KR100989744B1 - 은 페이스트 조성물, 및 그것을 이용한 도전성 패턴의 형성방법 및 그의 도전성 패턴 - Google Patents

은 페이스트 조성물, 및 그것을 이용한 도전성 패턴의 형성방법 및 그의 도전성 패턴 Download PDF

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Publication number
KR100989744B1
KR100989744B1 KR1020087000864A KR20087000864A KR100989744B1 KR 100989744 B1 KR100989744 B1 KR 100989744B1 KR 1020087000864 A KR1020087000864 A KR 1020087000864A KR 20087000864 A KR20087000864 A KR 20087000864A KR 100989744 B1 KR100989744 B1 KR 100989744B1
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KR
South Korea
Prior art keywords
silver paste
paste composition
group
conductive pattern
pattern
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020087000864A
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English (en)
Korean (ko)
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KR20080026165A (ko
Inventor
마사끼 사사끼
겐지 가또
마사오 아리마
Original Assignee
다이요 잉키 세이조 가부시키가이샤
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Publication of KR20080026165A publication Critical patent/KR20080026165A/ko
Application granted granted Critical
Publication of KR100989744B1 publication Critical patent/KR100989744B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0502—Patterning and lithography
    • H05K2203/0514—Photodevelopable thick film, e.g. conductive or insulating paste

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Conductive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
  • Gas-Filled Discharge Tubes (AREA)
KR1020087000864A 2005-07-13 2006-07-12 은 페이스트 조성물, 및 그것을 이용한 도전성 패턴의 형성방법 및 그의 도전성 패턴 Expired - Lifetime KR100989744B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005204083 2005-07-13
JPJP-P-2005-00204083 2005-07-13

Publications (2)

Publication Number Publication Date
KR20080026165A KR20080026165A (ko) 2008-03-24
KR100989744B1 true KR100989744B1 (ko) 2010-10-26

Family

ID=37637192

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087000864A Expired - Lifetime KR100989744B1 (ko) 2005-07-13 2006-07-12 은 페이스트 조성물, 및 그것을 이용한 도전성 패턴의 형성방법 및 그의 도전성 패턴

Country Status (6)

Country Link
US (1) US7517632B2 (enExample)
JP (1) JP4834665B2 (enExample)
KR (1) KR100989744B1 (enExample)
CN (1) CN101223477B (enExample)
TW (1) TW200720846A (enExample)
WO (1) WO2007007802A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR101277020B1 (ko) 2010-09-30 2013-06-24 다이요 홀딩스 가부시키가이샤 감광성 도전 페이스트

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TW200710572A (en) * 2005-05-31 2007-03-16 Taiyo Ink Mfg Co Ltd Photocuring/thermosetting resin composition, curing/setting product thereof and printed wiring board obtained using the same
US20070178310A1 (en) * 2006-01-31 2007-08-02 Rudyard Istvan Non-woven fibrous materials and electrodes therefrom
JP5210657B2 (ja) * 2007-07-18 2013-06-12 太陽ホールディングス株式会社 感光性組成物、及びその焼成物からなるパターン
KR100861399B1 (ko) * 2007-12-17 2008-10-02 주식회사 잉크테크 은 나노입자 분산 수지의 제조 방법
CN101471215B (zh) 2007-12-29 2011-11-09 清华大学 热电子源的制备方法
US20100006146A1 (en) * 2008-07-08 2010-01-14 Palo Alto Research Center Incorporated Wafer-Specific Line Patterning For Solar Cells And The Like
JP5236557B2 (ja) * 2009-03-31 2013-07-17 太陽ホールディングス株式会社 レーザーを用いたパターン形成方法
JP5399193B2 (ja) * 2009-09-30 2014-01-29 太陽ホールディングス株式会社 感光性導電ペーストおよびその製造方法
KR20130016192A (ko) * 2010-03-18 2013-02-14 도레이 카부시키가이샤 감광성 도전 페이스트 및 도전 패턴의 제조방법
WO2012124438A1 (ja) * 2011-03-14 2012-09-20 東レ株式会社 感光性導電ペーストおよび導電パターンの製造方法
CN103582916B (zh) * 2011-04-07 2016-06-01 Lg化学株式会社 用于形成电极的银浆料组合物及其制备方法
KR20130066929A (ko) 2011-12-13 2013-06-21 한국전자통신연구원 패턴 형성 조성물 및 이를 이용한 패턴 형성 방법
KR101350960B1 (ko) * 2012-01-13 2014-01-16 한화케미칼 주식회사 글래스 프릿, 이를 포함하는 도전성 페이스트 조성물 및 태양전지
CN104204946A (zh) * 2012-03-22 2014-12-10 东丽株式会社 感光性导电浆料和导电图案的制造方法
TWI550643B (zh) 2012-03-30 2016-09-21 Taiyo Holdings Co Ltd Conductive paste and conductive circuit
JP6146414B2 (ja) * 2012-07-11 2017-06-14 日油株式会社 銀含有組成物及び銀要素形成基材
JP6061697B2 (ja) * 2013-01-24 2017-01-18 株式会社日本化学工業所 新規な光重合開始剤及びその使用方法
CN103969951A (zh) * 2013-01-30 2014-08-06 太阳油墨制造株式会社 导电性树脂组合物及导电电路
KR20160122694A (ko) * 2014-02-12 2016-10-24 도레이 카부시키가이샤 도전 페이스트, 패턴의 제조 방법, 도전 패턴의 제조 방법 및 센서
WO2017002319A1 (ja) * 2015-06-30 2017-01-05 パナソニックＩｐマネジメント株式会社 硬化性組成物、プリプレグ、組成物付き金属箔、金属張積層板、及び配線板
JP6635415B2 (ja) * 2015-06-30 2020-01-22 パナソニックＩｐマネジメント株式会社 硬化性組成物、プリプレグ、組成物付き金属箔、金属張積層板、及び配線板

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101277020B1 (ko) 2010-09-30 2013-06-24 다이요 홀딩스 가부시키가이샤 감광성 도전 페이스트

Also Published As

Publication number Publication date
CN101223477A (zh) 2008-07-16
US7517632B2 (en) 2009-04-14
US20080118865A1 (en) 2008-05-22
WO2007007802A1 (ja) 2007-01-18
CN101223477B (zh) 2011-08-31
TW200720846A (en) 2007-06-01
KR20080026165A (ko) 2008-03-24
JPWO2007007802A1 (ja) 2009-01-29
TWI326005B (enExample) 2010-06-11
JP4834665B2 (ja) 2011-12-14

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