KR100878103B1 - 순차적 증착 및 에칭에 의한 이온화된 ｐｖｄ - Google Patents

순차적 증착 및 에칭에 의한 이온화된 ｐｖｄ Download PDF

Info

Publication number
KR100878103B1
KR100878103B1 KR1020037014325A KR20037014325A KR100878103B1 KR 100878103 B1 KR100878103 B1 KR 100878103B1 KR 1020037014325 A KR1020037014325 A KR 1020037014325A KR 20037014325 A KR20037014325 A KR 20037014325A KR 100878103 B1 KR100878103 B1 KR 100878103B1
Authority
KR
South Korea
Prior art keywords
substrate
etching
deposition
mode
during
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020037014325A
Other languages
English (en)
Korean (ko)
Other versions
KR20030092126A (ko
Inventor
야사터그럴
리놀드즈글린
세리오프랭크
기틀맨브루스
그래퍼하우스마이클
로비슨로드니
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20030092126A publication Critical patent/KR20030092126A/ko
Application granted granted Critical
Publication of KR100878103B1 publication Critical patent/KR100878103B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/358—Inductive energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/262—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0523—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by irradiating with ultraviolet or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020037014325A 2001-05-04 2002-05-03 순차적 증착 및 에칭에 의한 이온화된 ｐｖｄ Expired - Fee Related KR100878103B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US28895201P 2001-05-04 2001-05-04
US60/288,952 2001-05-04
PCT/US2002/014145 WO2002091461A2 (en) 2001-05-04 2002-05-03 Ionized pvd with sequential deposition and etching

Publications (2)

Publication Number Publication Date
KR20030092126A KR20030092126A (ko) 2003-12-03
KR100878103B1 true KR100878103B1 (ko) 2009-01-14

Family

ID=23109372

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037014325A Expired - Fee Related KR100878103B1 (ko) 2001-05-04 2002-05-03 순차적 증착 및 에칭에 의한 이온화된 ｐｖｄ

Country Status (7)

Country Link
US (1) US6755945B2 (https=)
EP (1) EP1384257A2 (https=)
JP (1) JP4429605B2 (https=)
KR (1) KR100878103B1 (https=)
CN (1) CN100355058C (https=)
TW (1) TW552624B (https=)
WO (1) WO2002091461A2 (https=)

