KR100753066B1 - 자기반도체 기억장치 및 그 제조방법 - Google Patents

자기반도체 기억장치 및 그 제조방법 Download PDF

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Publication number
KR100753066B1
KR100753066B1 KR1020010052504A KR20010052504A KR100753066B1 KR 100753066 B1 KR100753066 B1 KR 100753066B1 KR 1020010052504 A KR1020010052504 A KR 1020010052504A KR 20010052504 A KR20010052504 A KR 20010052504A KR 100753066 B1 KR100753066 B1 KR 100753066B1
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memory cell
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KR20020061096A (ko
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마츠오카히데유키
사카타타케시
와타나베카츠로
이토키요오
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가부시키가이샤 히타치세이사쿠쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements

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  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
KR1020010052504A 2001-01-12 2001-08-29 자기반도체 기억장치 및 그 제조방법 Expired - Fee Related KR100753066B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001004395A JP2002208682A (ja) 2001-01-12 2001-01-12 磁気半導体記憶装置及びその製造方法
JPJP-P-2001-00004395 2001-01-12

Publications (2)

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KR20020061096A KR20020061096A (ko) 2002-07-22
KR100753066B1 true KR100753066B1 (ko) 2007-08-31

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US (1) US6560135B2 (enExample)
JP (1) JP2002208682A (enExample)
KR (1) KR100753066B1 (enExample)
TW (1) TW546822B (enExample)

