TWI599669B - Film forming apparatus and film forming method - Google Patents

Film forming apparatus and film forming method Download PDF

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Publication number
TWI599669B
TWI599669B TW105105676A TW105105676A TWI599669B TW I599669 B TWI599669 B TW I599669B TW 105105676 A TW105105676 A TW 105105676A TW 105105676 A TW105105676 A TW 105105676A TW I599669 B TWI599669 B TW I599669B
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Taiwan
Prior art keywords
substrate
film forming
etching
film
adhesion
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TW105105676A
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English (en)
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TW201702412A (zh
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Keiichiro Asakawa
Junichi Hamaguchi
Kazuhiro Sonoda
Yukinobu Numata
Yutaka Kokaze
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Ulvac Inc
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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Description

成膜裝置及成膜方法
本發明，係有關於成膜裝置以及成膜方法，更詳細而言，係有關於適合在具有高縱橫比之微細的孔之內面而以良好覆蓋率來成膜薄膜者。
在半導體元件之製造工程中，係存在有在具有特定之縱橫比的通孔或接觸孔的內面(內壁面以及底面)上成膜藉由Ta膜所構成的阻障層之工程。伴隨著近年來之半導體元件的更進一步之高積體化以及微細化，於被成膜Ta膜的孔中係存在有縱橫比為3以上之高縱橫比者。作為在此種Ta膜之成膜中所使用的成膜裝置，例如藉由專利文獻1，係周知有：具備被配置有靶材之真空腔、和在真空腔內而保持基板之平台、和對於靶材投入特定之電力之第1電源、和對於平台投入交流電力之第2電源，並能夠進行藉由第1電源來對於靶材投入電力並對靶材進行濺鍍之成膜處理和藉由第2電源來對於平台投入交流電力並對於被成膜於基板上之薄膜進行蝕刻之蝕刻處理者。若依據此，則藉由成膜處理而在基板表面或孔底部處 而作了較厚之成膜的Ta膜係被作蝕刻，被作了蝕刻的Ta粒子係附著在膜厚為薄之孔內壁面上，藉由此，覆蓋率係提昇。
