KR100805134B1 - 감광성 수지 조성물, 이를 사용한 패턴제조법 및 전자부품 - Google Patents

감광성 수지 조성물, 이를 사용한 패턴제조법 및 전자부품 Download PDF

Info

Publication number
KR100805134B1
KR100805134B1 KR1020037003009A KR20037003009A KR100805134B1 KR 100805134 B1 KR100805134 B1 KR 100805134B1 KR 1020037003009 A KR1020037003009 A KR 1020037003009A KR 20037003009 A KR20037003009 A KR 20037003009A KR 100805134 B1 KR100805134 B1 KR 100805134B1
Authority
KR
South Korea
Prior art keywords
photosensitive resin
resin composition
photosensitive
group
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020037003009A
Other languages
English (en)
Korean (ko)
Other versions
KR20040004370A (ko
Inventor
나고야도모히로
마쯔우라히데까즈
시미즈다께히로
Original Assignee
히다찌 가세이 고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001202459A external-priority patent/JP4716073B2/ja
Priority claimed from JP2001202458A external-priority patent/JP4711100B2/ja
Priority claimed from JP2002085768A external-priority patent/JP3941556B2/ja
Priority claimed from JP2002085769A external-priority patent/JP3941557B2/ja
Application filed by 히다찌 가세이 고오교 가부시끼가이샤 filed Critical 히다찌 가세이 고오교 가부시끼가이샤
Publication of KR20040004370A publication Critical patent/KR20040004370A/ko
Application granted granted Critical
Publication of KR100805134B1 publication Critical patent/KR100805134B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/107—Polyamide or polyurethane

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Materials For Photolithography (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Graft Or Block Polymers (AREA)
KR1020037003009A 2001-07-03 2002-07-03 감광성 수지 조성물, 이를 사용한 패턴제조법 및 전자부품 Expired - Fee Related KR100805134B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2001202459A JP4716073B2 (ja) 2001-07-03 2001-07-03 感光性樹脂組成物、これを用いたパターン製造法及び電子部品
JPJP-P-2001-00202458 2001-07-03
JPJP-P-2001-00202459 2001-07-03
JP2001202458A JP4711100B2 (ja) 2001-07-03 2001-07-03 感光性樹脂組成物、パターン製造方法及び電子部品
JP2002085768A JP3941556B2 (ja) 2002-03-26 2002-03-26 感光性ポリアミドイミド樹脂組成物、パターン製造法及び電子部品
JPJP-P-2002-00085769 2002-03-26
JP2002085769A JP3941557B2 (ja) 2002-03-26 2002-03-26 感光性ポリアミドイミド樹脂組成物、パターン製造法及び電子部品
JPJP-P-2002-00085768 2002-03-26
PCT/JP2002/006733 WO2003005127A1 (en) 2001-07-03 2002-07-03 Photosensitive resin composition, process of forming patterns with the same, and electronic components

Publications (2)

Publication Number Publication Date
KR20040004370A KR20040004370A (ko) 2004-01-13
KR100805134B1 true KR100805134B1 (ko) 2008-02-21

Family

ID=27482395

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037003009A Expired - Fee Related KR100805134B1 (ko) 2001-07-03 2002-07-03 감광성 수지 조성물, 이를 사용한 패턴제조법 및 전자부품

Country Status (5)

