KR100837476B1 - 석영 유리 도가니 및 이를 제조하는 방법 - Google Patents

석영 유리 도가니 및 이를 제조하는 방법 Download PDF

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Publication number
KR100837476B1
KR100837476B1 KR1020037012215A KR20037012215A KR100837476B1 KR 100837476 B1 KR100837476 B1 KR 100837476B1 KR 1020037012215 A KR1020037012215 A KR 1020037012215A KR 20037012215 A KR20037012215 A KR 20037012215A KR 100837476 B1 KR100837476 B1 KR 100837476B1
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KR
South Korea
Prior art keywords
quartz glass
layer
glass crucible
crucible
stabilizing
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Expired - Fee Related
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KR1020037012215A
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English (en)
Korean (ko)
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KR20030093256A (ko
Inventor
발트란트 베르덱커
롤프 게르하르트
요한 라이스트
Original Assignee
헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지
신에쯔 세끼에이 가부시키가이샤
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Publication of KR20030093256A publication Critical patent/KR20030093256A/ko
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C03C17/003—General methods for coating; Devices therefor for hollow ware, e.g. containers
    • C03C17/005—Coating the outside
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Surface Treatment Of Glass (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Glass Compositions (AREA)
KR1020037012215A 2001-03-23 2002-03-20 석영 유리 도가니 및 이를 제조하는 방법 Expired - Fee Related KR100837476B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10114698A DE10114698A1 (de) 2001-03-23 2001-03-23 Bauteil aus Quarzglas sowie Verfahren zur Herstellung desselben
DE10114698.1 2001-03-23
PCT/EP2002/003118 WO2002092525A1 (de) 2001-03-23 2002-03-20 Bauteil aus quarzglas sowie verfahren zur herstellung desselben

Publications (2)

Publication Number Publication Date
KR20030093256A KR20030093256A (ko) 2003-12-06
KR100837476B1 true KR100837476B1 (ko) 2008-06-12

Family

ID=7679010

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037012215A Expired - Fee Related KR100837476B1 (ko) 2001-03-23 2002-03-20 석영 유리 도가니 및 이를 제조하는 방법

Country Status (8)

Country Link
US (1) US20040115440A1 (enExample)
EP (1) EP1370498B1 (enExample)
JP (1) JP4262483B2 (enExample)
KR (1) KR100837476B1 (enExample)
CN (1) CN1239423C (enExample)
DE (2) DE10114698A1 (enExample)
NO (1) NO20034212L (enExample)
WO (1) WO2002092525A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101440804B1 (ko) 2010-12-28 2014-09-18 쟈판 스파 쿼츠 가부시키가이샤 복합 도가니 및 그 제조 방법

