KR100802682B1 - 가스 분배 장치 및 그 가스 분배 장치를 포함하는 챔버 - Google Patents
가스 분배 장치 및 그 가스 분배 장치를 포함하는 챔버 Download PDFInfo
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- KR100802682B1 KR100802682B1 KR1020060108004A KR20060108004A KR100802682B1 KR 100802682 B1 KR100802682 B1 KR 100802682B1 KR 1020060108004 A KR1020060108004 A KR 1020060108004A KR 20060108004 A KR20060108004 A KR 20060108004A KR 100802682 B1 KR100802682 B1 KR 100802682B1
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- 238000009826 distribution Methods 0.000 claims abstract description 108
- 239000000725 suspension Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims description 41
- 238000009413 insulation Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 148
- 239000000758 substrate Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 125000006850 spacer group Chemical group 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000008602 contraction Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000011324 bead Substances 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920002449 FKM Polymers 0.000 description 1
- 240000001549 Ipomoea eriocarpa Species 0.000 description 1
- 235000005146 Ipomoea eriocarpa Nutrition 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 241000894007 species Species 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49428—Gas and water specific plumbing component making
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
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Abstract
Description
Claims (12)
- 플라즈마 챔버로서,하나 이상의 가스 유입 오리피스를 구비한 가스 유입 매니폴드 상부벽을 포함하는 챔버벽;하나 이상의 가스 배출 오리피스를 갖는 가스 분배판;제 1 시이트를 포함하는 제 1 측벽; 및제 2 시이트를 포함하는 제 2 측벽을 포함하며,상기 제 1 시이트는 제 1 단부, 제 2 단부 및 상기 제 1 시이트의 제 1 단부로부터 상기 제 1 시이트의 제 2 단부로 연장하는 에지를 가지며,상기 제 2 시이트는 제 1 단부, 제 2 단부 및 상기 제 2 시이트의 제 1 단부로부터 상기 제 2 시이트의 제 2 단부로 연장하는 에지를 가지며,상기 각각의 측벽의 제 1 단부는 상기 가스 분배판에 연결되며;상기 가스 분배판을 상기 가스 유입 매니폴드 상부벽 아래쪽에 현가하도록, 상기 각각의 측벽의 제 2 단부는 상기 가스 유입 매니폴드 상부벽에 연결되며;상기 제 1 시이트는 상기 제 1 시이트의 제 1 단부와 상기 제 1 시이트의 제 2 단부 사이에서 연장하는 제 1 굽힘선을 따른 제 1 각도의 굽힘부를 포함하여, 상기 제 1 시이트의 측단부가 상기 제 1 시이트의 상기 제 1 굽힘선과 상기 에지 사이에서 연장하며,상기 제 2 시이트는 상기 제 2 시이트의 제 1 단부와 상기 제 2 시이트의 제 2 단부 사이에서 연장하는 제 2 굽힘선을 따른 제 2 각도의 굽힘부를 포함하여, 상기 제 2 시이트의 측단부가 상기 제 2 시이트의 상기 제 2 굽힘선과 상기 에지 사이에서 연장하며, 그리고상기 제 1 시이트의 에지가 상기 제 2 시이트의 에지에 인접하도록 그리고 상기 제 1 시이트의 측단부가 상기 제 2 시이트의 측단부와 동일 평면 상에 있도록 상기 제 1 및 제 2 측벽이 위치되는,플라즈마 챔버.
- 제 1항에 있어서,상기 제 1 각도 및 제 2 각도 모두는 45도인,플라즈마 챔버.
- 플라즈마 챔버로서,하나 이상의 가스 유입 오리피스를 구비한 가스 유입 매니폴드 상부벽을 포함하는 챔버벽;하나 이상의 가스 배출 오리피스를 갖는 가스 분배판;제 1 측벽 및 제 2 측벽을 포함한 다수의 측벽을 구비하는 현가부; 및내부 부재 및 외부 부재 모두를 양분하는 긴 접합부를 따라 서로 결합된 내부 부재 및 외부 부재를 갖는 커버를 포함하며,(ⅰ) 상기 각각의 측벽은 제 1 단부, 제 2 단부 및 상기 측벽의 제 1 단부와 제 2 단부 사이에서 연장하는 에지를 포함하며,(ⅱ) 상기 제 1 측벽의 에지와 상기 제 2 측벽의 에지가 서로 인접하고 갭에 의해 분리되도록, 상기 각각의 측벽의 제 1 단부는 상기 가스 분배판에 연결되며, 그리고(ⅲ) 상기 가스 분배판을 상기 가스 유입 매니폴드 상부벽 아래쪽에 현가하도록, 상기 각각의 측벽의 제 2 단부는 상기 가스 유입 매니폴드 상부벽에 연결되며,상기 커버의 접합부가 상기 갭 내에 있도록 그리고 상기 현가부의 제 1 및 제 2 측벽의 일부분들이 상기 커버의 내부 부재 및 외부 부재 사이에 있도록 상기 커버가 위치되는,플라즈마 챔버.
