CN101339897B - 真空处理装置和真空处理方法 - Google Patents

真空处理装置和真空处理方法 Download PDF

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Publication number
CN101339897B
CN101339897B CN200810131931XA CN200810131931A CN101339897B CN 101339897 B CN101339897 B CN 101339897B CN 200810131931X A CN200810131931X A CN 200810131931XA CN 200810131931 A CN200810131931 A CN 200810131931A CN 101339897 B CN101339897 B CN 101339897B
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China
Prior art keywords
pressure
exhaust channel
exhaust
vacuum
container handling
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CN200810131931XA
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English (en)
Chinese (zh)
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CN101339897A (zh
Inventor
早川升
出口新悟
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN101339897A publication Critical patent/CN101339897A/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN200810131931XA 2007-06-29 2008-06-27 真空处理装置和真空处理方法 Active CN101339897B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007173063 2007-06-29
JP2007-173063 2007-06-29
JP2007173063A JP5322254B2 (ja) 2007-06-29 2007-06-29 真空処理装置及び真空処理方法並びに記憶媒体

Publications (2)

Publication Number Publication Date
CN101339897A CN101339897A (zh) 2009-01-07
CN101339897B true CN101339897B (zh) 2012-04-18

Family

ID=40213925

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810131931XA Active CN101339897B (zh) 2007-06-29 2008-06-27 真空处理装置和真空处理方法

Country Status (4)

Country Link
JP (1) JP5322254B2 (ja)
KR (1) KR100989220B1 (ja)
CN (1) CN101339897B (ja)
TW (1) TWI434344B (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5257328B2 (ja) * 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
US9540731B2 (en) * 2009-12-04 2017-01-10 Applied Materials, Inc. Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
WO2013106949A1 (zh) * 2012-01-18 2013-07-25 清华大学 用于内部稀薄气流模拟验证及压力检测的变结构真空腔室
JP6080506B2 (ja) * 2012-11-07 2017-02-15 東京エレクトロン株式会社 真空装置、その圧力制御方法及びエッチング方法
JP6063803B2 (ja) * 2013-04-15 2017-01-18 東京エレクトロン株式会社 真空装置及びバルブ制御方法
CN103776602B (zh) * 2013-12-27 2016-08-17 合肥京东方光电科技有限公司 一种真空对盒系统的检测装置
JP6638576B2 (ja) * 2016-06-27 2020-01-29 東京エレクトロン株式会社 真空処理装置及び真空処理方法並びに記憶媒体
JP6828446B2 (ja) * 2017-01-12 2021-02-10 株式会社島津製作所 バルブ制御装置
JP6392492B1 (ja) * 2017-04-20 2018-09-19 株式会社ブイテックス 真空容器内圧力マルチ制御装置及び真空容器内圧力マルチ制御方法
WO2020059113A1 (ja) * 2018-09-21 2020-03-26 本田技研工業株式会社 ダイカスト用鋳造金型およびその減圧路コンダクタンス設定方法
US20200176232A1 (en) * 2018-12-04 2020-06-04 Nanya Technology Corporation Etching device and operating method thereof
JP7479207B2 (ja) * 2020-06-09 2024-05-08 東京エレクトロン株式会社 エッチング方法及び基板処理装置
EP4283661A1 (en) * 2021-01-25 2023-11-29 Kokusai Electric Corporation Substrate treatment apparatus, production method for semiconductor device, pressure control device, and substrate treatment program

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6156151A (en) * 1996-07-19 2000-12-05 Tokyo Electron Limited Plasma processing apparatus
US6711956B2 (en) * 2001-10-31 2004-03-30 Macronix International Co., Ltd. Method and apparatus for regulating exhaust pressure in evacuation system of semiconductor process chamber
CN1198319C (zh) * 2001-11-19 2005-04-20 旺宏电子股份有限公司 调整半导体反应室真空系统的排气压力的装置及方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03148117A (ja) * 1989-11-02 1991-06-24 Nec Corp ドライエッチング装置
JP3929185B2 (ja) * 1998-05-20 2007-06-13 株式会社荏原製作所 真空排気装置及び方法
JP2001257164A (ja) * 2000-03-10 2001-09-21 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び圧力制御方法
JP2002316035A (ja) 2001-04-18 2002-10-29 Matsushita Electric Ind Co Ltd 真空処理装置及び方法、半導体、液晶基板の製造方法
JP2003017478A (ja) 2001-07-05 2003-01-17 Tokyo Electron Ltd 真空処理装置および真空処理方法
JP5078243B2 (ja) * 2005-09-02 2012-11-21 東京エレクトロン株式会社 真空処理装置および真空予備室の排気方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6156151A (en) * 1996-07-19 2000-12-05 Tokyo Electron Limited Plasma processing apparatus
US6711956B2 (en) * 2001-10-31 2004-03-30 Macronix International Co., Ltd. Method and apparatus for regulating exhaust pressure in evacuation system of semiconductor process chamber
CN1198319C (zh) * 2001-11-19 2005-04-20 旺宏电子股份有限公司 调整半导体反应室真空系统的排气压力的装置及方法

Also Published As

Publication number Publication date
KR100989220B1 (ko) 2010-10-20
TWI434344B (zh) 2014-04-11
KR20090004596A (ko) 2009-01-12
JP5322254B2 (ja) 2013-10-23
CN101339897A (zh) 2009-01-07
TW200908143A (en) 2009-02-16
JP2009016382A (ja) 2009-01-22

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