KR100849570B1 - 박막 구조체의 형성 방법 및 박막 구조체, 진동 센서, 압력센서 및 가속도 센서 - Google Patents
박막 구조체의 형성 방법 및 박막 구조체, 진동 센서, 압력센서 및 가속도 센서 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 146
- 238000000034 method Methods 0.000 title claims abstract description 52
- 230000001133 acceleration Effects 0.000 title claims description 16
- 230000015572 biosynthetic process Effects 0.000 title claims description 11
- 239000010408 film Substances 0.000 claims abstract description 303
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 57
- 229920005591 polysilicon Polymers 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000005530 etching Methods 0.000 claims description 76
- 239000012535 impurity Substances 0.000 claims description 40
- 230000007547 defect Effects 0.000 claims description 27
- 238000009429 electrical wiring Methods 0.000 claims description 19
- 230000002265 prevention Effects 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 226
- 238000010438 heat treatment Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 14
- 244000126211 Hericium coralloides Species 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011295 pitch Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 206010033733 Papule Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0161—Controlling physical properties of the material
- B81C2201/0163—Controlling internal stress of deposited layers
- B81C2201/0167—Controlling internal stress of deposited layers by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
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- General Chemical & Material Sciences (AREA)
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- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Measuring Fluid Pressure (AREA)
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- Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
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Abstract
Description
Claims (10)
- 기판의 위에 하층막과 상층막으로 이루어지는 박막 구조체를 형성하기 위한 방법에 있어서,기판의 위에 폴리실리콘 박막으로 이루어지는 하층막을 형성하는 공정과,상기 하층막에 불순물을 도프하여 열확산시킴에 의해 상기 하층막을 도통화시키는 공정과,상기 하층막의 위에, 도통화되지 않고, 또한, 상기 하층막의 압축 응력을 약하게 하는 인장 응력을 갖는, 폴리실리콘 박막으로 이루어지는 상층막을 형성하는 공정을 구비한 것을 특징으로 하는 박막 구조체의 형성 방법.
- 제 1항에 있어서,상기 박막 구조체가, 전체로서 인장 응력을 갖도록 조정되어 있는 것을 특징으로 하는 박막 구조체의 형성 방법.
- 제 1항에 있어서,상기 하층막에 불순물을 도프한 후, 불순물을 열확산시키기 전에, 상기 하층막의 윗면에 결함 방지막을 형성하는 것을 특징으로 하는 박막 구조체의 형성 방법.
- 제 3항에 있어서,상기 결함 방지막의 위에 상기 상층막을 형성한 후, 상기 결함 방지막을 에칭 스톱층으로 하여 상층막의 일부를 에칭 제거함으로서 상기 하층막의 일부를 상기 상층막으로부터 전기적으로 노출시키는 것을 특징으로 하는 박막 구조체의 형성 방법.
- 제 4항에 있어서,상기 불순물을 열확산시킨 후에, 일부를 남기고 상기 결함 방지막을 에칭 제거하고, 상기 결함 방지막의 위로부터 상기 하층막의 위에 상기 상층막을 형성하고,상기 결함 방지막을 에칭 스톱층으로 하여 상층막의 일부를 에칭 제거함으로서 상기 하층막의 일부를 상기 상층막으로부터 전기적으로 노출시키는 것을 특징으로 하는 박막 구조체의 형성 방법.
- 제 1항에 있어서,상기 하층막을 형성하기 전 또는 후에, 상기 하층막을 도통화시킨 후에 하층막과 전기적으로 도통하는 전기 배선부를 상기 기판의 위에 형성하여 두고, 상기 전기 배선부의 위에 상기 상층막을 형성하고, 상기 전기 배선부를 상기 상층막으로부터 노출시키는 것을 특징으로 하는 박막 구조체의 형성 방법.
- 기판과,상기 기판의 위에 형성된 폴리실리콘 박막으로 이루어진 하층막과,상기 하층막의 위에 형성된 폴리실리콘 박막으로 이루어진 상층막으로 이루어지고,상기 하층막은 불순물을 도프하여 열확산시킴에 의해 도통화되어 있고,상기 상층막은, 도통화되지 않고, 또한, 상기 하층막의 압축 응력을 약하게하는 인장응력을 갖는 것을 특징으로 하는 박막 구조체.
- 제 7항에 기재된 박막 구조체를 센싱부에 구비한 것을 특징으로 하는 진동 센서.
- 제 7항에 기재된 박막 구조체를 센싱부에 구비한 것을 특징으로 하는 압력 센서.
- 제 7항에 기재된 박막 구조체를 센싱부에 구비한 것을 특징으로 하는 가속도 센서.
