CN103403888A - 半导体发光器件及用于制造其的方法 - Google Patents
半导体发光器件及用于制造其的方法 Download PDFInfo
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- CN103403888A CN103403888A CN2011800689413A CN201180068941A CN103403888A CN 103403888 A CN103403888 A CN 103403888A CN 2011800689413 A CN2011800689413 A CN 2011800689413A CN 201180068941 A CN201180068941 A CN 201180068941A CN 103403888 A CN103403888 A CN 103403888A
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011056438A JP5603813B2 (ja) | 2011-03-15 | 2011-03-15 | 半導体発光装置及び発光装置 |
JP2011-056438 | 2011-03-15 | ||
PCT/JP2011/005228 WO2012123998A1 (en) | 2011-03-15 | 2011-09-15 | Semiconductor light emitting device and method for manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103403888A true CN103403888A (zh) | 2013-11-20 |
CN103403888B CN103403888B (zh) | 2016-09-14 |
Family
ID=44906298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180068941.3A Active CN103403888B (zh) | 2011-03-15 | 2011-09-15 | 半导体发光器件及其制造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8941124B2 (zh) |
EP (1) | EP2686893B1 (zh) |
JP (1) | JP5603813B2 (zh) |
KR (1) | KR101530142B1 (zh) |
CN (1) | CN103403888B (zh) |
TW (1) | TWI478392B (zh) |
WO (1) | WO2012123998A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106257696A (zh) * | 2015-06-17 | 2016-12-28 | 三星电子株式会社 | 半导体发光装置 |
TWI804742B (zh) * | 2019-06-25 | 2023-06-11 | 中國商蘇州晶湛半導體有限公司 | 發光元件、發光元件的模板及其製備方法 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013232503A (ja) | 2012-04-27 | 2013-11-14 | Toshiba Corp | 半導体発光装置 |
TWI489658B (zh) * | 2012-05-25 | 2015-06-21 | Toshiba Kk | 半導體發光裝置及光源單元 |
JP5368620B1 (ja) * | 2012-11-22 | 2013-12-18 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP2014139999A (ja) * | 2013-01-21 | 2014-07-31 | Toshiba Corp | 半導体発光装置 |
JP6071661B2 (ja) * | 2013-03-11 | 2017-02-01 | 株式会社東芝 | 半導体発光装置 |
JP2014187323A (ja) * | 2013-03-25 | 2014-10-02 | Toshiba Corp | 半導体発光装置 |
JP2015002298A (ja) * | 2013-06-17 | 2015-01-05 | ヘンケルジャパン株式会社 | 発光装置、その製造のための封止フィルム積層体、および発光装置の製造方法 |
WO2015001446A1 (en) * | 2013-07-03 | 2015-01-08 | Koninklijke Philips N.V. | Led with stress-buffer layer under metallization layer |
JP2015079929A (ja) * | 2013-09-11 | 2015-04-23 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP6398611B2 (ja) | 2013-11-07 | 2018-10-03 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
CN104900766B (zh) * | 2014-03-07 | 2018-03-27 | 晶能光电(常州)有限公司 | 一种高压led芯片的制备方法 |
JP2015195332A (ja) | 2014-03-27 | 2015-11-05 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
TWI548117B (zh) * | 2014-03-27 | 2016-09-01 | Toshiba Kk | Semiconductor light emitting device and manufacturing method thereof |
CN105023983A (zh) * | 2014-04-24 | 2015-11-04 | 展晶科技(深圳)有限公司 | 覆晶式半导体发光元件及其制造方法 |
TWI790911B (zh) * | 2014-07-03 | 2023-01-21 | 晶元光電股份有限公司 | 光電元件 |
CN105280759B (zh) * | 2014-07-25 | 2018-12-14 | 晶能光电(常州)有限公司 | 一种晶圆级薄膜倒装led芯片的制备方法 |
JP6384202B2 (ja) * | 2014-08-28 | 2018-09-05 | 日亜化学工業株式会社 | 発光装置の製造方法 |
