KR100845486B1 - 레지스트 패턴의 형성 방법, 반도체 장치 및 그 제조 방법 - Google Patents

레지스트 패턴의 형성 방법, 반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR100845486B1
KR100845486B1 KR20060138106A KR20060138106A KR100845486B1 KR 100845486 B1 KR100845486 B1 KR 100845486B1 KR 20060138106 A KR20060138106 A KR 20060138106A KR 20060138106 A KR20060138106 A KR 20060138106A KR 100845486 B1 KR100845486 B1 KR 100845486B1
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South Korea
Prior art keywords
resist pattern
resist
pattern
forming
thickening material
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KR20060138106A
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English (en)
Korean (ko)
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KR20080016406A (ko
Inventor
고자와 미와
노자키 코지
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후지쯔 가부시끼가이샤
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Publication of KR20080016406A publication Critical patent/KR20080016406A/ko
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Publication of KR100845486B1 publication Critical patent/KR100845486B1/ko

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31144Etching the insulating layers by chemical or physical means using masks
KR20060138106A 2006-08-17 2006-12-29 레지스트 패턴의 형성 방법, 반도체 장치 및 그 제조 방법 KR100845486B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006222498A JP4724073B2 (ja) 2006-08-17 2006-08-17 レジストパターンの形成方法、半導体装置及びその製造方法
JPJP-P-2006-00222498 2006-08-17

Publications (2)

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KR20080016406A KR20080016406A (ko) 2008-02-21
KR100845486B1 true KR100845486B1 (ko) 2008-07-10

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US (2) US8119325B2 (US08119325-20120221-C00001.png)
JP (1) JP4724073B2 (US08119325-20120221-C00001.png)
KR (1) KR100845486B1 (US08119325-20120221-C00001.png)
CN (1) CN101226335B (US08119325-20120221-C00001.png)
DE (1) DE102006058795B4 (US08119325-20120221-C00001.png)
TW (1) TWI358748B (US08119325-20120221-C00001.png)

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JP5018307B2 (ja) * 2006-09-26 2012-09-05 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
WO2009110166A1 (ja) * 2008-03-06 2009-09-11 パナソニック株式会社 レジスト材料及びそれを用いたパターン形成方法
JP5321415B2 (ja) * 2009-11-04 2013-10-23 富士通株式会社 レジストパターン厚肉化材料、並びに、半導体装置及びその製造方法
US20130189495A1 (en) * 2010-11-12 2013-07-25 The Regents Of The University Of Michigan Nanoscale Photolithography
JP6075724B2 (ja) * 2012-10-01 2017-02-08 アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
CN103871846B (zh) * 2012-12-18 2017-06-13 中芯国际集成电路制造(上海)有限公司 自对准多重图形化方法及硅基硬掩模组合物的应用
US10162265B2 (en) * 2015-12-09 2018-12-25 Rohm And Haas Electronic Materials Llc Pattern treatment methods
KR102398664B1 (ko) * 2016-01-26 2022-05-16 삼성전자주식회사 반도체 소자의 제조 방법
JP7065311B2 (ja) * 2017-11-22 2022-05-12 パナソニックIpマネジメント株式会社 素子チップの製造方法
CN108490739A (zh) * 2018-03-29 2018-09-04 上海华力集成电路制造有限公司 光刻胶涂布方法

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Also Published As

Publication number Publication date
JP2008046408A (ja) 2008-02-28
DE102006058795A1 (de) 2008-02-28
JP4724073B2 (ja) 2011-07-13
KR20080016406A (ko) 2008-02-21
TW200811918A (en) 2008-03-01
CN101226335A (zh) 2008-07-23
DE102006058795B4 (de) 2012-12-20
TWI358748B (en) 2012-02-21
US20120098103A1 (en) 2012-04-26
US8945816B2 (en) 2015-02-03
CN101226335B (zh) 2012-03-21
US8119325B2 (en) 2012-02-21
US20080044769A1 (en) 2008-02-21

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