Country Link
US (1) US6849385B2 (enExample)
KR (1) KR100805134B1 (enExample)
CN (1) CN100347611C (enExample)
TW (1) TWI307822B (enExample)
WO (1) WO2003005127A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268730A (ja) * 2004-03-22 2005-09-29 Toshiba Corp 半導体装置
TWI392962B (zh) * 2005-02-14 2013-04-11 Shinetsu Chemical Co Photosensitive resin composition and method for producing the same
JPWO2006134744A1 (ja) * 2005-06-17 2009-01-08 株式会社村田製作所 電子部品の製造方法
TWI383251B (zh) * 2008-01-16 2013-01-21 Eternal Chemical Co Ltd 感光型聚醯亞胺
US9217921B2 (en) * 2009-06-02 2015-12-22 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicon having sulfide bond
KR101010036B1 (ko) * 2009-08-28 2011-01-21 주식회사 엘지화학 신규한 폴리아믹산, 이를 포함하는 감광성 수지 조성물 및 이로부터 제조된 드라이 필름
US9751986B2 (en) 2011-12-15 2017-09-05 Fujifilm Hunt Chemicals Us, Inc. Low toxicity solvent system for polyamideimide resins and solvent system manufacture
EP2821447B1 (en) * 2012-02-06 2018-10-31 Dnp Fine Chemicals Co., Ltd. Pigment dispersion liquid for inkjet inks, active energy beam-curable inkjet ink, and print
EP2690124B1 (en) * 2012-07-27 2015-09-16 Samsung Electronics Co., Ltd Composition Comprising Polyimide Block Copolymer And Inorganic Particles, Method Of Preparing The Same, Article Including The Same, And Display Device Including The Article
US9815941B2 (en) * 2014-04-17 2017-11-14 Cymer-Dayton, Llc Low toxicity solvent system for polyamdieimide and polyamide amic acid resin manufacture
US9725617B2 (en) * 2014-04-17 2017-08-08 Fujifilm Hunt Chemicals U.S.A., Inc. Low toxicity solvent system for polyamideimide and polyamide amic acid resin coating
JP6813565B2 (ja) * 2015-07-22 2021-01-13 サン ケミカル コーポレイション プリント回路基板用インク
US11086219B2 (en) 2016-03-30 2021-08-10 Toray Industries, Inc. Negative-type photosensitive resin composition, cured film, display device that includes the cured film, and production method therefor
KR102412726B1 (ko) * 2020-11-12 2022-06-27 한국재료연구원 운모를 포함하는 광중합용 혼합물의 제조방법 및 이를 이용한 운모를 포함하는 조형물의 제조방법

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63318549A (ja) * 1987-06-22 1988-12-27 Hitachi Ltd 耐熱感光性重合体組成物
JPH01275633A (ja) * 1988-04-27 1989-11-06 Central Glass Co Ltd 芳香族ポリアミド樹脂およびその製造法およびこれを用いた耐熱性感光材料
JPH03179025A (ja) * 1989-01-18 1991-08-05 Chisso Corp 感光性耐熱重合体の製造方法
JPH03274557A (ja) * 1990-03-26 1991-12-05 Sumitomo Bakelite Co Ltd 感光性樹脂組成物及びパターン形成方法
JPH09146274A (ja) * 1995-11-27 1997-06-06 Sumitomo Bakelite Co Ltd 感光性樹脂組成物及びそのパターン形成方法
JPH09329893A (ja) * 1996-06-10 1997-12-22 Sumitomo Bakelite Co Ltd 感光性樹脂組成物
JPH1020499A (ja) * 1996-07-05 1998-01-23 Sumitomo Bakelite Co Ltd 感光性樹脂組成物及びそのパターン形成方法
JPH1152572A (ja) * 1997-08-08 1999-02-26 Fujitsu Ltd 感光性樹脂組成物及びそれを用いたパターン形成方法
JP2000273172A (ja) * 1999-03-19 2000-10-03 Hitachi Chemical Dupont Microsystems Ltd ポリアミド酸エステル、その製造法、感光性樹脂組成物、それを用いたパターン製造法及び電子部品
JP2001060005A (ja) * 1999-06-15 2001-03-06 Hitachi Chemical Dupont Microsystems Ltd 感光性ポリイミド前駆体組成物及びそれを用いたパターンの製造法並びに電子部品

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1228515B (it) * 1988-03-03 1991-06-20 Central Glass Co Ltd Resine poliammidi aromatiche resistenti al calore e fotosensibili e metodo per la loro preparazione
JP2626696B2 (ja) * 1988-04-11 1997-07-02 チッソ株式会社 感光性重合体
US5652317A (en) * 1996-08-16 1997-07-29 Hoechst Celanese Corporation Antireflective coatings for photoresist compositions
EP1021479B1 (en) * 1997-09-25 2002-07-17 Rolic AG Photocrosslinkable polyimides

