KR100749683B1 - 회로 내 메모리 어레이 비트 셀 임계 전압 분포 측정 - Google Patents

회로 내 메모리 어레이 비트 셀 임계 전압 분포 측정 Download PDF

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Publication number
KR100749683B1
KR100749683B1 KR1020000068409A KR20000068409A KR100749683B1 KR 100749683 B1 KR100749683 B1 KR 100749683B1 KR 1020000068409 A KR1020000068409 A KR 1020000068409A KR 20000068409 A KR20000068409 A KR 20000068409A KR 100749683 B1 KR100749683 B1 KR 100749683B1
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South Korea
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operating
nonvolatile memory
voltage
test
word line
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Korean (ko)
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KR20010070222A (ko
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에구치리차드카주키
크러딤스키데이빗윌리엄
주토머스
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프리스케일 세미컨덕터, 인크.
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Microcomputers (AREA)
KR1020000068409A 1999-11-17 2000-11-17 회로 내 메모리 어레이 비트 셀 임계 전압 분포 측정 Expired - Fee Related KR100749683B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/441,865 US6226200B1 (en) 1999-11-17 1999-11-17 In-circuit memory array bit cell threshold voltage distribution measurement
US09/441,865 1999-11-17

Publications (2)

Publication Number Publication Date
KR20010070222A KR20010070222A (ko) 2001-07-25
KR100749683B1 true KR100749683B1 (ko) 2007-08-17

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Country Link
US (1) US6226200B1 (enExample)
EP (1) EP1109172A1 (enExample)
JP (1) JP4790110B2 (enExample)
KR (1) KR100749683B1 (enExample)
CN (1) CN1326147C (enExample)

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US7730368B2 (en) * 2003-10-31 2010-06-01 Sandisk Il Ltd. Method, system and computer-readable code for testing of flash memory
US6879518B1 (en) * 2003-11-21 2005-04-12 Atmel Corporation Embedded memory with security row lock protection
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US20080285332A1 (en) * 2005-12-30 2008-11-20 Cheng Zheng Bit-Alterable, Non-Volatile Memory Management
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US7599236B2 (en) * 2006-06-07 2009-10-06 Freescale Semiconductor, Inc. In-circuit Vt distribution bit counter for non-volatile memory devices
US7403438B2 (en) * 2006-07-12 2008-07-22 Infineon Technologies Flash Gmbh & Co. Kg Memory array architecture and method for high-speed distribution measurements
US7483305B2 (en) * 2006-08-28 2009-01-27 Micron Technology, Inc. Method, apparatus and system relating to automatic cell threshold voltage measurement
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JP4921953B2 (ja) * 2006-12-25 2012-04-25 株式会社東芝 半導体集積回路装置及び半導体記憶装置のテスト方法
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US7966550B2 (en) * 2007-03-31 2011-06-21 Sandisk Technologies Inc. Soft bit data transmission for error correction control in non-volatile memory
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US8073648B2 (en) * 2007-05-14 2011-12-06 Sandisk Il Ltd. Measuring threshold voltage distribution in memory using an aggregate characteristic
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US7613045B2 (en) * 2007-11-26 2009-11-03 Sandisk Il, Ltd. Operation sequence and commands for measuring threshold voltage distribution in memory
JP5166894B2 (ja) * 2008-01-30 2013-03-21 セイコーインスツル株式会社 半導体記憶装置
US9159452B2 (en) 2008-11-14 2015-10-13 Micron Technology, Inc. Automatic word line leakage measurement circuitry
US7859932B2 (en) * 2008-12-18 2010-12-28 Sandisk Corporation Data refresh for non-volatile storage
KR101028901B1 (ko) * 2009-02-05 2011-04-12 (주)인디링스 메모리 장치, 메모리 관리 장치 및 메모리 관리 방법
US8095836B2 (en) * 2009-10-29 2012-01-10 Freescale Semiconductor, Inc. Time-based techniques for detecting an imminent read failure in a memory array
US8504884B2 (en) * 2009-10-29 2013-08-06 Freescale Semiconductor, Inc. Threshold voltage techniques for detecting an imminent read failure in a memory array
US8572445B2 (en) 2010-09-21 2013-10-29 Freescale Semiconductor, Inc. Non-volatile memory (NVM) with imminent error prediction
US8310877B2 (en) 2011-01-06 2012-11-13 Freescale Semiconductor, Inc. Read conditions for a non-volatile memory (NVM)
US8427877B2 (en) * 2011-02-11 2013-04-23 Freescale Semiconductor, Inc. Digital method to obtain the I-V curves of NVM bitcells
US8588007B2 (en) 2011-02-28 2013-11-19 Micron Technology, Inc. Leakage measurement systems
US8634264B2 (en) 2011-10-26 2014-01-21 Micron Technology, Inc. Apparatuses, integrated circuits, and methods for measuring leakage current
JP5112566B1 (ja) * 2011-12-16 2013-01-09 株式会社東芝 半導体記憶装置、不揮発性半導体メモリの検査方法、及びプログラム
US8977914B2 (en) * 2012-05-30 2015-03-10 Freescale Semiconductor, Inc. Stress-based techniques for detecting an imminent read failure in a non-volatile memory array
US20140071761A1 (en) * 2012-09-10 2014-03-13 Sandisk Technologies Inc. Non-volatile storage with joint hard bit and soft bit reading
CN103064000B (zh) * 2013-01-05 2015-05-13 北京大学 Mos管阵列的阈值电压分布监测装置及方法
US9076545B2 (en) 2013-01-17 2015-07-07 Sandisk Tecnologies Inc. Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution
US9329932B2 (en) 2014-04-25 2016-05-03 Freescale Semiconductor, Inc. Imminent read failure detection based upon unacceptable wear for NVM cells
US9329921B2 (en) 2014-04-25 2016-05-03 Freescale Semiconductor, Inc. Imminent read failure detection using high/low read voltage levels
US9329933B2 (en) 2014-04-25 2016-05-03 Freescale Semiconductor, Inc. Imminent read failure detection based upon changes in error voltage windows for NVM cells
US9558848B2 (en) 2014-11-04 2017-01-31 Microsoft Technology Licensing, Llc Testing storage device power circuitry
KR102424702B1 (ko) * 2015-11-19 2022-07-25 삼성전자주식회사 불휘발성 메모리 모듈 및 이를 포함하는 전자 장치
US10304550B1 (en) 2017-11-29 2019-05-28 Sandisk Technologies Llc Sense amplifier with negative threshold sensing for non-volatile memory
US10643695B1 (en) 2019-01-10 2020-05-05 Sandisk Technologies Llc Concurrent multi-state program verify for non-volatile memory
US11295209B2 (en) * 2019-12-20 2022-04-05 Micron Technology, Inc. Analysis of memory sub-systems based on threshold distributions
US11024392B1 (en) 2019-12-23 2021-06-01 Sandisk Technologies Llc Sense amplifier for bidirectional sensing of memory cells of a non-volatile memory
US12266414B2 (en) 2022-06-14 2025-04-01 Samsung Electronics Co., Ltd. Memory device and test method of memory device

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Also Published As

Publication number Publication date
JP4790110B2 (ja) 2011-10-12
CN1297231A (zh) 2001-05-30
US6226200B1 (en) 2001-05-01
JP2001202799A (ja) 2001-07-27
KR20010070222A (ko) 2001-07-25
EP1109172A1 (en) 2001-06-20
CN1326147C (zh) 2007-07-11

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St.27 status event code: A-5-5-R10-R11-asn-PN2301