CN101573804B - 氮化镓系化合物半导体发光元件及其制造方法 - Google Patents

氮化镓系化合物半导体发光元件及其制造方法 Download PDF

Info

Publication number
CN101573804B
CN101573804B CN2007800474129A CN200780047412A CN101573804B CN 101573804 B CN101573804 B CN 101573804B CN 2007800474129 A CN2007800474129 A CN 2007800474129A CN 200780047412 A CN200780047412 A CN 200780047412A CN 101573804 B CN101573804 B CN 101573804B
Authority
CN
China
Prior art keywords
layer
type semiconductor
light
gallium nitride
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2007800474129A
Other languages
English (en)
Chinese (zh)
Other versions
CN101573804A (zh
Inventor
三木久幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority claimed from PCT/JP2007/075228 external-priority patent/WO2008075794A1/ja
Publication of CN101573804A publication Critical patent/CN101573804A/zh
Application granted granted Critical
Publication of CN101573804B publication Critical patent/CN101573804B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
CN2007800474129A 2006-12-20 2007-12-20 氮化镓系化合物半导体发光元件及其制造方法 Active CN101573804B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP343059/2006 2006-12-20
JP2006343059 2006-12-20
JP2007074779A JP5072397B2 (ja) 2006-12-20 2007-03-22 窒化ガリウム系化合物半導体発光素子およびその製造方法
JP074779/2007 2007-03-22
PCT/JP2007/075228 WO2008075794A1 (ja) 2006-12-20 2007-12-20 窒化ガリウム系化合物半導体発光素子およびその製造方法

Publications (2)

Publication Number Publication Date
CN101573804A CN101573804A (zh) 2009-11-04
CN101573804B true CN101573804B (zh) 2011-01-05

Family

ID=39704289

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800474129A Active CN101573804B (zh) 2006-12-20 2007-12-20 氮化镓系化合物半导体发光元件及其制造方法

Country Status (5)

Country Link
US (1) US20100059760A1 (https=)
JP (1) JP5072397B2 (https=)
KR (1) KR101025500B1 (https=)
CN (1) CN101573804B (https=)
TW (1) TW200834999A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105895760A (zh) * 2016-04-29 2016-08-24 佛山市南海区联合广东新光源产业创新中心 一种基于碳化硅衬底的led照明结构

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100999694B1 (ko) * 2008-09-01 2010-12-08 엘지이노텍 주식회사 발광 소자
JP2010245109A (ja) * 2009-04-01 2010-10-28 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物系半導体素子、及び電極を作製する方法
US8865494B2 (en) * 2010-02-19 2014-10-21 Sharp Kabushiki Kaisha Manufacturing method for compound semiconductor light-emitting element
WO2011118629A1 (ja) * 2010-03-23 2011-09-29 日亜化学工業株式会社 窒化物半導体発光素子
JP5508539B2 (ja) * 2010-09-30 2014-06-04 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP2012094688A (ja) * 2010-10-27 2012-05-17 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
JP5949368B2 (ja) 2012-09-13 2016-07-06 豊田合成株式会社 半導体発光素子とその製造方法
CN103456603B (zh) * 2013-09-05 2016-04-13 大连理工大学 在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜
JP5828568B1 (ja) * 2014-08-29 2015-12-09 株式会社タムラ製作所 半導体素子及びその製造方法
CN105280764A (zh) * 2015-09-18 2016-01-27 厦门市三安光电科技有限公司 一种氮化物发光二极管的制作方法
JP7554385B2 (ja) * 2022-03-11 2024-09-20 日亜化学工業株式会社 発光素子の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6638846B2 (en) * 2000-09-13 2003-10-28 National Institute Of Advanced Industrial Science And Technology And Rohm Co., Ltd. Method of growing p-type ZnO based oxide semiconductor layer and method of manufacturing semiconductor light emitting device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5804834A (en) * 1994-10-28 1998-09-08 Mitsubishi Chemical Corporation Semiconductor device having contact resistance reducing layer
JP3457511B2 (ja) * 1997-07-30 2003-10-20 株式会社東芝 半導体装置及びその製造方法
AUPS240402A0 (en) * 2002-05-17 2002-06-13 Macquarie Research Limited Gallium nitride
KR100571818B1 (ko) * 2003-10-08 2006-04-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
US20070126008A1 (en) * 2003-10-14 2007-06-07 Munetaka Watanabe Gallium nitride-based compound semiconductor light-emitting device, positive electrode for the device, light-emitting diode and lamp using the device
WO2005057642A1 (en) * 2003-12-10 2005-06-23 Showa Denko K.K. Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof
KR100580634B1 (ko) * 2003-12-24 2006-05-16 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
KR100831957B1 (ko) * 2004-02-24 2008-05-23 쇼와 덴코 가부시키가이샤 질화갈륨계 화합물 반도체 발광소자
WO2005088740A1 (en) * 2004-03-16 2005-09-22 Showa Denko K.K. Gallium nitride-based compound semiconductor light-emitting device
US8049243B2 (en) * 2004-05-26 2011-11-01 Showa Denko K.K. Gallium nitride-based compound semiconductor light emitting device
US20070243414A1 (en) * 2004-05-26 2007-10-18 Hisayuki Miki Positive Electrode Structure and Gallium Nitride-Based Compound Semiconductor Light-Emitting Device
JP2006093595A (ja) * 2004-09-27 2006-04-06 Oki Electric Ind Co Ltd ショットキー電極の製造方法
KR100742986B1 (ko) * 2005-07-21 2007-07-26 (주)더리즈 컴플라이언트 기판을 갖는 질화갈륨계 화합물 반도체 소자의 제조 방법
JP2005340860A (ja) * 2005-08-12 2005-12-08 Toshiba Electronic Engineering Corp 半導体発光素子
JP5010129B2 (ja) * 2005-09-30 2012-08-29 株式会社東芝 発光ダイオード及びその製造方法
US7910935B2 (en) * 2005-12-27 2011-03-22 Samsung Electronics Co., Ltd. Group-III nitride-based light emitting device
US7495577B2 (en) * 2006-11-02 2009-02-24 Jen-Yen Yen Multipurpose radio

