KR101031926B1 - 무암모니아 불화염을 포함하는 마이크로일렉트로닉 세정조성물 - Google Patents

무암모니아 불화염을 포함하는 마이크로일렉트로닉 세정조성물 Download PDF

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KR101031926B1
KR101031926B1 KR1020047000267A KR20047000267A KR101031926B1 KR 101031926 B1 KR101031926 B1 KR 101031926B1 KR 1020047000267 A KR1020047000267 A KR 1020047000267A KR 20047000267 A KR20047000267 A KR 20047000267A KR 101031926 B1 KR101031926 B1 KR 101031926B1
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acid
delete delete
hydroxyethyl
dielectric constant
cleaning composition
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KR20040019046A (ko
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허수치엔-핀셔만
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아반토르 퍼포먼스 머티리얼스, 인크.
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Assigned to 아반토 퍼포먼스 머티리얼즈, 엘엘씨 reassignment 아반토 퍼포먼스 머티리얼즈, 엘엘씨 권리의 전부이전등록 Assignors: 아반토르 퍼포먼스 머티리얼스, 인크.
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    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
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    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38Cationic compounds
    • C11D1/62Quaternary ammonium compounds
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    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005Other compounding ingredients characterised by their effect
    • C11D3/0073Anticorrosion compositions
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    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02Inorganic compounds ; Elemental compounds
    • C11D3/04Water-soluble compounds
    • C11D3/046Salts
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    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
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    • C11D3/2068Ethers
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    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
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    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
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    • C11D3/30Amines; Substituted amines ; Quaternized amines
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    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
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    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • C11D7/04Water-soluble compounds
    • C11D7/10Salts
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    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
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    • C11D7/261Alcohols; Phenols
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    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3209Amines or imines with one to four nitrogen atoms; Quaternized amines
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    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
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    • C11D7/3218Alkanolamines or alkanolimines
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    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
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    • C11D7/3281Heterocyclic compounds
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    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • C11D7/5009Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
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    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
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    • C11D7/5013Organic solvents containing nitrogen
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    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
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    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • C11D7/5022Organic solvents containing oxygen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/423Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/20Cleaning during device manufacture
    • H10P70/23Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/20Cleaning during device manufacture
    • H10P70/27Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
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    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
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    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
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    • C11D7/34Organic compounds containing sulfur
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00Cleaning and liquid contact with solids
    • Y10S134/902Semiconductor wafer

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  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
KR1020047000267A 2001-07-09 2002-07-08 무암모니아 불화염을 포함하는 마이크로일렉트로닉 세정조성물 Expired - Lifetime KR101031926B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US30403301P 2001-07-09 2001-07-09
US60/304,033 2001-07-09
PCT/US2002/021436 WO2003006599A1 (en) 2001-07-09 2002-07-08 Microelectronic cleaning compositions containing ammonia-free fluoride salts

Publications (2)

Publication Number Publication Date
KR20040019046A KR20040019046A (ko) 2004-03-04
KR101031926B1 true KR101031926B1 (ko) 2011-04-29

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KR1020047000267A Expired - Lifetime KR101031926B1 (ko) 2001-07-09 2002-07-08 무암모니아 불화염을 포함하는 마이크로일렉트로닉 세정조성물

Country Status (21)

Country Link
US (2) US7247208B2 (https=)
EP (1) EP1404795B1 (https=)
JP (1) JP4188232B2 (https=)
KR (1) KR101031926B1 (https=)
CN (1) CN100513545C (https=)
AT (1) ATE487785T1 (https=)
AU (1) AU2002316588A1 (https=)
BR (1) BR0210895A (https=)
CA (1) CA2452921C (https=)
DE (1) DE60238258D1 (https=)
DK (1) DK1404795T3 (https=)
ES (1) ES2358256T3 (https=)
IL (2) IL159760A0 (https=)
MY (1) MY143399A (https=)
NO (1) NO20040070L (https=)
PL (1) PL199393B1 (https=)
PT (1) PT1404795E (https=)
RS (1) RS51684B (https=)
TW (1) TWI281944B (https=)
WO (1) WO2003006599A1 (https=)
ZA (1) ZA200400065B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
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KR20160112500A (ko) * 2015-03-19 2016-09-28 동우 화인켐 주식회사 포토레지스트 제거용 세정액 조성물
KR20210082233A (ko) * 2019-01-15 2021-07-02 쇼와 덴코 가부시키가이샤 분해세정 조성물, 접착성 폴리머의 세정 방법, 및 디바이스 웨이퍼의 제조 방법

Families Citing this family (54)

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US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
US7348300B2 (en) * 1999-05-04 2008-03-25 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
CN100442449C (zh) * 2003-05-02 2008-12-10 Ekc技术公司 半导体工艺中后蚀刻残留物的去除
CN1938412A (zh) * 2003-12-02 2007-03-28 高级技术材料公司 剥离抗蚀剂、barc和填隙材料的化学制剂及方法
SG150508A1 (en) 2004-02-11 2009-03-30 Mallinckrodt Baker Inc Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof
US8030263B2 (en) * 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
KR100606187B1 (ko) * 2004-07-14 2006-08-01 테크노세미켐 주식회사 반도체 기판 세정용 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법
JP4463054B2 (ja) * 2004-09-17 2010-05-12 東京応化工業株式会社 ホトレジスト用剥離液およびこれを用いた基板の処理方法
KR20060064441A (ko) * 2004-12-08 2006-06-13 말린크로트 베이커, 인코포레이티드 비수성 비부식성 마이크로전자 세정 조성물
US7922823B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
KR20060108436A (ko) * 2005-04-13 2006-10-18 매그나칩 반도체 유한회사 반도체 소자 세정용 조성물 및 이를 이용한 반도체 소자의세정 방법
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