KR100878543B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR100878543B1
KR100878543B1 KR1020030017737A KR20030017737A KR100878543B1 KR 100878543 B1 KR100878543 B1 KR 100878543B1 KR 1020030017737 A KR1020030017737 A KR 1020030017737A KR 20030017737 A KR20030017737 A KR 20030017737A KR 100878543 B1 KR100878543 B1 KR 100878543B1
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South Korea
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region
layer
diffusion region
impurity diffusion
base substrate
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KR1020030017737A
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English (en)
Korean (ko)
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KR20030082372A (ko
Inventor
아사노유지
가토우모리오
세토야마다카오
후쿠시마도시히코
나츠아키가즈히로
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후지쯔 가부시끼가이샤
샤프 가부시키가이샤
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Publication of KR20030082372A publication Critical patent/KR20030082372A/ko
Application granted granted Critical
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Assigned to 후지쯔 세미컨덕터 가부시키가이샤 reassignment 후지쯔 세미컨덕터 가부시키가이샤 권리지분의 전부이전등록 Assignors: 후지쯔 가부시끼가이샤
Assigned to 샤프 가부시키가이샤 reassignment 샤프 가부시키가이샤 권리지분의 전부이전등록 Assignors: 후지쯔 세미컨덕터 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials

Landscapes

  • Light Receiving Elements (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
KR1020030017737A 2002-03-22 2003-03-21 반도체 장치 Expired - Lifetime KR100878543B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002081041A JP4342142B2 (ja) 2002-03-22 2002-03-22 半導体受光素子
JPJP-P-2002-00081041 2002-03-22

Publications (2)

Publication Number Publication Date
KR20030082372A KR20030082372A (ko) 2003-10-22
KR100878543B1 true KR100878543B1 (ko) 2009-01-14

Family

ID=28449108

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030017737A Expired - Lifetime KR100878543B1 (ko) 2002-03-22 2003-03-21 반도체 장치

Country Status (5)

Country Link
US (1) US6828644B2 (https=)
JP (1) JP4342142B2 (https=)
KR (1) KR100878543B1 (https=)
CN (1) CN1238906C (https=)
TW (1) TW587333B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI244117B (en) * 2003-03-26 2005-11-21 Komatsu Denshi Kinzoku Kk Semiconductor epitaxy wafer
CN100466270C (zh) * 2003-06-30 2009-03-04 罗姆股份有限公司 图像传感器及光电二极管的分离结构的形成方法
KR100555526B1 (ko) * 2003-11-12 2006-03-03 삼성전자주식회사 포토 다이오드 및 그 제조방법
JP4841834B2 (ja) * 2004-12-24 2011-12-21 浜松ホトニクス株式会社 ホトダイオードアレイ
US7307327B2 (en) * 2005-08-04 2007-12-11 Micron Technology, Inc. Reduced crosstalk CMOS image sensors
JP2008066446A (ja) * 2006-09-06 2008-03-21 Sony Corp 半導体積層構造および半導体素子
JP2010103221A (ja) * 2008-10-22 2010-05-06 Panasonic Corp 光半導体装置
EP2202795A1 (en) * 2008-12-24 2010-06-30 S.O.I. TEC Silicon Method for fabricating a semiconductor substrate and semiconductor substrate
DE102011009373B4 (de) * 2011-01-25 2017-08-03 Austriamicrosystems Ag Fotodiodenbauelement
DE102011056369A1 (de) * 2011-12-13 2013-06-13 Pmdtechnologies Gmbh Halbleiterbauelement mit trench gate
US9006833B2 (en) * 2013-07-02 2015-04-14 Texas Instruments Incorporated Bipolar transistor having sinker diffusion under a trench
KR102450562B1 (ko) * 2014-03-13 2022-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
KR102380829B1 (ko) * 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
CN105448945B (zh) 2015-12-29 2019-07-05 同方威视技术股份有限公司 同面电极光电二极管阵列及其制作方法
US10672934B2 (en) * 2017-10-31 2020-06-02 Taiwan Semiconductor Manufacturing Company Ltd. SPAD image sensor and associated fabricating method
US11217718B2 (en) 2019-02-11 2022-01-04 Allegro Microsystems, Llc Photodetector with a buried layer
US11296247B2 (en) * 2019-02-11 2022-04-05 Allegro Microsystems, Llc Photodetector with a buried layer
US12557561B2 (en) 2022-06-16 2026-02-17 Allegro Microsystems, Llc Hall effect device with trench about a micron or greater in depth

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6286756A (ja) * 1985-10-12 1987-04-21 Res Dev Corp Of Japan 光電変換装置
US5500550A (en) * 1989-12-15 1996-03-19 Canon Kabushiki Kaisha Photoelectric converting device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0389550A (ja) 1989-08-31 1991-04-15 Hamamatsu Photonics Kk バイポーラトランジスタの製造方法
JPH0745912A (ja) 1993-07-30 1995-02-14 Sony Corp 半導体レーザ装置
US6054365A (en) * 1998-07-13 2000-04-25 International Rectifier Corp. Process for filling deep trenches with polysilicon and oxide
JP2000156521A (ja) 1998-11-19 2000-06-06 Mitsubishi Electric Corp 半導体装置及び半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6286756A (ja) * 1985-10-12 1987-04-21 Res Dev Corp Of Japan 光電変換装置
US5500550A (en) * 1989-12-15 1996-03-19 Canon Kabushiki Kaisha Photoelectric converting device

Also Published As

Publication number Publication date
TW200305281A (en) 2003-10-16
KR20030082372A (ko) 2003-10-22
CN1238906C (zh) 2006-01-25
TW587333B (en) 2004-05-11
US20030197190A1 (en) 2003-10-23
JP4342142B2 (ja) 2009-10-14
JP2003282848A (ja) 2003-10-03
US6828644B2 (en) 2004-12-07
CN1447445A (zh) 2003-10-08

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