TW200738358A - Substrate cleaning method and substrate cleaning apparatus - Google Patents

Substrate cleaning method and substrate cleaning apparatus

Info

Publication number
TW200738358A
TW200738358A TW095147503A TW95147503A TW200738358A TW 200738358 A TW200738358 A TW 200738358A TW 095147503 A TW095147503 A TW 095147503A TW 95147503 A TW95147503 A TW 95147503A TW 200738358 A TW200738358 A TW 200738358A
Authority
TW
Taiwan
Prior art keywords
substrate
rotational speed
substrate cleaning
cleaning
supplying
Prior art date
Application number
TW095147503A
Other languages
English (en)
Chinese (zh)
Other versions
TWI324091B (enExample
Inventor
Hiromitsu Nanba
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200738358A publication Critical patent/TW200738358A/zh
Application granted granted Critical
Publication of TWI324091B publication Critical patent/TWI324091B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Drying Of Solid Materials (AREA)
TW095147503A 2005-12-19 2006-12-18 Substrate cleaning method and substrate cleaning apparatus TW200738358A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005364966A JP4607755B2 (ja) 2005-12-19 2005-12-19 基板洗浄方法、基板洗浄装置、制御プログラム、およびコンピュータ読取可能な記憶媒体

Publications (2)

Publication Number Publication Date
TW200738358A true TW200738358A (en) 2007-10-16
TWI324091B TWI324091B (enExample) 2010-05-01

Family

ID=38172014

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095147503A TW200738358A (en) 2005-12-19 2006-12-18 Substrate cleaning method and substrate cleaning apparatus

Country Status (4)

Country Link
US (1) US7699939B2 (enExample)
JP (1) JP4607755B2 (enExample)
KR (1) KR101061937B1 (enExample)
TW (1) TW200738358A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8617656B2 (en) 2009-06-26 2013-12-31 Tokyo Electron Limited Liquid processing apparatus, liquid processing method, and storage medium
CN104624561A (zh) * 2013-11-13 2015-05-20 东京毅力科创株式会社 基板清洗方法、基板清洗系统
CN107591315A (zh) * 2016-05-27 2018-01-16 细美事有限公司 用于处理基板的装置和方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4708243B2 (ja) * 2006-03-28 2011-06-22 東京エレクトロン株式会社 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体
KR20090010809A (ko) * 2007-07-24 2009-01-30 삼성전자주식회사 기판 처리 방법
JP5192206B2 (ja) 2007-09-13 2013-05-08 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
US20090241995A1 (en) * 2008-03-31 2009-10-01 Tokyo Electron Limited Substrate cleaning method and apparatus
KR101806191B1 (ko) * 2010-06-17 2017-12-07 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 이 기판 처리 방법을 실행하기 위한 컴퓨터 프로그램이 기록된 기록 매체 및 기판 처리 장치
KR101596750B1 (ko) 2010-06-23 2016-02-23 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 이 기판 처리 방법을 실행하기 위한 컴퓨터 프로그램이 기록된 기록 매체 및 기판 처리 장치
JP5669461B2 (ja) * 2010-07-01 2015-02-12 株式会社ディスコ スピンナ洗浄装置
JP5985943B2 (ja) * 2012-09-21 2016-09-06 東京エレクトロン株式会社 液処理方法、液処理装置及び液処理用記録媒体
JP5973901B2 (ja) * 2012-12-13 2016-08-23 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
JP5680705B2 (ja) * 2013-05-17 2015-03-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP6379400B2 (ja) 2013-09-26 2018-08-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR101673061B1 (ko) * 2013-12-03 2016-11-04 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
JP5994804B2 (ja) * 2014-03-17 2016-09-21 東京エレクトロン株式会社 基板洗浄方法
KR101885107B1 (ko) * 2015-06-30 2018-08-06 세메스 주식회사 기판 처리 방법 및 장치
KR102073339B1 (ko) * 2017-03-02 2020-02-05 무진전자 주식회사 웨이퍼 세정방법
KR102891364B1 (ko) * 2017-10-23 2025-11-25 램 리서치 아게 고 종횡비 구조체들의 정지 마찰을 방지하고 그리고/또는 고 종횡비 구조체들을 복구하기 위한 시스템들 및 방법들
CN115475794A (zh) * 2022-10-10 2022-12-16 安徽光智科技有限公司 镜头的清洗方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
JP3691227B2 (ja) * 1996-10-07 2005-09-07 東京エレクトロン株式会社 液処理方法及びその装置
JP3322853B2 (ja) 1999-08-10 2002-09-09 株式会社プレテック 基板の乾燥装置および洗浄装置並びに乾燥方法および洗浄方法
JP2003197590A (ja) * 2001-12-21 2003-07-11 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP3993048B2 (ja) * 2002-08-30 2007-10-17 大日本スクリーン製造株式会社 基板処理装置
JP2004111857A (ja) * 2002-09-20 2004-04-08 Dainippon Screen Mfg Co Ltd 基板処理装置
JP4057396B2 (ja) * 2002-11-01 2008-03-05 大日本スクリーン製造株式会社 基板処理装置
US20050026455A1 (en) * 2003-05-30 2005-02-03 Satomi Hamada Substrate processing apparatus and substrate processing method
CN100423205C (zh) * 2003-11-18 2008-10-01 东京毅力科创株式会社 基板清洗方法、基板清洗装置
JP2005327936A (ja) * 2004-05-14 2005-11-24 Canon Inc 基板の洗浄方法及びその製造方法
EP1763072A4 (en) * 2004-06-04 2010-02-24 Tokyo Electron Ltd SUBSTRATE PURIFICATION METHOD AND COMPUTER READABLE RECORDING MEDIUM
JP2006066501A (ja) * 2004-08-25 2006-03-09 Tokyo Seimitsu Co Ltd スピン洗浄乾燥装置及びスピン洗浄乾燥方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8617656B2 (en) 2009-06-26 2013-12-31 Tokyo Electron Limited Liquid processing apparatus, liquid processing method, and storage medium
CN104624561A (zh) * 2013-11-13 2015-05-20 东京毅力科创株式会社 基板清洗方法、基板清洗系统
TWI580485B (zh) * 2013-11-13 2017-05-01 Tokyo Electron Ltd Substrate cleaning method, substrate cleaning system and memory media
US10043652B2 (en) 2013-11-13 2018-08-07 Tokyo Electron Limited Substrate cleaning method, substrate cleaning system, and memory medium
CN107591315A (zh) * 2016-05-27 2018-01-16 细美事有限公司 用于处理基板的装置和方法
CN107591315B (zh) * 2016-05-27 2020-12-29 细美事有限公司 用于处理基板的装置和方法
US11145520B2 (en) 2016-05-27 2021-10-12 Semes Co., Ltd. Method for treating substrate involving supplying treatment liquid to peripheral area of substrate by second nozzle

Also Published As

Publication number Publication date
US20070137677A1 (en) 2007-06-21
JP2007173308A (ja) 2007-07-05
TWI324091B (enExample) 2010-05-01
US7699939B2 (en) 2010-04-20
JP4607755B2 (ja) 2011-01-05
KR101061937B1 (ko) 2011-09-05
KR20070065214A (ko) 2007-06-22

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