 基板の洗浄方法及びその製造方法
EP1763072A4 (en) * 2004-06-04 2010-02-24 Tokyo Electron Ltd SUBSTRATE PURIFICATION METHOD AND COMPUTER READABLE RECORDING MEDIUM
JP2006066501A (ja) * 2004-08-25 2006-03-09 Tokyo Seimitsu Co Ltd スピン洗浄乾燥装置及びスピン洗浄乾燥方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10172951A (ja) 1996-10-07 1998-06-26 Tokyo Electron Ltd 液処理方法及びその装置

Also Published As

Publication number Publication date
US20070137677A1 (en) 2007-06-21
JP2007173308A (ja) 2007-07-05
TWI324091B (enExample) 2010-05-01
US7699939B2 (en) 2010-04-20
JP4607755B2 (ja) 2011-01-05
TW200738358A (en) 2007-10-16
KR20070065214A (ko) 2007-06-22

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