KR101027170B1 - 차동 감지 방식을 이용하여 저 전압으로 프로그램 가능한ｅＦＵＳＥ - Google Patents

차동 감지 방식을 이용하여 저 전압으로 프로그램 가능한ｅＦＵＳＥ Download PDF

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Publication number
KR101027170B1
KR101027170B1 KR1020077004182A KR20077004182A KR101027170B1 KR 101027170 B1 KR101027170 B1 KR 101027170B1 KR 1020077004182 A KR1020077004182 A KR 1020077004182A KR 20077004182 A KR20077004182 A KR 20077004182A KR 101027170 B1 KR101027170 B1 KR 101027170B1
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South Korea
Prior art keywords
fuse
programming
voltage
transistor
sensing
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020077004182A
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English (en)
Korean (ko)
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KR20070047788A (ko
Inventor
마이클 알 오엘레트
래리 위즐
Original Assignee
인터내셔널 비지네스 머신즈 코포레이션
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Publication of KR20070047788A publication Critical patent/KR20070047788A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H37/00—Thermally-actuated switches
    • H01H37/74—Switches in which only the opening movement or only the closing movement of a contact is effected by heating or cooling
    • H01H37/76—Contact member actuated by melting of fusible material, actuated due to burning of combustible material or due to explosion of explosive material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
    • H01H85/046—Fuses formed as printed circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
KR1020077004182A 2004-09-01 2005-09-01 차동 감지 방식을 이용하여 저 전압으로 프로그램 가능한ｅＦＵＳＥ Expired - Fee Related KR101027170B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/711,205 US7098721B2 (en) 2004-09-01 2004-09-01 Low voltage programmable eFuse with differential sensing scheme
US10/711,205 2004-09-01

Publications (2)

Publication Number Publication Date
KR20070047788A KR20070047788A (ko) 2007-05-07
KR101027170B1 true KR101027170B1 (ko) 2011-04-05

Family

ID=35942242

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077004182A Expired - Fee Related KR101027170B1 (ko) 2004-09-01 2005-09-01 차동 감지 방식을 이용하여 저 전압으로 프로그램 가능한ｅＦＵＳＥ

Country Status (8)

Country Link
US (1) US7098721B2 (https=)
EP (1) EP1800323B1 (https=)
JP (1) JP4833214B2 (https=)
KR (1) KR101027170B1 (https=)
CN (1) CN101010762B (https=)
AT (1) ATE534132T1 (https=)
TW (1) TWI392076B (https=)
WO (1) WO2006028946A2 (https=)

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US7254078B1 (en) 2006-02-22 2007-08-07 International Business Machines Corporation System and method for increasing reliability of electrical fuse programming
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US7345943B2 (en) * 2006-06-28 2008-03-18 International Business Machines Corporation Unclocked eFUSE circuit
US7307911B1 (en) * 2006-07-27 2007-12-11 International Business Machines Corporation Apparatus and method for improving sensing margin of electrically programmable fuses
US20080062738A1 (en) * 2006-09-08 2008-03-13 Florian Schamberger Storage element and method for operating a storage element
US7345904B1 (en) 2006-10-11 2008-03-18 International Business Machines Corporation Method for programming an electronically programmable semiconductor fuse
US8445362B2 (en) * 2006-10-11 2013-05-21 International Business Machines Corporation Apparatus and method for programming an electronically programmable semiconductor fuse
US7723820B2 (en) 2006-12-28 2010-05-25 International Business Machines Corporation Transistor based antifuse with integrated heating element
US7515498B2 (en) * 2007-02-13 2009-04-07 International Business Machines Corporation Electronic fuse apparatus and methodology including addressable virtual electronic fuses
US7737763B2 (en) * 2007-02-13 2010-06-15 International Business Machines Corporation Virtual electronic fuse apparatus and methodology
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US7732893B2 (en) 2007-03-07 2010-06-08 International Business Machines Corporation Electrical fuse structure for higher post-programming resistance
US7851885B2 (en) 2007-03-07 2010-12-14 International Business Machines Corporation Methods and systems involving electrically programmable fuses
US20080265907A1 (en) * 2007-04-27 2008-10-30 Hermann Wienchol Fuse Sensing Method and Apparatus
US7888771B1 (en) 2007-05-02 2011-02-15 Xilinx, Inc. E-fuse with scalable filament link
US7564295B2 (en) * 2007-06-27 2009-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Automatic bias circuit for sense amplifier
US20090058503A1 (en) * 2007-08-30 2009-03-05 Michael Joseph Genden Method to Bridge a Distance Between eFuse Banks That Contain Encoded Data
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CN106033107B (zh) * 2015-03-19 2019-04-12 中芯国际集成电路制造(上海)有限公司 熔丝的熔断电流的校准方法与电路
US10598703B2 (en) 2015-07-20 2020-03-24 Eaton Intelligent Power Limited Electric fuse current sensing systems and monitoring methods
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US11289298B2 (en) 2018-05-31 2022-03-29 Eaton Intelligent Power Limited Monitoring systems and methods for estimating thermal-mechanical fatigue in an electrical fuse
US11143718B2 (en) 2018-05-31 2021-10-12 Eaton Intelligent Power Limited Monitoring systems and methods for estimating thermal-mechanical fatigue in an electrical fuse
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Also Published As

Publication number Publication date
EP1800323B1 (en) 2011-11-16
WO2006028946A2 (en) 2006-03-16
WO2006028946A3 (en) 2007-02-15
JP2008512065A (ja) 2008-04-17
JP4833214B2 (ja) 2011-12-07
KR20070047788A (ko) 2007-05-07
CN101010762B (zh) 2012-02-29
TW200612543A (en) 2006-04-16
US20060044049A1 (en) 2006-03-02
US7098721B2 (en) 2006-08-29
ATE534132T1 (de) 2011-12-15
CN101010762A (zh) 2007-08-01
EP1800323A4 (en) 2008-11-26
TWI392076B (zh) 2013-04-01
EP1800323A2 (en) 2007-06-27

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