KR101001346B1 - 반도체 소자 제조에서 패턴 변형 및 포토리지스트 오염저감 방법 - Google Patents

반도체 소자 제조에서 패턴 변형 및 포토리지스트 오염저감 방법 Download PDF

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KR101001346B1
KR101001346B1 KR1020057000968A KR20057000968A KR101001346B1 KR 101001346 B1 KR101001346 B1 KR 101001346B1 KR 1020057000968 A KR1020057000968 A KR 1020057000968A KR 20057000968 A KR20057000968 A KR 20057000968A KR 101001346 B1 KR101001346 B1 KR 101001346B1
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South Korea
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layer
amorphous carbon
material layer
capping
hardmask
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Expired - Fee Related
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KR1020057000968A
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Korean (ko)
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KR20050019905A (ko
Inventor
본저더글라스제이.
플래트마리나브이.
양치유
벨스코트에이.
찬달린에이.
피셔필립에이.
라이온즈크리스토퍼에프.
장마크에스.
가오페이-유안
라이트마릴린아이
유루
닥시나-머피스리칸테스와라
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글로벌파운드리즈 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
KR1020057000968A 2002-07-31 2003-07-29 반도체 소자 제조에서 패턴 변형 및 포토리지스트 오염저감 방법 Expired - Fee Related KR101001346B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US40045302P 2002-07-31 2002-07-31
US60/400,453 2002-07-31
US10/334,392 US6764949B2 (en) 2002-07-31 2002-12-30 Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication
US10/334,392 2002-12-30
PCT/US2003/023746 WO2004012246A2 (en) 2002-07-31 2003-07-29 Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication

Publications (2)

Publication Number Publication Date
KR20050019905A KR20050019905A (ko) 2005-03-03
KR101001346B1 true KR101001346B1 (ko) 2010-12-14

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KR1020057000968A Expired - Fee Related KR101001346B1 (ko) 2002-07-31 2003-07-29 반도체 소자 제조에서 패턴 변형 및 포토리지스트 오염저감 방법

Country Status (9)

Country Link
US (1) US6764949B2 (https=)
EP (1) EP1576657B1 (https=)
JP (1) JP4599578B2 (https=)
KR (1) KR101001346B1 (https=)
CN (1) CN100341114C (https=)
AU (1) AU2003254254A1 (https=)
DE (1) DE60330998D1 (https=)
TW (1) TWI307917B (https=)
WO (1) WO2004012246A2 (https=)

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JP2005535119A (ja) 2005-11-17
WO2004012246A2 (en) 2004-02-05
CN1672243A (zh) 2005-09-21
EP1576657A2 (en) 2005-09-21
TW200405414A (en) 2004-04-01
WO2004012246A3 (en) 2004-05-13
JP4599578B2 (ja) 2010-12-15
DE60330998D1 (de) 2010-03-04
TWI307917B (en) 2009-03-21
CN100341114C (zh) 2007-10-03
US20040023475A1 (en) 2004-02-05
EP1576657B1 (en) 2010-01-13
AU2003254254A1 (en) 2004-02-16
KR20050019905A (ko) 2005-03-03
US6764949B2 (en) 2004-07-20

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