KR100856167B1 - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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Publication number
KR100856167B1
KR100856167B1 KR1020020030529A KR20020030529A KR100856167B1 KR 100856167 B1 KR100856167 B1 KR 100856167B1 KR 1020020030529 A KR1020020030529 A KR 1020020030529A KR 20020030529 A KR20020030529 A KR 20020030529A KR 100856167 B1 KR100856167 B1 KR 100856167B1
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KR
South Korea
Prior art keywords
semiconductor device
film
mask
phase shift
pattern
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Expired - Fee Related
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KR1020020030529A
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English (en)
Korean (ko)
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KR20030015824A (ko
Inventor
타나카토시히코
하세가와노리오
테라사와츠네오
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20030015824A publication Critical patent/KR20030015824A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/946—Step and repeat

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020020030529A 2001-08-17 2002-05-31 반도체장치의 제조방법 Expired - Fee Related KR100856167B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00247868 2001-08-17
JP2001247868A JP4053263B2 (ja) 2001-08-17 2001-08-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20030015824A KR20030015824A (ko) 2003-02-25
KR100856167B1 true KR100856167B1 (ko) 2008-09-03

Family

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Family Applications (1)

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KR1020020030529A Expired - Fee Related KR100856167B1 (ko) 2001-08-17 2002-05-31 반도체장치의 제조방법

Country Status (4)

Country Link
US (1) US6645856B2 (enExample)
JP (1) JP4053263B2 (enExample)
KR (1) KR100856167B1 (enExample)
TW (1) TW556277B (enExample)

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TW541605B (en) * 2000-07-07 2003-07-11 Hitachi Ltd Fabrication method of semiconductor integrated circuit device
US6765296B2 (en) * 2002-01-10 2004-07-20 Chartered Semiconductor Manufacturing Ltd. Via-sea layout integrated circuits
US6872646B2 (en) * 2002-06-07 2005-03-29 Dia Nippon Printing Co., Ltd. Method for manufacturing conductive pattern substrate
US7018556B2 (en) * 2003-10-10 2006-03-28 Asml Holding N.V. Method to etch chrome deposited on calcium fluoride object
CN100461424C (zh) * 2003-12-30 2009-02-11 中芯国际集成电路制造(上海)有限公司 半导体集成电路隧道氧化窗口区域设计的结构及方法
US7794897B2 (en) * 2004-03-02 2010-09-14 Kabushiki Kaisha Toshiba Mask pattern correcting method, mask pattern inspecting method, photo mask manufacturing method, and semiconductor device manufacturing method
TW200909999A (en) * 2004-07-09 2009-03-01 Hoya Corp Photomask blank, photomask manufacturing method and semiconductor device manufacturing method
JP5008280B2 (ja) * 2004-11-10 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP5154007B2 (ja) 2004-12-06 2013-02-27 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4794232B2 (ja) * 2004-12-06 2011-10-19 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4926433B2 (ja) * 2004-12-06 2012-05-09 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
KR100745065B1 (ko) * 2004-12-27 2007-08-01 주식회사 하이닉스반도체 위상반전 마스크의 성장성 이물질 제거방법
JP4718894B2 (ja) * 2005-05-19 2011-07-06 株式会社東芝 半導体装置の製造方法
US20070012335A1 (en) * 2005-07-18 2007-01-18 Chang Hsiao C Photomask cleaning using vacuum ultraviolet (VUV) light cleaning
US7755207B2 (en) 2005-07-27 2010-07-13 Ricoh Company, Ltd. Wafer, reticle, and exposure method using the wafer and reticle
JP4761907B2 (ja) * 2005-09-28 2011-08-31 株式会社Sokudo 基板処理装置
KR101477262B1 (ko) * 2005-12-28 2014-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
KR100732769B1 (ko) 2006-01-09 2007-06-27 주식회사 하이닉스반도체 포토마스크 제조방법
JP4791207B2 (ja) * 2006-02-16 2011-10-12 富士通セミコンダクター株式会社 位相シフトレチクルとその製造方法とその欠陥検査方法
JP4900045B2 (ja) * 2007-05-28 2012-03-21 富士通セミコンダクター株式会社 フォトマスクの遮光帯作成方法及び遮光帯データ作成装置
JP5348866B2 (ja) * 2007-09-14 2013-11-20 Ｈｏｙａ株式会社 マスクの製造方法
US9005848B2 (en) * 2008-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
US9005849B2 (en) * 2009-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
JP5360399B2 (ja) * 2009-08-06 2013-12-04 大日本印刷株式会社 回折格子作製用位相マスク
CN110673435B (zh) * 2013-01-15 2023-04-21 Hoya株式会社 掩膜板坯料、相移掩膜板及半导体器件的制造方法
JP5994952B2 (ja) * 2015-02-03 2016-09-21 大日本印刷株式会社 蒸着マスクの製造方法、蒸着マスク製造装置、レーザー用マスクおよび有機半導体素子の製造方法
US10908494B2 (en) * 2017-05-31 2021-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and manufacturing method thereof
US20220214611A1 (en) * 2019-04-16 2022-07-07 Shin-Etsu Chemical Co., Ltd. Pellicle, Exposure Original Plate with Pellicle, Method for Producing Semiconductor Device, Method for Producing Liquid Crystal Display Board, Method for Regenerating Exposure Original Plate, and Peeling Residue Reduction Method
JP2020179408A (ja) * 2019-04-25 2020-11-05 イビデン株式会社 エキシマレーザーによる加工方法
KR102473558B1 (ko) * 2019-10-23 2022-12-05 주식회사 에스앤에스텍 극자외선 리소그래피용 하프톤 위상반전 블랭크 마스크 및 포토마스크

