JP6095325B2 - バンプ付きデバイスウェーハの加工方法 - Google Patents
バンプ付きデバイスウェーハの加工方法 Download PDFInfo
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- JP6095325B2 JP6095325B2 JP2012237642A JP2012237642A JP6095325B2 JP 6095325 B2 JP6095325 B2 JP 6095325B2 JP 2012237642 A JP2012237642 A JP 2012237642A JP 2012237642 A JP2012237642 A JP 2012237642A JP 6095325 B2 JP6095325 B2 JP 6095325B2
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- JP
- Japan
- Prior art keywords
- wafer
- region
- adhesive
- carrier
- carrier wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000003672 processing method Methods 0.000 title description 3
- 239000000853 adhesive Substances 0.000 claims description 46
- 230000001070 adhesive effect Effects 0.000 claims description 45
- 230000002093 peripheral effect Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
11 デバイスウェーハ
11a 表面
11b 裏面
12 ノッチ
15 デバイス
17 デバイス領域
19 外周余剰領域
52 バンプ
61 キャリアウェーハ
61a 表面
62 環状凸部
63 環状溝
64 接着剤
67 凹部
Claims (1)
- 表面に形成された交差する複数の分割予定ラインで区画された各領域にそれぞれデバイスが形成されたデバイス領域と該デバイス領域を囲繞する外周余剰領域とを備え、該デバイスは複数のバンプを有するバンプ付きデバイスウェーハの加工方法であって、
該デバイスウェーハの該デバイス領域に対応する領域に形成された該バンプの高さに相当する深さを有した凹部と、該デバイスウェーハの該外周余剰領域に対応し該凹部を囲繞する環状凸部と、を備え、該環状凸部上面に環状溝が形成された該デバイスウェーハの表面が支持されるキャリアウェーハを準備するキャリアウェーハ準備ステップと、
該キャリアウェーハの該環状溝に該環状凸部上面から突出するよう接着剤を配設する接着剤配設ステップと、
該接着剤配設ステップを実施した後、該キャリアウェーハの表面と該デバイスウェーハの表面を貼り合せ該接着剤で該デバイスウェーハを該キャリアウェーハに固定するとともに該キャリアウェーハの該凹部に該バンプを収容する、ウェーハ貼り合せステップと、
該ウェーハ貼り合せステップを実施した後、該デバイスウェーハの裏面側を研削、又は、研磨して所定厚みへと薄化する薄化ステップと、
該薄化ステップを実施した後、該キャリアウェーハの該環状溝の内周と該凹部の外周との間の領域に対応する該デバイスウェーハの部位に対し切削ブレードで切り込み、該デバイスウェーハの該デバイス領域を該キャリアウェーハから切り離す、切り離しステップと、を備え、
該環状溝に配設される該接着剤の量は、該接着剤が該環状溝からあふれ出ない量に設定されることを特徴とするバンプ付きデバイスウェーハの加工方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/410,794 | 2012-03-02 | ||
US13/410,794 US8580655B2 (en) | 2012-03-02 | 2012-03-02 | Processing method for bump-included device wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013183157A JP2013183157A (ja) | 2013-09-12 |
JP6095325B2 true JP6095325B2 (ja) | 2017-03-15 |
Family
ID=49043077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012237642A Active JP6095325B2 (ja) | 2012-03-02 | 2012-10-29 | バンプ付きデバイスウェーハの加工方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8580655B2 (ja) |
JP (1) | JP6095325B2 (ja) |
KR (1) | KR101905199B1 (ja) |
CN (1) | CN103295948B (ja) |
TW (1) | TWI576906B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013036230A1 (en) * | 2011-09-08 | 2013-03-14 | Intel Corporation | Patterned adhesive tape for backgrinding processes |
CN103918083A (zh) | 2011-10-01 | 2014-07-09 | 英特尔公司 | 非平面晶体管的源极/漏极触点 |
KR20130137475A (ko) * | 2012-06-07 | 2013-12-17 | 삼성전자주식회사 | 기판 처리방법 및 그에 사용되는 서포트 기판 |
CN104641462A (zh) * | 2012-07-30 | 2015-05-20 | 埃里希·塔尔纳 | 基板复合物、用于结合基板的方法和装置 |
EP2752871B1 (en) * | 2013-01-08 | 2015-09-16 | ams AG | Method of application of a carrier to a device wafer |
WO2014188879A1 (ja) * | 2013-05-24 | 2014-11-27 | 富士電機株式会社 | 半導体装置の製造方法 |
JP6230381B2 (ja) * | 2013-11-15 | 2017-11-15 | 株式会社ディスコ | 加工方法 |
JP6344971B2 (ja) | 2014-05-16 | 2018-06-20 | 株式会社ディスコ | サポートプレート、サポートプレートの形成方法及びウェーハの加工方法 |