另外，在進行成膜處理時，為了防止濺鍍粒子之對於真空腔的內壁或者是存在於真空腔內之零件的附著，於真空腔內，係以將靶材和基板之間之空間作包圍的方式而被配置有防附著板。又，一般而言，被配置於平台之周圍處的防附著板之部分，係以不會使濺鍍粒子經由該部分與基板之間之空隙而繞入至平台下方之空間中的方式，來在與基板上面同等之平面上而與基板相近接。但是，係得知了：若是在如此這般地配置了防附著板的狀態下而進行蝕刻處理，則蝕刻速率之面內分布係會惡化，而無法將覆蓋率作充分的提升。本案發明之發明者，係反覆進行努力研究，而得到了下述之知識：亦即是，蝕刻速率之面內分布的惡化，乃是起因於被積蓄在基板處之負電荷被導引至與基板相近接之防附著板的部份處並集中於基板邊緣部處一事所導致者。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特表2013-538295號公報
本發明，係基於上述知識，而以提供一種藉由在蝕刻處理時對於負電荷集中於基板邊緣部的情形作防止，而能夠在高縱橫比之孔內面以良好的覆蓋率而成膜薄膜之成膜裝置以及成膜方法一事，作為課題。
為了解決上述課題，本發明之成膜裝置，係具備有：被配置有靶材之真空腔；和在真空腔內而保持基板之平台；和對於靶材投入特定之電力之第1電源；和對於平台投入交流電力之第2電源，而進行藉由第1電源來對於靶材投入電力並對靶材進行濺鍍之成膜處理、和藉由第2電源來對於平台投入交流電力並對於被成膜於基板上之薄膜進行蝕刻之蝕刻處理，該成膜裝置，係於基板之周圍被配置有防附著板，並具備有：驅動手段，係以被保持於平台處之基板的成膜面側作為上方，而使遮罩在成膜位置與蝕刻位置之間作上下移動，該成膜位置，係使近接於基板之防附著板的部份位置於與基板上面同等之平面上，該蝕刻位置，係使此防附著板之部分位置於從基板上面起而更上方處。
若依據本發明，則當在成膜處理後而進行蝕刻時，由於係藉由驅動手段而使防附著板移動至蝕刻位置處，並使防附著板之近接於基板的部份從基板而分離，因此，係能夠防止負電荷集中於基板邊緣部處的情形，而能夠使蝕刻速率之面內分布提昇。故而，若是將本發明適用 於在具有高縱橫比之孔內而成膜薄膜的情況中，則係能夠在孔內面而以良好覆蓋率來成膜薄膜。
在本發明中，較理想，在前述防附著板之近接於基板的部份處，係設置有朝向下方而延伸之突條。若依據此，則由於在蝕刻處理時從薄膜所飛散的粒子係附著在突條上，因此係能夠防止該粒子通過防附著板之近接於基板的部份與基板之間並附著於真空腔內面的情形。於此情況，突條之高度，係可設定為成膜位置和蝕刻位置之間的距離之同等以上，例如，係可設定於10~30mm之範圍內。
在本發明中，代替設置突條，係亦可構成為，係更進而具備有：第2防附著板，係被配置在前述防附著板之下方；和第2驅動手段，係使第2防附著板在成膜位置和蝕刻位置之間作移動，該成膜位置，係使第2防附著板之上端部位置在較基板而更下方處，該蝕刻位置，係使此上端部近接於移動至了蝕刻位置處之前述防附著板之基板。若依據此，則藉由使防附著板移動至蝕刻位置處並且亦使第2防附著板移動至蝕刻位置處，係能夠使在蝕刻處理時而從薄膜所飛散的粒子附著在第2防附著板上，而能夠防止該粒子通過防附著板之近接於基板的部份與基板之間並附著於真空腔內面的情形。
在本發明中，若是於真空腔處設置有上下一對之線圈，並以於上下方向而將在藉由第2電源而對於平台投入了交流電力時所發生之電漿作包夾的方式，來定位 上下一對之線圈，則係能夠使蝕刻速率之面內均一性更進一步提昇，而能夠使覆蓋率更進一步提昇，而為有利。
又，為了解決上述課題，本發明之成膜方法，係具備有：成膜工程，係藉由真空腔內之平台而保持基板，並以將平台之周圍作包圍的方式來配置防附著板，且對於真空腔內之靶材投入特定之電力而進行濺鍍；和蝕刻工程，係停止對於靶材之電力投入，並對於平台投入交流電力而對於被成膜於基板上之薄膜進行蝕刻，該成膜方法，其特徵為：係以被保持於平台處之基板的成膜面側作為上方，而在前述成膜工程中使防附著板移動至成膜位置，並在前述蝕刻工程中使防附著板移動至與成膜位置相異之蝕刻位置，該成膜位置，係使近接於基板之防附著板的部份位置於與基板上面同等之平面上，該蝕刻位置，係使此防附著板之部分位置於從基板上面起而更上方。
