WO2020100400A1 - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
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- WO2020100400A1 WO2020100400A1 PCT/JP2019/035869 JP2019035869W WO2020100400A1 WO 2020100400 A1 WO2020100400 A1 WO 2020100400A1 JP 2019035869 W JP2019035869 W JP 2019035869W WO 2020100400 A1 WO2020100400 A1 WO 2020100400A1
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- Prior art keywords
- vacuum chamber
- deposition
- plate
- vacuum
- block body
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- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000001816 cooling Methods 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 230000008021 deposition Effects 0.000 claims description 54
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 239000003507 refrigerant Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 7
- 238000013459 approach Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 52
- 238000004544 sputter deposition Methods 0.000 description 30
- 239000007789 gas Substances 0.000 description 27
- 239000010408 film Substances 0.000 description 21
- 230000002401 inhibitory effect Effects 0.000 description 17
- 239000002245 particle Substances 0.000 description 15
- 230000003449 preventive effect Effects 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000002265 prevention Effects 0.000 description 10
- 239000010409 thin film Substances 0.000 description 7
- 239000002826 coolant Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000009489 vacuum treatment Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32504—Means for preventing sputtering of the vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a vacuum processing apparatus having a vacuum chamber and performing a predetermined vacuum processing on a substrate to be processed set in the vacuum chamber.
- a substrate to be processed such as a silicon wafer to a predetermined vacuum treatment in a vacuum chamber capable of forming a vacuum atmosphere.
- a vacuum treatment includes a vacuum deposition method.
- a film forming apparatus by the ion plating method, the sputtering method or the plasma CVD method, a dry etching apparatus, a vacuum heat treatment apparatus or the like is used.
- a vacuum processing apparatus (sputtering apparatus) for forming a film by a sputtering method is known from Patent Document 1, for example. This has a vacuum chamber in which a vacuum atmosphere can be formed, and a sputtering target is arranged above it. A stage on which the substrate to be processed is placed facing the target is provided in the lower part of the vacuum chamber.
- a rare gas and a reaction gas
- a vacuum chamber in a vacuum atmosphere while a single substrate to be processed is placed on the stage, and the target is used as a target.
- DC power having a negative potential or AC power having a predetermined frequency is input.
- a plasma atmosphere is formed in the vacuum chamber, the ions of the rare gas ionized in the plasma collide with the target, the target is sputtered, and the sputtered particles scattered from the target adhere to and deposit on the surface of the substrate to be processed.
- a predetermined thin film is formed according to the target species.
- the vacuum chamber is usually provided with a metal deposition preventive plate at a distance from the inner wall surface of the vacuum chamber in order to prevent the sputtered particles from adhering to the inner wall surface of the vacuum chamber.
- the deposition-inhibiting plate is composed of a fixed deposition-inhibiting plate fixedly arranged in the vacuum chamber and a movable deposition-inhibiting plate movable in one direction. Then, at the time of film formation, the fixed deposition-preventing plate and the movable deposition-preventing plate are partially overlapped, so that the sputtered particles can be prevented from adhering to the inner wall surface of the vacuum chamber.
- the movable deposition preventive plate is moved relative to the fixed deposition preventive plate to form a space between the fixed deposition preventive plate and the movable deposition preventive plate.
- the transfer robot is allowed to pass, and the substrate to be processed can be carried in and out of the stage.
- a so-called baking process is performed to heat the deposition-prevention plate to a predetermined temperature in a vacuum atmosphere prior to film formation on the substrate to be processed. It is common to carry out degassing such as.
- the deposition preventive plate is heated by the radiant heat of plasma, etc., and as the number of substrates to be processed increases, the temperature gradually increases.
- various gases oxygen, oxygen, Water vapor etc.
- a released gas is taken into the thin film during film formation, for example, the quality of the film is deteriorated, and it is necessary to suppress this as much as possible. It is conceivable that such a released gas exerts an adverse effect such as changing the etching shape even when the substrate to be processed is dry-etched by, for example, a dry etching apparatus.
- a cooling pipe is meandered and attached to the back side of the deposition prevention plate, or a refrigerant circulation path is formed in the deposition prevention plate having a predetermined thickness, and the refrigerant is circulated in the cooling pipe or the circulation path.
- It is generally known to cool an adhesion-preventing plate see, for example, Patent Document 2).
- an adhesion-preventing plate has a complicated structure and is expensive.
