KR100801046B1 - 액침 노광용 포지티브형 레지스트 조성물 및 레지스트패턴의 형성 방법 - Google Patents

액침 노광용 포지티브형 레지스트 조성물 및 레지스트패턴의 형성 방법 Download PDF

Info

Publication number
KR100801046B1
KR100801046B1 KR1020067018950A KR20067018950A KR100801046B1 KR 100801046 B1 KR100801046 B1 KR 100801046B1 KR 1020067018950 A KR1020067018950 A KR 1020067018950A KR 20067018950 A KR20067018950 A KR 20067018950A KR 100801046 B1 KR100801046 B1 KR 100801046B1
Authority
KR
South Korea
Prior art keywords
group
resist composition
structural unit
exposure
immersion exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020067018950A
Other languages
English (en)
Korean (ko)
Other versions
KR20060126826A (ko
Inventor
게이타 이시두카
고타로 엔도
Original Assignee
도오꾜오까고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도오꾜오까고오교 가부시끼가이샤 filed Critical 도오꾜오까고오교 가부시끼가이샤
Publication of KR20060126826A publication Critical patent/KR20060126826A/ko
Application granted granted Critical
Publication of KR100801046B1 publication Critical patent/KR100801046B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020067018950A 2004-03-05 2005-03-07 액침 노광용 포지티브형 레지스트 조성물 및 레지스트패턴의 형성 방법 Expired - Fee Related KR100801046B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004063016 2004-03-05
JPJP-P-2004-00063016 2004-03-05
JP2004170424A JP4502715B2 (ja) 2004-03-05 2004-06-08 液浸露光用ポジ型レジスト組成物およびレジストパターンの形成方法
JPJP-P-2004-00170424 2004-06-08

Publications (2)

Publication Number Publication Date
KR20060126826A KR20060126826A (ko) 2006-12-08
KR100801046B1 true KR100801046B1 (ko) 2008-02-04

Family

ID=34921712

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067018950A Expired - Fee Related KR100801046B1 (ko) 2004-03-05 2005-03-07 액침 노광용 포지티브형 레지스트 조성물 및 레지스트패턴의 형성 방법

Country Status (6)

Country Link
US (1) US20070190448A1 (https=)
EP (1) EP1736827A4 (https=)
JP (1) JP4502715B2 (https=)
KR (1) KR100801046B1 (https=)
TW (1) TW200534043A (https=)
WO (1) WO2005085954A1 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040078090A1 (en) 2002-10-18 2004-04-22 Francois Binette Biocompatible scaffolds with tissue fragments
JP4448767B2 (ja) 2004-10-08 2010-04-14 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7947421B2 (en) 2005-01-24 2011-05-24 Fujifilm Corporation Positive resist composition for immersion exposure and pattern-forming method using the same
JP4774302B2 (ja) * 2005-01-24 2011-09-14 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4524207B2 (ja) * 2005-03-02 2010-08-11 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4717640B2 (ja) * 2005-12-12 2011-07-06 東京応化工業株式会社 液浸露光用レジスト組成物およびレジストパターン形成方法
TWI440978B (zh) 2006-02-15 2014-06-11 Sumitomo Chemical Co 化學增幅正型阻劑組合物
JP4912733B2 (ja) * 2006-02-17 2012-04-11 東京応化工業株式会社 液浸露光用レジスト組成物およびレジストパターン形成方法
US8697343B2 (en) 2006-03-31 2014-04-15 Jsr Corporation Fluorine-containing polymer, purification method, and radiation-sensitive resin composition
WO2007119803A1 (ja) * 2006-04-13 2007-10-25 Asahi Glass Company, Limited イマージョンリソグラフィー用レジスト材料
JP2007334278A (ja) * 2006-05-18 2007-12-27 Tokyo Ohka Kogyo Co Ltd 液浸露光用ポジ型レジスト組成物およびレジストパターン形成方法
US7799507B2 (en) 2006-05-18 2010-09-21 Tokyo Ohka Co., Ltd. Positive resist composition for immersion lithography and method for forming resist pattern
JP4832165B2 (ja) * 2006-05-31 2011-12-07 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
CN101495443A (zh) 2006-08-04 2009-07-29 出光兴产株式会社 含金刚烷结构的聚合性化合物、其制备方法和树脂组合物
JP4355011B2 (ja) 2006-11-07 2009-10-28 丸善石油化学株式会社 液浸リソグラフィー用共重合体及び組成物
JP2009004478A (ja) * 2007-06-20 2009-01-08 Toshiba Corp パターン形成方法及び半導体装置の製造方法
JP5292818B2 (ja) * 2008-01-11 2013-09-18 ダイキン工業株式会社 重合性含フッ素単量体および含フッ素重合体ならびにレジストパターン形成方法
JP4703674B2 (ja) * 2008-03-14 2011-06-15 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
TWI518456B (zh) 2008-04-21 2016-01-21 住友化學股份有限公司 化學放大型正阻劑組成物
US8062830B2 (en) 2008-04-21 2011-11-22 Sumitomo Chemical Company, Limited Chemically amplified positive resist composition
KR20110010095A (ko) * 2008-05-19 2011-01-31 제이에스알 가부시끼가이샤 액침 노광용 감방사선성 수지 조성물, 중합체 및 레지스트 패턴 형성 방법
US10241390B2 (en) * 2016-02-24 2019-03-26 AGC Inc. Reflective mask blank and process for producing the reflective mask blank
CN121263453A (zh) * 2023-05-31 2026-01-02 中央硝子株式会社 含氟聚合物、含氟树脂膜形成用组合物、含氟树脂膜、抗蚀图案形成用组合物、抗蚀图案的形成方法、抗蚀上层膜形成用组合物、含氟聚合物的分解方法、含氟聚合性单体、化合物及含氟聚合性单体的制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002169287A (ja) * 2000-11-29 2002-06-14 Fuji Photo Film Co Ltd ポジ型レジスト組成物

