KR101058922B1 - 범프들이 형성되어 있는 웨이퍼를 처리하는 웨이퍼 처리 방법 - Google Patents
범프들이 형성되어 있는 웨이퍼를 처리하는 웨이퍼 처리 방법 Download PDFInfo
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- KR101058922B1 KR101058922B1 KR1020080137330A KR20080137330A KR101058922B1 KR 101058922 B1 KR101058922 B1 KR 101058922B1 KR 1020080137330 A KR1020080137330 A KR 1020080137330A KR 20080137330 A KR20080137330 A KR 20080137330A KR 101058922 B1 KR101058922 B1 KR 101058922B1
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- wafer
- bumps
- resin layer
- bump area
- matching member
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- 238000012545 processing Methods 0.000 title claims abstract description 11
- 238000003672 processing method Methods 0.000 title claims abstract description 8
- 235000012431 wafers Nutrition 0.000 title description 99
- 239000011347 resin Substances 0.000 claims abstract description 44
- 229920005989 resin Polymers 0.000 claims abstract description 44
- 238000000227 grinding Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 15
- 230000001681 protective effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
Description
Claims (4)
- 웨이퍼의 정면 위에 범프들이 형성되어 있는 웨이퍼를 처리하기 위한 웨이퍼 처리 방법으로서,범프들이 형성되어 있는 웨이퍼의 범프 영역에만 정합하는 외곽 형상을 갖고 있는 범프 영역-정합 부재를 테이블 위에 유지하는 단계와;상기 범프 영역-정합 부재 주위에 상기 범프 영역-정합 부재의 두께와 동일하거나 그 두께보다 크게 수지를 도포함으로써 수지 층을 형성하는 단계와;상기 수지 층과 함께 상기 범프 영역-정합 부재를 사전에 미리 결정된 두께로 연삭하는 단계와;상기 수지 층 내에 요부(concave part)를 형성하기 위해, 상기 테이블로부터 상기 범프 영역-정합 부재를 제거하는 단계와;상기 웨이퍼의 정면 위에 필름을 부착하는 단계와상기 웨이퍼를 상기 수지 층의 상기 요부 내에 배치하고, 상기 웨이퍼의 배면이 위쪽을 향하도록 상기 웨이퍼를 상기 테이블 위에서 유지하는 단계를 포함하는 것을 특징으로 하는 웨이퍼 처리 방법.
- 제1항에 있어서,상기 사전에 미리 결정된 두께가 상기 웨이퍼의 정면과 상기 범프들의 상단부 사이의 거리와 동일한 것을 특징으로 하는 웨이퍼 처리 방법.
- 제1항 또는 제2항에 있어서,상기 웨이퍼의 배면을 연삭하는 단계를 추가로 포함하는 것을 특징으로 하는 웨이퍼 처리 방법.
- 제1항 또는 제2항에 있어서,상기 범프 영역-정합 부재가 상기 웨이퍼의 크기와 동일한 크기의 다른 웨이퍼로 제작되는 것을 특징으로 하는 웨이퍼 처리 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2008-018927 | 2008-01-30 | ||
JP2008018927A JP5197037B2 (ja) | 2008-01-30 | 2008-01-30 | バンプが形成されたウェーハを処理するウェーハ処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090083845A KR20090083845A (ko) | 2009-08-04 |
KR101058922B1 true KR101058922B1 (ko) | 2011-08-24 |
Family
ID=40874225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080137330A KR101058922B1 (ko) | 2008-01-30 | 2008-12-30 | 범프들이 형성되어 있는 웨이퍼를 처리하는 웨이퍼 처리 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8052505B2 (ko) |
JP (1) | JP5197037B2 (ko) |
KR (1) | KR101058922B1 (ko) |
DE (1) | DE102009006237B4 (ko) |
SG (1) | SG154390A1 (ko) |
TW (1) | TWI390622B (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5335593B2 (ja) * | 2009-07-23 | 2013-11-06 | 株式会社ディスコ | 研削装置のチャックテーブル |
JP5836757B2 (ja) * | 2011-11-02 | 2015-12-24 | 株式会社ディスコ | 板状物の研削方法 |
JP6009217B2 (ja) * | 2012-05-18 | 2016-10-19 | 株式会社ディスコ | 保護部材の貼着方法 |
JP7157301B2 (ja) | 2017-11-06 | 2022-10-20 | 株式会社東京精密 | ウェーハの加工方法 |
KR102233125B1 (ko) | 2020-07-10 | 2021-03-29 | 이지복 | 인공치아 가공장치 및 상기 장치로 가공된 인공치아 |
