KR100921836B1 - 정전 흡착 전극, 기판 처리 장치 및 정전 흡착 전극의 제조방법 - Google Patents

정전 흡착 전극, 기판 처리 장치 및 정전 흡착 전극의 제조방법 Download PDF

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Publication number
KR100921836B1
KR100921836B1 KR1020070080311A KR20070080311A KR100921836B1 KR 100921836 B1 KR100921836 B1 KR 100921836B1 KR 1020070080311 A KR1020070080311 A KR 1020070080311A KR 20070080311 A KR20070080311 A KR 20070080311A KR 100921836 B1 KR100921836 B1 KR 100921836B1
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KR
South Korea
Prior art keywords
insulating layer
substrate
linear expansion
electrode
expansion coefficient
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KR1020070080311A
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English (en)
Korean (ko)
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KR20080014673A (ko
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요시히코 사사키
마사토 미나미
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도쿄엘렉트론가부시키가이샤
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Publication of KR20080014673A publication Critical patent/KR20080014673A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Drying Of Semiconductors (AREA)
KR1020070080311A 2006-08-10 2007-08-09 정전 흡착 전극, 기판 처리 장치 및 정전 흡착 전극의 제조방법 KR100921836B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00218457 2006-08-10
JP2006218457 2006-08-10
JP2007153792A JP4994121B2 (ja) 2006-08-10 2007-06-11 静電吸着電極、基板処理装置および静電吸着電極の製造方法
JPJP-P-2007-00153792 2007-06-11

Publications (2)

Publication Number Publication Date
KR20080014673A KR20080014673A (ko) 2008-02-14
KR100921836B1 true KR100921836B1 (ko) 2009-10-13

Family

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KR1020070080311A KR100921836B1 (ko) 2006-08-10 2007-08-09 정전 흡착 전극, 기판 처리 장치 및 정전 흡착 전극의 제조방법

Country Status (4)

Country Link
JP (1) JP4994121B2 (zh)
KR (1) KR100921836B1 (zh)
CN (1) CN101188207B (zh)
TW (1) TWI423380B (zh)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI475594B (zh) * 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
JP5025576B2 (ja) * 2008-06-13 2012-09-12 新光電気工業株式会社 静電チャック及び基板温調固定装置
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
JP5612300B2 (ja) * 2009-12-01 2014-10-22 東京エレクトロン株式会社 基板載置台、その製造方法及び基板処理装置
US9048276B2 (en) * 2010-05-28 2015-06-02 Axcelis Technologies, Inc. Matched coefficient of thermal expansion for an electrostatic chuck
JP6010296B2 (ja) * 2010-12-28 2016-10-19 東京エレクトロン株式会社 静電チャック
KR101353157B1 (ko) * 2010-12-28 2014-01-22 도쿄엘렉트론가부시키가이샤 정전 척
JP6296770B2 (ja) * 2013-11-29 2018-03-20 日本特殊陶業株式会社 基板載置装置
CN104752118B (zh) * 2013-12-25 2017-02-15 中微半导体设备(上海)有限公司 等离子体处理腔室及其静电夹盘的制造方法
CN104752119B (zh) * 2013-12-25 2017-08-25 中微半导体设备(上海)有限公司 等离子体处理腔室及其静电夹盘的制造方法
JP6230477B2 (ja) * 2014-04-25 2017-11-15 株式会社ディスコ 切削装置
JP2016065302A (ja) * 2014-09-17 2016-04-28 東京エレクトロン株式会社 プラズマ処理装置用の部品、及び部品の製造方法
CN104576490A (zh) * 2014-12-31 2015-04-29 上海卡贝尼精密陶瓷有限公司 一种静电吸盘及其制造方法
WO2017062134A1 (en) * 2015-10-04 2017-04-13 Applied Materials, Inc. Small thermal mass pressurized chamber
JP2017147278A (ja) * 2016-02-15 2017-08-24 東京エレクトロン株式会社 基板載置台および基板処理装置
KR102632725B1 (ko) * 2016-03-17 2024-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 지지 플레이트 및 이를 포함하는 박막 증착 장치 및 박막 증착 방법
JP6854600B2 (ja) * 2016-07-15 2021-04-07 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、および基板載置台
KR102630782B1 (ko) * 2016-08-19 2024-01-31 삼성전자주식회사 기판 처리 장치
CN110997972B (zh) 2017-07-31 2022-07-26 京瓷株式会社 部件及半导体制造装置
WO2019044850A1 (ja) 2017-09-01 2019-03-07 学校法人 芝浦工業大学 部品および半導体製造装置
JP6967944B2 (ja) * 2017-11-17 2021-11-17 東京エレクトロン株式会社 プラズマ処理装置
JP7140329B2 (ja) 2018-08-10 2022-09-21 地方独立行政法人山口県産業技術センター 陽極酸化チタン材及びその製造方法
JP7241519B2 (ja) 2018-12-04 2023-03-17 東京エレクトロン株式会社 基板載置台、基板処理装置及び基板載置台の製造方法
CN111613563B (zh) * 2019-02-26 2024-02-27 芯恩（青岛）集成电路有限公司 一种静电吸盘及晶圆测试方法
KR102635169B1 (ko) * 2021-04-26 2024-02-13 주식회사 이에스티 코팅 타입 고온 정전척
US20230009692A1 (en) * 2021-07-07 2023-01-12 Applied Materials, Inc Coated substrate support assembly for substrate processing
JP2023056710A (ja) 2021-10-08 2023-04-20 日本碍子株式会社 ウエハ載置台
CN114457300B (zh) * 2022-02-10 2022-12-20 重庆臻宝实业有限公司 一种具有交叉回路下部电极的制备工艺
WO2023163472A1 (ko) * 2022-02-28 2023-08-31 주식회사 이에스티 저온 정전척

