KR100989220B1 - 진공 처리 장치, 진공 처리 방법 및 기억 매체 - Google Patents

진공 처리 장치, 진공 처리 방법 및 기억 매체 Download PDF

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Publication number
KR100989220B1
KR100989220B1 KR1020080061848A KR20080061848A KR100989220B1 KR 100989220 B1 KR100989220 B1 KR 100989220B1 KR 1020080061848 A KR1020080061848 A KR 1020080061848A KR 20080061848 A KR20080061848 A KR 20080061848A KR 100989220 B1 KR100989220 B1 KR 100989220B1
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KR
South Korea
Prior art keywords
exhaust
pressure
opening degree
vacuum
valve
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KR1020080061848A
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English (en)
Korean (ko)
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KR20090004596A (ko
Inventor
노보루 하야카와
신고 데구치
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도쿄엘렉트론가부시키가이샤
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Publication of KR20090004596A publication Critical patent/KR20090004596A/ko
Application granted granted Critical
Publication of KR100989220B1 publication Critical patent/KR100989220B1/ko

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020080061848A 2007-06-29 2008-06-27 진공 처리 장치, 진공 처리 방법 및 기억 매체 KR100989220B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007173063A JP5322254B2 (ja) 2007-06-29 2007-06-29 真空処理装置及び真空処理方法並びに記憶媒体
JPJP-P-2007-00173063 2007-06-29

Publications (2)

Publication Number Publication Date
KR20090004596A KR20090004596A (ko) 2009-01-12
KR100989220B1 true KR100989220B1 (ko) 2010-10-20

Family

ID=40213925

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080061848A KR100989220B1 (ko) 2007-06-29 2008-06-27 진공 처리 장치, 진공 처리 방법 및 기억 매체

Country Status (4)

Country Link
JP (1) JP5322254B2 (ja)
KR (1) KR100989220B1 (ja)
CN (1) CN101339897B (ja)
TW (1) TWI434344B (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5257328B2 (ja) * 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
US9540731B2 (en) * 2009-12-04 2017-01-10 Applied Materials, Inc. Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
WO2013106949A1 (zh) * 2012-01-18 2013-07-25 清华大学 用于内部稀薄气流模拟验证及压力检测的变结构真空腔室
JP6080506B2 (ja) * 2012-11-07 2017-02-15 東京エレクトロン株式会社 真空装置、その圧力制御方法及びエッチング方法
JP6063803B2 (ja) * 2013-04-15 2017-01-18 東京エレクトロン株式会社 真空装置及びバルブ制御方法
CN103776602B (zh) * 2013-12-27 2016-08-17 合肥京东方光电科技有限公司 一种真空对盒系统的检测装置
JP6638576B2 (ja) * 2016-06-27 2020-01-29 東京エレクトロン株式会社 真空処理装置及び真空処理方法並びに記憶媒体
JP6828446B2 (ja) * 2017-01-12 2021-02-10 株式会社島津製作所 バルブ制御装置
JP6392492B1 (ja) * 2017-04-20 2018-09-19 株式会社ブイテックス 真空容器内圧力マルチ制御装置及び真空容器内圧力マルチ制御方法
WO2020059113A1 (ja) * 2018-09-21 2020-03-26 本田技研工業株式会社 ダイカスト用鋳造金型およびその減圧路コンダクタンス設定方法
US20200176232A1 (en) * 2018-12-04 2020-06-04 Nanya Technology Corporation Etching device and operating method thereof
JP7479207B2 (ja) * 2020-06-09 2024-05-08 東京エレクトロン株式会社 エッチング方法及び基板処理装置
EP4283661A1 (en) * 2021-01-25 2023-11-29 Kokusai Electric Corporation Substrate treatment apparatus, production method for semiconductor device, pressure control device, and substrate treatment program

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010025035A (ko) * 1998-05-20 2001-03-26 마에다 시게루 진공배기장치 및 방법
JP2002316035A (ja) 2001-04-18 2002-10-29 Matsushita Electric Ind Co Ltd 真空処理装置及び方法、半導体、液晶基板の製造方法
JP2003017478A (ja) 2001-07-05 2003-01-17 Tokyo Electron Ltd 真空処理装置および真空処理方法
KR20070026241A (ko) * 2005-09-02 2007-03-08 동경 엘렉트론 주식회사 진공처리장치, 진공 예비실의 배기방법 및 진공 예비실의승압방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03148117A (ja) * 1989-11-02 1991-06-24 Nec Corp ドライエッチング装置
EP0821395A3 (en) * 1996-07-19 1998-03-25 Tokyo Electron Limited Plasma processing apparatus
JP2001257164A (ja) * 2000-03-10 2001-09-21 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び圧力制御方法
US6711956B2 (en) * 2001-10-31 2004-03-30 Macronix International Co., Ltd. Method and apparatus for regulating exhaust pressure in evacuation system of semiconductor process chamber
CN1198319C (zh) * 2001-11-19 2005-04-20 旺宏电子股份有限公司 调整半导体反应室真空系统的排气压力的装置及方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010025035A (ko) * 1998-05-20 2001-03-26 마에다 시게루 진공배기장치 및 방법
JP2002316035A (ja) 2001-04-18 2002-10-29 Matsushita Electric Ind Co Ltd 真空処理装置及び方法、半導体、液晶基板の製造方法
JP2003017478A (ja) 2001-07-05 2003-01-17 Tokyo Electron Ltd 真空処理装置および真空処理方法
KR20070026241A (ko) * 2005-09-02 2007-03-08 동경 엘렉트론 주식회사 진공처리장치, 진공 예비실의 배기방법 및 진공 예비실의승압방법

Also Published As

Publication number Publication date
TWI434344B (zh) 2014-04-11
KR20090004596A (ko) 2009-01-12
JP5322254B2 (ja) 2013-10-23
CN101339897B (zh) 2012-04-18
CN101339897A (zh) 2009-01-07
TW200908143A (en) 2009-02-16
JP2009016382A (ja) 2009-01-22

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