KR100925362B1 - 성막 장치, 성막 방법 및 유기 ｅｌ 소자의 제조 방법 - Google Patents

성막 장치, 성막 방법 및 유기 ｅｌ 소자의 제조 방법 Download PDF

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Publication number
KR100925362B1
KR100925362B1 KR1020077016158A KR20077016158A KR100925362B1 KR 100925362 B1 KR100925362 B1 KR 100925362B1 KR 1020077016158 A KR1020077016158 A KR 1020077016158A KR 20077016158 A KR20077016158 A KR 20077016158A KR 100925362 B1 KR100925362 B1 KR 100925362B1
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mask
magnet
substrate
magnetic force
film
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KR20070090018A (ko
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다쓰야 가타오카
겐지 나가오
겐이치 사이토
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미쯔이 죠센 가부시키가이샤
조슈 인더스트리 컴파니 리미티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR1020077016158A 2005-03-24 2006-02-22 성막 장치, 성막 방법 및 유기 ｅｌ 소자의 제조 방법 Expired - Fee Related KR100925362B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005086687A JP4609759B2 (ja) 2005-03-24 2005-03-24 成膜装置
JPJP-P-2005-00086687 2005-03-24

Publications (2)

Publication Number Publication Date
KR20070090018A KR20070090018A (ko) 2007-09-04
KR100925362B1 true KR100925362B1 (ko) 2009-11-09

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JP (1) JP4609759B2 (cg-RX-API-DMAC7.html)
KR (1) KR100925362B1 (cg-RX-API-DMAC7.html)
CN (2) CN101090995A (cg-RX-API-DMAC7.html)
TW (1) TW200637930A (cg-RX-API-DMAC7.html)
WO (1) WO2006100867A1 (cg-RX-API-DMAC7.html)

Cited By (2)

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KR101203171B1 (ko) 2012-05-22 2012-11-21 주식회사 아이.엠.텍 글래스 기판 합착을 위한 얼라인 장치
KR101953038B1 (ko) * 2017-12-13 2019-02-27 캐논 톡키 가부시키가이샤 정전척 장치, 마스크 부착장치, 성막장치, 성막방법, 및 전자 디바이스의 제조 방법

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WO2009084623A1 (ja) * 2007-12-27 2009-07-09 Canon Anelva Corporation 処理装置、並びに電子放出素子及び有機ｅｌディスプレイの生産方法
KR101107181B1 (ko) * 2010-01-04 2012-01-25 삼성모바일디스플레이주식회사 마스크 흡착용 자석 조립체
KR101084185B1 (ko) 2010-01-12 2011-11-17 삼성모바일디스플레이주식회사 패턴 형성 방법 및 유기 발광 소자의 제조방법
TWI475736B (zh) * 2011-07-26 2015-03-01 Innolux Corp 電激發光顯示裝置的製作方法以及鍍膜機台
KR101951029B1 (ko) * 2012-06-13 2019-04-26 삼성디스플레이 주식회사 증착용 마스크 및 이를 이용한 유기 발광 표시장치의 제조방법
KR102000718B1 (ko) * 2012-11-15 2019-07-19 삼성디스플레이 주식회사 박막 증착용 마스크 조립체 및 이의 제조 방법
KR102081282B1 (ko) * 2013-05-27 2020-02-26 삼성디스플레이 주식회사 증착용 기판이동부, 이를 포함하는 증착장치, 이를 이용한 유기발광 디스플레이 장치 제조방법 및 유기발광 디스플레이 장치
KR102270080B1 (ko) * 2013-10-30 2021-06-29 삼성디스플레이 주식회사 박막 증착 장치
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KR102250047B1 (ko) 2014-10-31 2021-05-11 삼성디스플레이 주식회사 마스크 프레임 조립체, 그 제조 방법 및 유기 발광 표시 장치의 제조 방법
KR102280269B1 (ko) 2014-11-05 2021-07-22 삼성디스플레이 주식회사 마스크 프레임 조립체 및 그 제조 방법
US10947616B2 (en) 2015-04-17 2021-03-16 Dai Nippon Printing Co., Ltd. Method for forming vapor deposition pattern, pressing-plate-integrated type pressing member, vapor deposition apparatus, and method for producing organic semiconductor element
KR102404576B1 (ko) 2015-04-24 2022-06-03 삼성디스플레이 주식회사 마스크 프레임 조립체, 그 제조 방법 및 표시 장치의 제조 방법
JP6298138B2 (ja) * 2015-11-25 2018-03-20 キヤノントッキ株式会社 成膜システム、磁性体部及び膜の製造方法
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CN116083856A (zh) * 2023-01-07 2023-05-09 唐山斯腾光电科技有限公司 一种红外窗片加工用蒸发镀膜装置

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KR101203171B1 (ko) 2012-05-22 2012-11-21 주식회사 아이.엠.텍 글래스 기판 합착을 위한 얼라인 장치
KR101953038B1 (ko) * 2017-12-13 2019-02-27 캐논 톡키 가부시키가이샤 정전척 장치, 마스크 부착장치, 성막장치, 성막방법, 및 전자 디바이스의 제조 방법

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