TW556277B - Method for manufacturing a semiconductor device - Google Patents
Method for manufacturing a semiconductor device Download PDFInfo
- Publication number
- TW556277B TW556277B TW091115633A TW91115633A TW556277B TW 556277 B TW556277 B TW 556277B TW 091115633 A TW091115633 A TW 091115633A TW 91115633 A TW91115633 A TW 91115633A TW 556277 B TW556277 B TW 556277B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- mask
- film
- semiconductor device
- phase shift
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 148
- 239000004065 semiconductor Substances 0.000 title claims description 107
- 230000010363 phase shift Effects 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims description 53
- 230000000873 masking effect Effects 0.000 claims description 38
- 230000002829 reductive effect Effects 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 11
- 238000012546 transfer Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 8
- 230000002079 cooperative effect Effects 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229910052704 radon Inorganic materials 0.000 claims 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 141
- 239000010409 thin film Substances 0.000 abstract description 9
- 230000009467 reduction Effects 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 87
- 235000012431 wafers Nutrition 0.000 description 32
- 238000011161 development Methods 0.000 description 29
- 239000011521 glass Substances 0.000 description 29
- 239000000047 product Substances 0.000 description 22
- 230000008569 process Effects 0.000 description 21
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000006870 function Effects 0.000 description 11
- 238000010894 electron beam technology Methods 0.000 description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000010985 leather Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- -1 arsenic ions Chemical class 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 241000282320 Panthera leo Species 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000008267 milk Substances 0.000 description 2
- 210000004080 milk Anatomy 0.000 description 2
- 235000013336 milk Nutrition 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000282326 Felis catus Species 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- AXZMZCSMQAXFEK-UHFFFAOYSA-N N.N.[Ce+4] Chemical compound N.N.[Ce+4] AXZMZCSMQAXFEK-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000012356 Product development Methods 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 210000003161 choroid Anatomy 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 229910021488 crystalline silicon dioxide Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 210000000887 face Anatomy 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- HCZCGHSBNHRSLG-UHFFFAOYSA-N n,n-disilylmethanamine Chemical compound CN([SiH3])[SiH3] HCZCGHSBNHRSLG-UHFFFAOYSA-N 0.000 description 1
- OMNKZBIFPJNNIO-UHFFFAOYSA-N n-(2-methyl-4-oxopentan-2-yl)prop-2-enamide Chemical compound CC(=O)CC(C)(C)NC(=O)C=C OMNKZBIFPJNNIO-UHFFFAOYSA-N 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000010396 two-hybrid screening Methods 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
- 229910052902 vermiculite Inorganic materials 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/946—Step and repeat
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001247868A JP4053263B2 (ja) | 2001-08-17 | 2001-08-17 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW556277B true TW556277B (en) | 2003-10-01 |
Family
ID=19077116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091115633A TW556277B (en) | 2001-08-17 | 2002-07-15 | Method for manufacturing a semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6645856B2 (enExample) |
| JP (1) | JP4053263B2 (enExample) |
| KR (1) | KR100856167B1 (enExample) |
| TW (1) | TW556277B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI767369B (zh) * | 2019-10-23 | 2022-06-11 | 南韓商S&S技術股份有限公司 | 半色調衰減式相移空白遮罩以及用於極紫外光微影的光罩 |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW541605B (en) * | 2000-07-07 | 2003-07-11 | Hitachi Ltd | Fabrication method of semiconductor integrated circuit device |
| US6765296B2 (en) * | 2002-01-10 | 2004-07-20 | Chartered Semiconductor Manufacturing Ltd. | Via-sea layout integrated circuits |
| US6872646B2 (en) * | 2002-06-07 | 2005-03-29 | Dia Nippon Printing Co., Ltd. | Method for manufacturing conductive pattern substrate |
| US7018556B2 (en) * | 2003-10-10 | 2006-03-28 | Asml Holding N.V. | Method to etch chrome deposited on calcium fluoride object |
| CN100461424C (zh) * | 2003-12-30 | 2009-02-11 | 中芯国际集成电路制造(上海)有限公司 | 半导体集成电路隧道氧化窗口区域设计的结构及方法 |