CN114770366B (zh) * | 2022-05-17 | 2023-11-17 | 西安奕斯伟材料科技股份有限公司 | 一种硅片双面研磨装置的静压板及硅片双面研磨装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004288725A (ja) | 2003-03-19 | 2004-10-14 | Citizen Watch Co Ltd | 半導体装置の製造方法,この製造方法に用いるシール部材及びこのシール部材の供給装置 |
JP2005303214A (ja) | 2004-04-16 | 2005-10-27 | Matsushita Electric Ind Co Ltd | 半導体ウェーハの研削方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7059942B2 (en) * | 2000-09-27 | 2006-06-13 | Strasbaugh | Method of backgrinding wafers while leaving backgrinding tape on a chuck |
JP2003051473A (ja) * | 2001-08-03 | 2003-02-21 | Disco Abrasive Syst Ltd | 半導体ウェーハの裏面研削方法 |
JP2003168664A (ja) * | 2001-11-30 | 2003-06-13 | Seiko Epson Corp | 半導体装置の製造方法及び半導体ウェハ、ウェハ保護テープ |
JP2004079951A (ja) * | 2002-08-22 | 2004-03-11 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
US6869832B2 (en) * | 2003-02-07 | 2005-03-22 | Lockheed Martin Corporation | Method for planarizing bumped die |
US7025891B2 (en) * | 2003-08-29 | 2006-04-11 | International Business Machines Corporation | Method of polishing C4 molybdenum masks to remove molybdenum peaks |
JP4447280B2 (ja) * | 2003-10-16 | 2010-04-07 | リンテック株式会社 | 表面保護用シートおよび半導体ウエハの研削方法 |
US7135124B2 (en) * | 2003-11-13 | 2006-11-14 | International Business Machines Corporation | Method for thinning wafers that have contact bumps |
TWI234211B (en) * | 2003-12-26 | 2005-06-11 | Advanced Semiconductor Eng | Method for forming an underfilling layer on a bumped wafer |
JP2005109433A (ja) | 2004-03-31 | 2005-04-21 | Disco Abrasive Syst Ltd | 半導体ウエーハの切削方法および研削用のバンプ保護部材 |
JP2007043101A (ja) * | 2005-06-30 | 2007-02-15 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP4273346B2 (ja) * | 2005-07-22 | 2009-06-03 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
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2008
- 2008-01-30 JP JP2008018927A patent/JP5197037B2/ja not_active Expired - Fee Related
- 2008-12-22 SG SG200809509-3A patent/SG154390A1/en unknown
- 2008-12-30 KR KR1020080137330A patent/KR101058922B1/ko active IP Right Grant
-
2009
- 2009-01-23 TW TW098103036A patent/TWI390622B/zh not_active IP Right Cessation
- 2009-01-27 US US12/360,610 patent/US8052505B2/en not_active Expired - Fee Related
- 2009-01-27 DE DE102009006237A patent/DE102009006237B4/de not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004288725A (ja) | 2003-03-19 | 2004-10-14 | Citizen Watch Co Ltd | 半導体装置の製造方法,この製造方法に用いるシール部材及びこのシール部材の供給装置 |
JP2005303214A (ja) | 2004-04-16 | 2005-10-27 | Matsushita Electric Ind Co Ltd | 半導体ウェーハの研削方法 |
Also Published As
Publication number | Publication date |
---|---|
SG154390A1 (en) | 2009-08-28 |
TW200949920A (en) | 2009-12-01 |
JP2009182099A (ja) | 2009-08-13 |
DE102009006237B4 (de) | 2011-12-08 |
TWI390622B (zh) | 2013-03-21 |
US20090191796A1 (en) | 2009-07-30 |
DE102009006237A1 (de) | 2009-08-20 |
KR20090083845A (ko) | 2009-08-04 |
US8052505B2 (en) | 2011-11-08 |
JP5197037B2 (ja) | 2013-05-15 |
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