KR100683149B1 - 액정표시소자용 어레이기판의 스트레스 제거방법 - Google Patents
액정표시소자용 어레이기판의 스트레스 제거방법 Download PDFInfo
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- KR100683149B1 KR100683149B1 KR1020030019956A KR20030019956A KR100683149B1 KR 100683149 B1 KR100683149 B1 KR 100683149B1 KR 1020030019956 A KR1020030019956 A KR 1020030019956A KR 20030019956 A KR20030019956 A KR 20030019956A KR 100683149 B1 KR100683149 B1 KR 100683149B1
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- 239000000758 substrate Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 13
- 230000008021 deposition Effects 0.000 claims abstract description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 21
- 238000000151 deposition Methods 0.000 claims description 25
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 4
- 238000002161 passivation Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 6
- 238000005452 bending Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (10)
- 절연기판상에 게이트전극을 형성하는 단계;상기 게이트전극을 포함한 절연기판 상부에 제 1 절연막과 제 2 절연막을 시간에 대해 전극간격 및 압력의 증착조건을 연속적으로 변화시키면서 순차적으로 형성하는 단계;상기 제 2 절연막의 상부에 제 1 비정질실리콘층과 제 2 비정질실리콘층을 순차적으로 형성하여 액티브층을 형성하는 단계;상기 액티브층의 상부에 오믹콘택층과 소오스/드레인전극을 순차적으로 형성하는 단계; 및상기 소오스/드레인전극을 포함한 결과물의 상부에 보호막을 형성하는 단계를 포함하여 구성된 것을 특징으로 하는 액정표시소자용 어레이기판의 스트레스 제거방법.
- 삭제
- 제 1 항에 있어서, 상기 전극간격은 모터의 회전속도를 조절하여 연속적으로 변화시키고, 상기 압력은 펌프의 펌핑스피드를 조절하여 연속적으로 변화시키는 것을 특징으로 하는 액정표시소자용 어레이기판의 스트레스 제거방법.
- 제 1 항에 있어서, 상기 전극간격은 1000mils에서 600mils으로 연속적으로 변화시키고, 상기 압력은 1700Torr에서 1200Torr으로 연속적으로 변화시키는 것을 특징으로 하는 액정표시소자용 어레이기판의 스트레스 제거방법.
- 제 1 항에 있어서, 상기 액티브층의 형성하는 단계의 제 1 및 제 2 비정질 실리콘층을 PECVD방법에 의해 순차적으로 형성하되, 추가적으로 시간에 대하여 전극간격 및 압력의 증착조건을 연속적으로 변화시키면서 순차적으로 형성하는 것을 특징으로 하는 액정표시소자용 어레이 기판의 스트레스 제거 방법
- 제 5 항에 있어서, 상기 전극간격은 모터의 회전속도를 조절하여 연속적으로 변화시키고, 상기 압력은 펌프의 펌핑스피드를 조절하여 연속적으로 변화시키는 것을 특징으로 하는 액정표시소자용 어레이기판의 스트레스 제거방법.
- 제 5 항에 있어서, 상기 전극간격은 1000mils에서 600mils으로 연속적으로 변화시키고, 상기 압력은 1700mTorr에서 1200mTorr으로 연속적으로 변화시키는 것을 특징으로 하는 액정표시소자용 어레이기판의 스트레스 제거방법.
- 제 1 항에 있어서, 상기 보호막을 PECVD 방법에 의해 형성하되, 추가적으로 시간에 대하여 전극간격 및 압력의 증착조건을 연속적으로 변화시키면서 형성하는 것을 특징으로 하는 액정표시소자용 어레이 기판의 스트레스 제거 방법.
- 제 8 항에 있어서, 상기 전극간격은 모터의 회전속도를 조절하여 연속적으로 변화시키고, 상기 압력은 펌프의 펌핑스피드를 조절하여 연속적으로 변화시키는 것을 특징으로 하는 액정표시소자용 어레이기판의 스트레스 제거방법.
