KR101025500B1 - 질화 갈륨계 화합물 반도체 발광 소자 및 그 제조 방법 - Google Patents

질화 갈륨계 화합물 반도체 발광 소자 및 그 제조 방법 Download PDF

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KR101025500B1
KR101025500B1 KR1020097006345A KR20097006345A KR101025500B1 KR 101025500 B1 KR101025500 B1 KR 101025500B1 KR 1020097006345 A KR1020097006345 A KR 1020097006345A KR 20097006345 A KR20097006345 A KR 20097006345A KR 101025500 B1 KR101025500 B1 KR 101025500B1
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layer
type semiconductor
semiconductor layer
gallium nitride
light emitting
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KR20090055607A (ko
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히사유키 미키
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쇼와 덴코 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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KR1020097006345A 2006-12-20 2007-12-20 질화 갈륨계 화합물 반도체 발광 소자 및 그 제조 방법 Active KR101025500B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2006-343059 2006-12-20
JP2006343059 2006-12-20
JP2007074779A JP5072397B2 (ja) 2006-12-20 2007-03-22 窒化ガリウム系化合物半導体発光素子およびその製造方法
JPJP-P-2007-074779 2007-03-22

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KR20090055607A KR20090055607A (ko) 2009-06-02
KR101025500B1 true KR101025500B1 (ko) 2011-04-04

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US (1) US20100059760A1 (https=)
JP (1) JP5072397B2 (https=)
KR (1) KR101025500B1 (https=)
CN (1) CN101573804B (https=)
TW (1) TW200834999A (https=)

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KR100999694B1 (ko) * 2008-09-01 2010-12-08 엘지이노텍 주식회사 발광 소자
JP2010245109A (ja) * 2009-04-01 2010-10-28 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物系半導体素子、及び電極を作製する方法
US8865494B2 (en) * 2010-02-19 2014-10-21 Sharp Kabushiki Kaisha Manufacturing method for compound semiconductor light-emitting element
WO2011118629A1 (ja) * 2010-03-23 2011-09-29 日亜化学工業株式会社 窒化物半導体発光素子
JP5508539B2 (ja) * 2010-09-30 2014-06-04 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP2012094688A (ja) * 2010-10-27 2012-05-17 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
JP5949368B2 (ja) 2012-09-13 2016-07-06 豊田合成株式会社 半導体発光素子とその製造方法
CN103456603B (zh) * 2013-09-05 2016-04-13 大连理工大学 在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜
JP5828568B1 (ja) * 2014-08-29 2015-12-09 株式会社タムラ製作所 半導体素子及びその製造方法
CN105280764A (zh) * 2015-09-18 2016-01-27 厦门市三安光电科技有限公司 一种氮化物发光二极管的制作方法
CN105895760B (zh) * 2016-04-29 2018-12-21 佛山市南海区联合广东新光源产业创新中心 一种基于碳化硅衬底的led照明结构
JP7554385B2 (ja) * 2022-03-11 2024-09-20 日亜化学工業株式会社 発光素子の製造方法

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JP2005529484A (ja) 2002-05-17 2005-09-29 マッコーリー ユニバーシティ ガリウムリッチな窒化ガリウム膜の製造プロセス
JP2005340860A (ja) 2005-08-12 2005-12-08 Toshiba Electronic Engineering Corp 半導体発光素子
JP2006093595A (ja) 2004-09-27 2006-04-06 Oki Electric Ind Co Ltd ショットキー電極の製造方法
JP2007103538A (ja) 2005-09-30 2007-04-19 Toshiba Corp 発光ダイオード及びその製造方法

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US5804834A (en) * 1994-10-28 1998-09-08 Mitsubishi Chemical Corporation Semiconductor device having contact resistance reducing layer
JP3457511B2 (ja) * 1997-07-30 2003-10-20 株式会社東芝 半導体装置及びその製造方法
JP4553470B2 (ja) * 2000-09-13 2010-09-29 独立行政法人産業技術総合研究所 ｐ形ＺｎＯ系酸化物半導体層の成長方法およびそれを用いた半導体発光素子の製法
KR100571818B1 (ko) * 2003-10-08 2006-04-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
US20070126008A1 (en) * 2003-10-14 2007-06-07 Munetaka Watanabe Gallium nitride-based compound semiconductor light-emitting device, positive electrode for the device, light-emitting diode and lamp using the device
WO2005057642A1 (en) * 2003-12-10 2005-06-23 Showa Denko K.K. Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof
KR100580634B1 (ko) * 2003-12-24 2006-05-16 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
KR100831957B1 (ko) * 2004-02-24 2008-05-23 쇼와 덴코 가부시키가이샤 질화갈륨계 화합물 반도체 발광소자
WO2005088740A1 (en) * 2004-03-16 2005-09-22 Showa Denko K.K. Gallium nitride-based compound semiconductor light-emitting device
US8049243B2 (en) * 2004-05-26 2011-11-01 Showa Denko K.K. Gallium nitride-based compound semiconductor light emitting device
US20070243414A1 (en) * 2004-05-26 2007-10-18 Hisayuki Miki Positive Electrode Structure and Gallium Nitride-Based Compound Semiconductor Light-Emitting Device
KR100742986B1 (ko) * 2005-07-21 2007-07-26 (주)더리즈 컴플라이언트 기판을 갖는 질화갈륨계 화합물 반도체 소자의 제조 방법
US7910935B2 (en) * 2005-12-27 2011-03-22 Samsung Electronics Co., Ltd. Group-III nitride-based light emitting device
US7495577B2 (en) * 2006-11-02 2009-02-24 Jen-Yen Yen Multipurpose radio

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Publication number Priority date Publication date Assignee Title
JP2005529484A (ja) 2002-05-17 2005-09-29 マッコーリー ユニバーシティ ガリウムリッチな窒化ガリウム膜の製造プロセス
JP2006093595A (ja) 2004-09-27 2006-04-06 Oki Electric Ind Co Ltd ショットキー電極の製造方法
JP2005340860A (ja) 2005-08-12 2005-12-08 Toshiba Electronic Engineering Corp 半導体発光素子
JP2007103538A (ja) 2005-09-30 2007-04-19 Toshiba Corp 発光ダイオード及びその製造方法

Also Published As

Publication number Publication date
JP2008177514A (ja) 2008-07-31
CN101573804A (zh) 2009-11-04
US20100059760A1 (en) 2010-03-11
CN101573804B (zh) 2011-01-05
JP5072397B2 (ja) 2012-11-14
TWI357670B (https=) 2012-02-01
TW200834999A (en) 2008-08-16
KR20090055607A (ko) 2009-06-02

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