KR100652395B1 - 다이-휨이 억제된 반도체 소자 및 그 제조방법 - Google Patents

다이-휨이 억제된 반도체 소자 및 그 제조방법 Download PDF

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Publication number
KR100652395B1
KR100652395B1 KR1020050002872A KR20050002872A KR100652395B1 KR 100652395 B1 KR100652395 B1 KR 100652395B1 KR 1020050002872 A KR1020050002872 A KR 1020050002872A KR 20050002872 A KR20050002872 A KR 20050002872A KR 100652395 B1 KR100652395 B1 KR 100652395B1
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South Korea
Prior art keywords
stress relaxation
material layer
pattern
semiconductor device
patterns
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Expired - Fee Related
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KR1020050002872A
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English (en)
Korean (ko)
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KR20060082496A (ko
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서형원
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삼성전자주식회사
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Priority to KR1020050002872A priority Critical patent/KR100652395B1/ko
Priority to US11/320,985 priority patent/US7781851B2/en
Priority to JP2006004185A priority patent/JP2006196899A/ja
Publication of KR20060082496A publication Critical patent/KR20060082496A/ko
Application granted granted Critical
Publication of KR100652395B1 publication Critical patent/KR100652395B1/ko
Priority to US12/839,573 priority patent/US20100285654A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J27/00—Cooking-vessels
    • A47J27/002—Construction of cooking-vessels; Methods or processes of manufacturing specially adapted for cooking-vessels
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J36/00—Parts, details or accessories of cooking-vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S220/00—Receptacles
    • Y10S220/912—Cookware, i.e. pots and pans

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Food Science & Technology (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
KR1020050002872A 2005-01-12 2005-01-12 다이-휨이 억제된 반도체 소자 및 그 제조방법 Expired - Fee Related KR100652395B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050002872A KR100652395B1 (ko) 2005-01-12 2005-01-12 다이-휨이 억제된 반도체 소자 및 그 제조방법
US11/320,985 US7781851B2 (en) 2005-01-12 2005-12-30 Semiconductor device having reduced die-warpage and method of manufacturing the same
JP2006004185A JP2006196899A (ja) 2005-01-12 2006-01-11 ダイの反りが抑制された半導体素子及びその製造方法
US12/839,573 US20100285654A1 (en) 2005-01-12 2010-07-20 Semiconductor device having reduced die-warpage and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050002872A KR100652395B1 (ko) 2005-01-12 2005-01-12 다이-휨이 억제된 반도체 소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20060082496A KR20060082496A (ko) 2006-07-19
KR100652395B1 true KR100652395B1 (ko) 2006-12-01

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Family Applications (1)

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KR1020050002872A Expired - Fee Related KR100652395B1 (ko) 2005-01-12 2005-01-12 다이-휨이 억제된 반도체 소자 및 그 제조방법

Country Status (3)