在本發明中，較理想，前述蝕刻位置，係位置在較前述成膜位置而更10~30mm上方處。
在本發明中，較理想，係構成為：在前述成膜工程中，係於較基板上面而更下方處，被配置有第2防附著板，在前述蝕刻工程中，使前述第2防附著板移動至上方，而防止在前述蝕刻工程中而從薄膜所飛散的粒子通過前述防附著板之近接於基板的部份與基板之間並附著於真空腔內面的情形。
E1‧‧‧第1電源
E2‧‧‧第2電源
SM‧‧‧濺鍍裝置(成膜裝置)
W‧‧‧基板
1‧‧‧真空腔
4‧‧‧平台
7c‧‧‧防附著板
7d‧‧‧防附著板(第2防附著板)
71‧‧‧近接於基板之防附著板7c的部份
72‧‧‧突條
8‧‧‧驅動手段
21‧‧‧靶材
10‧‧‧第2驅動手段
[圖1]對於本發明之實施形態的濺鍍裝置作展示之示意性剖面圖。
[圖2](a)係為對於防附著板之成膜位置作展示之示意圖，(b)係為對於防附著板之蝕刻位置作展示之示意圖，(c)係為對於防附著板之搬送位置作展示之示意圖。
[圖3](a)係為對於成膜處理作說明之示意圖，(b)係為對於蝕刻處理作說明示意圖。
[圖4]對於本發明之濺鍍裝置的變形例作展示之示意性剖面圖。
[圖5]對於用以確認本發明之效果的實驗結果作展示之圖。
[圖6]對於用以確認本發明之效果的實驗結果作展示之圖。
以下，參考圖面，針對將應處理之基板W設為於矽晶圓SW之表面上以特定之膜厚而形成絕緣膜L，並在此絕緣膜L處形成有縱橫比為3以上之微細之孔h者，並以被使用於在此孔h之內面上形成藉由Ta膜f所構成的阻障層之情況中的濺鍍裝置為例，來針對本發明之實施形態的成膜裝置作說明。
參考圖1，SM，係為磁控管方式之濺鍍裝置，此濺鍍裝置SM，係具備有區劃出處理室1a之真空腔 1。在真空腔1之頂板部處，係被安裝有陰極單元C。於以下，在圖1中，係將朝向真空腔1之頂板部側的方向設為「上」，並將朝向其之底部側的方向作為「下」，來進行說明。
陰極單元C，係由靶材組件2和被配置在靶材組件2之上方處的磁石單元3所構成。靶材組件2，係由因應於基板W之輪廓而藉由公知之方法來形成為平面觀察時成圓形之板狀的Ta製之靶材21、和在靶材21之上面經由銦等之接合材(省略圖示)而被作接合的擋板22，而構成之，在由濺鍍所致之成膜中，係藉由於擋板22之內部流動冷媒(冷卻水)，而成為能夠將靶材21冷卻。在裝著了靶材21之狀態下的擋板22下面之周緣部，係隔著絕緣體I而被安裝於真空腔1之側壁上部處。於靶材21處，係被連接有由DC電源或高頻電源等之第1電源E1而來之輸出，於成膜處理時，係對於靶材21而投入具有負的電位之電力。
磁石單元3，係為在靶材21之濺鍍面21a的下方空間處使磁場產生，並在濺鍍時將在濺鍍面21a之下方所電離了的電子等作捕捉並將從靶材21所飛散出的濺鍍粒子有效率地離子化的具備有週知之構造者，於此，係省略詳細之說明。
在真空腔1之底部，係與靶材21之濺鍍面21a相對向地而被配置有平台4，而能夠將基板W使其之成膜面成為上側地來作定位並作保持。於此情況，靶材 21和基板W之間的間隔，係對於生產性或散射次數等作考慮，而設定為300~600mm之範圍內。於平台4處，係被連接有由高頻電源等之第2電源E2而來之輸出，於蝕刻處理時，係對於平台4而投入交流電力。於成膜處理時，係亦可從第2電源E2來對於平台4而投入交流電力。
又，在真空腔1之側壁處，係被連接有將氬等之身為稀有氣體的濺鍍氣體或蝕刻氣體作導入之氣體管5，於氣體管5處，係中介設置有質量流控制器51，而與省略圖示之氣體源相通連。藉由此，被作了流量控制之濺鍍氣體或蝕刻氣體，係能夠導入至藉由後述之真空排氣手段61而被以一定之排氣速度進行真空抽氣之處理室1a內，在成膜處理中或者是蝕刻處理中，處理室1a之壓力(全壓力)係被構成為保持為略一定。在真空腔1之底部處，係被連接有與由渦輪分子幫浦或是旋轉幫浦等所成之真空排氣手段61相通的排氣管6。