- the pipe from the chiller unit arranged outside the vacuum chamber is connected to the cooling pipe or the circulation path through a joint or the like, and Since it is necessary to also move the pipes themselves in the vacuum chamber with the movement, there is a problem that the vacuum treatment device is damaged and the risk of water leakage in the vacuum chamber increases.
- the present invention has been made in view of the above points, and an object thereof is to provide a vacuum processing apparatus capable of cooling a movable deposition-inhibitory plate provided in a vacuum chamber with a simple configuration. ..
- a vacuum processing apparatus of the present invention which has a vacuum chamber and performs a predetermined vacuum processing on a substrate to be processed set in the vacuum chamber is A metal block body provided on the inner wall surface of the vacuum chamber, which is composed of a fixed deposition plate which is fixedly arranged in the vacuum chamber and a movable deposition plate which is movable in one direction. Further, a cooling means for cooling the block body is further provided, and the top surface of the block body is close to or in contact with the movable deposition-inhibitory plate at a processing position of the movable deposition-inhibitory plate that performs a predetermined vacuum treatment on the film formation substrate. The feature is that they are in contact with each other.
- the movable deposition-inhibitory plate at the processing position can be radiatively cooled from the block body and contacted with the deposition-inhibitory plate. It can be cooled by the heat transfer through, and as a result, it is possible to prevent the movable deposition-inhibitory plate from being heated to a predetermined temperature or higher during the vacuum processing.
- the block body since the block body is fixedly arranged on the inner wall surface of the vacuum chamber, the risk of causing water leakage in the vacuum chamber, which may damage the vacuum treatment apparatus, can be minimized.
- the wall surface of the vacuum chamber is provided with a jacket for circulating a heating medium for baking which is performed prior to a predetermined vacuum processing in the vacuum chamber. Therefore, in the present invention, the cooling means is composed of a jacket provided on the wall surface of the vacuum chamber, and the block body is cooled by heat transfer from the wall surface of the vacuum chamber when the refrigerant is circulated through the jacket. It is preferable to adopt a configuration. According to this, the block body can be cooled by the heat transfer from the wall surface of the vacuum chamber by using the existing jacket and circulating the refrigerant through the jacket. Therefore, parts such as pipes for cooling the block body can be omitted, and the risk of water leakage in the vacuum chamber can be eliminated. In this case, it is possible to adopt a configuration further including a heat conductive sheet interposed between the inner wall surface of the vacuum chamber and the block body.
- FIG. 1 The schematic cross section which shows the sputtering device of embodiment of this invention. Sectional drawing which expands and shows a part of FIG. (A) And (b) is a fragmentary sectional view of the sputtering device which concerns on a modification and was made to correspond to FIG. 1.
- a vacuum processing apparatus is a magnetron-type sputtering apparatus
- a substrate to be processed is a silicon wafer (hereinafter referred to as “substrate Sw”), and a predetermined thin film is formed on the surface of the substrate Sw is taken as an example.
- substrate Sw silicon wafer
- An embodiment of the vacuum processing apparatus of the present invention will be described. In the following, the terms indicating directions are based on the installation posture of the sputtering apparatus SM as the vacuum processing apparatus shown in FIG.
- SM is the sputtering device of this embodiment.
- the sputtering device SM includes a vacuum chamber 1.
- the side wall and the lower wall of the vacuum chamber 1 are provided with a jacket 11 which is connected to a circulation unit for a heat medium or a refrigerant (not shown) through a pipe.
- the side wall and the lower wall of No. 1 can be heated or cooled.
- a cathode unit 2 is detachably attached to the upper surface opening of the vacuum chamber 1.
- the cathode unit 2 is composed of a target 21 and a magnet unit 22 arranged above the target 21.
- a target 21 a known target such as aluminum, copper, titanium or alumina is used depending on the thin film to be formed on the surface of the substrate Sw.
- the target 21 is mounted on the backing plate 21a, with its sputter surface 21b facing downward, through the insulator 31 also serving as a vacuum seal provided on the upper wall of the vacuum chamber 1 and above the vacuum chamber 1. Attached to.
- the target 21 is connected to an output 21d from a sputtering power source 21c including a DC power source and an AC power source according to the target type.
- a predetermined power having a negative potential or a high frequency with a predetermined frequency is used. Power can be turned on.
- the magnet unit 22 generates a magnetic field in the space below the sputtering surface 21b of the target 21, captures the electrons and the like that are ionized below the sputtering surface 21b during sputtering, and efficiently ionizes the sputtered particles scattered from the target 21. Since it has a closed magnetic field or cusp magnetic field structure, detailed description thereof is omitted here.
