KR100801181B1 - 디지털 이미지 센서 및 그 설계 방법 - Google Patents

디지털 이미지 센서 및 그 설계 방법 Download PDF

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Publication number
KR100801181B1
KR100801181B1 KR1020010035678A KR20010035678A KR100801181B1 KR 100801181 B1 KR100801181 B1 KR 100801181B1 KR 1020010035678 A KR1020010035678 A KR 1020010035678A KR 20010035678 A KR20010035678 A KR 20010035678A KR 100801181 B1 KR100801181 B1 KR 100801181B1
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substrate
pixel
array
optical sensor
digital
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KR20020002447A (ko
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데이비드지아오동양
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픽심 인코포레이티드
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020010035678A 2000-06-22 2001-06-22 디지털 이미지 센서 및 그 설계 방법 Expired - Lifetime KR100801181B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/603,113 2000-06-22
US09/603,113 US6809769B1 (en) 2000-06-22 2000-06-22 Designs of digital pixel sensors

Publications (2)

Publication Number Publication Date
KR20020002447A KR20020002447A (ko) 2002-01-09
KR100801181B1 true KR100801181B1 (ko) 2008-02-05

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Country Status (5)

Country Link
US (1) US6809769B1 (enExample)
EP (1) EP1168450A3 (enExample)
JP (1) JP4686060B2 (enExample)
KR (1) KR100801181B1 (enExample)
CN (1) CN1336754A (enExample)

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JP4744828B2 (ja) * 2004-08-26 2011-08-10 浜松ホトニクス株式会社 光検出装置
JP4277216B2 (ja) * 2005-01-13 2009-06-10 ソニー株式会社 撮像装置及び撮像結果の処理方法
US8049293B2 (en) 2005-03-07 2011-11-01 Sony Corporation Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device
JP4232755B2 (ja) * 2005-04-05 2009-03-04 株式会社デンソー イメージセンサ及びイメージセンサの制御方法
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JP5521721B2 (ja) 2009-08-28 2014-06-18 ソニー株式会社 撮像素子およびカメラシステム
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KR102587895B1 (ko) * 2018-09-13 2023-10-12 삼성전자주식회사 픽셀 어레이와 메모리 셀 어레이가 병합된 이미지 센서 및 이를 포함하는 전자 장치
JP7055727B2 (ja) * 2018-09-20 2022-04-18 株式会社ニコン 撮像素子およびカメラ
KR102759366B1 (ko) 2019-06-14 2025-01-24 삼성전자주식회사 Cis, 및 그 cis에서 픽셀별 ae 방법

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KR20170128185A (ko) * 2010-09-03 2017-11-22 소니 주식회사 반도체 집적 회로, 전자 기기, 고체 촬상 장치, 촬상 장치
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Also Published As

Publication number Publication date
US6809769B1 (en) 2004-10-26
EP1168450A2 (en) 2002-01-02
JP4686060B2 (ja) 2011-05-18
JP2002044527A (ja) 2002-02-08
CN1336754A (zh) 2002-02-20
KR20020002447A (ko) 2002-01-09
EP1168450A3 (en) 2004-04-14

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