為了防止濺鍍粒子之對於真空腔1的內壁或者是存在於真空腔1內之零件的附著，於真空腔1內，係以將靶材21和基板W之間之空間作包圍的方式而被配置有防附著板7a、7b、7c。在包圍平台4之周圍的防附著板7c處，係被連接有驅動手段8之驅動軸81，該驅動軸81，係經由省略圖示之密封手段而貫通真空腔1之底板。作為驅動手段8，由於係可利用具備有汽缸等之週知之構造者，因此，於此係省略詳細說明。藉由驅動驅動軸 81，係能夠使防附著板7c在圖2(a)中所示之成膜位置和在圖2(b)中所示之蝕刻位置之間作上下移動。於成膜位置處，係使近接於基板W之防附著板7c的部份71位置在與基板W之上面同等的平面上，而構成為在成膜處理時不會使濺鍍粒子經由該部分71與基板W之間之空隙而繞入。在蝕刻位置處，防附著板7c之部分71係位置在從基板W之上面起的上方處。當在此蝕刻位置處而進行蝕刻處理的情況時，被作了蝕刻的粒子(從薄膜所飛散的粒子)係會有經由部分71與基板W之間的空隙而繞入至防附著板7c和真空腔1之間的空間1b中並附著於真空腔1之內面上之虞。在本實施形態中，藉由於防附著板7c之部分71處而設置朝向下方延伸的突條72，係能夠使上述粒子附著於此突條72處，其結果，係能夠防止該粒子之朝向空間1b的繞入並防止其之對於真空腔1之內面的附著。較理想，係將從此蝕刻位置之防附著板7c之部分71起直到基板W為止的水平方向之距離a設為5~10mm之範圍，並將垂直方向之距離b設為10~30mm之範圍。藉由設定於此範圍內，在蝕刻處理時，係能夠防止積蓄在基板W處的負電荷被導引至上述部分71處的情形。又，突條72之高度c，只要設定為成膜位置和蝕刻位置之間的距離之同等以上(例如，10~30mm之範圍內)，則便能夠確實地防止被作了蝕刻的粒子之對於空間1b的繞入。另外，驅動手段8，在將基板W對於平台4作授受之搬送時，係能夠使防附著板7c移動至圖2(c)中所示之搬送位 置處，在此搬送位置處，防附著板7c之部分71係位置在較蝕刻位置而更上方處。
又，在真空腔1處，係被設置有上下一對的線圈9u、9d，在線圈9處係被連接有從電源E3而來之輸出。若是對於線圈9通電，則係成為能夠在真空腔1內產生朝向上方之磁場。如同圖2(b)中所示一般，線圈9u、9d，係以於上下方向而將在藉由第2電源E2而對於平台4投入了交流電力時所發生之電漿P作包夾的方式，來相對於真空腔1而作定位。
雖並未特別作圖示，但是，上述濺鍍裝置SM，係具有具備微電腦或是序列器等之週知的控制手段，並成為藉由控制手段，來對於電源E1、E2、E3之動作、質量流控制器51之動作、真空排氣手段61之動作以及驅動手段8之動作等作統籌管理。以下，參考圖3，針對使用上述濺鍍裝置SM來在基板W之孔h內面上成膜Ta膜f之成膜方法作說明。
首先，驅動驅動手段8，而使防附著板7c一直上升至圖2(c)中所示之搬送位置處，之後，將基板W安裝於真空腔1內之平台4上。使真空排氣手段61動作而將處理室1a內真空抽氣至特定之真空度(例如，1×10-5Pa)，並且驅動驅動手段8而使防附著板7c下降至圖2(a)所示之成膜位置處。若是處理室1a內達到了特定壓力，則對於質量流控制器51作控制，而將氬氣氣體以特定流量(例如，5~100sccm)作導入(此時，處理室1a之 壓力係成為0.04~0.8Pa之範圍)。與此並行地，從第1電源E1而對於靶材21投入例如10~25kW之電力，並在真空腔1內形成電漿。藉由此，來對於靶材21之濺鍍面21a進行濺鍍，並藉由使飛散了的濺鍍粒子附著、堆積於基板W表面上，來成膜Ta膜f。此時，如同圖3(a)中所示一般，被形成於基板W表面(絕緣膜L上面)或孔h底面處之Ta膜f的膜厚，係成為較被形成於孔h內壁面上之Ta膜f的膜厚而更厚。