- a stage 4 is arranged below the vacuum chamber 1 so as to face the target 21.
- the stage 4 is composed of a metal base 41 having a cylindrical contour, which is installed via an insulator 32 provided in the lower part of the vacuum chamber 1, and a chuck plate 42 adhered to the upper surface of the base 41.
- the chuck plate 42 is made of, for example, aluminum nitride and has an outer diameter slightly smaller than the upper surface of the base 41, and although not particularly illustrated and described, an electrode for an electrostatic chuck is embedded therein. Then, when a voltage is applied to the electrodes from a chuck power supply (not shown), the substrate Sw is electrostatically attracted to the upper surface of the chuck plate 42.
- the base 41 also has a coolant circulation path 41a for circulating a coolant from a chiller unit (not shown).
- a hot plate 43 made of, for example, aluminum nitride is interposed between the base 41 and the chuck plate 42, and can be heated to a predetermined temperature (for example, 300 ° C. to 500 ° C.) by energization.
- a heater may be built in the chuck plate 42 and the chuck plate 42 and the hot plate 43 may be integrally formed.
- the substrate Sw can be controlled within a predetermined temperature range of room temperature or higher by heating with the hot plate 43 and cooling the base 41 by circulating the coolant to the coolant circulation path 41a.
- a gas pipe 5 for introducing a sputtering gas is connected to the side wall of the vacuum chamber 1, and the gas pipe 5 communicates with a gas source (not shown) via a mass flow controller 51.
- the sputtering gas includes not only a rare gas such as argon gas introduced when plasma is formed in the vacuum chamber 1, but also a reactive gas such as oxygen gas or nitrogen gas.
- the lower wall of the vacuum chamber 1 is also connected to an exhaust pipe 62 that communicates with a vacuum pump 61 composed of a turbo-molecular pump, a rotary pump, or the like.
- the vacuum chamber 1 can be maintained at a predetermined pressure in the introduced state.
- a platen ring 7 functioning as an adhesion-preventing plate is provided so as to cover the base 41 exposed to the outside in the radial direction, and by extension, the upper surface portion 43a of the hot plate 43.
- the platen ring 7 is made of a known material such as alumina or stainless steel, and is provided via an insulator 33 provided on the upper surface of the base 41.
- the upper surface of the platen ring 7 is made substantially flush with the upper surface of the chuck plate 42.
- a metal deposition prevention plate 8 for preventing the sputtered particles as a substance generated by the sputtering of the target 21 from adhering to the inner wall surface of the vacuum chamber 1.
- the deposition-inhibitory plate 8 is composed of an upper deposition-inhibition plate 81 and a lower deposition-inhibition plate 82, each of which is made of a known material such as alumina or stainless steel.
- the upper deposition-inhibition plate 81 is a fixed deposition-inhibitory plate.
- the lower deposition prevention plate 82 constitutes a movable deposition prevention plate.
- the upper deposition preventing plate 81 has a tubular contour and is suspended via a locking portion 12 provided on the upper portion of the vacuum chamber 1.
- the lower deposition-inhibiting plate 82 also has a tubular contour, and an upstanding wall portion 82a that is erected upward is formed at the free end on the radially outer side thereof.
- a drive shaft 83a which extends from the lower wall of the vacuum chamber 1 and extends from a drive unit 83 such as a motor or an air cylinder, is connected to the lower deposition-inhibitory plate 82.
- the vacuum chamber 1 is movable in the vertical direction.
- the lower end portion of the upper attachment plate 81 and the upper end portion of the standing wall portion 82a vertically overlap each other.
- a so-called labyrinth seal is formed by the lower end portion of the upper deposition-inhibiting plate 81 and the upper end portion of the standing wall portion 82a so that the sputtered particles are deposited on the inner wall surface of the vacuum chamber 1 during film formation by sputtering. To prevent the adhesion of.
- a predetermined space is formed below the lower deposition prevention plate 82 at a position (conveyance position) where the drive unit 83 moves (moves up) the lower deposition protection plate 82 from the processing position to a predetermined height position.
- a delivery opening facing the above space which is provided with a gate valve, is formed on the sidewall of the vacuum chamber 1, and the delivery opening opens the stage 4 by a vacuum transfer robot (not shown). The substrate Sw can be delivered and received.
