JP7177161B6 - 厚膜内の結晶化の開始を停めるためのスパッタエッチングを使用したpvd二酸化チタン形成 - Google Patents
厚膜内の結晶化の開始を停めるためのスパッタエッチングを使用したpvd二酸化チタン形成 Download PDFInfo
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- 238000000992 sputter etching Methods 0.000 title claims description 29
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims description 18
- 230000015572 biosynthetic process Effects 0.000 title description 13
- 230000000977 initiatory effect Effects 0.000 title description 6
- 238000002425 crystallisation Methods 0.000 title 1
- 230000008025 crystallization Effects 0.000 title 1
- 239000004408 titanium dioxide Substances 0.000 title 1
- 238000000034 method Methods 0.000 claims description 116
- 238000005240 physical vapour deposition Methods 0.000 claims description 104
- 239000000919 ceramic Substances 0.000 claims description 95
- 239000000758 substrate Substances 0.000 claims description 53
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 21
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 238000007872 degassing Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 description 23
- 239000013078 crystal Substances 0.000 description 11
- 230000006911 nucleation Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- -1 argon ions Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Description
Claims (13)
- 物理的気相堆積(PVD)プロセスを使用して基板上にセラミック層を堆積させることであって、セラミック層が基板の表面全体にわたって配置される、セラミック層を堆積させることと;
セラミック層が所定の層厚を有したらPVDプロセスを停止することであって、所定の層厚が基板の表面全体にわたって実質的に同じである、PVDプロセスを停止することと;
セラミック層を所定の時間にわたってスパッタエッチングすることであって、スパッタエッチングによって基板の表面全体にわたるセラミック層の一部が除去される、スパッタエッチングすることと;
PVDプロセスを使用してセラミック層を堆積させること、PVDプロセスを停止すること、及びセラミック層をスパッタエッチングすることを、基板の表面全体にわたって実質的に同じである所定の膜厚を有するセラミック膜が形成されるまで繰り返すことと
を含む方法であって、
セラミック層及びセラミック膜が、TiO 2 、五酸化タンタル(Ta 2 O 5 )、又はアルミニウム(III)酸化物(Al 2 O 3 )材料を含む、方法。 - PVDプロセスを使用してセラミック層を堆積させることが、PVDチャンバに基板を導入することをさらに含む、請求項1に記載の方法。
- PVDプロセスを停止することが、PVDチャンバから基板を取り出すことをさらに含む、請求項2に記載の方法。
- セラミック層をスパッタエッチングすることが、スパッタエッチングチャンバに基板を導入することをさらに含む、請求項3に記載の方法。
- 放射熱チャンバ内で基板をガス抜きすること;及び
基板をPVDチャンバに最初に導入する前に、スパッタエッチングチャンバ内で基板をスパッタエッチングすること
のうちの少なくとも一つをさらに含む、請求項4に記載の方法。 - セラミック層及びセラミック膜が本質的に二酸化チタン(TiO2)材料からなる、請求項1に記載の方法。
- 所定の層厚が500オングストローム(Å)未満である、請求項6に記載の方法。
- 所定の層厚が400Åである、請求項7に記載の方法。
- 所定の時間が5秒から25秒である、請求項8に記載の方法。
- 所定の膜厚を有するセラミック膜が形成されるまで、PVDプロセスを使用してセラミック層を堆積させること、PVDプロセスを停止すること、及びセラミック層をスパッタエッチングすることが、同じPVDチャンバ内で実施される、請求項1に記載の方法。
- 物理的気相堆積(PVD)チャンバに基板を導入し、PVDプロセスを使用して基板上にセラミック層を堆積させることであって、セラミック層が基板の表面全体にわたって配置される、PVDプロセスを使用してセラミック層を堆積させることと;
セラミック層が所定の層厚を有したらPVDプロセスを停止し、PVDチャンバから基板を取り出すことであって、所定の層厚が基板の表面全体にわたって実質的に同じである、PVDプロセスを停止することと;
スパッタエッチングチャンバに基板を導入し、所定の時間にわたってセラミック層をスパッタエッチングすることであって、スパッタエッチングによって基板の表面全体にわたるセラミック層の一部が除去される、セラミック層をスパッタエッチングすることと;
基板の表面全体にわたって実質的に同じである所定の膜厚を有するセラミック膜が形成されるまで、PVDプロセスを使用してセラミック層を堆積させること、PVDプロセスを停止すること、及びセラミック層をスパッタエッチングすることを繰り返すことと
を含み、
セラミック層及びセラミック膜が、TiO 2 、五酸化タンタル(Ta 2 O 5 )、又はアルミニウム(III)酸化物(Al 2 O 3 )材料を含む、方法。 - 放射熱チャンバ内で基板をガス抜きすること;及び
基板をPVDチャンバに最初に導入する前に、スパッタエッチングチャンバ内で基板をスパッタエッチングすること
のうちの少なくとも一つをさらに含む、請求項11に記載の方法。 - チャンバ本体によって規定されるプロセス空間を含む物理的気相堆積(PVD)チャンバに基板を導入することであって、プロセス空間が:
ターゲットスイッチに接続されたターゲットであって、ターゲットスイッチは係合時、ターゲットにパルスDC電力を提供するように動作可能なDC電源にターゲットを接続する、ターゲット;及び
ペデスタルスイッチに接続された、基板を支持するように動作可能なペデスタルであって、ペデスタルスイッチは係合時、ペデスタルにRF電力を提供するように動作可能なパルス高周波(RF)電源にペデスタルを接続する、ペデスタル
を有する、基板を導入することと;
PVDプロセスを使用して基板上にセラミック層を堆積させることであって、セラミック層は基板の表面全体にわたって配置され、PVDプロセスが:
スパッタガスの第1の流れ及び反応性ガスの流れをプロセス空間に提供すること;及び
ターゲットをDC電源に接続すること
を含む、PVDプロセスを使用してセラミック層を堆積させることと;
セラミック層が所定の層厚を有したらPVDプロセスを停止することであって、所定の層厚が基板の表面全体にわたって実質的に同じである、PVDプロセスを停止することと;
PVDチャンバで所定の時間にわたってセラミック層をスパッタエッチングすることであって、スパッタエッチングによって基板の表面全体にわたるセラミック層の一部が除去され、スパッタエッチングが:
スパッタガスの第2の流れをプロセス空間に提供すること;及び
ペデスタルをRF電源に接続すること
を含む、セラミック層をスパッタエッチングすることと;
基板の表面全体にわたって実質的に同じである所定の膜厚を有するセラミック膜が形成されるまで、PVDプロセスを使用してセラミック層を堆積させること、PVDプロセスを停止すること、及びセラミック層をスパッタエッチングすることを繰り返すことと
を含み、
セラミック層及びセラミック膜が、TiO 2 、五酸化タンタル(Ta 2 O 5 )、又はアルミニウム(III)酸化物(Al 2 O 3 )材料を含む、方法。
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JP2022132286A JP7487267B2 (ja) | 2018-02-19 | 2022-08-23 | 厚膜内の結晶化の開始を停めるためのスパッタエッチングを使用したpvd二酸化チタン形成 |
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PCT/US2019/015416 WO2019160674A1 (en) | 2018-02-19 | 2019-01-28 | Pvd titanium dioxide formation using sputter etch to halt onset of crystalinity in thick films |
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US11008647B2 (en) | 2021-05-18 |
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