KR100993516B1 - 포토레지스트 현상액, 및 그 현상액을 사용한 기판의 제조방법 - Google Patents

포토레지스트 현상액, 및 그 현상액을 사용한 기판의 제조방법 Download PDF

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KR100993516B1
KR100993516B1 KR1020077028816A KR20077028816A KR100993516B1 KR 100993516 B1 KR100993516 B1 KR 100993516B1 KR 1020077028816 A KR1020077028816 A KR 1020077028816A KR 20077028816 A KR20077028816 A KR 20077028816A KR 100993516 B1 KR100993516 B1 KR 100993516B1
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South Korea
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photoresist
mass
developer
group
formula
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KR1020077028816A
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Korean (ko)
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KR20080016843A (ko
Inventor
šœ키치 오마에
세이지 도노
도시아키 오타니
야스타카 나츠카
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가부시끼가이샤 도꾸야마
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020077028816A 2005-06-13 2006-06-13 포토레지스트 현상액, 및 그 현상액을 사용한 기판의 제조방법 Expired - Fee Related KR100993516B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005172952 2005-06-13
JPJP-P-2005-00172952 2005-06-13
JP2005189438 2005-06-29
JPJP-P-2005-00189438 2005-06-29

Publications (2)

Publication Number Publication Date
KR20080016843A KR20080016843A (ko) 2008-02-22
KR100993516B1 true KR100993516B1 (ko) 2010-11-10

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ID=37532260

Family Applications (1)

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KR1020077028816A Expired - Fee Related KR100993516B1 (ko) 2005-06-13 2006-06-13 포토레지스트 현상액, 및 그 현상액을 사용한 기판의 제조방법

Country Status (7)

Country Link
US (1) US8808976B2 (enExample)
JP (1) JP4688874B2 (enExample)
KR (1) KR100993516B1 (enExample)
CN (1) CN101213493B (enExample)
SG (1) SG138212A1 (enExample)
TW (1) TWI391793B (enExample)
WO (1) WO2006134902A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5053592B2 (ja) * 2006-08-10 2012-10-17 関東化学株式会社 ポジ型レジスト処理液組成物及び現像液
CN101657761B (zh) * 2007-05-16 2012-07-04 株式会社德山 光刻胶显影液
JP4853537B2 (ja) * 2009-03-13 2012-01-11 東京エレクトロン株式会社 現像装置、現像方法及び記憶媒体
JP5099054B2 (ja) * 2009-03-13 2012-12-12 東京エレクトロン株式会社 基板処理装置、基板処理方法、塗布、現像装置、塗布、現像方法及び記憶媒体
SG11201500235XA (en) * 2012-07-16 2015-02-27 Basf Se Composition for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices
KR102378341B1 (ko) * 2015-06-11 2022-03-24 주식회사 이엔에프테크놀로지 포토레지스트 현상액
US9612536B2 (en) * 2015-08-31 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Developer for lithography
US20250044686A1 (en) * 2023-08-04 2025-02-06 Samsung Sdi Co., Ltd. Method of forming patterns

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4628023A (en) * 1981-04-10 1986-12-09 Shipley Company Inc. Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant
JP2670711B2 (ja) * 1990-05-29 1997-10-29 富士写真フイルム株式会社 ネガ型感光性樹脂組成物用現像液
JP2589408B2 (ja) 1990-11-30 1997-03-12 東京応化工業株式会社 レジスト用現像液組成物
JP3225599B2 (ja) 1992-06-03 2001-11-05 ジェイエスアール株式会社 ネガ型フォトレジスト膜の現像方法
JPH063549A (ja) 1992-06-22 1994-01-14 Sumitomo Electric Ind Ltd 光導波路及び光ファイバの結合方法
JPH07120935A (ja) 1993-10-25 1995-05-12 Japan Synthetic Rubber Co Ltd 感放射線性組成物用アルカリ性現像液
US6455234B1 (en) 1999-05-04 2002-09-24 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and their use in photoresist developers
JP2002169299A (ja) * 2000-09-21 2002-06-14 Tokuyama Corp フォトレジスト現像液
JP2003167329A (ja) * 2001-09-20 2003-06-13 Mitsubishi Chemicals Corp 平版印刷版の作製方法
JP2003107742A (ja) * 2001-09-27 2003-04-09 Fuji Photo Film Co Ltd 印刷版の製版方法及びそれに用いる現像液
JP2003131396A (ja) * 2001-10-25 2003-05-09 Mitsubishi Chemicals Corp 感光性画像形成材の画像形成方法
JP2004133433A (ja) * 2002-09-20 2004-04-30 Fuji Photo Film Co Ltd 平版印刷版の製版方法
JP2004354402A (ja) * 2003-03-31 2004-12-16 Fuji Photo Film Co Ltd 感熱性平版印刷版用現像液及び平版印刷版の製版方法
JP4440600B2 (ja) 2003-10-31 2010-03-24 Ａｚエレクトロニックマテリアルズ株式会社 厚膜および超厚膜対応化学増幅型感光性樹脂組成物
JP2006154569A (ja) * 2004-11-30 2006-06-15 Tokyo Ohka Kogyo Co Ltd レジストパターンおよび導体パターンの製造方法
CN1828429A (zh) * 2005-02-28 2006-09-06 明德国际仓储贸易(上海)有限公司 显影液组成物

Also Published As

Publication number Publication date
JPWO2006134902A1 (ja) 2009-01-08
TWI391793B (zh) 2013-04-01
KR20080016843A (ko) 2008-02-22
JP4688874B2 (ja) 2011-05-25
US8808976B2 (en) 2014-08-19
WO2006134902A1 (ja) 2006-12-21
TW200715072A (en) 2007-04-16
US20090130606A1 (en) 2009-05-21
SG138212A1 (enExample) 2008-01-28
CN101213493A (zh) 2008-07-02
CN101213493B (zh) 2011-08-24

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