JP4053263B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4053263B2
JP4053263B2 JP2001247868A JP2001247868A JP4053263B2 JP 4053263 B2 JP4053263 B2 JP 4053263B2 JP 2001247868 A JP2001247868 A JP 2001247868A JP 2001247868 A JP2001247868 A JP 2001247868A JP 4053263 B2 JP4053263 B2 JP 4053263B2
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JP
Japan
Prior art keywords
semiconductor device
manufacturing
film
phase shift
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001247868A
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English (en)
Japanese (ja)
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JP2003059805A (ja
JP2003059805A5 (enExample
Inventor
稔彦 田中
昇雄 長谷川
恒男 寺澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2001247868A priority Critical patent/JP4053263B2/ja
Priority to KR1020020030529A priority patent/KR100856167B1/ko
Priority to US10/170,647 priority patent/US6645856B2/en
Priority to TW091115633A priority patent/TW556277B/zh
Publication of JP2003059805A publication Critical patent/JP2003059805A/ja
Publication of JP2003059805A5 publication Critical patent/JP2003059805A5/ja
Application granted granted Critical
Publication of JP4053263B2 publication Critical patent/JP4053263B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/946—Step and repeat

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2001247868A 2001-08-17 2001-08-17 半導体装置の製造方法 Expired - Fee Related JP4053263B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001247868A JP4053263B2 (ja) 2001-08-17 2001-08-17 半導体装置の製造方法
KR1020020030529A KR100856167B1 (ko) 2001-08-17 2002-05-31 반도체장치의 제조방법
US10/170,647 US6645856B2 (en) 2001-08-17 2002-06-14 Method for manufacturing a semiconductor device using half-tone phase-shift mask to transfer a pattern onto a substrate
TW091115633A TW556277B (en) 2001-08-17 2002-07-15 Method for manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001247868A JP4053263B2 (ja) 2001-08-17 2001-08-17 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2003059805A JP2003059805A (ja) 2003-02-28
JP2003059805A5 JP2003059805A5 (enExample) 2005-06-16
JP4053263B2 true JP4053263B2 (ja) 2008-02-27

Family

ID=19077116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001247868A Expired - Fee Related JP4053263B2 (ja) 2001-08-17 2001-08-17 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US6645856B2 (enExample)
JP (1) JP4053263B2 (enExample)
KR (1) KR100856167B1 (enExample)
TW (1) TW556277B (enExample)

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TW541605B (en) * 2000-07-07 2003-07-11 Hitachi Ltd Fabrication method of semiconductor integrated circuit device
US6765296B2 (en) * 2002-01-10 2004-07-20 Chartered Semiconductor Manufacturing Ltd. Via-sea layout integrated circuits
US6872646B2 (en) * 2002-06-07 2005-03-29 Dia Nippon Printing Co., Ltd. Method for manufacturing conductive pattern substrate
US7018556B2 (en) * 2003-10-10 2006-03-28 Asml Holding N.V. Method to etch chrome deposited on calcium fluoride object
CN100461424C (zh) * 2003-12-30 2009-02-11 中芯国际集成电路制造(上海)有限公司 半导体集成电路隧道氧化窗口区域设计的结构及方法
US7794897B2 (en) * 2004-03-02 2010-09-14 Kabushiki Kaisha Toshiba Mask pattern correcting method, mask pattern inspecting method, photo mask manufacturing method, and semiconductor device manufacturing method
TW200909999A (en) * 2004-07-09 2009-03-01 Hoya Corp Photomask blank, photomask manufacturing method and semiconductor device manufacturing method
JP5008280B2 (ja) * 2004-11-10 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP5154007B2 (ja) 2004-12-06 2013-02-27 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4794232B2 (ja) * 2004-12-06 2011-10-19 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4926433B2 (ja) * 2004-12-06 2012-05-09 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
KR100745065B1 (ko) * 2004-12-27 2007-08-01 주식회사 하이닉스반도체 위상반전 마스크의 성장성 이물질 제거방법
JP4718894B2 (ja) * 2005-05-19 2011-07-06 株式会社東芝 半導体装置の製造方法
US20070012335A1 (en) * 2005-07-18 2007-01-18 Chang Hsiao C Photomask cleaning using vacuum ultraviolet (VUV) light cleaning
US7755207B2 (en) 2005-07-27 2010-07-13 Ricoh Company, Ltd. Wafer, reticle, and exposure method using the wafer and reticle
JP4761907B2 (ja) * 2005-09-28 2011-08-31 株式会社Sokudo 基板処理装置
KR101477262B1 (ko) * 2005-12-28 2014-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
KR100732769B1 (ko) 2006-01-09 2007-06-27 주식회사 하이닉스반도체 포토마스크 제조방법
JP4791207B2 (ja) * 2006-02-16 2011-10-12 富士通セミコンダクター株式会社 位相シフトレチクルとその製造方法とその欠陥検査方法
JP4900045B2 (ja) * 2007-05-28 2012-03-21 富士通セミコンダクター株式会社 フォトマスクの遮光帯作成方法及び遮光帯データ作成装置
JP5348866B2 (ja) * 2007-09-14 2013-11-20 Ｈｏｙａ株式会社 マスクの製造方法
US9005848B2 (en) * 2008-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
US9005849B2 (en) * 2009-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
JP5360399B2 (ja) * 2009-08-06 2013-12-04 大日本印刷株式会社 回折格子作製用位相マスク
CN110673435B (zh) * 2013-01-15 2023-04-21 Hoya株式会社 掩膜板坯料、相移掩膜板及半导体器件的制造方法
JP5994952B2 (ja) * 2015-02-03 2016-09-21 大日本印刷株式会社 蒸着マスクの製造方法、蒸着マスク製造装置、レーザー用マスクおよび有機半導体素子の製造方法
US10908494B2 (en) * 2017-05-31 2021-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and manufacturing method thereof
US20220214611A1 (en) * 2019-04-16 2022-07-07 Shin-Etsu Chemical Co., Ltd. Pellicle, Exposure Original Plate with Pellicle, Method for Producing Semiconductor Device, Method for Producing Liquid Crystal Display Board, Method for Regenerating Exposure Original Plate, and Peeling Residue Reduction Method
JP2020179408A (ja) * 2019-04-25 2020-11-05 イビデン株式会社 エキシマレーザーによる加工方法
KR102473558B1 (ko) * 2019-10-23 2022-12-05 주식회사 에스앤에스텍 극자외선 리소그래피용 하프톤 위상반전 블랭크 마스크 및 포토마스크