Families Citing this family (159)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050272254A1 (en) * 1997-11-26 2005-12-08 Applied Materials, Inc. Method of depositing low resistivity barrier layers for copper interconnects
US8696875B2 (en) 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US7186648B1 (en) 2001-03-13 2007-03-06 Novellus Systems, Inc. Barrier first method for single damascene trench applications
US8043484B1 (en) 2001-03-13 2011-10-25 Novellus Systems, Inc. Methods and apparatus for resputtering process that improves barrier coverage
US7781327B1 (en) 2001-03-13 2010-08-24 Novellus Systems, Inc. Resputtering process for eliminating dielectric damage
US6764940B1 (en) 2001-03-13 2004-07-20 Novellus Systems, Inc. Method for depositing a diffusion barrier for copper interconnect applications
US7744735B2 (en) 2001-05-04 2010-06-29 Tokyo Electron Limited Ionized PVD with sequential deposition and etching
TWI266899B (en) 2002-02-12 2006-11-21 Unaxis Balzers Ltd Component comprising submicron hollow spaces
US7901545B2 (en) * 2004-03-26 2011-03-08 Tokyo Electron Limited Ionized physical vapor deposition (iPVD) process
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US6858521B2 (en) * 2002-12-31 2005-02-22 Samsung Electronics Co., Ltd. Method for fabricating spaced-apart nanostructures
US7012266B2 (en) 2002-08-23 2006-03-14 Samsung Electronics Co., Ltd. MEMS-based two-dimensional e-beam nano lithography device and method for making the same
AU2003304297A1 (en) * 2002-08-23 2005-01-21 Sungho Jin Article comprising gated field emission structures with centralized nanowires and method for making the same
AU2003302019A1 (en) 2002-08-23 2004-06-15 The Regents Of The University Of California Improved microscale vacuum tube device and method for making same
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
US20040087163A1 (en) * 2002-10-30 2004-05-06 Robert Steimle Method for forming magnetic clad bit line
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US20040127014A1 (en) * 2002-12-30 2004-07-01 Cheng-Lin Huang Method of improving a barrier layer in a via or contact opening
US20040140196A1 (en) * 2003-01-17 2004-07-22 Applied Materials, Inc. Shaping features in sputter deposition
US6784105B1 (en) * 2003-04-09 2004-08-31 Infineon Technologies North America Corp. Simultaneous native oxide removal and metal neutral deposition method
US8298933B2 (en) 2003-04-11 2012-10-30 Novellus Systems, Inc. Conformal films on semiconductor substrates
US7842605B1 (en) 2003-04-11 2010-11-30 Novellus Systems, Inc. Atomic layer profiling of diffusion barrier and metal seed layers
US20040211661A1 (en) * 2003-04-23 2004-10-28 Da Zhang Method for plasma deposition of a substrate barrier layer
US6929720B2 (en) 2003-06-09 2005-08-16 Tokyo Electron Limited Sputtering source for ionized physical vapor deposition of metals
JP2005033173A (ja) * 2003-06-16 2005-02-03 Renesas Technology Corp 半導体集積回路装置の製造方法
SE527180C2 (sv) 2003-08-12 2006-01-17 Sandvik Intellectual Property Rakel- eller schaberblad med nötningsbeständigt skikt samt metod för tillverkning därav
US20050061251A1 (en) * 2003-09-02 2005-03-24 Ronghua Wei Apparatus and method for metal plasma immersion ion implantation and metal plasma immersion ion deposition
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US9123508B2 (en) 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
US7892406B2 (en) * 2005-03-28 2011-02-22 Tokyo Electron Limited Ionized physical vapor deposition (iPVD) process
US7700474B2 (en) * 2006-04-07 2010-04-20 Tokyo Electron Limited Barrier deposition using ionized physical vapor deposition (iPVD)
US20090321247A1 (en) * 2004-03-05 2009-12-31 Tokyo Electron Limited IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESS
JP2005285820A (ja) * 2004-03-26 2005-10-13 Ulvac Japan Ltd バイアススパッタ成膜方法及び膜厚制御方法
DE102004015862B4 (de) * 2004-03-31 2006-11-16 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer leitenden Barrierenschicht in kritischen Öffnungen mittels eines abschließenden Abscheideschritts nach einer Rück-Sputter-Abscheidung
US7071095B2 (en) * 2004-05-20 2006-07-04 Taiwan Semiconductor Manufacturing Company Barrier metal re-distribution process for resistivity reduction
US20050266679A1 (en) * 2004-05-26 2005-12-01 Jing-Cheng Lin Barrier structure for semiconductor devices
US7686926B2 (en) * 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
US20050266173A1 (en) * 2004-05-26 2005-12-01 Tokyo Electron Limited Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
US20050263891A1 (en) * 2004-05-28 2005-12-01 Bih-Huey Lee Diffusion barrier for damascene structures
US7556718B2 (en) 2004-06-22 2009-07-07 Tokyo Electron Limited Highly ionized PVD with moving magnetic field envelope for uniform coverage of feature structure and wafer
JP2006093660A (ja) * 2004-08-23 2006-04-06 Konica Minolta Holdings Inc プラズマエッチング法
WO2006025363A1 (ja) * 2004-08-31 2006-03-09 Tokyo Electron Limited シリコン酸化膜の形成方法、半導体装置の製造方法およびコンピュータ記憶媒体
EP1803142A1 (en) * 2004-09-24 2007-07-04 Zond, Inc. Apparatus for generating high-current electrical discharges
JP2006097071A (ja) * 2004-09-29 2006-04-13 Hiroshima Univ 時効性金属材料の硬質化処理方法、硬質化処理装置及び切削工具
DE102004047630A1 (de) * 2004-09-30 2006-04-13 Infineon Technologies Ag Verfahren zur Herstellung eines CBRAM-Halbleiterspeichers
US7214619B2 (en) * 2004-10-05 2007-05-08 Applied Materials, Inc. Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece
US7268076B2 (en) * 2004-10-05 2007-09-11 Applied Materials, Inc. Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
