JP5356896B2 - 半導体装置の製造方法 - Google Patents
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Description
一方、第1の半導体デバイスが複数形成されたウエーハに第2の半導体デバイスを接合する前に、第1の半導体デバイスが複数形成されたウエーハの裏面を研削して100μm以下の厚みに形成すると、剛性が低下するため、後工程における取り扱いが困難となる。
表面に格子状に形成された複数のストリートによって複数の領域が区画されるとともに該区画された領域に該第1の半導体デバイスが形成されたデバイス領域と該デバイス領域を囲繞する外周余剰領域とを備えたウエーハの裏面における該デバイス領域に対応する領域を研削して円形状の凹部に形成することにより該デバイス領域の厚さを所定の仕上がり厚さに形成するとともに、ウエーハの裏面における該外周余剰領域に対応する領域を残存させて環状の補強部を形成する裏面研削工程と、
該裏面研削工程が実施されたウエーハの表面に形成された複数の該第1の半導体デバイスの表面の所定位置に該第2の半導体デバイスを接合するデバイス接合工程と、
該デバイス接合工程が実施された該第1の半導体デバイスの表面に接合された該第2の半導体デバイスを樹脂でモールドする樹脂モールド工程と、
該樹脂モールド工程において該第2の半導体デバイスをモールドした樹脂の上面を研削して平坦化する平坦化工程と、
該平坦化工程が実施されたウエーハを該ストリートに沿って分割し、該第1の半導体デバイスの表面に該第2の半導体デバイスが接合された個々の半導体装置に分離するウエーハ分割工程と、を含み、
該デバイス接合工程と該平坦化工程および該ウエーハ分割工程は、ウエーハの裏面に形成された該円形状の凹部を嵌合する円形状の段部を上面に備えたテーブルを用い、該テーブルの該円形状の段部にウエーハの裏面に形成された円形状の凹部を嵌合した状態で実施する、
ことを特徴とする半導体装置の製造方法が提供される。
また、本発明においては、デバイス接合工程と平坦化工程およびウエーハ分割工程は、ウエーハの裏面に形成された円形状の凹部を嵌合する円形状の段部を上面に備えたテーブルを用い、テーブルの円形状の段部にウエーハの裏面に形成された円形状の凹部を嵌合した状態で実施するので、第1の半導体デバイスが形成されたウエーハを破損させることなく実施することができる。
図1には本発明による半導体装置の製造方法に用いる第1の半導体デバイスが複数形成されたウエーハの斜視図が示されている。図1に示すウエーハ2は、例えば厚さが700μmのシリコンウエーハからなっており、表面2aに複数のストリート21が格子状に形成されているとともに、該複数のストリート21によって区画された複数の領域にIC、LSI等の親デバイスとなる第1の半導体デバイス22が形成されている。このように構成されたウエーハ2は、半導体デバイス22が形成されているデバイス領域23と、該デバイス領域23を囲繞する外周余剰領域24を備えている。
21:ストリート
22:第1の半導体デバイス
23:デバイス領域
24:外周余剰領域
200:ウエーハ
220:第2の半導体デバイス
3:保護部材
4:研削装置
41:研削装置のチャックテーブル
42:研削手段
424:研削ホイール
5:ボンディング装置
51:保持テーブル
52:吸着ハンド
6:研削装置
61:研削装置のチャックテーブル
62:研削手段
624:研削ホイール
7:環状のフレーム
70:ダイシングテープ
80:切削装置
81:切削装置のチャックテーブル
82:切削手段
821:切削ブレード
Claims (1)
- 第1の半導体デバイスの表面に該第1の半導体デバイスより小さい第2の半導体デバイスを接合して構成する半導体装置の製造方法であって、
表面に格子状に形成された複数のストリートによって複数の領域が区画されるとともに該区画された領域に該第1の半導体デバイスが形成されたデバイス領域と該デバイス領域を囲繞する外周余剰領域とを備えたウエーハの裏面における該デバイス領域に対応する領域を研削して円形状の凹部に形成することにより該デバイス領域の厚さを所定の仕上がり厚さに形成するとともに、ウエーハの裏面における該外周余剰領域に対応する領域を残存させて環状の補強部を形成する裏面研削工程と、
該裏面研削工程が実施されたウエーハの表面に形成された複数の該第1の半導体デバイスの表面の所定位置に該第2の半導体デバイスを接合するデバイス接合工程と、
該デバイス接合工程が実施された該第1の半導体デバイスの表面に接合された該第2の半導体デバイスを樹脂でモールドする樹脂モールド工程と、
該樹脂モールド工程において該第2の半導体デバイスをモールドした樹脂の上面を研削して平坦化する平坦化工程と、
該平坦化工程が実施されたウエーハを該ストリートに沿って分割し、該第1の半導体デバイスの表面に該第2の半導体デバイスが接合された個々の半導体装置に分離するウエーハ分割工程と、を含み、
該デバイス接合工程と該平坦化工程および該ウエーハ分割工程は、ウエーハの裏面に形成された該円形状の凹部を嵌合する円形状の段部を上面に備えたテーブルを用い、該テーブルの該円形状の段部にウエーハの裏面に形成された円形状の凹部を嵌合した状態で実施する、
ことを特徴とする半導体装置の製造方法。
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JP2009095075A JP5356896B2 (ja) | 2009-04-09 | 2009-04-09 | 半導体装置の製造方法 |
US12/722,762 US20100261309A1 (en) | 2009-04-09 | 2010-03-12 | Method of manufacturing semiconductor device |
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JP2009095075A JP5356896B2 (ja) | 2009-04-09 | 2009-04-09 | 半導体装置の製造方法 |
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JP5772092B2 (ja) * | 2011-03-11 | 2015-09-02 | 富士電機株式会社 | 半導体製造方法および半導体製造装置 |
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JP3339838B2 (ja) * | 1999-06-07 | 2002-10-28 | ローム株式会社 | 半導体装置およびその製造方法 |
JP2001176898A (ja) * | 1999-12-20 | 2001-06-29 | Mitsui High Tec Inc | 半導体パッケージの製造方法 |
JP2002016022A (ja) * | 2000-06-29 | 2002-01-18 | Toshiba Corp | 半導体装置の製造方法 |
JP2006222119A (ja) * | 2005-02-08 | 2006-08-24 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2007123362A (ja) * | 2005-10-25 | 2007-05-17 | Disco Abrasive Syst Ltd | デバイスの製造方法 |
JP4749851B2 (ja) * | 2005-11-29 | 2011-08-17 | 株式会社ディスコ | ウェーハの分割方法 |
JP4767702B2 (ja) * | 2006-01-23 | 2011-09-07 | 株式会社ディスコ | ウエーハの分割方法 |
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JP2010245443A (ja) | 2010-10-28 |
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