CN107408504B - 成膜装置及成膜方法 - Google Patents

成膜装置及成膜方法 Download PDF

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CN107408504B
CN107408504B CN201680001052.8A CN201680001052A CN107408504B CN 107408504 B CN107408504 B CN 107408504B CN 201680001052 A CN201680001052 A CN 201680001052A CN 107408504 B CN107408504 B CN 107408504B
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substrate
film forming
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CN107408504A (zh
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浅川庆一郎
滨口纯一
园田和广
沼田幸展
小风丰
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Ulvac Inc
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Abstract

提供一种可通过防止负电荷在蚀刻处理时在基板边缘部集中而在高纵横比的孔内面良好涂覆地形成薄膜的成膜装置。一种成膜装置(SM)，具有：配置了靶(21)的真空室(1)；在真空室内保持基板(W)的台架(4)；向靶施加规定电力的第一电源(E1)；以及向台架施加交流电力的第二电源(E2)；进行通过第一电源向靶施加电力对靶进行溅射的成膜处理；以及通过第二电源向台架施加交流电力并蚀刻在基板上形成的薄膜的蚀刻处理，基板的周围配置防护板(7c)，以台架上保持的基板的成膜面侧为上，具有在防护板上邻近基板的部分(71)与基板上面位于同一平面上的成膜位置和防护板的该部分位于基板上面的上方的蚀刻位置之间上下移动屏蔽件的驱动装置(8)。

Description

成膜装置及成膜方法
技术领域
本发明涉及一种成膜装置及成膜方法，更具体而言，涉及一种适于在具有高纵横比微孔的内面上涂覆良好地形成薄膜的成膜装置及成膜方法。
背景技术
在半导体器件的制造工序中，有在具有规定的纵横比的通孔或接触孔的内面(内壁面和底面)上形成由Ta膜构成的阻挡层的工序。随着近年来半导体器件进一步集成化和微型化，在形成Ta膜的孔中，有纵横比在3以上的高纵横比的孔。作为用于形成这种Ta膜的成膜装置，已知例如专利文献1中的装置，该装置具有：配置了靶的真空室；在真空室内保持基板的台架；向靶施加规定电力的第一电源；以及向台架施加交流电力的第二电源；进行通过第一电源向靶施加电力对靶进行溅射的成膜处理；以及通过第二电源向台架施加交流电力并蚀刻在基板上形成的薄膜的蚀刻处理。由此，对通过成膜处理在基板表面和孔底部形成的厚的Ta膜进行蚀刻，被蚀刻的Ta粒子附着在薄膜厚度薄的孔内壁面上，涂覆效果提高。
再有，在成膜处理时，为防止溅射粒子附着在真空室的内壁上或位于真空室内的部件上，在真空室内配置将靶和基板之间的空间围住的防护板。并且，防护板上配置在台架周围的部分一般设置为与基板上面在同一平面上且邻近基板，以便溅射粒子不会经该部分与基板之间的间隙绕到台架下方的空间。但是，申请人发现一旦像这样在配置有防护板的状态下进行蚀刻处理，则蚀刻速率的面内分布会恶化，无法使涂覆得到充分提高。本申请的发明人经过锐意进取，认识到蚀刻速率的面内分布恶化是积累在基板上的负电荷被防护板上邻近基板的部分吸引从而集中在基板边缘部所引起的。