US7399943B2 (en) * 2004-10-05 2008-07-15 Applied Materials, Inc. Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
CN101044259B (zh) * 2004-10-19 2010-07-07 东京毅力科创株式会社 等离子体溅射成膜方法和成膜装置
JP2006148075A (ja) * 2004-10-19 2006-06-08 Tokyo Electron Ltd 成膜方法及びプラズマ成膜装置
JP2006148074A (ja) * 2004-10-19 2006-06-08 Tokyo Electron Ltd 成膜方法及びプラズマ成膜装置
US7256121B2 (en) * 2004-12-02 2007-08-14 Texas Instruments Incorporated Contact resistance reduction by new barrier stack process
US7205187B2 (en) * 2005-01-18 2007-04-17 Tokyo Electron Limited Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor
US7193327B2 (en) * 2005-01-25 2007-03-20 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier structure for semiconductor devices
US7820020B2 (en) * 2005-02-03 2010-10-26 Applied Materials, Inc. Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
US20060278521A1 (en) * 2005-06-14 2006-12-14 Stowell Michael W System and method for controlling ion density and energy using modulated power signals
US20070029193A1 (en) * 2005-08-03 2007-02-08 Tokyo Electron Limited Segmented biased peripheral electrode in plasma processing method and apparatus
US20070068795A1 (en) * 2005-09-26 2007-03-29 Jozef Brcka Hollow body plasma uniformity adjustment device and method
US7700484B2 (en) * 2005-09-30 2010-04-20 Tokyo Electron Limited Method and apparatus for a metallic dry-filling process
US20070074968A1 (en) * 2005-09-30 2007-04-05 Mirko Vukovic ICP source for iPVD for uniform plasma in combination high pressure deposition and low pressure etch process
US7348266B2 (en) * 2005-09-30 2008-03-25 Tokyo Electron Limited Method and apparatus for a metallic dry-filling process
DE102005046976B4 (de) 2005-09-30 2011-12-08 Advanced Micro Devices, Inc. Verfahren zur Herstellung einer Wolframverbindungsstruktur mit verbesserter Seitenwandbedeckung der Barrierenschicht
JP4967354B2 (ja) * 2006-01-31 2012-07-04 東京エレクトロン株式会社 シード膜の成膜方法、プラズマ成膜装置及び記憶媒体
JP5023505B2 (ja) * 2006-02-09 2012-09-12 東京エレクトロン株式会社 成膜方法、プラズマ成膜装置及び記憶媒体
US7837838B2 (en) * 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US20070209930A1 (en) * 2006-03-09 2007-09-13 Applied Materials, Inc. Apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7645710B2 (en) * 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7678710B2 (en) * 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
JP4728153B2 (ja) * 2006-03-20 2011-07-20 富士通セミコンダクター株式会社 半導体装置の製造方法
US7618888B2 (en) * 2006-03-24 2009-11-17 Tokyo Electron Limited Temperature-controlled metallic dry-fill process
US7588667B2 (en) * 2006-04-07 2009-09-15 Tokyo Electron Limited Depositing rhuthenium films using ionized physical vapor deposition (IPVD)
US20070257366A1 (en) * 2006-05-03 2007-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier layer for semiconductor interconnect structure
US7645696B1 (en) 2006-06-22 2010-01-12 Novellus Systems, Inc. Deposition of thin continuous PVD seed layers having improved adhesion to the barrier layer
US7855147B1 (en) * 2006-06-22 2010-12-21 Novellus Systems, Inc. Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer
US20080029386A1 (en) * 2006-08-01 2008-02-07 Dorfman Benjamin F Method and apparatus for trans-zone sputtering
JP4690985B2 (ja) * 2006-09-25 2011-06-01 株式会社東芝 不揮発性記憶装置およびその製造方法
US7776748B2 (en) * 2006-09-29 2010-08-17 Tokyo Electron Limited Selective-redeposition structures for calibrating a plasma process
US7749398B2 (en) * 2006-09-29 2010-07-06 Tokyo Electron Limited Selective-redeposition sources for calibrating a plasma process
US7510634B1 (en) 2006-11-10 2009-03-31 Novellus Systems, Inc. Apparatus and methods for deposition and/or etch selectivity
US8791018B2 (en) * 2006-12-19 2014-07-29 Spansion Llc Method of depositing copper using physical vapor deposition
US7682966B1 (en) 2007-02-01 2010-03-23 Novellus Systems, Inc. Multistep method of depositing metal seed layers
US20080190760A1 (en) * 2007-02-08 2008-08-14 Applied Materials, Inc. Resputtered copper seed layer
US7897516B1 (en) 2007-05-24 2011-03-01 Novellus Systems, Inc. Use of ultra-high magnetic fields in resputter and plasma etching
US7922880B1 (en) 2007-05-24 2011-04-12 Novellus Systems, Inc. Method and apparatus for increasing local plasma density in magnetically confined plasma
DE102007025341B4 (de) * 2007-05-31 2010-11-11 Advanced Micro Devices, Inc., Sunnyvale Verfahren und Abscheidesystem mit Mehrschrittabscheidesteuerung
US20080311711A1 (en) * 2007-06-13 2008-12-18 Roland Hampp Gapfill for metal contacts
US8394197B2 (en) * 2007-07-13 2013-03-12 Sub-One Technology, Inc. Corrosion-resistant internal coating method using a germanium-containing precursor and hollow cathode techniques
WO2009020129A1 (ja) * 2007-08-08 2009-02-12 Ulvac, Inc. プラズマ処理方法及びプラズマ処理装置
US7659197B1 (en) 2007-09-21 2010-02-09 Novellus Systems, Inc. Selective resputtering of metal seed layers
JP5521136B2 (ja) * 2007-10-26 2014-06-11 エリコン・アドヴァンスド・テクノロジーズ・アーゲー ３次元半導体パッケージングにおけるＳｉ貫通ビアのメタライゼーションへのＨＩＰＩＭＳの適用
US8252690B2 (en) * 2008-02-14 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. In situ Cu seed layer formation for improving sidewall coverage
US20090242385A1 (en) * 2008-03-28 2009-10-01 Tokyo Electron Limited Method of depositing metal-containing films by inductively coupled physical vapor deposition
JP5759891B2 (ja) * 2008-04-03 2015-08-05 エリコン アドバンスド テクノロジーズ アーゲー スパッタリング装置および金属化構造体を製造する方法
US8017523B1 (en) 2008-05-16 2011-09-13 Novellus Systems, Inc. Deposition of doped copper seed layers having improved reliability
WO2010004890A1 (ja) 2008-07-11 2010-01-14 キヤノンアネルバ株式会社 薄膜の成膜方法