- 제 8 항에 있어서, 상기 전극간격은 1000mils에서 600mils으로 연속적으로 변화시키고, 상기 압력은 1700mTorr에서 1200mTorr으로 연속적으로 변화시키는 것을 특징으로 하는 액정표시소자용 어레이기판의 스트레스 제거방법.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030019956A KR100683149B1 (ko) | 2003-03-31 | 2003-03-31 | 액정표시소자용 어레이기판의 스트레스 제거방법 |
US10/722,275 US6841428B2 (en) | 2003-03-31 | 2003-11-25 | Method for fabricating thin film transistor liquid crystal display |
TW092133149A TWI255045B (en) | 2003-03-31 | 2003-11-26 | Method for fabricating thin film transistor liquid crystal display |
JP2003403812A JP4314105B2 (ja) | 2003-03-31 | 2003-12-02 | 薄膜トランジスタ液晶表示装置の製造方法 |
CNB200310123510XA CN100356259C (zh) | 2003-03-31 | 2003-12-24 | 薄膜晶体管液晶显示装置的制造方法 |
Applications Claiming Priority (1)
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KR1020030019956A KR100683149B1 (ko) | 2003-03-31 | 2003-03-31 | 액정표시소자용 어레이기판의 스트레스 제거방법 |
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KR20040085313A KR20040085313A (ko) | 2004-10-08 |
KR100683149B1 true KR100683149B1 (ko) | 2007-02-15 |
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KR1020030019956A KR100683149B1 (ko) | 2003-03-31 | 2003-03-31 | 액정표시소자용 어레이기판의 스트레스 제거방법 |
Country Status (5)
Country | Link |
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US (1) | US6841428B2 (ko) |
JP (1) | JP4314105B2 (ko) |
KR (1) | KR100683149B1 (ko) |
CN (1) | CN100356259C (ko) |
TW (1) | TWI255045B (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI249251B (en) * | 2004-11-22 | 2006-02-11 | Au Optronics Corp | Fabrication method of thin film transistor |
KR100671824B1 (ko) * | 2005-12-14 | 2007-01-19 | 진 장 | 역 스태거드 박막 트랜지스터 제조 방법 |
CN100466266C (zh) * | 2006-04-21 | 2009-03-04 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板及制造方法 |
TWI764143B (zh) | 2006-05-16 | 2022-05-11 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置 |
JP2009099636A (ja) * | 2007-10-15 | 2009-05-07 | Hitachi Displays Ltd | 表示装置および表示装置の製造方法 |
US8110453B2 (en) * | 2008-04-17 | 2012-02-07 | Applied Materials, Inc. | Low temperature thin film transistor process, device property, and device stability improvement |
TWI500159B (zh) * | 2008-07-31 | 2015-09-11 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
CN104795449B (zh) | 2015-04-16 | 2016-04-27 | 京东方科技集团股份有限公司 | 薄膜晶体管及制作方法、阵列基板、显示装置 |
CN107146792B (zh) * | 2017-05-11 | 2019-07-30 | 京东方科技集团股份有限公司 | 一种静电防护装置及其制作方法 |
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JP3288615B2 (ja) * | 1997-10-21 | 2002-06-04 | 株式会社アドバンスト・ディスプレイ | 薄膜トランジスタの製造方法 |
KR100386848B1 (ko) * | 2001-05-09 | 2003-06-09 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 표시소자의 반도체층 재생방법 |
TW541584B (en) * | 2001-06-01 | 2003-07-11 | Semiconductor Energy Lab | Semiconductor film, semiconductor device and method for manufacturing same |
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2003
- 2003-03-31 KR KR1020030019956A patent/KR100683149B1/ko active IP Right Grant
- 2003-11-25 US US10/722,275 patent/US6841428B2/en not_active Expired - Lifetime
- 2003-11-26 TW TW092133149A patent/TWI255045B/zh not_active IP Right Cessation
- 2003-12-02 JP JP2003403812A patent/JP4314105B2/ja not_active Expired - Lifetime
- 2003-12-24 CN CNB200310123510XA patent/CN100356259C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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TWI255045B (en) | 2006-05-11 |
US6841428B2 (en) | 2005-01-11 |
CN1534361A (zh) | 2004-10-06 |
JP2004304156A (ja) | 2004-10-28 |
US20040191969A1 (en) | 2004-09-30 |
KR20040085313A (ko) | 2004-10-08 |
CN100356259C (zh) | 2007-12-19 |
TW200421623A (en) | 2004-10-16 |
JP4314105B2 (ja) | 2009-08-12 |
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