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11176919A (ja) * 1997-12-08 1999-07-02 Sony Corp 静電チャック
KR20010105389A (ko) * 1999-04-06 2001-11-28 히가시 데쓰로 전극, 적재대, 플라즈마 처리 장치 및 전극과 적재대의제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3225850B2 (ja) * 1995-09-20 2001-11-05 株式会社日立製作所 静電吸着電極およびその製作方法
JPH09213777A (ja) * 1996-01-31 1997-08-15 Kyocera Corp 静電チャック
JPH11157953A (ja) * 1997-12-02 1999-06-15 Nhk Spring Co Ltd セラミックスと金属との構造体及びそれを用いた静電チャック装置
JPH11168134A (ja) * 1997-12-03 1999-06-22 Shin Etsu Chem Co Ltd 静電吸着装置およびその製造方法
JP2000021962A (ja) * 1998-07-03 2000-01-21 Hitachi Ltd 静電吸着装置
TW541586B (en) * 2001-05-25 2003-07-11 Tokyo Electron Ltd Substrate table, production method therefor and plasma treating device
JP2003060019A (ja) * 2001-08-13 2003-02-28 Hitachi Ltd ウエハステージ
TWI228786B (en) * 2002-04-16 2005-03-01 Anelva Corp Electrostatic chucking stage and substrate processing apparatus
JP2004247387A (ja) * 2003-02-12 2004-09-02 Sumitomo Electric Ind Ltd 半導体製造装置用ウェハ保持体およびそれを搭載した半導体製造装置
JP4421874B2 (ja) * 2003-10-31 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2006049483A (ja) * 2004-08-03 2006-02-16 Canon Inc 静電吸着装置および電子源の製造装置
JP2006060040A (ja) * 2004-08-20 2006-03-02 Rasa Ind Ltd 静電チャックプレート及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11176919A (ja) * 1997-12-08 1999-07-02 Sony Corp 静電チャック
KR20010105389A (ko) * 1999-04-06 2001-11-28 히가시 데쓰로 전극, 적재대, 플라즈마 처리 장치 및 전극과 적재대의제조 방법

Also Published As

Publication number Publication date
TW200826226A (en) 2008-06-16
TWI423380B (zh) 2014-01-11
CN101188207B (zh) 2011-01-12
CN101188207A (zh) 2008-05-28
KR20080014673A (ko) 2008-02-14
JP2008066707A (ja) 2008-03-21
JP4994121B2 (ja) 2012-08-08

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