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7887923B2 (en) 2005-03-09 2011-02-15 Evonik Degussa Gmbh Plasma-sprayed layers of aluminium oxide
EP1700926A1 (de) * 2005-03-09 2006-09-13 Degussa AG Plasmagespritzte Schichten aus Aluminiumoxid
DE102008033946B3 (de) 2008-07-19 2009-09-10 Heraeus Quarzglas Gmbh & Co. Kg Quarzglastiegel mit einer Stickstoffdotierung und Verfahren zur Herstellung eines derartigen Tiegels
JP5102744B2 (ja) * 2008-10-31 2012-12-19 ジャパンスーパークォーツ株式会社 石英ルツボ製造用モールド
DE102009013715B4 (de) 2009-03-20 2013-07-18 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung eines Quarzglaskörpers, insbesondere eines Quarzglastiegels
WO2011013695A1 (ja) 2009-07-31 2011-02-03 ジャパンスーパークォーツ株式会社 シリコン単結晶引き上げ用シリカガラスルツボ
KR101457504B1 (ko) * 2009-09-09 2014-11-03 쟈판 스파 쿼츠 가부시키가이샤 복합 도가니, 그 제조 방법, 및 실리콘 결정의 제조 방법
JP5128570B2 (ja) * 2009-10-22 2013-01-23 ジャパンスーパークォーツ株式会社 複合ルツボ及びその製造方法
JP5488519B2 (ja) * 2011-04-11 2014-05-14 信越半導体株式会社 石英ガラスルツボ及びその製造方法、並びにシリコン単結晶の製造方法
TW201245474A (en) * 2011-05-12 2012-11-16 Hon Hai Prec Ind Co Ltd Evaporation source device and a coating method using the same
KR101282766B1 (ko) * 2011-05-16 2013-07-05 (주)세렉트론 용융 도가니의 재활용 방법 및 그에 의해 제조된 도가니
DE102012008437B3 (de) * 2012-04-30 2013-03-28 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung synthetischer Quarzglaskörnung
DE202012005644U1 (de) * 2012-06-08 2012-09-20 Matthias Brenncke Glasfeuerstelle zur Ermöglichung eines allseitigen Feuererlebnisses ohne das Erfordernis eines hitzebeständigen Untergrundes.
DE102012011793A1 (de) 2012-06-15 2013-12-19 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung eines Quarzglastiegels
SG11201508512PA (en) * 2013-05-23 2015-12-30 Applied Materials Inc A coated liner assembly for a semiconductor processing chamber
CN108698894A (zh) 2015-12-18 2018-10-23 贺利氏石英玻璃有限两合公司 在多腔式烘箱中制备石英玻璃体
KR20180094087A (ko) 2015-12-18 2018-08-22 헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지 실리카 과립으로부터 실리카 유리 제품의 제조
CN109153593A (zh) 2015-12-18 2019-01-04 贺利氏石英玻璃有限两合公司 合成石英玻璃粉粒的制备
CN108698883A (zh) 2015-12-18 2018-10-23 贺利氏石英玻璃有限两合公司 石英玻璃制备中的二氧化硅的喷雾造粒
KR20180095619A (ko) 2015-12-18 2018-08-27 헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지 실리카 유리 제조 동안 규소 함량의 증가
WO2017103153A1 (de) 2015-12-18 2017-06-22 Heraeus Quarzglas Gmbh & Co. Kg Glasfasern und vorformen aus quarzglas mit geringem oh-, cl- und al-gehalt
TWI733723B (zh) 2015-12-18 2021-07-21 德商何瑞斯廓格拉斯公司 不透明石英玻璃體的製備
WO2017103131A1 (de) 2015-12-18 2017-06-22 Heraeus Quarzglas Gmbh & Co. Kg Verringern des erdalkalimetallgehalts von siliziumdioxidgranulat durch behandlung von kohlenstoffdotiertem siliziumdioxidgranulat bei hoher temperatur
EP3390303B1 (de) 2015-12-18 2024-02-07 Heraeus Quarzglas GmbH & Co. KG Herstellung von quarzglaskörpern mit taupunktkontrolle im schmelzofen
JP6940235B2 (ja) 2015-12-18 2021-09-22 ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー 高融点金属の溶融坩堝内での石英ガラス体の調製
CN105861972A (zh) * 2016-04-15 2016-08-17 航天材料及工艺研究所 一种氧化铬-氧化钛基高温高发射率涂层及其制备方法
JP6681303B2 (ja) * 2016-09-13 2020-04-15 クアーズテック株式会社 石英ガラスルツボ及びその製造方法
CN108531980B (zh) * 2018-05-29 2020-12-11 宁夏富乐德石英材料有限公司 改良石英坩埚及其制作方法
JP7157932B2 (ja) * 2019-01-11 2022-10-21 株式会社Sumco シリカガラスルツボの製造装置および製造方法
WO2022131047A1 (ja) * 2020-12-18 2022-06-23 株式会社Sumco 石英ガラスルツボ及びその製造方法並びにシリコン単結晶の製造方法
CN115557710B (zh) * 2022-11-10 2025-09-16 浙江美晶新材料股份有限公司 一种单晶石英坩埚喷涂装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4395432A (en) 1981-12-16 1983-07-26 Westinghouse Electric Corp. β-Alumina coating

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997036744A1 (en) * 1996-03-29 1997-10-09 Billings Garth W Refractory nitride, carbide, ternary oxide, nitride/oxide, oxide/carbide, oxycarbide, and oxynitride materials and articles
US6479108B2 (en) * 2000-11-15 2002-11-12 G.T. Equipment Technologies, Inc. Protective layer for quartz crucibles used for silicon crystallization

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4395432A (en) 1981-12-16 1983-07-26 Westinghouse Electric Corp. β-Alumina coating

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101440804B1 (ko) 2010-12-28 2014-09-18 쟈판 스파 쿼츠 가부시키가이샤 복합 도가니 및 그 제조 방법

Also Published As

Publication number Publication date
DE50201295D1 (de) 2004-11-18
KR20030093256A (ko) 2003-12-06
CN1498196A (zh) 2004-05-19
WO2002092525A1 (de) 2002-11-21
US20040115440A1 (en) 2004-06-17
CN1239423C (zh) 2006-02-01
DE10114698A1 (de) 2002-09-26
NO20034212D0 (no) 2003-09-22
NO20034212L (no) 2003-11-05
EP1370498B1 (de) 2004-10-13
JP4262483B2 (ja) 2009-05-13
EP1370498A1 (de) 2003-12-17
JP2004531449A (ja) 2004-10-14

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St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000