JP4638550B2 (ja) * 2008-09-29 2011-02-23 東京エレクトロン株式会社 マスクパターンの形成方法、微細パターンの形成方法及び成膜装置
US20100096253A1 (en) * 2008-10-22 2010-04-22 Applied Materials, Inc Pvd cu seed overhang re-sputtering with enhanced cu ionization
SG171398A1 (en) * 2008-12-15 2011-07-28 Ulvac Inc Sputtering apparatus and sputtering method
GB2469666B (en) * 2009-04-23 2012-01-11 Univ Sheffield Hallam RF-plasma glow discharge sputtering
US20110014778A1 (en) * 2009-07-20 2011-01-20 Klepper C Christopher Boron-10 coating process for neutron detector integrated circuit with high aspect ratio trenches
TWI435386B (zh) * 2009-07-21 2014-04-21 愛發科股份有限公司 被膜表面處理方法
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US8846451B2 (en) * 2010-07-30 2014-09-30 Applied Materials, Inc. Methods for depositing metal in high aspect ratio features
JP5392215B2 (ja) * 2010-09-28 2014-01-22 東京エレクトロン株式会社 成膜方法及び成膜装置
CN102036460B (zh) * 2010-12-10 2013-01-02 西安交通大学 平板式等离子体发生装置
TWI490051B (zh) * 2011-02-18 2015-07-01 Kim Mun Hwan 物理氣相沉積之反應室腔體零件之清潔方法
JP5719212B2 (ja) * 2011-03-30 2015-05-13 東京エレクトロン株式会社 成膜方法およびリスパッタ方法、ならびに成膜装置
US20140046475A1 (en) * 2012-08-09 2014-02-13 Applied Materials, Inc. Method and apparatus deposition process synchronization
KR101772309B1 (ko) 2013-06-04 2017-08-28 도쿄엘렉트론가부시키가이샤 자기 정렬 패터닝 에칭에서의 비대칭 프로파일의 완화
US9960021B2 (en) * 2013-12-18 2018-05-01 Applied Materials, Inc. Physical vapor deposition (PVD) target having low friction pads
US9887072B2 (en) * 2014-01-23 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for integrated resputtering in a physical vapor deposition chamber
CN103993294B (zh) * 2014-04-17 2016-08-24 上海和辉光电有限公司 一种高温cvd工艺的压差改良方法
US10163698B2 (en) * 2014-05-07 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Interconnect structure and manufacturing method thereof
US9564359B2 (en) * 2014-07-17 2017-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive structure and method of forming the same
GB201420935D0 (en) * 2014-11-25 2015-01-07 Spts Technologies Ltd Plasma etching apparatus
US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US9978610B2 (en) 2015-08-21 2018-05-22 Lam Research Corporation Pulsing RF power in etch process to enhance tungsten gapfill performance
US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
US10229837B2 (en) 2016-02-04 2019-03-12 Lam Research Corporation Control of directionality in atomic layer etching
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
US9773643B1 (en) * 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10566211B2 (en) 2016-08-30 2020-02-18 Lam Research Corporation Continuous and pulsed RF plasma for etching metals
US9905638B1 (en) * 2016-09-30 2018-02-27 Texas Instruments Incorporated Silicon epitaxy for high aspect ratio, substantially perpendicular deep silicon trench
US10818502B2 (en) 2016-11-21 2020-10-27 Tokyo Electron Limited System and method of plasma discharge ignition to reduce surface particles
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
US10269559B2 (en) * 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US10763083B2 (en) 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
US11664206B2 (en) 2017-11-08 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Arcing protection method and processing tool
KR102487054B1 (ko) * 2017-11-28 2023-01-13 삼성전자주식회사 식각 방법 및 반도체 장치의 제조 방법
JP7177161B6 (ja) * 2018-02-19 2022-12-16 アプライド マテリアルズ インコーポレイテッド 厚膜内の結晶化の開始を停めるためのスパッタエッチングを使用したｐｖｄ二酸化チタン形成
WO2019190781A1 (en) 2018-03-30 2019-10-03 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
JP7203531B2 (ja) * 2018-08-08 2023-01-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US20200048760A1 (en) * 2018-08-13 2020-02-13 Applied Materials, Inc. High power impulse magnetron sputtering physical vapor deposition of tungsten films having improved bottom coverage
US10927450B2 (en) 2018-12-19 2021-02-23 Applied Materials, Inc. Methods and apparatus for patterning substrates using asymmetric physical vapor deposition
KR20240160679A (ko) 2019-05-01 2024-11-11 램 리써치 코포레이션 변조된 원자 층 증착
US12431349B2 (en) 2019-06-07 2025-09-30 Lam Research Corporation In-situ control of film properties during atomic layer deposition
JP7339032B2 (ja) * 2019-06-28 2023-09-05 東京エレクトロン株式会社 基板処理方法および基板処理装置
CN110190020A (zh) * 2019-07-03 2019-08-30 中国振华集团云科电子有限公司 一种刻蚀方法及系统
WO2021025874A1 (en) 2019-08-06 2021-02-11 Lam Research Corporation Thermal atomic layer deposition of silicon-containing films
US20210210355A1 (en) * 2020-01-08 2021-07-08 Tokyo Electron Limited Methods of Plasma Processing Using a Pulsed Electron Beam
WO2021178399A1 (en) 2020-03-06 2021-09-10 Lam Research Corporation Atomic layer etching of molybdenum
US20210391176A1 (en) * 2020-06-16 2021-12-16 Applied Materials, Inc. Overhang reduction using pulsed bias
CN115803474A (zh) 2020-07-23 2023-03-14 朗姆研究公司 具有受控膜性质和高沉积速率的保形热cvd
KR20230043795A (ko) 2020-07-28 2023-03-31 램 리써치 코포레이션 실리콘-함유 막들의 불순물 감소
KR20210059676A (ko) * 2021-05-04 2021-05-25 삼성전자주식회사 반도체 장치 제조 방법
WO2023283144A1 (en) 2021-07-09 2023-01-12 Lam Research Corporation Plasma enhanced atomic layer deposition of silicon-containing films
US12581926B2 (en) * 2021-07-14 2026-03-17 Applied Materials Inc. Methods and apparatus for processing a substrate
US12476105B2 (en) 2023-01-10 2025-11-18 Applied Materials, Inc. Directional selective fill for silicon gap fill processes
CN118782540A (zh) * 2024-06-21 2024-10-15 深圳市矩阵多元科技有限公司 种子层制作方法
DE102024123805A1 (de) * 2024-08-20 2026-02-26 Cemecon Ag. Beschichtung eines nichtleitenden oder gering leitfähigen Substrats