| US7794897B2 (en) * | 2004-03-02 | 2010-09-14 | Kabushiki Kaisha Toshiba | Mask pattern correcting method, mask pattern inspecting method, photo mask manufacturing method, and semiconductor device manufacturing method |
| TW200909999A (en) * | 2004-07-09 | 2009-03-01 | Hoya Corp | Photomask blank, photomask manufacturing method and semiconductor device manufacturing method |
| JP5008280B2 (ja) * | 2004-11-10 | 2012-08-22 | 株式会社Ｓｏｋｕｄｏ | 基板処理装置および基板処理方法 |
| JP5154007B2 (ja) | 2004-12-06 | 2013-02-27 | 株式会社Ｓｏｋｕｄｏ | 基板処理装置 |
| JP4794232B2 (ja) * | 2004-12-06 | 2011-10-19 | 株式会社Ｓｏｋｕｄｏ | 基板処理装置 |
| JP4926433B2 (ja) * | 2004-12-06 | 2012-05-09 | 株式会社Ｓｏｋｕｄｏ | 基板処理装置および基板処理方法 |
| KR100745065B1 (ko) * | 2004-12-27 | 2007-08-01 | 주식회사 하이닉스반도체 | 위상반전 마스크의 성장성 이물질 제거방법 |
| JP4718894B2 (ja) * | 2005-05-19 | 2011-07-06 | 株式会社東芝 | 半導体装置の製造方法 |
| US20070012335A1 (en) * | 2005-07-18 | 2007-01-18 | Chang Hsiao C | Photomask cleaning using vacuum ultraviolet (VUV) light cleaning |
| US7755207B2 (en) | 2005-07-27 | 2010-07-13 | Ricoh Company, Ltd. | Wafer, reticle, and exposure method using the wafer and reticle |
| JP4761907B2 (ja) * | 2005-09-28 | 2011-08-31 | 株式会社Sokudo | 基板処理装置 |
| KR101477262B1 (ko) * | 2005-12-28 | 2014-12-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
| KR100732769B1 (ko) | 2006-01-09 | 2007-06-27 | 주식회사 하이닉스반도체 | 포토마스크 제조방법 |
| JP4791207B2 (ja) * | 2006-02-16 | 2011-10-12 | 富士通セミコンダクター株式会社 | 位相シフトレチクルとその製造方法とその欠陥検査方法 |
| JP4900045B2 (ja) * | 2007-05-28 | 2012-03-21 | 富士通セミコンダクター株式会社 | フォトマスクの遮光帯作成方法及び遮光帯データ作成装置 |
| JP5348866B2 (ja) * | 2007-09-14 | 2013-11-20 | Ｈｏｙａ株式会社 | マスクの製造方法 |
| US9005848B2 (en) * | 2008-06-17 | 2015-04-14 | Photronics, Inc. | Photomask having a reduced field size and method of using the same |
| US9005849B2 (en) * | 2009-06-17 | 2015-04-14 | Photronics, Inc. | Photomask having a reduced field size and method of using the same |
| JP5360399B2 (ja) * | 2009-08-06 | 2013-12-04 | 大日本印刷株式会社 | 回折格子作製用位相マスク |
| CN110673435B (zh) * | 2013-01-15 | 2023-04-21 | Hoya株式会社 | 掩膜板坯料、相移掩膜板及半导体器件的制造方法 |
| JP5994952B2 (ja) * | 2015-02-03 | 2016-09-21 | 大日本印刷株式会社 | 蒸着マスクの製造方法、蒸着マスク製造装置、レーザー用マスクおよび有機半導体素子の製造方法 |
| US10908494B2 (en) * | 2017-05-31 | 2021-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask and manufacturing method thereof |
| US20220214611A1 (en) * | 2019-04-16 | 2022-07-07 | Shin-Etsu Chemical Co., Ltd. | Pellicle, Exposure Original Plate with Pellicle, Method for Producing Semiconductor Device, Method for Producing Liquid Crystal Display Board, Method for Regenerating Exposure Original Plate, and Peeling Residue Reduction Method |
| JP2020179408A (ja) * | 2019-04-25 | 2020-11-05 | イビデン株式会社 | エキシマレーザーによる加工方法 |
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| JPH0450943A (ja) * | 1990-06-15 | 1992-02-19 | Mitsubishi Electric Corp | マスクパターンとその製造方法 |
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| US5604060A (en) * | 1993-08-31 | 1997-02-18 | Dai Nippon Printing Co., Ltd. | Halftone phase shift photomask comprising a single layer of halftone light blocking and phase shifting |
| KR950027933A (ko) * | 1994-03-21 | 1995-10-18 | 김주용 | 위상반전 마스크 |
| US5510230A (en) * | 1994-10-20 | 1996-04-23 | At&T Corp. | Device fabrication using DUV/EUV pattern delineation |
| JPH08202020A (ja) * | 1995-01-31 | 1996-08-09 | Sony Corp | フォトマスクにおけるパターン形状評価方法、フォトマスク、フォトマスクの作製方法、フォトマスクのパターン形成方法、並びに露光方法 |
| JPH09211837A (ja) | 1996-01-30 | 1997-08-15 | Sanyo Electric Co Ltd | 位相シフトマスク及びその製造方法 |
| JP2728078B2 (ja) * | 1996-02-28 | 1998-03-18 | 日本電気株式会社 | 半導体装置の製造方法 |
| KR100219079B1 (ko) * | 1996-06-29 | 1999-09-01 | 김영환 | 해프톤 위상 반전 마스크 |
| US6174631B1 (en) * | 1997-02-10 | 2001-01-16 | E. I. Du Pont De Nemours And Company | Attenuating phase shift photomasks |
| KR100725214B1 (ko) * | 1999-12-15 | 2007-06-07 | 다이니폰 인사츠 가부시키가이샤 | 하프톤 위상 시프트 포토 마스크용 블랭크, 및 하프톤위상 시프트 포토 마스크 |
| JP3608654B2 (ja) * | 2000-09-12 | 2005-01-12 | Ｈｏｙａ株式会社 | 位相シフトマスクブランク、位相シフトマスク |
| JP3715189B2 (ja) * | 2000-09-21 | 2005-11-09 | 株式会社ルネサステクノロジ | 位相シフトマスク |
-
2001
- 2001-08-17 JP JP2001247868A patent/JP4053263B2/ja not_active Expired - Fee Related
-
2002
- 2002-05-31 KR KR1020020030529A patent/KR100856167B1/ko not_active Expired - Fee Related
- 2002-06-14 US US10/170,647 patent/US6645856B2/en not_active Expired - Lifetime
- 2002-07-15 TW TW091115633A patent/TW556277B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI767369B (zh) * | 2019-10-23 | 2022-06-11 | 南韓商S&S技術股份有限公司 | 半色調衰減式相移空白遮罩以及用於極紫外光微影的光罩 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100856167B1 (ko) | 2008-09-03 |
| US20030036293A1 (en) | 2003-02-20 |
| JP4053263B2 (ja) | 2008-02-27 |
| JP2003059805A (ja) | 2003-02-28 |
| KR20030015824A (ko) | 2003-02-25 |
| US6645856B2 (en) | 2003-11-11 |
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