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JPH0450943A (ja) * 1990-06-15 1992-02-19 Mitsubishi Electric Corp マスクパターンとその製造方法
JPH05289307A (ja) * 1992-04-13 1993-11-05 Matsushita Electric Ind Co Ltd レチクルおよびレチクル製造方法
JPH0619112A (ja) * 1992-07-03 1994-01-28 Oki Electric Ind Co Ltd 位相シフトマスクの製造方法
US5604060A (en) * 1993-08-31 1997-02-18 Dai Nippon Printing Co., Ltd. Halftone phase shift photomask comprising a single layer of halftone light blocking and phase shifting
KR950027933A (ko) * 1994-03-21 1995-10-18 김주용 위상반전 마스크
US5510230A (en) * 1994-10-20 1996-04-23 At&T Corp. Device fabrication using DUV/EUV pattern delineation
JPH08202020A (ja) * 1995-01-31 1996-08-09 Sony Corp フォトマスクにおけるパターン形状評価方法、フォトマスク、フォトマスクの作製方法、フォトマスクのパターン形成方法、並びに露光方法
JPH09211837A (ja) 1996-01-30 1997-08-15 Sanyo Electric Co Ltd 位相シフトマスク及びその製造方法
JP2728078B2 (ja) * 1996-02-28 1998-03-18 日本電気株式会社 半導体装置の製造方法
KR100219079B1 (ko) * 1996-06-29 1999-09-01 김영환 해프톤 위상 반전 마스크
US6174631B1 (en) * 1997-02-10 2001-01-16 E. I. Du Pont De Nemours And Company Attenuating phase shift photomasks
KR100725214B1 (ko) * 1999-12-15 2007-06-07 다이니폰 인사츠 가부시키가이샤 하프톤 위상 시프트 포토 마스크용 블랭크, 및 하프톤위상 시프트 포토 마스크
JP3608654B2 (ja) * 2000-09-12 2005-01-12 Ｈｏｙａ株式会社 位相シフトマスクブランク、位相シフトマスク
JP3715189B2 (ja) * 2000-09-21 2005-11-09 株式会社ルネサステクノロジ 位相シフトマスク

Also Published As

Publication number Publication date
TW556277B (en) 2003-10-01
KR100856167B1 (ko) 2008-09-03
US20030036293A1 (en) 2003-02-20
JP2003059805A (ja) 2003-02-28
KR20030015824A (ko) 2003-02-25
US6645856B2 (en) 2003-11-11

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