JP4502715B2 - 液浸露光用ポジ型レジスト組成物およびレジストパターンの形成方法 - Google Patents

液浸露光用ポジ型レジスト組成物およびレジストパターンの形成方法 Download PDF

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Publication number
JP4502715B2
JP4502715B2 JP2004170424A JP2004170424A JP4502715B2 JP 4502715 B2 JP4502715 B2 JP 4502715B2 JP 2004170424 A JP2004170424 A JP 2004170424A JP 2004170424 A JP2004170424 A JP 2004170424A JP 4502715 B2 JP4502715 B2 JP 4502715B2
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JP
Japan
Prior art keywords
group
structural unit
resist composition
exposure
immersion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004170424A
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English (en)
Japanese (ja)
Other versions
JP2005284238A (ja
Inventor
啓太 石塚
浩太郎 遠藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP2004170424A priority Critical patent/JP4502715B2/ja
Priority to TW094106699A priority patent/TW200534043A/zh
Priority to KR1020067018950A priority patent/KR100801046B1/ko
Priority to PCT/JP2005/003903 priority patent/WO2005085954A1/ja
Priority to US10/591,718 priority patent/US20070190448A1/en
Priority to EP05720175A priority patent/EP1736827A4/en
Publication of JP2005284238A publication Critical patent/JP2005284238A/ja
Application granted granted Critical
Publication of JP4502715B2 publication Critical patent/JP4502715B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2004170424A 2004-03-05 2004-06-08 液浸露光用ポジ型レジスト組成物およびレジストパターンの形成方法 Expired - Fee Related JP4502715B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004170424A JP4502715B2 (ja) 2004-03-05 2004-06-08 液浸露光用ポジ型レジスト組成物およびレジストパターンの形成方法
TW094106699A TW200534043A (en) 2004-03-05 2005-03-04 Positive resist composition for immersion exposure and method for forming resist pattern
KR1020067018950A KR100801046B1 (ko) 2004-03-05 2005-03-07 액침 노광용 포지티브형 레지스트 조성물 및 레지스트패턴의 형성 방법
PCT/JP2005/003903 WO2005085954A1 (ja) 2004-03-05 2005-03-07 液浸露光用ポジ型レジスト組成物およびレジストパターンの形成方法
US10/591,718 US20070190448A1 (en) 2004-03-05 2005-03-07 Positive-type resist composition for liquid immersion lithography and method for forming resist pattern
EP05720175A EP1736827A4 (en) 2004-03-05 2005-03-07 POSITIVE RESIST FORMULATION FOR DIVING TREATMENT AND METHOD FOR FORMING A RESIST PATTERN

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004063016 2004-03-05
JP2004170424A JP4502715B2 (ja) 2004-03-05 2004-06-08 液浸露光用ポジ型レジスト組成物およびレジストパターンの形成方法

Publications (2)

Publication Number Publication Date
JP2005284238A JP2005284238A (ja) 2005-10-13
JP4502715B2 true JP4502715B2 (ja) 2010-07-14

Family

ID=34921712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004170424A Expired - Fee Related JP4502715B2 (ja) 2004-03-05 2004-06-08 液浸露光用ポジ型レジスト組成物およびレジストパターンの形成方法

Country Status (6)

Country Link
US (1) US20070190448A1 (https=)
EP (1) EP1736827A4 (https=)
JP (1) JP4502715B2 (https=)
KR (1) KR100801046B1 (https=)
TW (1) TW200534043A (https=)
WO (1) WO2005085954A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10603408B2 (en) 2002-10-18 2020-03-31 DePuy Synthes Products, Inc. Biocompatible scaffolds with tissue fragments

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JP4448767B2 (ja) 2004-10-08 2010-04-14 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7947421B2 (en) 2005-01-24 2011-05-24 Fujifilm Corporation Positive resist composition for immersion exposure and pattern-forming method using the same
JP4774302B2 (ja) * 2005-01-24 2011-09-14 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4524207B2 (ja) * 2005-03-02 2010-08-11 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4717640B2 (ja) * 2005-12-12 2011-07-06 東京応化工業株式会社 液浸露光用レジスト組成物およびレジストパターン形成方法
TWI440978B (zh) 2006-02-15 2014-06-11 Sumitomo Chemical Co 化學增幅正型阻劑組合物
JP4912733B2 (ja) * 2006-02-17 2012-04-11 東京応化工業株式会社 液浸露光用レジスト組成物およびレジストパターン形成方法
US8697343B2 (en) 2006-03-31 2014-04-15 Jsr Corporation Fluorine-containing polymer, purification method, and radiation-sensitive resin composition
WO2007119803A1 (ja) * 2006-04-13 2007-10-25 Asahi Glass Company, Limited イマージョンリソグラフィー用レジスト材料
JP2007334278A (ja) * 2006-05-18 2007-12-27 Tokyo Ohka Kogyo Co Ltd 液浸露光用ポジ型レジスト組成物およびレジストパターン形成方法
US7799507B2 (en) 2006-05-18 2010-09-21 Tokyo Ohka Co., Ltd. Positive resist composition for immersion lithography and method for forming resist pattern
JP4832165B2 (ja) * 2006-05-31 2011-12-07 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
CN101495443A (zh) 2006-08-04 2009-07-29 出光兴产株式会社 含金刚烷结构的聚合性化合物、其制备方法和树脂组合物
JP4355011B2 (ja) 2006-11-07 2009-10-28 丸善石油化学株式会社 液浸リソグラフィー用共重合体及び組成物
JP2009004478A (ja) * 2007-06-20 2009-01-08 Toshiba Corp パターン形成方法及び半導体装置の製造方法
JP5292818B2 (ja) * 2008-01-11 2013-09-18 ダイキン工業株式会社 重合性含フッ素単量体および含フッ素重合体ならびにレジストパターン形成方法
JP4703674B2 (ja) * 2008-03-14 2011-06-15 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
TWI518456B (zh) 2008-04-21 2016-01-21 住友化學股份有限公司 化學放大型正阻劑組成物
US8062830B2 (en) 2008-04-21 2011-11-22 Sumitomo Chemical Company, Limited Chemically amplified positive resist composition
KR20110010095A (ko) * 2008-05-19 2011-01-31 제이에스알 가부시끼가이샤 액침 노광용 감방사선성 수지 조성물, 중합체 및 레지스트 패턴 형성 방법
US10241390B2 (en) * 2016-02-24 2019-03-26 AGC Inc. Reflective mask blank and process for producing the reflective mask blank
CN121263453A (zh) * 2023-05-31 2026-01-02 中央硝子株式会社 含氟聚合物、含氟树脂膜形成用组合物、含氟树脂膜、抗蚀图案形成用组合物、抗蚀图案的形成方法、抗蚀上层膜形成用组合物、含氟聚合物的分解方法、含氟聚合性单体、化合物及含氟聚合性单体的制造方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10603408B2 (en) 2002-10-18 2020-03-31 DePuy Synthes Products, Inc. Biocompatible scaffolds with tissue fragments

Also Published As

Publication number Publication date
KR100801046B1 (ko) 2008-02-04
EP1736827A4 (en) 2009-02-25
TWI368824B (https=) 2012-07-21
JP2005284238A (ja) 2005-10-13
KR20060126826A (ko) 2006-12-08
WO2005085954A1 (ja) 2005-09-15
US20070190448A1 (en) 2007-08-16
TW200534043A (en) 2005-10-16
EP1736827A1 (en) 2006-12-27

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