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63318549A (ja) * 1987-06-22 1988-12-27 Hitachi Ltd 耐熱感光性重合体組成物
JPH01275633A (ja) * 1988-04-27 1989-11-06 Central Glass Co Ltd 芳香族ポリアミド樹脂およびその製造法およびこれを用いた耐熱性感光材料
JPH03179025A (ja) * 1989-01-18 1991-08-05 Chisso Corp 感光性耐熱重合体の製造方法
JPH03274557A (ja) * 1990-03-26 1991-12-05 Sumitomo Bakelite Co Ltd 感光性樹脂組成物及びパターン形成方法
JPH09146274A (ja) * 1995-11-27 1997-06-06 Sumitomo Bakelite Co Ltd 感光性樹脂組成物及びそのパターン形成方法
JPH09329893A (ja) * 1996-06-10 1997-12-22 Sumitomo Bakelite Co Ltd 感光性樹脂組成物
JPH1020499A (ja) * 1996-07-05 1998-01-23 Sumitomo Bakelite Co Ltd 感光性樹脂組成物及びそのパターン形成方法
JPH1152572A (ja) * 1997-08-08 1999-02-26 Fujitsu Ltd 感光性樹脂組成物及びそれを用いたパターン形成方法
JP2000273172A (ja) * 1999-03-19 2000-10-03 Hitachi Chemical Dupont Microsystems Ltd ポリアミド酸エステル、その製造法、感光性樹脂組成物、それを用いたパターン製造法及び電子部品
JP2001060005A (ja) * 1999-06-15 2001-03-06 Hitachi Chemical Dupont Microsystems Ltd 感光性ポリイミド前駆体組成物及びそれを用いたパターンの製造法並びに電子部品

Also Published As

Publication number Publication date
TWI307822B (enExample) 2009-03-21
WO2003005127A1 (en) 2003-01-16
US20040180286A1 (en) 2004-09-16
US6849385B2 (en) 2005-02-01
CN100347611C (zh) 2007-11-07
KR20040004370A (ko) 2004-01-13
CN1522388A (zh) 2004-08-18

Similar Documents

Publication Publication Date Title
KR102803377B1 (ko) 감광성 수지 조성물, 폴리이미드 경화막, 및 이들의 제조 방법
JP7481548B2 (ja) 樹脂組成物、及び硬化膜の製造方法
KR100805134B1 (ko) 감광성 수지 조성물, 이를 사용한 패턴제조법 및 전자부품
JPH075688A (ja) ｉ線照射によるレリーフ構造体の製造方法
KR0147279B1 (ko) 감광성 수지 조성물
EP0662637A1 (en) Photosensitive polyimide precursors
KR0147307B1 (ko) 감광성 수지 조성물 및 이를 사용한 반도체 장치
CN116256946A (zh) 感光性树脂组合物、固化浮雕图案的制造方法和半导体装置
JP3941556B2 (ja) 感光性ポリアミドイミド樹脂組成物、パターン製造法及び電子部品
KR102781673B1 (ko) 폴리이미드 전구체, 수지 조성물, 감광성 수지 조성물, 패턴 경화막의 제조 방법, 경화막, 층간 절연막, 커버 코트층, 표면 보호막 및 전자 부품
JP4329182B2 (ja) アルカリネガ現像型感光性樹脂組成物、パターンの製造法及び電子部品
JP3342299B2 (ja) 感光性樹脂組成物
JP3941557B2 (ja) 感光性ポリアミドイミド樹脂組成物、パターン製造法及び電子部品
JP2003248309A (ja) 感光性樹脂組成物、これを用いたパターン製造法及び電子部品
JP4517640B2 (ja) 耐熱性感光性ポリイミド前駆体組成物及びそれを用いたパターン製造方法並びに電子部品
JPH0827538B2 (ja) 感光性樹脂組成物
JP4711100B2 (ja) 感光性樹脂組成物、パターン製造方法及び電子部品
JP3132736B2 (ja) 感光性樹脂の製造方法
JP2003295431A (ja) 感光性樹脂組成物およびその製造方法
JP4716073B2 (ja) 感光性樹脂組成物、これを用いたパターン製造法及び電子部品
JP3383548B2 (ja) 感光性重合体組成物およびその製造方法
JPH09188762A (ja) 感光性ポリイミド前駆体の製造方法、重合体のアミド化方法および重合体のアミド化触媒
JP2004271801A (ja) 感光性樹脂組成物およびその製造方法
JPH09146274A (ja) 感光性樹脂組成物及びそのパターン形成方法
WO2025243483A1 (ja) 樹脂組成物、硬化物、硬化物の製造方法、及び電子部品

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20120206

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20130214

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20130214

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000