JP4262483B2 - 石英ガラスの構成材およびその製造方法 - Google Patents

石英ガラスの構成材およびその製造方法 Download PDF

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Publication number
JP4262483B2
JP4262483B2 JP2002589416A JP2002589416A JP4262483B2 JP 4262483 B2 JP4262483 B2 JP 4262483B2 JP 2002589416 A JP2002589416 A JP 2002589416A JP 2002589416 A JP2002589416 A JP 2002589416A JP 4262483 B2 JP4262483 B2 JP 4262483B2
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Japan
Prior art keywords
layer
quartz glass
glass crucible
stabilizing layer
stabilizing
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Expired - Fee Related
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JP2002589416A
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English (en)
Japanese (ja)
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JP2004531449A5 (enExample
JP2004531449A (ja
Inventor
ヴェルデッカー ヴァルトラウト
ローム ゲルハルト
ライスト ヨハン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
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Shin Etsu Quartz Products Co Ltd
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Publication of JP2004531449A5 publication Critical patent/JP2004531449A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C03C17/003—General methods for coating; Devices therefor for hollow ware, e.g. containers
    • C03C17/005—Coating the outside
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Surface Treatment Of Glass (AREA)
  • Glass Compositions (AREA)
  • Coating By Spraying Or Casting (AREA)
JP2002589416A 2001-03-23 2002-03-20 石英ガラスの構成材およびその製造方法 Expired - Fee Related JP4262483B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10114698A DE10114698A1 (de) 2001-03-23 2001-03-23 Bauteil aus Quarzglas sowie Verfahren zur Herstellung desselben
PCT/EP2002/003118 WO2002092525A1 (de) 2001-03-23 2002-03-20 Bauteil aus quarzglas sowie verfahren zur herstellung desselben

Publications (3)

Publication Number Publication Date
JP2004531449A JP2004531449A (ja) 2004-10-14
JP2004531449A5 JP2004531449A5 (enExample) 2006-01-05
JP4262483B2 true JP4262483B2 (ja) 2009-05-13

Family

ID=7679010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002589416A Expired - Fee Related JP4262483B2 (ja) 2001-03-23 2002-03-20 石英ガラスの構成材およびその製造方法

Country Status (8)

Country Link
US (1) US20040115440A1 (enExample)
EP (1) EP1370498B1 (enExample)
JP (1) JP4262483B2 (enExample)
KR (1) KR100837476B1 (enExample)
CN (1) CN1239423C (enExample)
DE (2) DE10114698A1 (enExample)
NO (1) NO20034212L (enExample)
WO (1) WO2002092525A1 (enExample)