现有技术文献
专利文献
【专利文献1】专利公示2013-538295号公报
发明内容
发明要解决的技术问题
基于上述认识，本发明要解决的技术问题是提供一种可通过防止负电荷在蚀刻处理时集中在基板边缘部而在高纵横比的孔内面涂覆良好地形成薄膜的成膜装置及成膜方法。
解决技术问题的手段
为解决上述技术问题，本发明的成膜装置具有：配置了靶的真空室；在真空室内保持基板的台架；向靶施加规定电力的第一电源；以及向台架施加交流电力的第二电源；进行通过第一电源向靶施加电力对靶进行溅射的成膜处理；以及通过第二电源向台架施加交流电力并蚀刻在基板上形成的薄膜的蚀刻处理，其特征在于：在基板的周围配置防护板，以台架上保持的基板的成膜面一侧为上，具有在防护板上邻近基板的部分与基板上表面位于同一平面上的成膜位置和防护板的该部分位于基板上表面的上方的蚀刻位置之间上下移动屏蔽件的驱动装置。
采用本发明，在成膜处理后进行蚀刻时，由于通过驱动装置将防护板移动到蚀刻位置，使防护板上邻近基板的部分远离基板，所以可防止负电荷集中在基板边缘部，可提高蚀刻速率的面内分布。从而，当在具有高纵横比的孔内形成薄膜时，如果采用本发明，则可在孔内面涂覆良好地形成薄膜。
在本发明中，优选在所述防护板上邻近基板的部分上设置有向下方延伸的突条。由此，由于蚀刻处理时从薄膜飞散的粒子会附着在突条上，所以可防止该粒子从防护板上邻近基板的部分和基板之间穿过，附着在真空室内面。此时，突条的高度可设置为大于等于成膜位置和蚀刻位置之间的距离，例如在10～30mm的范围内。
在本发明中，也可不设置突条，而是还具有配置在所述防护板下方的第二防护板；以及在第二防护板的上端部与基板相比位于下方的成膜位置和该上端部移动到蚀刻位置的所述防护板靠近基板的蚀刻位置之间上下移动第二防护板的第二驱动装置。由此，通过在使防护板移动到蚀刻位置的同时也使第二防护板移动到蚀刻位置，可使蚀刻处理时从薄膜飞散出的粒子附着在第二防护板上，可防止该粒子从防护板上邻近基板的部分和基板之间穿过，附着在真空室内面。
在本发明中，真空室内设置有上下一对线圈，如果上下一对线圈相对于真空室定位为在上下方向夹隔由第二电源向台架施加交流电力时产生的等离子体的话，则可进一步提高蚀刻速率的面内均匀性，进一步提高涂覆效果，是有利的。
再有，为解决上述问题，本发明的成膜方法包含：由真空室内的台架保持基板，配置围绕台架周围的防护板，向真空室内的靶施加规定的电力进行溅射的成膜工序；以及停止对靶施加电力，向台架施加交流电力并蚀刻在基板上形成的薄膜的蚀刻工序，其特征在于：以台架上保持的基板的成膜面一侧为上，在所述成膜工序中，使防护板移动到防护板上邻近基板的部分与基板上面位于同一平面上的成膜位置，在所述蚀刻工序中，使防护板移动到防护板的该部分位于基板上面的上方、且不同于成膜位置的蚀刻位置。
在本发明中，优选所述蚀刻位置位于所述成膜位置的上方10～30mm。
在本发明中，优选在所述成膜工序中，第二防护板配置为与基板上表面相比位于下方，在所述蚀刻工序中使所述第二防护板向上方移动，防止在所述蚀刻工序中从薄膜飞散的粒子在所述防护板上邻近基板的部分和基板之间穿过，附着在真空室内面。
附图说明
图1是示出本发明的实施方式的溅射装置的剖面示意图。
图2(a)是示出防护板的成膜位置的示意图，(b)是示出防护板的蚀刻位置的示意图，(c)是示出防护板的运送位置的示意图。
图3(a)是说明成膜处理的示意图，(b)是说明蚀刻处理的示意图。
图4是示出本发明的溅射装置的变形例的剖面示意图。
图5是示出确认本发明的效果的实验结果的图。图6是示出确认本发明的效果的实验结果的图。
具体实施方式
以下参照图1～图6，用以在硅晶片SW的表面以规定的薄膜厚度形成绝缘膜L，在该绝缘膜L上形成纵横比在3以上的微孔h的产品作为待处理基板W，在该孔h的内面上形成由Ta膜f构成的阻挡层时使用的溅射装置为例，对本发明的实施方式的成膜装置进行说明。