- the flat portion 82b of the lower deposition-inhibitory plate 82 extending orthogonally to the vertical direction is sized so that the inner portion in the radial direction (the horizontal direction in FIG. 1) faces the platen ring 7.
- An annular protrusion 82c is formed at a predetermined position on the lower surface of the flat portion 82b.
- An annular groove 71 is formed on the upper surface of the platen ring 7 so as to correspond to the protrusion 82c. Then, the lower deposition-inhibiting plate 82 is moved to the processing position by the driving means 83 (in this case, the flat portion 82b of the lower deposition-inhibiting plate 82 is against the inner wall surface of the vacuum chamber, specifically, the inner surface of the lower wall).
- a so-called labyrinth seal is formed by the protrusions 82c of the flat portion 82b and the concave groove 71 of the platen ring 7, and the so-called labyrinth seal is formed around the substrate Sw below the lower deposition preventive plate 82. It is possible to prevent the sputtered particles from wrapping around into the space inside the vacuum chamber 1.
- the film forming method will be described below by taking the case where the target is aluminum and the aluminum film is formed on the surface of the substrate Sw by the sputtering apparatus SM as an example.
- the vacuum pump 61 is operated to evacuate the airtightly held vacuum chamber 1.
- a so-called baking process is performed in which a heating medium having a predetermined temperature is circulated in the jacket 11 to heat components such as the wall surface of the vacuum chamber 1 and the platen ring 7 including the platen ring 7 to a predetermined temperature in a vacuum atmosphere. ..
- the substrate Sw is loaded onto the stage 4 by a vacuum transport robot (not shown) at the transport position of the lower deposition prevention plate 82, and the substrate W is placed on the upper surface of the chuck plate 42 of the stage 4.
- the lower deposition prevention plate 82 is moved to the processing position to prevent the sputtered particles from adhering to the inner wall of the vacuum chamber 1. Then, a predetermined voltage is applied from the chuck power supply to the electrodes for the electrostatic chuck to electrostatically adsorb the substrate Sw to the chuck plate 42. At the same time, the substrate Sw is controlled to a predetermined temperature (for example, 350 ° C.) equal to or higher than room temperature by heating by the hot plate 43 and cooling the base 41 by circulating the refrigerant to the refrigerant circulation path 41a.
- a predetermined temperature for example, 350 ° C.
- the inside of the vacuum chamber 1 is evacuated to a predetermined pressure (for example, 10 ⁇ 5 Pa), and when the substrate Sw reaches a predetermined temperature, an argon gas as a sputtering gas is supplied through the gas pipe 5 at a constant flow rate (for example, argon gas). It is introduced at a partial pressure of 0.1 Pa), and at the same time, a predetermined power (for example, 3 to 50 kW) having a negative potential is applied to the target 21 from the sputtering power source 21c.
- a predetermined pressure for example, 10 ⁇ 5 Pa
- an argon gas as a sputtering gas is supplied through the gas pipe 5 at a constant flow rate (for example, argon gas). It is introduced at a partial pressure of 0.1 Pa), and at the same time, a predetermined power (for example, 3 to 50 kW) having a negative potential is applied to the target 21 from the sputtering power source 21c.
- the upper deposition protection plate 81 and the lower deposition protection plate 82 are heated by radiant heat of plasma and the like, and gradually become higher in temperature as the number of substrates Sw to be deposited increases. .
- the lower deposition-inhibiting plate 82 is particularly easily heated. Then, when the upper deposition plate 81 and the lower deposition plate 82 (particularly, the lower deposition plate 82 located near the substrate Sw) are heated above the temperature during the baking process, sputtered particles do not adhere or accumulate.
- a cylindrical block body 9 is erected on the inner surface 13 of the lower wall of the vacuum chamber 1 so as to face the flat portion 82b of the lower deposition-inhibitory plate 82.
- the block body 9 is made of a metal having a good heat transfer characteristic such as aluminum or copper, and the height of the block body 9 up to the top surface 91 is the top surface of the block body 9 at the processing position of the lower attachment protection plate 82.
- 91 and the lower surface of the lower deposition preventing plate 82 (that is, the flat portion 82b) are sized so as to face each other with a gap.
- the vertical gap is set to 1 mm or less, preferably 0.5 mm or less.