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000007236A2 (en) 1998-07-31 2000-02-10 Applied Materials, Inc. Method and apparatus for forming improved metal interconnects

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4664935A (en) * 1985-09-24 1987-05-12 Machine Technology, Inc. Thin film deposition apparatus and method
JP2602276B2 (ja) * 1987-06-30 1997-04-23 株式会社日立製作所 スパツタリング方法とその装置
US6224724B1 (en) 1995-02-23 2001-05-01 Tokyo Electron Limited Physical vapor processing of a surface with non-uniformity compensation
US6132564A (en) * 1997-11-17 2000-10-17 Tokyo Electron Limited In-situ pre-metallization clean and metallization of semiconductor wafers
US5658438A (en) * 1995-12-19 1997-08-19 Micron Technology, Inc. Sputter deposition method for improved bottom and side wall coverage of high aspect ratio features
US6376781B1 (en) 1996-05-03 2002-04-23 Micron Technology, Inc. Low resistance contacts fabricated in high aspect ratio openings by resputtering
TW358964B (en) * 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US5976327A (en) * 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6100200A (en) * 1998-12-21 2000-08-08 Advanced Technology Materials, Inc. Sputtering process for the conformal deposition of a metallization or insulating layer
US6277249B1 (en) 2000-01-21 2001-08-21 Applied Materials Inc. Integrated process for copper via filling using a magnetron and target producing highly energetic ions