参照图1，SM是磁控方式的溅射装置，该溅射装置SM具有限定出处理室1a的真空室1。在真空室1的内顶部上安装有阴极单元C。下面以图1中朝向真空室1的内顶部侧的方向为“上”，以朝向其底部侧的方向为“下”进行说明。
阴极单元C由靶总成2，以及配置在靶总成2上方的磁铁单元3构成。靶总成2由与基板W的轮廓对应并以公知的方法形成的平面视图为圆形的板状的Ta材质的靶21；以及通过铟等粘合材料(省略图示)接合在靶21的上面的背板22构成，在通过溅射进行成膜的过程中，可通过使冷媒(冷却水)在背板22的内部流通对靶21进行冷却。在安装有靶21的状态下，背板22下面的周边部经绝缘体I安装在真空室1的侧壁上部。靶21上连接有来自DC电源或高频电源等的第一电源E1的输出，在成膜处理时，向靶21施加带有负电位的电力。
磁铁单元3是在靶21的溅射面21a的下方空间内产生磁场，捕获溅射时在溅射面21a的下方电离的电子等并使从靶21飞散的溅射粒子有效地离子化的具有公知结构的产品，此处省略对其的详细说明。
在真空室1的底部配置与靶21的溅射面21a相对的台架4，基板W被定位并保持为以其成膜面为上侧。此时，考虑产量和飞散的次数而将靶21和基板W之间的间隔设置在300～600mm的范围内。在台架4上连接来自高频电源等第二电源E2的输出，在蚀刻处理时，向台架4输入交流电力。也可在成膜处理时，从第二电源E2向台架4施加交流电力。
再有，在真空室1的侧壁上，连接有导入是氩气等稀有气体的溅射气体或蚀刻气体的气体管5，在气体管5中插设有质量流量控制器51，与省略图示的气体源相连通。由此，可将控制了流量的溅射气体或蚀刻气体导入到通过下文所述的真空排气装置61以固定的排气速度抽真空的处理室1a内，在成膜处理过程中或蚀刻处理过程中将处理室1a的压力(全压)保持为大致固定。在真空室1的底部，连接有与由涡轮分子泵或旋转泵等构成的真空排气装置61相连通的排气管6。
在真空室1内，为防止溅射粒子附着在真空室1的内壁上或位于真空室1内的部件上，配置有防护板7a、7b、7c以围绕靶21和基板W之间的空间。在围绕台架4的周围的防护板7c上，连接有驱动装置8的驱动轴81，其通过未图示的密封装置而贯通真空室1的底板。由于可使用气缸等具有公知结构的产品作为驱动装置8，故此处省略对其的详细说明。通过对驱动轴81进行驱动，可使防护板7c在图2(a)所示的成膜位置和图2(b)所示的蚀刻位置之间上下移动。在成膜位置，使防护板7c上邻近基板W的部分71与基板W上面位于同一平面上，以便在成膜处理时溅射粒子不会穿过该部分71和基板W之间的间隙并绕出。在蚀刻位置，防护板7c的部分71位于基板W上面的上方。当在该蚀刻位置进行了蚀刻处理时，存在蚀刻后的粒子(从薄膜飞散的粒子)经部分71和基板W之间的间隙绕进防护板7c和真空室1之间的空间1b并附着到真空室1内面上的问题。在本实施方式中，在防护板7c的部分71上设置有向下方延伸的突条72，可使上述粒子附着在该突条72上，结果是可防止该粒子绕进空间1b并附着在真空室1内面上。也可将从该蚀刻位置的防护板7c的部分71到基板W的水平方向的距离a设置在5～10mm的范围，将垂直方向的距离b设置在10～30mm的范围。通过设置在该范围内，可防止在蚀刻处理时基板W上累积的负电荷被吸引到上述部分71上。再有，如果将突条72的高度c设置为大于等于成膜位置和蚀刻位置之间的距离的话(例如设置在10～30mm的范围内)，则可切实防止蚀刻后的粒子绕进空间1b。再有，驱动装置8在从台架4接收或向台架4送出基板W并运送时，可将防护板7c移动到图2(c)所示的运送位置，在该运送位置中，可使防护板7c的部分71位于蚀刻位置的更上方的位置。
再有，在真空室1中，设置有上下一对线圈9u、9d，线圈9上连接有来自电源E3的输出。一旦给线圈9通电，则可在真空室1内产生向上的磁场。如图2(b)所示，线圈9u、9d相对真空室1定位为在上下方向夹隔在以第二电源E2向台架4施加交流电力时产生的等离子体P。