DE102014227005B4 (de) * | 2014-12-29 | 2023-09-07 | Disco Corporation | Verfahren zum Aufteilen eines Wafers in Chips |
DE102015002542B4 (de) | 2015-02-27 | 2023-07-20 | Disco Corporation | Waferteilungsverfahren |
CN105244308B (zh) * | 2015-11-16 | 2018-08-03 | 华天科技(昆山)电子有限公司 | 多孔载片临时键合拿持薄晶片的方法 |
CN107331644A (zh) * | 2016-04-29 | 2017-11-07 | 上海微电子装备(集团)股份有限公司 | 一种晶圆临时键合方法 |
CN107910288B (zh) * | 2017-10-31 | 2020-04-24 | 华天科技(昆山)电子有限公司 | 基于太鼓晶圆的晶圆级封装结构及方法 |
KR102477355B1 (ko) | 2018-10-23 | 2022-12-15 | 삼성전자주식회사 | 캐리어 기판 및 이를 이용한 기판 처리 장치 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2594813Y2 (ja) * | 1991-09-13 | 1999-05-10 | 旭光学工業株式会社 | 接着部材 |
US6524881B1 (en) | 2000-08-25 | 2003-02-25 | Micron Technology, Inc. | Method and apparatus for marking a bare semiconductor die |
US6506681B2 (en) | 2000-12-06 | 2003-01-14 | Micron Technology, Inc. | Thin flip—chip method |
US6949158B2 (en) | 2001-05-14 | 2005-09-27 | Micron Technology, Inc. | Using backgrind wafer tape to enable wafer mounting of bumped wafers |
EP1507292B1 (en) | 2002-05-20 | 2012-05-02 | Sumco Corporation | Method of manufacturing the substrate, and wafer outer periphery pressing jigs used for the method |
JP2004207606A (ja) | 2002-12-26 | 2004-07-22 | Disco Abrasive Syst Ltd | ウェーハサポートプレート |
US7713841B2 (en) | 2003-09-19 | 2010-05-11 | Micron Technology, Inc. | Methods for thinning semiconductor substrates that employ support structures formed on the substrates |
JP4462997B2 (ja) * | 2003-09-26 | 2010-05-12 | 株式会社ディスコ | ウェーハの加工方法 |
WO2006129458A1 (ja) * | 2005-05-30 | 2006-12-07 | Jsr Corporation | 固定剤付きウエハ及び固定剤付きウエハの製造方法 |
JP2007019379A (ja) | 2005-07-11 | 2007-01-25 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
KR100857763B1 (ko) | 2007-12-14 | 2008-09-10 | (주)에피플러스 | 기판 접합 장치 |
FR2935536B1 (fr) | 2008-09-02 | 2010-09-24 | Soitec Silicon On Insulator | Procede de detourage progressif |
JP5361634B2 (ja) * | 2009-09-25 | 2013-12-04 | 信越ポリマー株式会社 | 半導体ウェーハ用チャックテーブル及び半導体ウェーハの加工方法 |
KR101271521B1 (ko) * | 2009-11-23 | 2013-06-05 | 엘지디스플레이 주식회사 | 유기전계발광소자 |
JP2012043824A (ja) * | 2010-08-12 | 2012-03-01 | Disco Abrasive Syst Ltd | ウエーハの加工方法及び保護部材 |
US8461019B2 (en) * | 2011-07-19 | 2013-06-11 | Disco Corporation | Method of processing device wafer |
-
2012
- 2012-03-02 US US13/410,794 patent/US8580655B2/en active Active
- 2012-10-29 JP JP2012237642A patent/JP6095325B2/ja active Active
-
2013
- 2013-02-21 TW TW102106000A patent/TWI576906B/zh active
- 2013-02-26 KR KR1020130020401A patent/KR101905199B1/ko active IP Right Grant
- 2013-02-27 CN CN201310061502.0A patent/CN103295948B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US8580655B2 (en) | 2013-11-12 |
TW201347017A (zh) | 2013-11-16 |
US20130230966A1 (en) | 2013-09-05 |
CN103295948B (zh) | 2017-09-12 |
KR20130100710A (ko) | 2013-09-11 |
KR101905199B1 (ko) | 2018-10-05 |
CN103295948A (zh) | 2013-09-11 |
TWI576906B (zh) | 2017-04-01 |
JP2013183157A (ja) | 2013-09-12 |
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