JP4599578B2 - 半導体デバイス製造過程におけるパターンの変形とフォトマスクの汚染の抑制方法 - Google Patents

半導体デバイス製造過程におけるパターンの変形とフォトマスクの汚染の抑制方法 Download PDF

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Publication number
JP4599578B2
JP4599578B2 JP2004525039A JP2004525039A JP4599578B2 JP 4599578 B2 JP4599578 B2 JP 4599578B2 JP 2004525039 A JP2004525039 A JP 2004525039A JP 2004525039 A JP2004525039 A JP 2004525039A JP 4599578 B2 JP4599578 B2 JP 4599578B2
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amorphous carbon
layer
hard mask
capping
upper layer
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JP2005535119A5 (https=
JP2005535119A (ja
Inventor
ジェイ． ボンサー ダグラス
ブイ． プラット マリーナ
ユ ヤン チ
エイ． ベル スコット
エイ． チャン ダリン
エイ． フィッシャー フィリップ
エフ． ライアンズ クリストファー
エス． チャン マーク
ガオ ペイ−ユアン
アイ． ライト マリリン
ユー ルー
ダクシナ−マーシー スリカンテスワラ
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2004525039A 2002-07-31 2003-07-29 半導体デバイス製造過程におけるパターンの変形とフォトマスクの汚染の抑制方法 Expired - Fee Related JP4599578B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US40045302P 2002-07-31 2002-07-31
US10/334,392 US6764949B2 (en) 2002-07-31 2002-12-30 Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication
PCT/US2003/023746 WO2004012246A2 (en) 2002-07-31 2003-07-29 Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication

Publications (3)

Publication Number Publication Date
JP2005535119A JP2005535119A (ja) 2005-11-17
JP2005535119A5 JP2005535119A5 (https=) 2006-09-14
JP4599578B2 true JP4599578B2 (ja) 2010-12-15

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JP2004525039A Expired - Fee Related JP4599578B2 (ja) 2002-07-31 2003-07-29 半導体デバイス製造過程におけるパターンの変形とフォトマスクの汚染の抑制方法

Country Status (9)

Country Link
US (1) US6764949B2 (https=)
EP (1) EP1576657B1 (https=)
JP (1) JP4599578B2 (https=)
KR (1) KR101001346B1 (https=)
CN (1) CN100341114C (https=)
AU (1) AU2003254254A1 (https=)
DE (1) DE60330998D1 (https=)
TW (1) TWI307917B (https=)
WO (1) WO2004012246A2 (https=)

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Publication number Publication date
JP2005535119A (ja) 2005-11-17
WO2004012246A2 (en) 2004-02-05
CN1672243A (zh) 2005-09-21
EP1576657A2 (en) 2005-09-21
TW200405414A (en) 2004-04-01
WO2004012246A3 (en) 2004-05-13
DE60330998D1 (de) 2010-03-04
TWI307917B (en) 2009-03-21
CN100341114C (zh) 2007-10-03
US20040023475A1 (en) 2004-02-05
EP1576657B1 (en) 2010-01-13
AU2003254254A1 (en) 2004-02-16
KR20050019905A (ko) 2005-03-03
KR101001346B1 (ko) 2010-12-14
US6764949B2 (en) 2004-07-20

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