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Application Number | Priority Date | Filing Date | Title |
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JP2006044870A JP4929753B2 (ja) | 2006-02-22 | 2006-02-22 | 薄膜構造体の形成方法並びに薄膜構造体、振動センサ、圧力センサ及び加速度センサ |
JPJP-P-2006-00044870 | 2006-02-22 |
Publications (2)
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KR20070085024A KR20070085024A (ko) | 2007-08-27 |
KR100849570B1 true KR100849570B1 (ko) | 2008-07-31 |
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KR1020060130575A KR100849570B1 (ko) | 2006-02-22 | 2006-12-20 | 박막 구조체의 형성 방법 및 박막 구조체, 진동 센서, 압력센서 및 가속도 센서 |
Country Status (4)
Country | Link |
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US (1) | US7569413B2 (ko) |
EP (1) | EP1826174B1 (ko) |
JP (1) | JP4929753B2 (ko) |
KR (1) | KR100849570B1 (ko) |
Families Citing this family (17)
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EP1771036A3 (en) * | 2005-09-26 | 2013-05-22 | Yamaha Corporation | Capacitor microphone and diaphragm therefor |
JP4660426B2 (ja) * | 2006-05-31 | 2011-03-30 | 三洋電機株式会社 | センサ装置およびダイアフラム構造体 |
KR101262386B1 (ko) | 2006-09-25 | 2013-05-08 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자의 제조 방법 |
JP5006364B2 (ja) * | 2008-07-28 | 2012-08-22 | アオイ電子株式会社 | 指向性マイクロフォン |
JP2010091467A (ja) * | 2008-10-09 | 2010-04-22 | Rohm Co Ltd | 圧力センサおよび圧力センサの製造方法 |
JPWO2010079574A1 (ja) * | 2009-01-09 | 2012-06-21 | パナソニック株式会社 | Memsデバイス |
JP5067584B2 (ja) * | 2009-03-02 | 2012-11-07 | オムロン株式会社 | 半導体センサ及びその製造方法 |
JP5558198B2 (ja) * | 2010-05-13 | 2014-07-23 | 三菱電機株式会社 | 半導体圧力センサ |
KR101137929B1 (ko) * | 2010-05-31 | 2012-05-09 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 그 제조 방법 |
US8318575B2 (en) * | 2011-02-07 | 2012-11-27 | Infineon Technologies Ag | Compressive polycrystalline silicon film and method of manufacture thereof |
US8409900B2 (en) * | 2011-04-19 | 2013-04-02 | Eastman Kodak Company | Fabricating MEMS composite transducer including compliant membrane |
JP2012252138A (ja) * | 2011-06-02 | 2012-12-20 | Japan Display East Co Ltd | 表示装置および表示装置の製造方法 |
JP5729316B2 (ja) * | 2012-01-23 | 2015-06-03 | 株式会社デンソー | 容量式物理量検出装置 |
DE102012102020A1 (de) * | 2012-03-09 | 2013-09-12 | Epcos Ag | Mikromechanisches Messelement |
JP5649636B2 (ja) * | 2012-11-08 | 2015-01-07 | ティエンシェン・ジョウ | 静電容量トランスデューサの製造方法 |
JP6164053B2 (ja) * | 2013-11-07 | 2017-07-19 | 株式会社デンソー | ラム波式センシングデバイス |
US10322481B2 (en) * | 2014-03-06 | 2019-06-18 | Infineon Technologies Ag | Support structure and method of forming a support structure |
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- 2006-02-22 JP JP2006044870A patent/JP4929753B2/ja not_active Expired - Fee Related
- 2006-12-20 KR KR1020060130575A patent/KR100849570B1/ko active IP Right Grant
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2007
- 2007-01-19 EP EP07100826.2A patent/EP1826174B1/en active Active
- 2007-02-07 US US11/703,444 patent/US7569413B2/en active Active
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JPH0961270A (ja) * | 1995-08-22 | 1997-03-07 | Toyoda Mach Works Ltd | 半導体圧力センサ |
KR20030027951A (ko) * | 2001-06-13 | 2003-04-07 | 미쓰비시덴키 가부시키가이샤 | 박막구조체 및 그 제조방법과, 가속도 센서 및 그 제조방법 |
KR20040011243A (ko) * | 2002-07-30 | 2004-02-05 | 주식회사 비에스이 | 콘덴서 마이크로폰용 다층 다이어프램의 제조방법 |
KR20060090194A (ko) * | 2005-02-07 | 2006-08-10 | 니혼도꾸슈도교 가부시키가이샤 | 마이크로 히터 및 센서 |
Also Published As
Publication number | Publication date |
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JP4929753B2 (ja) | 2012-05-09 |
EP1826174B1 (en) | 2018-09-12 |
JP2007225362A (ja) | 2007-09-06 |
EP1826174A3 (en) | 2010-11-10 |
EP1826174A2 (en) | 2007-08-29 |
US7569413B2 (en) | 2009-08-04 |
KR20070085024A (ko) | 2007-08-27 |
US20070196946A1 (en) | 2007-08-23 |
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