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6265326A (ja) * 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
WO1999049504A1 (fr) * 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP4083399B2 (ja) * 2001-07-24 2008-04-30 セントラル硝子株式会社 含フッ素重合性単量体およびそれを用いた高分子化合物
US7335454B2 (en) * 2001-12-13 2008-02-26 Fujifilm Corporation Positive resist composition
US7531286B2 (en) * 2002-03-15 2009-05-12 Jsr Corporation Radiation-sensitive resin composition
US6806026B2 (en) * 2002-05-31 2004-10-19 International Business Machines Corporation Photoresist composition
TWI284779B (en) * 2002-06-07 2007-08-01 Fujifilm Corp Photosensitive resin composition
JP2004069981A (ja) * 2002-08-06 2004-03-04 Fuji Photo Film Co Ltd ポジ型レジスト組成物
US6992750B2 (en) * 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
JP2005099646A (ja) * 2003-03-28 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法
JP4029064B2 (ja) * 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
EP1505439A3 (en) * 2003-07-24 2005-04-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition and method of forming resist pattern
JP4530751B2 (ja) * 2003-07-24 2010-08-25 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP4013063B2 (ja) * 2003-08-26 2007-11-28 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP2005164821A (ja) * 2003-12-01 2005-06-23 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7432042B2 (en) * 2003-12-03 2008-10-07 United Microelectronics Corp. Immersion lithography process and mask layer structure applied in the same
US20050147920A1 (en) * 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
JP4683887B2 (ja) * 2004-09-13 2011-05-18 セントラル硝子株式会社 ラクトン化合物、ラクトン含有単量体、高分子化合物、それを用いたレジスト材料及びパターン形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002169287A (ja) * 2000-11-29 2002-06-14 Fuji Photo Film Co Ltd ポジ型レジスト組成物

Also Published As

Publication number Publication date
EP1736827A4 (en) 2009-02-25
JP4502715B2 (ja) 2010-07-14
TWI368824B (https=) 2012-07-21
JP2005284238A (ja) 2005-10-13
KR20060126826A (ko) 2006-12-08
WO2005085954A1 (ja) 2005-09-15
US20070190448A1 (en) 2007-08-16
TW200534043A (en) 2005-10-16
EP1736827A1 (en) 2006-12-27

Similar Documents

Publication Publication Date Title
KR100801046B1 (ko) 액침 노광용 포지티브형 레지스트 조성물 및 레지스트패턴의 형성 방법
KR100887202B1 (ko) 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 및 이보호막을 이용한 레지스트 패턴 형성 방법
KR100853063B1 (ko) 액침 노광 프로세스용 레지스트 보호막 형성용 재료,복합막 및 레지스트 패턴 형성 방법
KR100743416B1 (ko) 레지스트 조성물
KR100952174B1 (ko) 레지스트 보호막 형성용 재료 및 이것을 이용한 레지스트패턴 형성방법
KR100722044B1 (ko) 액침 노광 프로세스용 침지액 및 상기 침지액을 이용한레지스트 패턴 형성 방법
JP5301070B2 (ja) 液浸露光プロセス用レジスト保護膜形成用材料、および該保護膜を用いたレジストパターン形成方法
JP2006227632A (ja) 液浸露光プロセス用レジスト保護膜形成用材料、複合膜、およびレジストパターン形成方法
JP4368267B2 (ja) レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
JP2005250511A (ja) 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料による保護膜を有するレジスト膜、および該保護膜を用いたレジストパターン形成方法
JP5507601B2 (ja) レジストパターン形成方法
JP2006048075A (ja) 液浸露光プロセス用レジスト保護膜除去用溶剤およびこれを用いたレジストパターン形成方法
JP2006309257A (ja) 液浸露光プロセス用レジスト保護膜除去用溶剤およびこれを用いたレジストパターン形成方法

Legal Events

Date Code Title Description
A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

G170 Re-publication after modification of scope of protection [patent]
PG1701 Publication of correction

St.27 status event code: A-5-5-P10-P19-oth-PG1701

Patent document republication publication date: 20080410

Republication note text: Request for Correction Notice (Document Request)

Gazette number: 1008010460000

Gazette reference publication date: 20080204

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20130111

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20140107

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20150105

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20160104

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20170102

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20180103

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20190103

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20200103

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 17

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20250130

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

H13 Ip right lapsed

Free format text: ST27 STATUS EVENT CODE: N-4-6-H10-H13-OTH-PC1903 (AS PROVIDED BY THE NATIONAL OFFICE); TERMINATION CATEGORY : DEFAULT_OF_REGISTRATION_FEE

Effective date: 20250130

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20250130