若是從成膜處理開始起而經過特定之時間，則係停止從第1電源E1而來之電力投入，並驅動驅動手段8而使防附著板7c上升至圖2(b)中所示之蝕刻位置處。於此一同地，從第2電源E2來將13.56MHz之交流電力作600~1200W之投入，而形成電漿。氬氣流量，例如係可設定為50~100sccm(此時，處理室1a之壓力係成為0.4~0.8Pa之範圍)。藉由此，如同圖3(b)中所示一般，膜厚為厚之Ta膜係被作蝕刻，被作了蝕刻的Ta粒子係再度附著在膜厚為薄之孔h的內壁面上。
於此，為了在孔h之內面以良好覆蓋率來形成Ta膜f，將蝕刻速率之面內均一性提高一事係為重要。若依據本實施形態，則在成膜處理後，由於係在進行蝕刻處理之前，先藉由驅動手段8而使防附著板7c移動至較成膜位置而更上方之蝕刻位置處，並使防附著板7c之部份71從基板W而分離，因此，係能夠在蝕刻處理時防止負電荷集中於基板W邊緣部處的情形，而能夠使蝕刻速 率之面內分布提昇。藉由此，係能夠在高縱橫比之孔h的內面而以良好覆蓋率來成膜Ta膜f。
以上，雖係針對本發明之實施形態作了說明，但是，本發明，係並不被限定於上述形態。在上述實施形態中，雖係於蝕刻處理時並未對於線圈9u、9d通電，但是係亦可在蝕刻處理時而對於線圈9u、9d通電。若依據此，則相較於並不對於線圈9u、9d通電的情況，係能夠將蝕刻速率之面內均一性提高，而為有利。
又，在上述實施形態中，雖係以在孔h之內面成膜Ta膜f的情況為例來作了說明，但是，就算是在成膜Ta膜以外之由金屬或金屬化合物所成之薄膜的情況時，亦能夠廣泛適用本發明。
又，在上述實施形態中，雖係於防附著板7c之近接於基板W的部份71處設置有突條72，但是，係亦可將突條藉由其他構件來構成。例如，亦可如同圖4中所示一般，構成為於防附著板7c之下方更進而設置防附著板7d，並於此防附著板7d處連接第2驅動手段10之驅動軸11，再藉由驅動驅動軸11，來使防附著板7d在圖中之以實線所示的蝕刻位置和在圖中以一點鍊線所示的成膜位置(以及搬送位置)之間作上下移動。藉由使防附著板7d移動至蝕刻位置處，係能夠防止被作了蝕刻的粒子通過部分71與基板W之間的空隙而繞入至空間1b中並附著於真空腔1之內面上的情形。
接著，為了對於上述效果作確認，係使用上 述構成之濺鍍裝置SM而進行了以下之實驗。在本實驗中，作為基板W，係使用在Φ300mm之附熱氧化膜Si基板的表面上以膜厚50nm來形成了Ta膜者，在將基板W安裝於真空腔1內的平台4上之後，使防附著板7c移動至蝕刻位置處，並對於Ta膜進行了蝕刻。在蝕刻位置處，圖2(b)中所示之距離a係設定為5mm，距離b係設定為18mm。於此情況之蝕刻條件，係如同下述一般。將蝕刻氣體(氬氣氣體)之流量設為90sccm(此時之處理室1a內的壓力係為約0.7Pa)，將對於平台4之投入電力設定為13.56MHz、1200W，並設為並無對於線圈9通電(電流0A)。將對於此時之蝕刻速率的分布作了測定之結果，於圖5中以虛線L1來作展示。在圖5中，係將除了對於線圈9流動了15A之電流以外為藉由與上述相同之條件來進行了蝕刻的結果，以一點鍊線L2來作展示，並且，作為先前技術例，而將除了使防附著板7c位置於成膜位置處以外為藉由與上述相同之條件來進行了蝕刻的結果，以實線L3來作展示。若依據此，則係確認到了：若是如同先前技術例一般地而使防附著板7c位置在成膜位置處並進行蝕刻，則基板邊緣部分之蝕刻速率係變高，但是，若是使防附著板7c移動至蝕刻位置處，則如同以虛線L1所示一般，基板邊緣部分之蝕刻速率係被抑制，而能夠使面內均一性提昇，若是進行進行對於線圈9之通電，則如同一點鍊線L2所示一般，基板中央部之蝕刻速率係下降，藉由此，係能夠將面內均一性更進一步作提昇。
接著，將在上述蝕刻條件下之於線圈9處所流動的電流以0A、4A、8A、15A、20A的方式來作改變，並對於蝕刻速率作了測定。另外，係將基板W與靶材21之間的距離設定為600mm，並將基板W和線圈9d之間的距離設為82.5mm，且將線圈9d和線圈9u之間的距離設定為86mm。將對於此時之蝕刻速率作了測定之結果，展示於圖6中。若依據此，則係可確認到，若是將線圈電流設定於5A~15A之範圍，則係能夠將蝕刻速率之面內均一性提昇。