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6638846B2 (en) * 2000-09-13 2003-10-28 National Institute Of Advanced Industrial Science And Technology And Rohm Co., Ltd. Method of growing p-type ZnO based oxide semiconductor layer and method of manufacturing semiconductor light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105895760A (zh) * 2016-04-29 2016-08-24 佛山市南海区联合广东新光源产业创新中心 一种基于碳化硅衬底的led照明结构
CN105895760B (zh) * 2016-04-29 2018-12-21 佛山市南海区联合广东新光源产业创新中心 一种基于碳化硅衬底的led照明结构

Also Published As

Publication number Publication date
JP2008177514A (ja) 2008-07-31
CN101573804A (zh) 2009-11-04
US20100059760A1 (en) 2010-03-11
KR101025500B1 (ko) 2011-04-04
JP5072397B2 (ja) 2012-11-14
TWI357670B (https=) 2012-02-01
TW200834999A (en) 2008-08-16
KR20090055607A (ko) 2009-06-02

Similar Documents

Publication Publication Date Title
CN101573804B (zh) 氮化镓系化合物半导体发光元件及其制造方法
TWI413279B (zh) Iii族氮化物半導體發光元件及其製造方法、以及燈
CN101438429B (zh) Ⅲ族氮化物化合物半导体叠层结构体
CN101925979B (zh) Iii族氮化物半导体的制造方法、iii族氮化物半导体发光元件的制造方法
CN102884644B (zh) 氮化物半导体元件的制造方法、氮化物半导体发光元件及发光装置
EP2012372B1 (en) Method for manufacturing gallium nitride compound semiconductor light emitting element
KR101074178B1 (ko) Ⅲ족 질화물 화합물 반도체 발광 소자의 제조 방법, 및 ⅲ족 질화물 화합물 반도체 발광 소자, 및 램프
US8097482B2 (en) Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp
CN101874306A (zh) Ⅲ族氮化物半导体发光元件及其制造方法以及灯
CN101506946B (zh) Ⅲ族氮化物化合物半导体发光元件的制造方法、ⅲ族氮化物化合物半导体发光元件和灯
JP2010003768A (ja) Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
WO2008072681A1 (ja) 化合物半導体発光素子及びその製造方法
WO2007119830A1 (ja) 半導体発光素子、半導体発光素子の製造方法およびランプ
CN102113140A (zh) Ⅲ族氮化物半导体发光元件的制造方法、ⅲ族氮化物半导体发光元件和灯
WO2008075559A1 (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
TW201133557A (en) Method for manufacturing aluminum-containing nitride intermediate layer, method for manufacturing nitride layer, and method for manufacturing nitride semiconductor element
WO2009093683A1 (ja) 化合物半導体発光素子及びその製造方法、化合物半導体発光素子用導電型透光性電極、ランプ、電子機器並びに機械装置
WO2008075679A1 (ja) Ｉｉｉ族窒化物化合物半導体発光素子の製造方法、及びｉｉｉ族窒化物化合物半導体発光素子、並びにランプ
JP2008218740A (ja) 窒化ガリウム系化合物半導体発光素子の製造方法
CN101517759B (zh) Ⅲ族氮化物化合物半导体发光元件的制造方法
JP2007109713A (ja) Ｉｉｉ族窒化物半導体発光素子
US7847314B2 (en) Gallium nitride-based compound semiconductor light-emitting device
WO2008075794A1 (ja) 窒化ガリウム系化合物半導体発光素子およびその製造方法
JP2007288052A (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法
CN101542756A (zh) Ⅲ族氮化物半导体发光元件的制造方法、ⅲ族氮化物半导体发光元件和灯

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: TOYODA GOSEI CO., LTD.

Free format text: FORMER OWNER: SHOWA DENKO K.K.

Effective date: 20130125

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20130125

Address after: Aichi

Patentee after: Toyoda Gosei Co., Ltd.

Address before: Tokyo, Japan, Japan

Patentee before: Showa Denko K. K.