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05289307A (ja) * 1992-04-13 1993-11-05 Matsushita Electric Ind Co Ltd レチクルおよびレチクル製造方法
JPH0619112A (ja) * 1992-07-03 1994-01-28 Oki Electric Ind Co Ltd 位相シフトマスクの製造方法

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JPH0450943A (ja) * 1990-06-15 1992-02-19 Mitsubishi Electric Corp マスクパターンとその製造方法
US5604060A (en) * 1993-08-31 1997-02-18 Dai Nippon Printing Co., Ltd. Halftone phase shift photomask comprising a single layer of halftone light blocking and phase shifting
KR950027933A (ko) * 1994-03-21 1995-10-18 김주용 위상반전 마스크
US5510230A (en) * 1994-10-20 1996-04-23 At&T Corp. Device fabrication using DUV/EUV pattern delineation
JPH08202020A (ja) * 1995-01-31 1996-08-09 Sony Corp フォトマスクにおけるパターン形状評価方法、フォトマスク、フォトマスクの作製方法、フォトマスクのパターン形成方法、並びに露光方法
JPH09211837A (ja) 1996-01-30 1997-08-15 Sanyo Electric Co Ltd 位相シフトマスク及びその製造方法
JP2728078B2 (ja) * 1996-02-28 1998-03-18 日本電気株式会社 半導体装置の製造方法
KR100219079B1 (ko) * 1996-06-29 1999-09-01 김영환 해프톤 위상 반전 마스크
US6174631B1 (en) * 1997-02-10 2001-01-16 E. I. Du Pont De Nemours And Company Attenuating phase shift photomasks
KR100725214B1 (ko) * 1999-12-15 2007-06-07 다이니폰 인사츠 가부시키가이샤 하프톤 위상 시프트 포토 마스크용 블랭크, 및 하프톤위상 시프트 포토 마스크
JP3608654B2 (ja) * 2000-09-12 2005-01-12 Ｈｏｙａ株式会社 位相シフトマスクブランク、位相シフトマスク
JP3715189B2 (ja) * 2000-09-21 2005-11-09 株式会社ルネサステクノロジ 位相シフトマスク

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05289307A (ja) * 1992-04-13 1993-11-05 Matsushita Electric Ind Co Ltd レチクルおよびレチクル製造方法
JPH0619112A (ja) * 1992-07-03 1994-01-28 Oki Electric Ind Co Ltd 位相シフトマスクの製造方法

Also Published As

Publication number Publication date
TW556277B (en) 2003-10-01
US20030036293A1 (en) 2003-02-20
JP4053263B2 (ja) 2008-02-27
JP2003059805A (ja) 2003-02-28
KR20030015824A (ko) 2003-02-25
US6645856B2 (en) 2003-11-11

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