KR101033399B1 - 피처리체의 산화방법 - Google Patents

피처리체의 산화방법 Download PDF

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Publication number
KR101033399B1
KR101033399B1 KR1020047021595A KR20047021595A KR101033399B1 KR 101033399 B1 KR101033399 B1 KR 101033399B1 KR 1020047021595 A KR1020047021595 A KR 1020047021595A KR 20047021595 A KR20047021595 A KR 20047021595A KR 101033399 B1 KR101033399 B1 KR 101033399B1
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KR
South Korea
Prior art keywords
film
gas
oxidation
oxidizing
nitride film
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Expired - Fee Related
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KR1020047021595A
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English (en)
Korean (ko)
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KR20050016682A (ko
Inventor
니시타다쓰오
요네카와쓰카사
스즈키게이스케
사토도루
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20050016682A publication Critical patent/KR20050016682A/ko
Application granted granted Critical
Publication of KR101033399B1 publication Critical patent/KR101033399B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020047021595A 2002-07-05 2003-07-07 피처리체의 산화방법 Expired - Fee Related KR101033399B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002197671A JP3578155B2 (ja) 2002-07-05 2002-07-05 被処理体の酸化方法
JPJP-P-2002-00197671 2002-07-05
PCT/JP2003/008609 WO2004006322A1 (ja) 2002-07-05 2003-07-07 被処理体の酸化方法

Publications (2)

Publication Number Publication Date
KR20050016682A KR20050016682A (ko) 2005-02-21
KR101033399B1 true KR101033399B1 (ko) 2011-05-09

Family

ID=30112407

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047021595A Expired - Fee Related KR101033399B1 (ko) 2002-07-05 2003-07-07 피처리체의 산화방법

Country Status (5)

Country Link
US (1) US7304002B2 (enExample)
JP (1) JP3578155B2 (enExample)
KR (1) KR101033399B1 (enExample)
TW (1) TW200402790A (enExample)
WO (1) WO2004006322A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4164092B2 (ja) * 2003-08-26 2008-10-08 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
JP4238812B2 (ja) * 2003-11-20 2009-03-18 東京エレクトロン株式会社 被処理体の酸化装置
JP4586544B2 (ja) * 2004-02-17 2010-11-24 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
JP4706260B2 (ja) * 2004-02-25 2011-06-22 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
JP4609098B2 (ja) * 2004-03-24 2011-01-12 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
US8454749B2 (en) * 2005-12-19 2013-06-04 Tokyo Electron Limited Method and system for sealing a first assembly to a second assembly of a processing system
JP5383332B2 (ja) * 2008-08-06 2014-01-08 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
JP2010087167A (ja) * 2008-09-30 2010-04-15 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP5573772B2 (ja) 2010-06-22 2014-08-20 東京エレクトロン株式会社 成膜方法及び成膜装置
JP6127770B2 (ja) * 2013-06-24 2017-05-17 富士通セミコンダクター株式会社 半導体装置の製造方法
JP6512860B2 (ja) * 2015-02-24 2019-05-15 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
JP6304410B2 (ja) * 2017-01-26 2018-04-04 富士通セミコンダクター株式会社 半導体装置の製造方法
JP6919350B2 (ja) * 2017-06-09 2021-08-18 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000024049A1 (en) * 1998-10-19 2000-04-27 Applied Materials, Inc. Method of oxidizing a substrate in the presence of nitride and oxynitride films
JP2001274154A (ja) * 2000-01-18 2001-10-05 Applied Materials Inc 成膜方法、成膜装置、半導体装置及びその製造方法
JP2002176052A (ja) * 2000-05-02 2002-06-21 Tokyo Electron Ltd 被処理体の酸化方法及び酸化装置
JP2002353214A (ja) 2001-05-24 2002-12-06 Nec Corp 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS571232A (en) 1980-06-04 1982-01-06 Mitsubishi Electric Corp Oxide film forming device
JP2902012B2 (ja) 1989-10-27 1999-06-07 国際電気株式会社 低圧酸化装置
KR100560867B1 (ko) 2000-05-02 2006-03-13 동경 엘렉트론 주식회사 산화방법 및 산화시스템

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000024049A1 (en) * 1998-10-19 2000-04-27 Applied Materials, Inc. Method of oxidizing a substrate in the presence of nitride and oxynitride films
JP2001274154A (ja) * 2000-01-18 2001-10-05 Applied Materials Inc 成膜方法、成膜装置、半導体装置及びその製造方法
JP2002176052A (ja) * 2000-05-02 2002-06-21 Tokyo Electron Ltd 被処理体の酸化方法及び酸化装置
JP2002353214A (ja) 2001-05-24 2002-12-06 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
WO2004006322A1 (ja) 2004-01-15
JP2004039990A (ja) 2004-02-05
TW200402790A (en) 2004-02-16
TWI324364B (enExample) 2010-05-01
KR20050016682A (ko) 2005-02-21
JP3578155B2 (ja) 2004-10-20
US7304002B2 (en) 2007-12-04
US20060094248A1 (en) 2006-05-04

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