KR100787887B1 - 포지티브 감광성 조성물 - Google Patents

포지티브 감광성 조성물 Download PDF

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Publication number
KR100787887B1
KR100787887B1 KR1020010041877A KR20010041877A KR100787887B1 KR 100787887 B1 KR100787887 B1 KR 100787887B1 KR 1020010041877 A KR1020010041877 A KR 1020010041877A KR 20010041877 A KR20010041877 A KR 20010041877A KR 100787887 B1 KR100787887 B1 KR 100787887B1
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KR
South Korea
Prior art keywords
group
acid
substituted
fluorine atoms
compound
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Application number
KR1020010041877A
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English (en)
Korean (ko)
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KR20020006602A (ko
Inventor
코다마쿠니히코
아오아이토시아키
Original Assignee
후지필름 가부시키가이샤
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Publication of KR20020006602A publication Critical patent/KR20020006602A/ko
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Publication of KR100787887B1 publication Critical patent/KR100787887B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020010041877A 2000-07-13 2001-07-12 포지티브 감광성 조성물 KR100787887B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00212946 2000-07-13
JP2000212946A JP4150491B2 (ja) 2000-07-13 2000-07-13 ポジ型感光性組成物

Publications (2)

Publication Number Publication Date
KR20020006602A KR20020006602A (ko) 2002-01-23
KR100787887B1 true KR100787887B1 (ko) 2007-12-27

Family

ID=18708780

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010041877A KR100787887B1 (ko) 2000-07-13 2001-07-12 포지티브 감광성 조성물

Country Status (3)

Country Link
JP (1) JP4150491B2 (de)
KR (1) KR100787887B1 (de)
TW (1) TWI288858B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521168B2 (en) * 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP4639062B2 (ja) 2003-11-21 2011-02-23 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP4300131B2 (ja) * 2004-02-16 2009-07-22 富士フイルム株式会社 液浸プロセス用化学増幅型レジスト組成物及びそれを用いたパターン形成方法
JP7406983B2 (ja) * 2019-12-26 2023-12-28 住友化学株式会社 組成物および表示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06194842A (ja) * 1992-09-14 1994-07-15 Wako Pure Chem Ind Ltd 微細パターン形成材料及びパターン形成方法
EP0789279A1 (de) * 1996-02-09 1997-08-13 Wako Pure Chemical Industries Ltd Polymer und Resistmaterial
KR20000015770A (ko) * 1998-08-18 2000-03-15 윤종용 백본이 환상 구조를 가지는 감광성 폴리머 및 이를 포함하는 레지스트 조성물

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69027799T2 (de) * 1989-03-14 1997-01-23 Ibm Chemisch amplifizierter Photolack
JPH07140666A (ja) * 1993-06-04 1995-06-02 Internatl Business Mach Corp <Ibm> マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物
US6037107A (en) * 1997-08-28 2000-03-14 Shipley Company, L.L.C. Photoresist compositions
US6037097A (en) * 1998-01-27 2000-03-14 International Business Machines Corporation E-beam application to mask making using new improved KRS resist system
JP3989087B2 (ja) * 1998-05-25 2007-10-10 住友ベークライト株式会社 フォトレジスト用被膜形成材料、フォトレジスト組成物及びパターン形成方法
JP2000047387A (ja) * 1998-07-28 2000-02-18 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
US7704668B1 (en) * 1998-08-04 2010-04-27 Rohm And Haas Electronic Materials Llc Photoresist compositions and methods and articles of manufacture comprising same
JP3876571B2 (ja) * 1998-08-26 2007-01-31 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US6569971B2 (en) * 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
JP3640290B2 (ja) * 1998-10-02 2005-04-20 東京応化工業株式会社 ポジ型ホトレジスト塗布液及びそれを用いた表示素子用基材
JP4007570B2 (ja) * 1998-10-16 2007-11-14 富士フイルム株式会社 ポジ型レジスト組成物
JP4410326B2 (ja) * 1998-10-29 2010-02-03 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06194842A (ja) * 1992-09-14 1994-07-15 Wako Pure Chem Ind Ltd 微細パターン形成材料及びパターン形成方法
EP0789279A1 (de) * 1996-02-09 1997-08-13 Wako Pure Chemical Industries Ltd Polymer und Resistmaterial
KR20000015770A (ko) * 1998-08-18 2000-03-15 윤종용 백본이 환상 구조를 가지는 감광성 폴리머 및 이를 포함하는 레지스트 조성물

Also Published As

Publication number Publication date
JP4150491B2 (ja) 2008-09-17
JP2002023353A (ja) 2002-01-23
KR20020006602A (ko) 2002-01-23
TWI288858B (en) 2007-10-21

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