TW201614870A (en) * | 2014-10-08 | 2016-04-16 | Toshiba Kk | Semiconductor light emitting device and method for manufacturing the same |
US20160104824A1 (en) * | 2014-10-08 | 2016-04-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing the same |
KR102374268B1 (ko) | 2015-09-04 | 2022-03-17 | 삼성전자주식회사 | 발광소자 패키지 |
JP6604786B2 (ja) * | 2015-09-11 | 2019-11-13 | 三星電子株式会社 | 半導体発光装置およびその製造方法 |
EP3367141B1 (en) * | 2015-10-20 | 2020-12-16 | Panasonic Semiconductor Solutions Co., Ltd. | Wavelength conversion element and light-emitting device |
KR20200120370A (ko) * | 2019-04-12 | 2020-10-21 | 삼성전자주식회사 | 디스플레이 장치 및 그의 제조 방법 |
US11804416B2 (en) * | 2020-09-08 | 2023-10-31 | UTAC Headquarters Pte. Ltd. | Semiconductor device and method of forming protective layer around cavity of semiconductor die |
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US20050093008A1 (en) * | 2003-10-31 | 2005-05-05 | Toyoda Gosei Co., Ltd. | Light emitting element and light emitting device |
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CN1947222A (zh) * | 2004-03-05 | 2007-04-11 | 吉尔科有限公司 | 无子底座的倒装芯片发光二极管器件 |
US20090050926A1 (en) * | 2007-08-23 | 2009-02-26 | Toyoda Gosei Co., Ltd. | Light emitting device |
KR100999779B1 (ko) * | 2010-02-01 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
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JP4857596B2 (ja) * | 2004-06-24 | 2012-01-18 | 豊田合成株式会社 | 発光素子の製造方法 |
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JP4799606B2 (ja) | 2008-12-08 | 2011-10-26 | 株式会社東芝 | 光半導体装置及び光半導体装置の製造方法 |
JP4724222B2 (ja) * | 2008-12-12 | 2011-07-13 | 株式会社東芝 | 発光装置の製造方法 |
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JP4686625B2 (ja) | 2009-08-03 | 2011-05-25 | 株式会社東芝 | 半導体発光装置の製造方法 |
JP5534763B2 (ja) | 2009-09-25 | 2014-07-02 | 株式会社東芝 | 半導体発光装置の製造方法及び半導体発光装置 |
JP5378130B2 (ja) | 2009-09-25 | 2013-12-25 | 株式会社東芝 | 半導体発光装置 |
JP2011071272A (ja) | 2009-09-25 | 2011-04-07 | Toshiba Corp | 半導体発光装置及びその製造方法 |
JP5349260B2 (ja) | 2009-11-19 | 2013-11-20 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
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JP5101645B2 (ja) | 2010-02-24 | 2012-12-19 | 株式会社東芝 | 半導体発光装置 |
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JP2011199193A (ja) | 2010-03-23 | 2011-10-06 | Toshiba Corp | 発光装置及びその製造方法 |
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TWI804742B (zh) * | 2019-06-25 | 2023-06-11 | 中國商蘇州晶湛半導體有限公司 | 發光元件、發光元件的模板及其製備方法 |
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JP5603813B2 (ja) | 2014-10-08 |
JP2012195345A (ja) | 2012-10-11 |
US20130334539A1 (en) | 2013-12-19 |
EP2686893B1 (en) | 2019-03-20 |
US8941124B2 (en) | 2015-01-27 |
KR20130117875A (ko) | 2013-10-28 |
TW201238084A (en) | 2012-09-16 |
KR101530142B1 (ko) | 2015-06-18 |
CN103403888B (zh) | 2016-09-14 |
WO2012123998A1 (en) | 2012-09-20 |
TWI478392B (zh) | 2015-03-21 |
EP2686893A1 (en) | 2014-01-22 |
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