CN1336754A - 数字像素传感器的改进设计 - Google Patents

数字像素传感器的改进设计 Download PDF

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Publication number
CN1336754A
CN1336754A CN 01129500 CN01129500A CN1336754A CN 1336754 A CN1336754 A CN 1336754A CN 01129500 CN01129500 CN 01129500 CN 01129500 A CN01129500 A CN 01129500A CN 1336754 A CN1336754 A CN 1336754A
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CN
China
Prior art keywords
substrate
optical sensor
circuit
pixel
sensor
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Pending
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CN 01129500
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English (en)
Chinese (zh)
Inventor
杨晓东
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PICKEHIM CORP
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PICKEHIM CORP
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Publication of CN1336754A publication Critical patent/CN1336754A/zh
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN 01129500 2000-06-22 2001-06-21 数字像素传感器的改进设计 Pending CN1336754A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/603,113 2000-06-22
US09/603,113 US6809769B1 (en) 2000-06-22 2000-06-22 Designs of digital pixel sensors

Publications (1)

Publication Number Publication Date
CN1336754A true CN1336754A (zh) 2002-02-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN 01129500 Pending CN1336754A (zh) 2000-06-22 2001-06-21 数字像素传感器的改进设计

Country Status (5)

Country Link
US (1) US6809769B1 (enExample)
EP (1) EP1168450A3 (enExample)
JP (1) JP4686060B2 (enExample)
KR (1) KR100801181B1 (enExample)
CN (1) CN1336754A (enExample)

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CN100550994C (zh) * 2003-10-22 2009-10-14 伊斯曼柯达公司 具有替换电路分布的图像传感器阵列
CN102006427A (zh) * 2009-08-28 2011-04-06 索尼公司 成像器件和相机系统
CN104502946A (zh) * 2014-12-16 2015-04-08 华中师范大学 基于cmos芯片的射线探测装置及探测方法
CN106158896A (zh) * 2010-11-11 2016-11-23 索尼公司 固态成像设备和电子装置

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JP7055727B2 (ja) * 2018-09-20 2022-04-18 株式会社ニコン 撮像素子およびカメラ
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100550994C (zh) * 2003-10-22 2009-10-14 伊斯曼柯达公司 具有替换电路分布的图像传感器阵列
CN102006427A (zh) * 2009-08-28 2011-04-06 索尼公司 成像器件和相机系统
CN102006427B (zh) * 2009-08-28 2013-08-28 索尼公司 成像器件和相机系统
CN106158896A (zh) * 2010-11-11 2016-11-23 索尼公司 固态成像设备和电子装置
CN106252370A (zh) * 2010-11-11 2016-12-21 索尼公司 固态成像设备和电子装置
CN106158896B (zh) * 2010-11-11 2019-04-12 索尼公司 固态成像设备和电子装置
CN106252370B (zh) * 2010-11-11 2019-07-05 索尼公司 固态成像设备和电子装置
CN104502946A (zh) * 2014-12-16 2015-04-08 华中师范大学 基于cmos芯片的射线探测装置及探测方法
CN104502946B (zh) * 2014-12-16 2017-06-13 华中师范大学 基于cmos芯片的射线探测装置及探测方法

Also Published As

Publication number Publication date
EP1168450A2 (en) 2002-01-02
JP4686060B2 (ja) 2011-05-18
KR100801181B1 (ko) 2008-02-05
JP2002044527A (ja) 2002-02-08
EP1168450A3 (en) 2004-04-14
US6809769B1 (en) 2004-10-26
KR20020002447A (ko) 2002-01-09

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