KR100951364B1 - 포토레지스트 제거용 씬너 조성물 - Google Patents

포토레지스트 제거용 씬너 조성물 Download PDF

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Publication number
KR100951364B1
KR100951364B1 KR1020030035683A KR20030035683A KR100951364B1 KR 100951364 B1 KR100951364 B1 KR 100951364B1 KR 1020030035683 A KR1020030035683 A KR 1020030035683A KR 20030035683 A KR20030035683 A KR 20030035683A KR 100951364 B1 KR100951364 B1 KR 100951364B1
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KR
South Korea
Prior art keywords
weight
parts
thinner composition
propylene glycol
ethanoate
Prior art date
Application number
KR1020030035683A
Other languages
English (en)
Korean (ko)
Other versions
KR20040104161A (ko
Inventor
윤석일
전우식
박희진
Original Assignee
주식회사 동진쎄미켐
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동진쎄미켐 filed Critical 주식회사 동진쎄미켐
Priority to KR1020030035683A priority Critical patent/KR100951364B1/ko
Priority to CN200480015004A priority patent/CN100578367C/zh
Priority to JP2006508529A priority patent/JP4512092B2/ja
Priority to PCT/KR2004/001168 priority patent/WO2004107057A1/en
Priority to TW093114977A priority patent/TWI309757B/zh
Publication of KR20040104161A publication Critical patent/KR20040104161A/ko
Application granted granted Critical
Publication of KR100951364B1 publication Critical patent/KR100951364B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020030035683A 2003-06-03 2003-06-03 포토레지스트 제거용 씬너 조성물 KR100951364B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020030035683A KR100951364B1 (ko) 2003-06-03 2003-06-03 포토레지스트 제거용 씬너 조성물
CN200480015004A CN100578367C (zh) 2003-06-03 2004-05-17 用于去除光敏树脂的稀释剂组合物
JP2006508529A JP4512092B2 (ja) 2003-06-03 2004-05-17 感光性樹脂除去用シンナー組成物
PCT/KR2004/001168 WO2004107057A1 (en) 2003-06-03 2004-05-17 Thinner composition for removing photosensitive resin
TW093114977A TWI309757B (en) 2003-06-03 2004-05-26 Thinner composition for removing photosensitive resin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030035683A KR100951364B1 (ko) 2003-06-03 2003-06-03 포토레지스트 제거용 씬너 조성물

Publications (2)

Publication Number Publication Date
KR20040104161A KR20040104161A (ko) 2004-12-10
KR100951364B1 true KR100951364B1 (ko) 2010-04-08

Family

ID=36819234

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030035683A KR100951364B1 (ko) 2003-06-03 2003-06-03 포토레지스트 제거용 씬너 조성물

Country Status (5)

Country Link
JP (1) JP4512092B2 (zh)
KR (1) KR100951364B1 (zh)
CN (1) CN100578367C (zh)
TW (1) TWI309757B (zh)
WO (1) WO2004107057A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4236198B2 (ja) 2004-12-28 2009-03-11 東京応化工業株式会社 リソグラフィー用洗浄液及びそれを用いた半導体基材形成方法
CN1800988B (zh) * 2005-01-06 2010-04-07 新应材股份有限公司 光阻清洗剂
WO2007010881A1 (en) * 2005-07-19 2007-01-25 Showa Denko K.K. Removing solution for photosensitive composition
JP4698515B2 (ja) * 2005-07-19 2011-06-08 昭和電工株式会社 感光性組成物除去液
JP4762867B2 (ja) * 2005-12-02 2011-08-31 東京応化工業株式会社 ホトリソグラフィ用洗浄液およびこれを用いた基板の洗浄方法
JP4643467B2 (ja) * 2006-02-23 2011-03-02 東京応化工業株式会社 リソグラフィー用洗浄液、およびこれを用いた基材の洗浄方法、並びに薬液供給装置の洗浄方法
US8021490B2 (en) 2007-01-04 2011-09-20 Eastman Chemical Company Substrate cleaning processes through the use of solvents and systems
US20120108067A1 (en) * 2010-10-29 2012-05-03 Neisser Mark O Edge Bead Remover For Coatings
KR101886750B1 (ko) * 2011-09-22 2018-08-13 삼성전자 주식회사 Ｒｒｃ 공정용 씨너 조성물과 그의 공급 장치 및 ｅｂｒ 공정용 씨너 조성물
WO2014104192A1 (ja) * 2012-12-27 2014-07-03 富士フイルム株式会社 レジスト除去液およびレジスト剥離方法
KR102492889B1 (ko) * 2014-12-18 2023-01-30 주식회사 동진쎄미켐 신너 조성물

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08137113A (ja) * 1994-11-07 1996-05-31 Nagase Denshi Kagaku Kk フォトレジスト剥離剤組成物
KR20020006831A (ko) * 2000-07-13 2002-01-26 주식회사 동진쎄미켐 박막 트랜지스터 액정표시소자용 포토레지스트를 제거하기위한 씬너 조성물
KR20020037665A (ko) * 2000-11-14 2002-05-22 주식회사 동진쎄미켐 감광성 수지 조성물 제거용 씬너 조성물
KR20020089087A (ko) * 2001-05-23 2002-11-29 주식회사 동진쎄미켐 감광성 수지 조성물 제거용 씬너 조성물

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3246403A1 (de) * 1982-12-15 1984-06-20 Merck Patent Gmbh, 6100 Darmstadt Verfahren zur entwicklung von reliefstrukturen auf der basis von strahlungsvernetzten polymervorstufen hochwaermebestaendiger polymere
JPS6369563A (ja) * 1986-09-12 1988-03-29 Hitachi Ltd 塗布方法および装置
KR100843984B1 (ko) * 2002-02-22 2008-07-07 주식회사 동진쎄미켐 감광성 수지 조성물을 제거하기 위한 씬너 조성물
KR100503967B1 (ko) * 2002-03-29 2005-07-26 주식회사 동진쎄미켐 감광성 수지 제거용 씬너 조성물

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08137113A (ja) * 1994-11-07 1996-05-31 Nagase Denshi Kagaku Kk フォトレジスト剥離剤組成物
KR20020006831A (ko) * 2000-07-13 2002-01-26 주식회사 동진쎄미켐 박막 트랜지스터 액정표시소자용 포토레지스트를 제거하기위한 씬너 조성물
KR20020037665A (ko) * 2000-11-14 2002-05-22 주식회사 동진쎄미켐 감광성 수지 조성물 제거용 씬너 조성물
KR20020089087A (ko) * 2001-05-23 2002-11-29 주식회사 동진쎄미켐 감광성 수지 조성물 제거용 씬너 조성물

Also Published As

Publication number Publication date
JP4512092B2 (ja) 2010-07-28
WO2004107057A1 (en) 2004-12-09
TWI309757B (en) 2009-05-11
JP2007531898A (ja) 2007-11-08
TW200504205A (en) 2005-02-01
CN1799007A (zh) 2006-07-05
KR20040104161A (ko) 2004-12-10
CN100578367C (zh) 2010-01-06

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