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000007236A2 (en) 1998-07-31 2000-02-10 Applied Materials, Inc. Method and apparatus for forming improved metal interconnects
WO2000007236A3 (en) * 1998-07-31 2000-06-22 Applied Materials Inc Method and apparatus for forming improved metal interconnects

Also Published As

Publication number Publication date
WO2002091461A3 (en) 2003-02-27
US6755945B2 (en) 2004-06-29
JP2004526868A (ja) 2004-09-02
JP4429605B2 (ja) 2010-03-10
KR20030092126A (ko) 2003-12-03
CN1552097A (zh) 2004-12-01
TW552624B (en) 2003-09-11
EP1384257A2 (en) 2004-01-28
WO2002091461A2 (en) 2002-11-14
CN100355058C (zh) 2007-12-12
US20030034244A1 (en) 2003-02-20

Similar Documents

Publication Publication Date Title
KR100878103B1 (ko) 순차적 증착 및 에칭에 의한 이온화된 ｐｖｄ
US7744735B2 (en) Ionized PVD with sequential deposition and etching
JP2004526868A5 (https=)
US6562715B1 (en) Barrier layer structure for copper metallization and method of forming the structure
US6673716B1 (en) Control of the deposition temperature to reduce the via and contact resistance of Ti and TiN deposited using ionized PVD techniques
US7588667B2 (en) Depositing rhuthenium films using ionized physical vapor deposition (IPVD)
US20070238279A1 (en) BARRIER DEPOSITION USING IONIZED PHYSICAL VAPOR DEPOSITION (iPVD)
US7214619B2 (en) Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece
US20060172536A1 (en) Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece
US7399943B2 (en) Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
US6200433B1 (en) IMP technology with heavy gas sputtering
KR20010051943A (ko) 측벽 커버리지를 개선하기 위한ｉｍｐ 스퍼터링프로세스의 교대 방법
US6461483B1 (en) Method and apparatus for performing high pressure physical vapor deposition
US20060014378A1 (en) System and method to form improved seed layer
US6458251B1 (en) Pressure modulation method to obtain improved step coverage of seed layer
US20090321247A1 (en) IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESS
US7892406B2 (en) Ionized physical vapor deposition (iPVD) process
EP0856593A1 (en) A method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US7268076B2 (en) Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
US7642201B2 (en) Sequential tantalum-nitride deposition
EP4174208A1 (en) Pvd method and apparatus
CN120981598A (zh) 用于基板处理腔室的偏压或浮动处理屏蔽件

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20121227

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20131218

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20141230

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20151217

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20170106

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20170106

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000