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US6960479B2 (en) * 2001-07-20 2005-11-01 Intel Corporation Stacked ferroelectric memory device and method of making same
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JP4053825B2 (ja) * 2002-01-22 2008-02-27 株式会社東芝 半導体集積回路装置
JP4450538B2 (ja) * 2002-03-26 2010-04-14 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
GB0207307D0 (en) * 2002-03-27 2002-05-08 Koninkl Philips Electronics Nv In-pixel memory for display devices
AU2003243244A1 (en) 2002-05-16 2003-12-02 Micron Technology, Inc. STACKED 1T-nMEMORY CELL STRUCTURE
US6940748B2 (en) * 2002-05-16 2005-09-06 Micron Technology, Inc. Stacked 1T-nMTJ MRAM structure
US7042749B2 (en) * 2002-05-16 2006-05-09 Micron Technology, Inc. Stacked 1T-nmemory cell structure
KR100448853B1 (ko) * 2002-05-20 2004-09-18 주식회사 하이닉스반도체 마그네틱 램
JP2004119478A (ja) * 2002-09-24 2004-04-15 Renesas Technology Corp 半導体記憶装置、不揮発性記憶装置および磁気記憶装置
US6583003B1 (en) * 2002-09-26 2003-06-24 Sharp Laboratories Of America, Inc. Method of fabricating 1T1R resistive memory array
JP2004128229A (ja) * 2002-10-02 2004-04-22 Nec Corp 磁性メモリ及びその製造方法
JP4664573B2 (ja) 2002-11-28 2011-04-06 ルネサスエレクトロニクス株式会社 磁気半導体記憶装置
JP2004228187A (ja) * 2003-01-21 2004-08-12 Renesas Technology Corp 薄膜磁性体記憶装置
KR100520611B1 (ko) * 2003-03-03 2005-10-10 주식회사 하이닉스반도체 자기저항 램 및 그 제조 방법
KR100615600B1 (ko) * 2004-08-09 2006-08-25 삼성전자주식회사 고집적 자기램 소자 및 그 제조방법
US6952364B2 (en) * 2003-03-03 2005-10-04 Samsung Electronics Co., Ltd. Magnetic tunnel junction structures and methods of fabrication
US6818549B2 (en) * 2003-03-05 2004-11-16 Hewlett-Packard Development Company, L.P. Buried magnetic tunnel-junction memory cell and methods
KR100500450B1 (ko) * 2003-05-13 2005-07-12 삼성전자주식회사 분할된 서브 디지트 라인들을 갖는 자기 램 셀들
KR100615089B1 (ko) * 2004-07-14 2006-08-23 삼성전자주식회사 낮은 구동 전류를 갖는 자기 램
US7369428B2 (en) * 2003-09-29 2008-05-06 Samsung Electronics Co., Ltd. Methods of operating a magnetic random access memory device and related devices and structures
US7372722B2 (en) * 2003-09-29 2008-05-13 Samsung Electronics Co., Ltd. Methods of operating magnetic random access memory devices including heat-generating structures
KR100568512B1 (ko) * 2003-09-29 2006-04-07 삼성전자주식회사 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들
KR100835275B1 (ko) * 2004-08-12 2008-06-05 삼성전자주식회사 스핀 주입 메카니즘을 사용하여 자기램 소자를 구동시키는방법들
JP2005116923A (ja) * 2003-10-10 2005-04-28 Hitachi Ltd スピントルクを用いた不揮発性磁気メモリセルおよびこれを用いた磁気ランダムアクセスメモリ
JP4590862B2 (ja) * 2003-12-15 2010-12-01 ソニー株式会社 磁気メモリ装置及びその製造方法
US7386652B2 (en) * 2004-04-04 2008-06-10 Guobiao Zhang User-configurable pre-recorded memory
KR100660539B1 (ko) * 2004-07-29 2006-12-22 삼성전자주식회사 자기 기억 소자 및 그 형성 방법
DE102004040750B4 (de) * 2004-08-23 2008-03-27 Qimonda Ag Speicherzellenanordnung mit Speicherzellen vom CBRAM-Typ und Verfahren zum Programmieren derselben
US7105903B2 (en) 2004-11-18 2006-09-12 Freescale Semiconductor, Inc. Methods and structures for electrical communication with an overlying electrode for a semiconductor element
US7728384B2 (en) 2006-05-30 2010-06-01 Macronix International Co., Ltd. Magnetic random access memory using single crystal self-aligned diode
US20080099814A1 (en) * 2006-10-30 2008-05-01 Qimonda Ag Integrated circuit and method for production
DE102006051137A1 (de) * 2006-10-30 2008-05-08 Qimonda Ag Anordnung vertikaler Transistoren in einem Substrat und Verfahren zur Herstellung
JP2008218514A (ja) 2007-02-28 2008-09-18 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
JP2013153133A (ja) * 2011-12-27 2013-08-08 Elpida Memory Inc 半導体装置
US9007818B2 (en) 2012-03-22 2015-04-14 Micron Technology, Inc. Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
US9054030B2 (en) 2012-06-19 2015-06-09 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US8923038B2 (en) 2012-06-19 2014-12-30 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9373775B2 (en) 2012-09-13 2016-06-21 Micron Technology, Inc. Methods of forming magnetic memory cells
US9379315B2 (en) 2013-03-12 2016-06-28 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, and memory systems
KR102101407B1 (ko) 2013-03-14 2020-04-16 삼성전자주식회사 자기 저항 메모리 장치 및 그 제조 방법
KR101713871B1 (ko) 2013-03-14 2017-03-09 삼성전자주식회사 자기 저항 메모리 장치 및 그 제조 방법
US9368714B2 (en) 2013-07-01 2016-06-14 Micron Technology, Inc. Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems
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US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en) 2014-04-18 2016-02-23 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
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US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
WO2017090739A1 (ja) * 2015-11-27 2017-06-01 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子および磁気メモリ

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JP4726290B2 (ja) * 2000-10-17 2011-07-20 ルネサスエレクトロニクス株式会社 半導体集積回路
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KR20020046037A (ko) * 2000-12-12 2002-06-20 박종섭 반도체소자의 제조방법

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US20020093845A1 (en) 2002-07-18
TW546822B (en) 2003-08-11
KR20020061096A (ko) 2002-07-22
US6560135B2 (en) 2003-05-06
JP2002208682A (ja) 2002-07-26

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