- a heat conduction sheet 92 such as a silicon sheet or an indium sheet for improving heat transfer is interposed between the inner surface 13 of the lower wall of the vacuum chamber 1 and the block body 9. Then, during the film formation, a coolant having a predetermined temperature is circulated in the jacket 11, and the block body 9 is cooled to a predetermined temperature by heat transfer from the wall surface of the vacuum chamber 1 through the heat conductive sheet 92.
- the jacket 11 constitutes cooling means for cooling the block body 9.
- the volume of the block body 9, the area of the top surface 91 (area of the surface facing the deposition preventive plate), the relative position of the block body 9 to the deposition preventive plate 82, and the like are the temperature of the lower deposition preventive plate 82 to be cooled, and the like. It is set appropriately in consideration of.
- the lower deposition preventing plate 82 at the processing position is cooled by radiation cooling from the block body 9.
- the lower deposition-inhibitory plate 82 it is possible to prevent the lower deposition-inhibitory plate 82 from being heated to a predetermined temperature or higher during vacuum processing, and as a result, gas release due to the temperature rise of the lower deposition-inhibition plate 82 is suppressed as much as possible.
- the released gas it is possible to prevent the released gas from being taken into the thin film and causing a problem such as deterioration of the film quality.
- the block body 9 is fixedly arranged on the inner wall surface of the vacuum chamber 1, and it is possible to omit connecting a pipe for supplying a coolant, so that the sputtering device SM is damaged. The risk of water leakage in the can be reduced as much as possible.
- the existing jacket 11 provided in the vacuum chamber 1 is used, and the block body 9 can be cooled by heat transfer from the wall surface of the vacuum chamber 1 simply by circulating the refrigerant through the jacket 11.
- the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
- the temperature is particularly likely to be high, and the flat portion of the lower deposition-inhibitory plate 82 as a movable deposition-inhibitory plate that moves in the approaching and separating direction with respect to the inner surface of the lower wall of the vacuum chamber 1.
- the block body 9 is erected on the inner surface 13 of the lower wall of the vacuum chamber 1 in order to cool the flat portion 82b by using 82b as a cooling target portion
- the present invention is not limited to this, for example,
- the block body 9 can be erected on the inner surface of the side wall of the vacuum chamber 1 so that the upright wall portion 82a of the lower deposition-inhibiting plate 82 that moves along the up-down direction can be cooled.
- the cooling structure using is also effective for the fixed deposition preventing plate 81.
- the lower surface of the flat portion 82b of the lower deposition-inhibiting plate 82 faces the top surface 91 of the block body 9 with a gap at the processing position of the lower deposition-inhibiting plate 82.
- the present invention is not limited to this, and the lower surface of the flat portion 82b is brought into contact with the top surface 91 of the block body 9 at the processing position of the lower deposition-inhibitory plate 82, and heat transfer by surface contact is performed. It is also possible to cool the lower deposition preventing plate 82 with.
- sputtered particles may go around and adhere to the lower surface of the flat portion 82b.
- the lower surface of the flat portion 82b and the block body 9 may be adhered. If the top surface 91 is brought into contact with the top surface 91, there is a possibility that particles that hinder the good vacuum processing may be generated. Therefore, even if the lower protection plate 82 is repeatedly moved up and down, a gap of 1 mm or less is always formed between the lower protection plate 82 and the block body 9 at the processing position of the lower protection plate 82. It may be preferable to have a positioning mechanism.
- FIG. 3A The modification shown in FIG. 3A is provided with the positioning mechanism as described above, and specifically, a single ring-shaped guide ring 83b is provided at the upper end of each drive shaft 83a. At the same time, concave holes 83c are formed at predetermined positions on the lower surface of the guide ring 83b facing the top surface 91 of the block body 9 at intervals (for example, 120 degree intervals) in the circumferential direction.
- the top surface 91 of the block body 9 is formed stepwise so as to allow the lower deposition preventing plate 82 to move to the processing position (that is, the guide ring 83b does not interfere), and one step of the top surface 91 Positioning pins 94 are erected on the lowered upper surface portion 93 in phase with the concave holes 83c. Then, at the processing position of the lower deposition-inhibitory plate 82, the positioning pins 94 are fitted into the recessed holes 83c, so that the position between the lower deposition-inhibition plate 82 and the block body 9 is adjusted at the processing position of the lower deposition-inhibitory plate 82. A gap of 1 mm or less is always formed in the space.
- the concave hole 83c is formed at a predetermined position on the lower surface of the guide ring 83b, and the positioning pin 94 is formed on the top surface 91 of the block body 9 as an example.
