KR100999779B1 - 발광소자, 발광소자의 제조방법 및 발광소자 패키지 - Google Patents

발광소자, 발광소자의 제조방법 및 발광소자 패키지 Download PDF

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Publication number
KR100999779B1
KR100999779B1 KR20100009211A KR20100009211A KR100999779B1 KR 100999779 B1 KR100999779 B1 KR 100999779B1 KR 20100009211 A KR20100009211 A KR 20100009211A KR 20100009211 A KR20100009211 A KR 20100009211A KR 100999779 B1 KR100999779 B1 KR 100999779B1
Authority
KR
South Korea
Prior art keywords
light emitting
passivation layer
layer
emitting structure
conductive semiconductor
Prior art date
Application number
KR20100009211A
Other languages
English (en)
Korean (ko)
Inventor
김선경
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR20100009211A priority Critical patent/KR100999779B1/ko
Application granted granted Critical
Publication of KR100999779B1 publication Critical patent/KR100999779B1/ko
Priority to EP11151633.2A priority patent/EP2355190B1/en
Priority to US13/016,217 priority patent/US8071973B2/en
Priority to CN201110036295.4A priority patent/CN102163675B/zh
Priority to US13/241,984 priority patent/US8148734B2/en

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00—Globes; Bowls; Cover glasses
    • F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
    • F21V3/049—Patterns or structured surfaces for diffusing light, e.g. frosted surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00—Globes; Bowls; Cover glasses
    • F21V3/02—Globes; Bowls; Cover glasses characterised by the shape
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
KR20100009211A 2010-02-01 2010-02-01 발광소자, 발광소자의 제조방법 및 발광소자 패키지 KR100999779B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR20100009211A KR100999779B1 (ko) 2010-02-01 2010-02-01 발광소자, 발광소자의 제조방법 및 발광소자 패키지
EP11151633.2A EP2355190B1 (en) 2010-02-01 2011-01-21 Passivated light emitting device
US13/016,217 US8071973B2 (en) 2010-02-01 2011-01-28 Light emitting device having a lateral passivation layer
CN201110036295.4A CN102163675B (zh) 2010-02-01 2011-02-01 发光器件
US13/241,984 US8148734B2 (en) 2010-02-01 2011-09-23 Light emitting device having a lateral passivation layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20100009211A KR100999779B1 (ko) 2010-02-01 2010-02-01 발광소자, 발광소자의 제조방법 및 발광소자 패키지

Publications (1)

Publication Number Publication Date
KR100999779B1 true KR100999779B1 (ko) 2010-12-08

Family

ID=43512609

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20100009211A KR100999779B1 (ko) 2010-02-01 2010-02-01 발광소자, 발광소자의 제조방법 및 발광소자 패키지

Country Status (4)

Country Link
US (2) US8071973B2 (zh)
EP (1) EP2355190B1 (zh)
KR (1) KR100999779B1 (zh)
CN (1) CN102163675B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012123998A1 (en) * 2011-03-15 2012-09-20 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
CN102738248A (zh) * 2011-04-11 2012-10-17 昆山中辰矽晶有限公司 光电组件及其制造方法
KR101916124B1 (ko) * 2011-12-22 2018-11-08 엘지이노텍 주식회사 발광소자, 발광 소자 제조방법 및 발광 소자 패키지

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TWI495120B (zh) * 2011-02-09 2015-08-01 Sino American Silicon Prod Inc 光電元件及其製造方法
JP2012231000A (ja) * 2011-04-26 2012-11-22 Toshiba Corp 半導体発光装置
EP3361517B1 (en) * 2011-09-16 2021-06-23 Seoul Viosys Co., Ltd. Light emitting diode
TWI458122B (zh) * 2011-11-23 2014-10-21 Toshiba Kk 半導體發光元件
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US9887324B2 (en) 2013-09-16 2018-02-06 Lg Innotek Co., Ltd. Light emitting device package
CN103700746B (zh) * 2013-12-10 2017-01-04 西安交通大学 一种发光半导体器件
KR20150086689A (ko) * 2014-01-20 2015-07-29 삼성전자주식회사 반도체 발광소자
JP6185415B2 (ja) * 2014-03-27 2017-08-23 株式会社東芝 半導体発光装置
TWM495624U (zh) * 2014-09-15 2015-02-11 Genesis Photonics Inc 發光元件結構
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US11282981B2 (en) * 2017-11-27 2022-03-22 Seoul Viosys Co., Ltd. Passivation covered light emitting unit stack
US10312414B1 (en) * 2017-12-01 2019-06-04 Innolux Corporation Light emitting unit and display device
CN111710766A (zh) * 2020-06-19 2020-09-25 中国工程物理研究院电子工程研究所 一种具有折射率可调的复合增透膜的可见光led芯片
CN114122222B (zh) * 2021-12-20 2023-04-21 厦门乾照光电股份有限公司 一种复合钝化层及其制作方法、led芯片

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012123998A1 (en) * 2011-03-15 2012-09-20 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
CN103403888A (zh) * 2011-03-15 2013-11-20 株式会社东芝 半导体发光器件及用于制造其的方法
US8941124B2 (en) 2011-03-15 2015-01-27 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
TWI478392B (zh) * 2011-03-15 2015-03-21 Toshiba Kk 半導體發光裝置及其製造方法
KR101530142B1 (ko) * 2011-03-15 2015-06-18 가부시끼가이샤 도시바 반도체 발광 장치 및 그 제조 방법
CN102738248A (zh) * 2011-04-11 2012-10-17 昆山中辰矽晶有限公司 光电组件及其制造方法
KR101916124B1 (ko) * 2011-12-22 2018-11-08 엘지이노텍 주식회사 발광소자, 발광 소자 제조방법 및 발광 소자 패키지

Also Published As

Publication number Publication date
EP2355190A2 (en) 2011-08-10
US8148734B2 (en) 2012-04-03
EP2355190B1 (en) 2019-06-12
US20110186813A1 (en) 2011-08-04
US20120012878A1 (en) 2012-01-19
EP2355190A3 (en) 2014-09-03
CN102163675B (zh) 2015-06-17
CN102163675A (zh) 2011-08-24
US8071973B2 (en) 2011-12-06

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