- 제 3항에 있어서,상기 커버의 내부 및 외부 부재는 상기 갭을 통한 가스의 유동을 방지하도록 서로에 대해 그리고 상기 제 1 측벽 및 제 2 측벽에 대해 충분히 인접하게 위치되는,플라즈마 챔버.
- 플라즈마 챔버로서,하나 이상의 가스 유입 오리피스를 구비한 가스 유입 매니폴드 상부벽을 포함하는 챔버벽;하나 이상의 가스 배출 오리피스를 갖는 가스 분배판;제 1 측벽 및 제 2 측벽을 포함한 다수의 측벽을 구비하는 현가부; 및횡방향 부재에 의해 서로 결합된 제 1 평행 부재와 제 2 평행 부재를 갖는 커버를 포함하며,(ⅰ) 상기 각각의 측벽은 제 1 단부, 제 2 단부 및 상기 측벽의 제 1 단부와 제 2 단부 사이에서 연장하는 에지를 포함하며,(ⅱ) 상기 제 1 측벽의 에지와 상기 제 2 측벽의 에지가 서로 인접하고 갭에 의해 분리되도록, 상기 각각의 측벽의 제 1 단부는 상기 가스 분배판에 연결되며, 그리고(ⅲ) 상기 가스 분배판을 상기 가스 유입 매니폴드 상부벽 아래쪽에 현가하도록, 상기 각각의 측벽의 제 2 단부는 상기 가스 유입 매니폴드 상부벽에 연결되며,상기 갭이 상기 커버의 제 1 평행 부재와 제 2 평행 부재 사이에 있도록, 상기 제 1 평행 부재와 제 2 평행 부재 각각이 상기 갭의 양쪽에 놓이도록(straddle), 그리고 상기 제 1 측벽의 일부분과 상기 제 2 측벽의 일부분이 상기 제 1 평행 부재와 제 2 평행 부재 사이에 있도록, 상기 커버가 위치되는,플라즈마 챔버.
- 제 5 항에 있어서,상기 커버의 제 1 평행 부재 및 제 2 평행 부재는 상기 갭을 통한 가스의 유동을 방지하도록 서로에 대해 그리고 상기 제 1 측벽 및 제 2 측벽에 대해 충분히 인접하게 위치되는,플라즈마 챔버.
- 가스 분배 장치로서,하나 이상의 가스 배출 오리피스에 의해 천공된 가스 분배판;제 1 시이트를 구비하는 제 1 측벽; 및제 2 시이트를 구비하는 제 2 측벽을 포함하며,상기 제 1 시이트는 제 1 단부, 제 2 단부, 및 상기 제 1 시이트의 제 1 단부로부터 상기 제 1 시이트의 제 2 단부로 연장하는 에지를 가지며,상기 제 2 시이트는 제 1 단부, 제 2 단부 및 상기 제 2 시이트의 제 1 단부로부터 상기 제 2 시이트의 제 2 단부로 연장하는 에지를 가지며,상기 각 측벽의 제 1 단부는 상기 가스 분배판에 연결되며;상기 제 1 시이트는 상기 제 1 시이트의 제 1 단부와 상기 제 1 시이트의 제 2 단부 사이에서 연장하는 제 1 굽힘선을 따른 제 1 각도의 굽힘부를 포함하여, 상기 제 1 시이트의 측단부가 상기 제 1 시이트의 상기 제 1 굽힘선과 상기 에지 사이에서 연장하며,상기 제 2 시이트는 상기 제 2 시이트의 제 1 단부와 상기 제 2 시이트의 제 2 단부 사이에서 연장하는 제 2 굽힘선을 따른 제 2 각도의 굽힘부를 포함하여, 상기 제 2 시이트의 측단부가 상기 제 2 시이트의 상기 제 2 굽힘선과 상기 에지 사이에서 연장하며, 그리고상기 제 1 시이트의 에지가 상기 제 2 시이트의 에지에 인접하도록 그리고 상기 제 1 시이트의 측단부가 상기 제 2 시이트의 측단부와 동일 평면 상에 있도록 상기 제 1 및 제 2 측벽이 위치되는,가스 분배 장치.