图1～图6中虽未特别示出，但上述溅射装置SM具有包括微电脑或序列发生器等的公知的控制装置，通过控制装置统一管理电源E1、E2、E3的运行、质量流量控制器51的运行、真空排气装置61的运行和驱动装置8的运行等。下面再参照图3(a)、图3(b)，对使用上述溅射装置SM对基板W的孔h内面形成Ta膜f的成膜方法进行说明。
首先，在对驱动装置8进行驱动并使防护板7c上升到如图2(c)所示的运送位置后，将基板W安装在真空室1内的台架4上。在启动真空排气装置61并将处理室1a内抽真空到规定的真空度(例如1×10-5Pa)的同时，对驱动装置8进行驱动使防护板7c下降到如图2(a)所示的成膜位置。一旦处理室1a内达到规定压力，则控制质量流量控制器51以规定的流量(例如5～100sccm)导入氩气气体(此时，处理室1a的压力在0.04～0.8Pa的范围内)。与之配合从第一电源E1向靶21施加例如10～25kW的电力并在真空室1内形成等离子体。由此，对靶21的溅射面21a进行溅射，通过使飞散的溅射粒子堆积附着在基板W表面而形成Ta膜f。此时，如图3(a)所示，在基板W表面(绝缘膜L上面)或孔h底面上形成的Ta膜f的薄膜厚度比在孔h内壁面上形成的Ta膜f的薄膜厚度厚。
从成膜处理开始经过规定时间后，停止第一电源E1施加的电力，对驱动装置8进行驱动并使防护板7c上升到图2(b)所示的蚀刻位置。与此同时，从第二电源E2施加600～1200W的13.56MHz的交流电力并形成等离子体。可将氩气气体流量设置为例如50～100sccm(此时，处理室1a的压力在0.4～0.8Pa的范围内)。由此，如图3(b)所示，薄膜厚度厚的Ta膜f被蚀刻，蚀刻后的Ta粒子再次附着在薄膜厚度薄的孔h内壁面上。
此处，要在孔h内面上涂敷良好地形成Ta膜f，如何提高蚀刻速率的面内均匀性是很重要的。采用本实施方式，在成膜处理后，先于蚀刻处理，通过驱动装置8使防护板7c移动到比成膜位置更向上方的蚀刻位置，由于使防护板7c的部分71离开基板W，所以可防止负电荷在蚀刻处理时集中在基板W边缘部，可提高蚀刻速率的面内分布。由此，可在高纵横比的孔h内面涂敷良好地形成Ta膜f。
以上对本发明的实施方式进行了说明，但本发明并不仅限于上述内容。在上述实施方式中，在蚀刻处理时没有对线圈9u、9d通电，但也可在蚀刻处理时对线圈9u、9d通电。由此，与不对线圈9u、9d通电时相比可提高蚀刻速率的面内均匀性，是有利的。
再有，在上述实施方式中，以在孔h内面上形成Ta膜f的情况为例进行了说明，但本发明也可广泛适用于形成由Ta膜以外的金属或金属化合物构成的薄膜的情况。
再有，在上述实施方式中，在防护板7c上邻近基板W的部分71上设置了突条72，但也可用其他的部件构成突条。例如如图4所示，也可在防护板7c的下方还设置防护板7d，在该防护板7d上连接第二驱动装置10的驱动轴11，通过对驱动轴11进行驱动，使防护板7d在图4中实线所示的蚀刻位置和图4中点划线所示的成膜位置(及运送位置)之间上下移动。通过将防护板7d移动到蚀刻位置，可防止蚀刻后的粒子穿过部分71和基板W之间的间隙绕进空间1b并附着在真空室1的内面。
接着，为确认上述效果，使用上述溅射装置SM进行接下来的实验。在本实验中，使用对Φ300mm的带有热氧化膜的Si基板的表面形成薄膜厚度为50nm的Ta膜的产品作为基板W，在真空室1内的台架4上安装基板W后，使防护板7c移动到蚀刻位置并蚀刻Ta膜。在蚀刻位置，如图2(b)所示的距离a设置为5mm，距离b设置为18mm。此时的蚀刻条件如下。设置蚀刻气体(氩气气体)的流量为90sccm(此时的处理室1a内的压力约为0.7Pa)，对台架4施加的电力为13.56MHz、1200W，不对线圈9通电(电流0A)。