W‧‧‧基板
1‧‧‧真空腔
1a‧‧‧處理室
1b‧‧‧處理室
4‧‧‧平台
9u、9d‧‧‧線圈
7a、7b、7c‧‧‧防附著板
71‧‧‧近接於基板之防附著板7c的部份
72‧‧‧突條
P‧‧‧電漿

Claims (9)

  1. 一種成膜裝置，係具備有：被配置有靶材之真空腔；和在真空腔內而保持基板之平台；和對於靶材投入特定之電力之第1電源；和對於平台投入交流電力之第2電源，該成膜裝置，係進行藉由第1電源來對於靶材投入電力並對靶材進行濺鍍之成膜處理、和藉由第2電源來對於平台投入交流電力並對於被成膜於基板上之薄膜進行蝕刻之蝕刻處理，該成膜裝置，其特徵為：係被配置有將平台之周圍作包圍的防附著板，並具備有：驅動手段，係以被保持於平台處之基板的成膜面側作為上方，而使防附著板在進行前述成膜處理之成膜位置和進行前述蝕刻處理之蝕刻位置以及基板搬送時之搬送位置之間作上下移動，該成膜位置，係使近接於基板之防附著板的部份，位置於與基板上面同等之平面上，該蝕刻位置，係使此防附著板之部分，位置於從基板上面起而更上方，該搬送位置，係使前述防附著板之部分，位置於較前述蝕刻位置而更上方。
  2. 如申請專利範圍第1項所記載之成膜裝置，其中，在前述防附著板之近接於基板的部份處，係設置有朝向下方而延伸之突條。
  3. 如申請專利範圍第2項所記載之成膜裝置，其 中，前述突條之高度，係被設定為前述成膜位置和前述蝕刻位置之間的距離之同等以上。
  4. 如申請專利範圍第2項或第3項所記載之成膜裝置，其中，前述突條之高度，係被設定為10~30mm之範圍內。
  5. 如申請專利範圍第1項所記載之成膜裝置，其中，係更進而具備有：第2防附著板，係被配置在前述防附著板之下方；和第2驅動手段，係使第2防附著板在成膜位置和蝕刻位置之間作上下移動，該成膜位置，係使第2防附著板之上端部，位置在較基板而更下方處，該蝕刻位置，係使此上端部，近接於移動至了蝕刻位置處之前述防附著板之基板。
  6. 如申請專利範圍第1項、第2項、第3項、第5項中之任一項所記載之成膜裝置，其中，係於真空腔處設置有上下一對之線圈，以於上下方向而將在藉由第2電源而對於平台投入了交流電力時所發生之電漿作包夾的方式，來相對於真空腔定位上下一對之線圈。
  7. 一種成膜方法，係具備有：成膜工程，係藉由真空腔內之平台而保持基板，並以將平台之周圍作包圍的方式來配置防附著板，且對於真空腔內之靶材投入特定之電力而進行濺鍍；和蝕刻工程，係停止對於靶材之電力投入，並對於平台投入交流電力而對於被成膜於基板上之薄膜進行蝕刻， 該成膜方法，其特徵為：係以被保持於平台處之基板的成膜面側作為上方，而在前述成膜工程中使防附著板移動至成膜位置，並在前述蝕刻工程中使防附著板移動至與成膜位置相異之蝕刻位置，並且，在將基板對於平台作授受之搬送時，以使前述防附著板之部分會位置於較前述蝕刻位置而更上方處的方式，而使防附著板移動，該成膜位置，係使近接於基板之防附著板的部份位置於與基板上面同等之平面上，該蝕刻位置，係使此防附著板之部分位置於從基板上面起而更上方。
  8. 如申請專利範圍第7項所記載之成膜方法，其中，前述蝕刻位置，係位置在較前述成膜位置而更10~30mm上方處。
  9. 如申請專利範圍第7項或第8項所記載之成膜方法，其中，在前述成膜工程中，係於較基板上面而更下方處，被配置有第2防附著板，在前述蝕刻工程中，使前述第2防附著板移動至上方，而防止在前述蝕刻工程中而從薄膜所飛散的粒子通過前述防附著板之近接於基板的部份與基板之間並附著於真空腔內面的情形。
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