- the present invention is not limited to this. ..
- positioning pins 95 are erected at predetermined positions on the top surface 91 of the block body 9 at intervals (for example, 120 ° intervals) in the circumferential direction to perform positioning.
- a recessed hole 83d may be formed at a predetermined position on the lower surface of the flat portion 82b of the lower deposition-inhibiting plate 82 in phase with the pin 95.
- the protrusion 83e is formed at a predetermined position on the lower surface of the flat portion 82b by being positioned inward of the recessed hole 83d, and the protrusion 83e is aligned with the protrusion 83e so that the protrusion 91 is formed on the top surface 91 of the block body 9.
- An annular receiving concave groove 96 for receiving 83e may be formed, and a labyrinth structure may be formed by the protrusions 83e and the receiving concave groove 96 at the processing position of the lower attachment prevention plate 82.
- the cooling means is configured by the jacket 11 provided on the wall surface of the vacuum chamber 1 and in which the refrigerant is circulated
- the present invention is not limited to this, and for example, the block body 9 may be used. It is possible to directly cool the block body 9 by forming a refrigerant circulation path inside and circulating the refrigerant through the refrigerant circulation path.
- the cryopanel that adsorbs the gas in the vacuum chamber may be arranged to face the block body 9 in the vacuum chamber 1 to cool the block body 9. Further, as shown in FIG.
- a gas passage 97 communicating with the top surface 91 of the block body 9 is formed in the block body 9, and the lower body protection plate 82 and the block body 9 are disposed at the processing position of the lower body protection plate 82. It is also possible to introduce a predetermined cooling gas, such as argon or helium, into the space between them and cool the lower deposition prevention plate 82 by heat transfer of the cooling gas. In this case, in order to surround the gas outlet of the gas passage 97 in the top surface 91 from the inside and outside in the radial direction, the projection 98 or the receiving groove 83f is formed on the top surface 91 and the lower surface of the flat portion 82b of the lower deposition-inhibiting plate 82.
- a predetermined cooling gas such as argon or helium
- Each of them may be formed individually to form a labyrinth structure with the projections 98 and the receiving concave grooves 83f to reduce the conductance of the cooling gas. Further, a sealing member (not shown) may be provided so that the lower adhesion plate 82 and The pressure in the space between the block body 9 and the block body 9 can be increased.
- the vacuum processing apparatus is the sputtering apparatus SM
- the movable deposition preventing plate is provided in the vacuum chamber.
- the present invention can also be applied.
- SM Sputtering apparatus
- 1 Vacuum chamber
- 11 Vacuum chamber
- 11 Jacket
- 4 Stage
- 41 ... Base
- 43 Hot plate
- 8 Anti-adhesion plate
- 82 Lower adhesion plate
- 9 Block body
- 92 Thermal conductive sheet
- Sw Substrate (processed substrate).
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Abstract
Description
Claims (3)
- 真空チャンバを有してこの真空チャンバ内にセットされた被処理基板に対して所定の真空処理を施す真空処理装置であって、真空チャンバ内に防着板が設けられ、防着板が真空チャンバに固定配置される固定防着板と一方向に移動自在な可動防着板とで構成されるものにおいて、
真空チャンバの内壁面に立設された金属製のブロック体と、ブロック体を冷却する冷却手段とを更に備え、被成膜基板に対して所定の真空処理を施す可動防着板の処理位置にて、ブロック体の頂面が可動防着板に近接または当接するようにしたことを特徴とする真空処理装置。 - 前記冷却手段が真空チャンバの壁面に設けたジャケットで構成され、ジャケットに冷媒を循環させたときの真空チャンバの壁面からの伝熱で前記ブロック体が冷却されるように構成したことを特徴とする請求項1または請求項2記載の真空処理装置。
- 真空チャンバの内壁面とブロック体との間に介在された熱伝導シートを更に備えることを特徴とする請求項2記載の真空処理装置。
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CN201980075427.9A CN113056572B (zh) | 2018-11-16 | 2019-09-12 | 真空处理装置 |
US17/272,861 US11923178B2 (en) | 2018-11-16 | 2019-09-12 | Vacuum processing apparatus |
KR1020217017048A KR102533330B1 (ko) | 2018-11-16 | 2019-09-12 | 진공 처리 장치 |
JP2020556638A JP7057442B2 (ja) | 2018-11-16 | 2019-09-12 | 真空処理装置 |
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