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JP4518410B2 (ja) 2005-03-09 2010-08-04 エボニック デグサ ゲーエムベーハー プラズマ溶射された酸化アルミニウム層
EP1700926A1 (de) * 2005-03-09 2006-09-13 Degussa AG Plasmagespritzte Schichten aus Aluminiumoxid
DE102008033946B3 (de) * 2008-07-19 2009-09-10 Heraeus Quarzglas Gmbh & Co. Kg Quarzglastiegel mit einer Stickstoffdotierung und Verfahren zur Herstellung eines derartigen Tiegels
JP5102744B2 (ja) * 2008-10-31 2012-12-19 ジャパンスーパークォーツ株式会社 石英ルツボ製造用モールド
DE102009013715B4 (de) 2009-03-20 2013-07-18 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung eines Quarzglaskörpers, insbesondere eines Quarzglastiegels
CN102471922B (zh) 2009-07-31 2014-12-10 日本超精石英株式会社 单晶硅提拉用氧化硅玻璃坩埚
CN102471926B (zh) * 2009-09-09 2015-05-06 日本超精石英株式会社 复合坩埚及其制造方法以及硅晶体的制造方法
JP5128570B2 (ja) * 2009-10-22 2013-01-23 ジャパンスーパークォーツ株式会社 複合ルツボ及びその製造方法
JP5574534B2 (ja) 2010-12-28 2014-08-20 株式会社Ｓｕｍｃｏ 複合ルツボ
JP5488519B2 (ja) * 2011-04-11 2014-05-14 信越半導体株式会社 石英ガラスルツボ及びその製造方法、並びにシリコン単結晶の製造方法
TW201245474A (en) * 2011-05-12 2012-11-16 Hon Hai Prec Ind Co Ltd Evaporation source device and a coating method using the same
KR101282766B1 (ko) * 2011-05-16 2013-07-05 (주)세렉트론 용융 도가니의 재활용 방법 및 그에 의해 제조된 도가니
DE102012008437B3 (de) * 2012-04-30 2013-03-28 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung synthetischer Quarzglaskörnung
DE202012005644U1 (de) * 2012-06-08 2012-09-20 Matthias Brenncke Glasfeuerstelle zur Ermöglichung eines allseitigen Feuererlebnisses ohne das Erfordernis eines hitzebeständigen Untergrundes.
DE102012011793A1 (de) 2012-06-15 2013-12-19 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung eines Quarzglastiegels
SG11201508512PA (en) * 2013-05-23 2015-12-30 Applied Materials Inc A coated liner assembly for a semiconductor processing chamber
TWI733723B (zh) 2015-12-18 2021-07-21 德商何瑞斯廓格拉斯公司 不透明石英玻璃體的製備
US11299417B2 (en) 2015-12-18 2022-04-12 Heraeus Quarzglas Gmbh & Co. Kg Preparation of a quartz glass body in a melting crucible of refractory metal
CN108698892A (zh) 2015-12-18 2018-10-23 贺利氏石英玻璃有限两合公司 从二氧化硅颗粒制备石英玻璃体
TWI808933B (zh) 2015-12-18 2023-07-21 德商何瑞斯廓格拉斯公司 石英玻璃體、二氧化矽顆粒、光導、施照體、及成型體及其製備方法
CN108698888A (zh) 2015-12-18 2018-10-23 贺利氏石英玻璃有限两合公司 在石英玻璃制备中作为中间物的经碳掺杂的二氧化硅颗粒的制备
WO2017103153A1 (de) 2015-12-18 2017-06-22 Heraeus Quarzglas Gmbh & Co. Kg Glasfasern und vorformen aus quarzglas mit geringem oh-, cl- und al-gehalt
CN108698890A (zh) 2015-12-18 2018-10-23 贺利氏石英玻璃有限两合公司 利用在熔融烘箱中的露点监测制备石英玻璃体
KR20180095619A (ko) 2015-12-18 2018-08-27 헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지 실리카 유리 제조 동안 규소 함량의 증가
KR20180095880A (ko) 2015-12-18 2018-08-28 헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지 합성 석영 유리 결정립의 제조
CN108698894A (zh) 2015-12-18 2018-10-23 贺利氏石英玻璃有限两合公司 在多腔式烘箱中制备石英玻璃体
CN105861972A (zh) * 2016-04-15 2016-08-17 航天材料及工艺研究所 一种氧化铬-氧化钛基高温高发射率涂层及其制备方法
JP6681303B2 (ja) * 2016-09-13 2020-04-15 クアーズテック株式会社 石英ガラスルツボ及びその製造方法
CN108531980B (zh) * 2018-05-29 2020-12-11 宁夏富乐德石英材料有限公司 改良石英坩埚及其制作方法
JP7157932B2 (ja) * 2019-01-11 2022-10-21 株式会社Sumco シリカガラスルツボの製造装置および製造方法
WO2022131047A1 (ja) * 2020-12-18 2022-06-23 株式会社Sumco 石英ガラスルツボ及びその製造方法並びにシリコン単結晶の製造方法
CN115557710B (zh) * 2022-11-10 2025-09-16 浙江美晶新材料股份有限公司 一种单晶石英坩埚喷涂装置

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Also Published As

Publication number Publication date
WO2002092525A1 (de) 2002-11-21
CN1498196A (zh) 2004-05-19
NO20034212D0 (no) 2003-09-22
KR100837476B1 (ko) 2008-06-12
EP1370498A1 (de) 2003-12-17
NO20034212L (no) 2003-11-05
KR20030093256A (ko) 2003-12-06
DE50201295D1 (de) 2004-11-18
DE10114698A1 (de) 2002-09-26
CN1239423C (zh) 2006-02-01
EP1370498B1 (de) 2004-10-13
US20040115440A1 (en) 2004-06-17
JP2004531449A (ja) 2004-10-14

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