Country Link
US (2) US7781851B2 (enExample)
JP (1) JP2006196899A (enExample)
KR (1) KR100652395B1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008044984A1 (de) * 2008-08-29 2010-07-15 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement mit Verspannungsrelaxationsspalte zur Verbesserung der Chipgehäusewechselwirkungsstabilität
WO2012140810A1 (ja) 2011-04-13 2012-10-18 パナソニック株式会社 チップ接合部分の冗長救済構造を有する三次元集積回路
KR102059823B1 (ko) * 2013-06-11 2019-12-27 삼성전기주식회사 기판 제조 방법 및 빌드-업 기판 적층체
KR102065648B1 (ko) * 2013-08-14 2020-01-13 삼성전자주식회사 반도체 패키지
US9397051B2 (en) 2013-12-03 2016-07-19 Invensas Corporation Warpage reduction in structures with electrical circuitry
CN103779245B (zh) * 2014-01-28 2016-09-28 苏州晶方半导体科技股份有限公司 芯片封装方法及封装结构
US9905515B2 (en) * 2014-08-08 2018-02-27 Mediatek Inc. Integrated circuit stress releasing structure
US9847287B2 (en) * 2015-06-17 2017-12-19 Semiconductor Components Industries, Llc Passive tunable integrated circuit (PTIC) and related methods
US20170062240A1 (en) * 2015-08-25 2017-03-02 Inotera Memories, Inc. Method for manufacturing a wafer level package
CN107039235A (zh) * 2016-02-03 2017-08-11 奕力科技股份有限公司 具低翘曲度的驱动晶片及其制造方法
KR102484394B1 (ko) 2017-12-06 2023-01-03 삼성전자주식회사 반도체 장치
CN113518503B (zh) * 2021-03-31 2022-08-09 深圳市景旺电子股份有限公司 多层印刷线路板及其制作方法
US20230187850A1 (en) * 2021-12-13 2023-06-15 Intel Corporation Liquid metal connection device and method
CN116913868A (zh) * 2023-09-11 2023-10-20 深圳市威兆半导体股份有限公司 半导体器件及其制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162042A (ja) 1982-03-23 1983-09-26 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
JPH01291430A (ja) * 1988-05-18 1989-11-24 Fujitsu Ltd 半導体装置の製造方法
JPH05343276A (ja) * 1992-06-09 1993-12-24 Mitsubishi Materials Corp 半導体ウェーハの製造方法
JPH06314664A (ja) * 1993-04-28 1994-11-08 Mitsubishi Electric Corp 半導体装置のメッキ方法
JP2001093863A (ja) 1999-09-24 2001-04-06 Toshiba Corp ウェーハ裏面スパッタリング方法及び半導体製造装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4918511A (en) * 1985-02-01 1990-04-17 Advanced Micro Devices, Inc. Thermal expansion compensated metal lead frame for integrated circuit package
US4654269A (en) * 1985-06-21 1987-03-31 Fairchild Camera & Instrument Corp. Stress relieved intermediate insulating layer for multilayer metalization
JP3229491B2 (ja) * 1993-10-05 2001-11-19 株式会社小糸製作所 自動車用ヘッドランプにおけるエイミング用水準器
US5438022A (en) * 1993-12-14 1995-08-01 At&T Global Information Solutions Company Method for using low dielectric constant material in integrated circuit fabrication
US5413962A (en) * 1994-07-15 1995-05-09 United Microelectronics Corporation Multi-level conductor process in VLSI fabrication utilizing an air bridge
KR0182073B1 (ko) * 1995-12-22 1999-03-20 황인길 반도체 칩 스케일 반도체 패키지 및 그 제조방법
US6184121B1 (en) * 1997-07-10 2001-02-06 International Business Machines Corporation Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same
JPH1167755A (ja) * 1997-08-21 1999-03-09 Seiko Epson Corp 半導体の構造
US6016000A (en) * 1998-04-22 2000-01-18 Cvc, Inc. Ultra high-speed chip semiconductor integrated circuit interconnect structure and fabrication method using free-space dielectrics
JPH11307525A (ja) 1998-04-22 1999-11-05 Toshiba Corp 半導体装置及びその製造方法
US6211057B1 (en) * 1999-09-03 2001-04-03 Taiwan Semiconductor Manufacturing Company Method for manufacturing arch air gap in multilevel interconnection
US6710446B2 (en) * 1999-12-30 2004-03-23 Renesas Technology Corporation Semiconductor device comprising stress relaxation layers and method for manufacturing the same
US6570245B1 (en) * 2000-03-09 2003-05-27 Intel Corporation Stress shield for microelectronic dice
KR20020021123A (ko) * 2000-04-12 2002-03-18 롤페스 요하네스 게라투스 알베르투스 반도체 디바이스 및 이의 제조 방법
KR20010105641A (ko) 2000-05-17 2001-11-29 윤종용 웨이퍼 레벨 칩 스케일 패키지 및 그 제조방법
US6979595B1 (en) * 2000-08-24 2005-12-27 Micron Technology, Inc. Packaged microelectronic devices with pressure release elements and methods for manufacturing and using such packaged microelectronic devices
KR100410990B1 (ko) * 2001-02-20 2003-12-18 삼성전자주식회사 다층배선을 갖는 반도체 장치 및 그의 제조방법
US6455924B1 (en) * 2001-03-22 2002-09-24 International Business Machines Corporation Stress-relieving heatsink structure and method of attachment to an electronic package
US6875682B1 (en) * 2001-09-04 2005-04-05 Taiwan Semiconductor Manufacturing Company Mesh pad structure to eliminate IMD crack on pad
TW504824B (en) * 2001-11-21 2002-10-01 Siliconware Precision Industries Co Ltd Semiconductor package having chip cracking prevention member
JP3882648B2 (ja) 2002-03-14 2007-02-21 富士電機デバイステクノロジー株式会社 半導体装置およびその製造方法
FR2857502B1 (fr) * 2003-07-10 2006-02-24 Soitec Silicon On Insulator Substrats pour systemes contraints
TWI256095B (en) * 2004-03-11 2006-06-01 Siliconware Precision Industries Co Ltd Wafer level semiconductor package with build-up layer and process for fabricating the same
US9929080B2 (en) * 2004-11-15 2018-03-27 Intel Corporation Forming a stress compensation layer and structures formed thereby

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162042A (ja) 1982-03-23 1983-09-26 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
JPH01291430A (ja) * 1988-05-18 1989-11-24 Fujitsu Ltd 半導体装置の製造方法
JPH05343276A (ja) * 1992-06-09 1993-12-24 Mitsubishi Materials Corp 半導体ウェーハの製造方法
JPH06314664A (ja) * 1993-04-28 1994-11-08 Mitsubishi Electric Corp 半導体装置のメッキ方法
JP2001093863A (ja) 1999-09-24 2001-04-06 Toshiba Corp ウェーハ裏面スパッタリング方法及び半導体製造装置

Also Published As

Publication number Publication date
US20100285654A1 (en) 2010-11-11
JP2006196899A (ja) 2006-07-27
US7781851B2 (en) 2010-08-24
KR20060082496A (ko) 2006-07-19
US20060163689A1 (en) 2006-07-27

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