测量此时的蚀刻速率的分布的结果如图5中短划线L1所示。在图5中，以点划线L2表示除在线圈9中流通15A的电流以外都在与上述相同的条件下进行蚀刻的结果，同时作为以往例，以实线L3表示除使防护板7c位于成膜位置之外都在与上述相同的条件下进行蚀刻的结果。由此，确认了如已往例所示一旦使防护板7c位于成膜位置并进行蚀刻，则基板边缘部分的蚀刻速率增加，并确认了一旦使防护板7c移动到蚀刻位置，则如短划线L1所示基板边缘部分的蚀刻速率被抑制可提高面内均匀性，进而一旦对线圈9通电，则如点划线L2所示，由于基板中央部的蚀刻速率下降可使面内均匀性进一步提高。
接着，在上述蚀刻条件下使线圈9中流通的电流以0A、4A、8A、15A、20A进行变化，测量了蚀刻速率。此外，设置基板W和靶21之间的距离为600mm、基板W和线圈9d之间的距离为82.5mm、线圈9d和线圈9u之间的距离为86mm。测量此时的蚀刻速率的结果如图6所示。由此，确定如果将线圈电流设定在5A～15A的范围内，则可提高蚀刻速率的面内均匀性。
附图标记说明
E1…第一电源、E2…第二电源、SM…溅射装置(成膜装置)、W…基板、1…真空室、4…台架、7c…防护板、7d…防护板(第二防护板)、71…防护板7c邻近基板的部分、72…突条、8…驱动装置、21…靶、10…第二驱动装置。

Claims (5)

1.一种成膜装置，具有：配置了靶的真空室；在真空室内保持基板的台架；向靶施加规定电力的第一电源；以及向台架施加交流电力的第二电源；进行通过第一电源向靶施加电力对靶进行溅射的成膜处理；以及通过第二电源向台架施加交流电力并蚀刻在基板上形成的薄膜的蚀刻处理，其特征在于：
配置围住台架周围的防护板，
以台架上保持的基板的成膜面侧为上，所述成膜装置具有在成膜位置、蚀刻位置和运送位置之间上下移动防护板的驱动装置，所述成膜位置是防护板上邻近基板的部分与基板上表面位于同一平面上的、进行所述成膜处理的位置，所述蚀刻位置是防护板的该部分位于基板上表面的上方的、进行所述蚀刻处理的位置，所述运送位置是防护板的所述部分位于比所述蚀刻位置更靠上方的、基板运送时的位置；
在所述防护板上邻近基板的部分上设置有向下方延伸的突条；
所述突条的高度设置为大于等于所述成膜位置和所述蚀刻位置之间的距离，且小于所述成膜位置和所述运送位置之间的距离。
2.根据权利要求1所述的成膜装置，其特征在于：所述突条的高度设置在10～30mm的范围内。
3.根据权利要求1或2所述的成膜装置，其特征在于：
真空室内设置有上下一对线圈，上下一对线圈相对于真空室定位为在上下方向夹隔在以第二电源向台架施加交流电力时产生的等离子体。
4.一种成膜方法，包含由真空室内的台架保持基板，配置围绕台架周围的防护板，向真空室内的靶施加规定的电力进行溅射的成膜工序；以及停止对靶施加电力，向台架施加交流电力并蚀刻在基板上形成的薄膜的蚀刻工序，其特征在于：
以台架上保持的基板的成膜面侧为上，在所述成膜工序中，使防护板移动到成膜位置，所述成膜位置是防护板上邻近基板的部分与基板上表面位于同一平面上的位置，在所述蚀刻工序中，使防护板移动到蚀刻位置，所述蚀刻位置是防护板的该部分位于基板上表面的上方且不同于成膜位置的位置，移动防护板使得在将基板传递运送到台架上时，防护板的所述部分位于比所述蚀刻位置更靠上方的运送位置；
在所述防护板上邻近基板的部分上设置有向下方延伸的突条，所述突条的高度设置为大于等于所述成膜位置和所述蚀刻位置之间的距离，且小于所述成膜位置和所述运送位置之间的距离；
通过在所述蚀刻工序中从薄膜飞散的粒子在所述防护板上邻近基板的部分和基板之间穿过并附着在所述突条上，从而防止附着到真空室内表面。
5.根据权利要求4所述的成膜方法，其特征在于：
所述蚀刻位置位于所述成膜位置的上方10～30mm。
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