- 제 7항에 있어서,상기 제 1 각도 및 제 2 각도 모두 45도인,가스 분배 장치.
- 가스 분배 장치로서,하나 이상의 가스 배출 오리피스에 의해 천공된 가스 분배판;제 1 측벽과 제 2 측벽을 포함한 다수의 측벽을 구비하는 현가부; 및내부 부재 및 외부 부재 모두를 양분하는 긴 접합부를 따라 서로 결합된 내부 부재 및 외부 부재를 갖는 커버를 포함하며,(ⅰ) 상기 각각의 측벽은 제 1 단부, 제 2 단부 및 상기 측벽의 제 1 단부와 제 2 단부 사이에서 연장하는 에지를 포함하며,(ⅱ) 상기 각각의 측벽의 제 1 단부는 상기 제 1 측벽의 에지와 상기 제 2 측벽의 에지가 서로 인접하고 갭에 의해 분리되도록 상기 가스 분배판에 연결되며, 그리고상기 커버의 접합부가 상기 갭 내에 있도록 그리고 상기 현가부의 제 1 및 제 2 측벽의 일부분들이 상기 커버의 내부 부재 및 외부 부재 사이에 있도록 상기 커버가 위치되는,가스 분배 장치.
- 제 9항에 있어서,상기 커버의 내부 부재 및 외부 부재는 상기 갭을 통한 가스의 유동을 방지하도록 서로에 대해 그리고 상기 제 1 측벽 및 제 2 측벽에 대해 충분히 인접하게 위치되는,가스 분배 장치.
- 가스 분배 장치로서,하나 이상의 가스 배출 오리피스에 의해 천공된 가스 분배판;제 1 측벽과 제 2 측벽을 포함한 다수의 측벽을 구비하는 현가부; 및횡방향 부재에 의해 서로 결합된 제 1 평행 부재와 제 2 평행 부재를 갖는 커버를 포함하며,(ⅰ) 상기 각각의 측벽은 제 1 단부, 제 2 단부 및 상기 측벽의 제 1 단부와 제 2 단부 사이에서 연장하는 에지를 포함하며,(ⅱ) 상기 각각의 측벽의 제 1 단부는 상기 제 1 측벽의 에지와 상기 제 2 측벽의 에지가 서로 인접하고 갭에 의해 분리되도록 상기 가스 분배판에 연결되며, 그리고상기 갭이 상기 커버의 제 1 평행 부재와 제 2 평행 부재 사이에 있도록, 상기 제 1 평행 부재와 제 2 평행 부재 각각이 상기 갭의 양쪽에 놓이도록(straddle), 그리고 상기 제 1 측벽의 일부분과 상기 제 2 측벽의 일부분이 상기 제 1 평행 부재와 제 2 평행 부재 사이에 있도록, 상기 커버가 위치되는,가스 분배 장치.
- 제 11항에 있어서,상기 커버의 제 1 평행 부재 및 제 2 평행 부재는 상기 갭을 통한 가스의 유동을 방지하도록 서로에 대해 그리고 상기 제 1 측벽 및 제 2 측벽에 대해 충분히 인접하게 위치되는,가스 분배 장치.
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Also Published As
Publication number | Publication date |
---|---|
US6823589B2 (en) | 2004-11-30 |
TW477830B (en) | 2002-03-01 |
KR100882072B1 (ko) | 2009-02-10 |
KR20100033988A (ko) | 2010-03-31 |
EP1118693A3 (en) | 2001-10-17 |
US7017269B2 (en) | 2006-03-28 |
US20030066607A1 (en) | 2003-04-10 |
KR20080108208A (ko) | 2008-12-12 |
JP2001284271A (ja) | 2001-10-12 |
KR20060121781A (ko) | 2006-11-29 |
JP4430253B2 (ja) | 2010-03-10 |
DE60125608D1 (de) | 2007-02-15 |
KR20010076391A (ko) | 2001-08-11 |
US20040118345A1 (en) | 2004-06-24 |
KR100737228B1 (ko) | 2007-07-09 |
KR20050033573A (ko) | 2005-04-12 |
EP1118693B1 (en) | 2007-01-03 |
KR20060122798A (ko) | 2006-11-30 |
KR20110004343A (ko) | 2011-01-13 |
DE60125608T2 (de) | 2007-11-15 |
KR101287100B1 (ko) | 2013-07-17 |
US6477980B1 (en) | 2002-11-12 |
SG87200A1 (en) | 2002-03-19 |
EP1118693A2 (en) | 2001-07-25 |
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